公开(公告)号：US5359066A

公开(公告)日：1994-10-25

申请号：US938249

申请日：1993-06-15

申请人： Hideo Tsutsumi ,  Takeshi Terasawa ,  David Barrett ,  Masayoshi Murata ,  Kazuo Sakane ,  Akira Yazaki ,  Satoshi Inoue

发明人： Hideo Tsutsumi ,  Takeshi Terasawa ,  David Barrett ,  Masayoshi Murata ,  Kazuo Sakane ,  Akira Yazaki ,  Satoshi Inoue

IPC分类号： C07D471/06 ,  C07D519/00 ,  A61K31/50 ,  C07D487/06

CPC分类号： C07D471/06 ,  Y02P20/55

摘要： A compound represented by the following general formula: ##STR1## which is useful as an intermediate for production of a clinically excellent synthetic antibacterial, a salt thereof, and a process for producing the same.In said formula,R.sup.1 is a hydrogen atom or a carboxyl-protecting group;R.sup.2 is a hydrogen atom or a lower alkyl group;X.sup.1 is a hydrogen atom or a halogen atom;X.sup.2 is a halogen atom;X.sub.a.sup.5 is a hydrogen atom or a halogen atom;A is a methylene group; a group of >CH--COOR.sup.4, etc.,in which R.sup.4, R.sup.5 and R.sup.6 each are a hydrogen atom or a carboxyl-protecting group;B is a methylene group or a carbonyl group;provided that both A and B must not be methylene groups at the same time.

摘要翻译： PCT No.PCT / JP92 / 00215 Sec。 371日期：1993年6月15日 102（e）日期1993年6月15日PCT提交1992年2月27日PCT公布。 第WO92 / 15584号公报 日期：1992年9月17日，由以下通式表示的化合物：作为制备临床上优异的合成抗菌剂的中间体及其制备方法可以使用的化合物（A）。 在所述式中，R 1为氢原子或羧基保护基; R2是氢原子或低级烷基; X1是氢原子或卤素原子; X2是卤原子; Xa5是氢原子或卤素原子; A是亚甲基; 一组> CH-COOR4等，其中R4，R5和R6各自为氢原子或羧基保护基; B是亚甲基或羰基; 条件是A和B不能同时为亚甲基。

公开(公告)号：US5254685A

公开(公告)日：1993-10-19

申请号：US741333

申请日：1991-08-07

申请人： Masaharu Yokomoto ,  Akira Yazaki ,  Norihiro Hayashi ,  Shunso Hatono ,  Satoshi Inoue ,  Yasuhiro Kuramoto

发明人： Masaharu Yokomoto ,  Akira Yazaki ,  Norihiro Hayashi ,  Shunso Hatono ,  Satoshi Inoue ,  Yasuhiro Kuramoto

IPC分类号： C07D471/06 ,  C07D519/00 ,  A61K31/435 ,  A61K31/50 ,  A61K31/55

CPC分类号： C07D471/06

摘要： A tricyclic compound represented by the general formula (1) and salts thereof. ##STR1## A method for producing the tricyclic compound and salts thereof, and an antimicrobial agent containing the tricyclic compound and salts thereof as an active ingredient are also disclosed.

公开(公告)号：US5399553A

公开(公告)日：1995-03-21

申请号：US076938

申请日：1993-06-16

申请人： Masaharu Yokomoto ,  Akira Yazaki ,  Norihiro Hayashi ,  Shunso Hatono ,  Satoshi Inoue ,  Yasuhiro Kuramoto

发明人： Masaharu Yokomoto ,  Akira Yazaki ,  Norihiro Hayashi ,  Shunso Hatono ,  Satoshi Inoue ,  Yasuhiro Kuramoto

IPC分类号： C07D471/06 ,  C07D519/00 ,  A61K37/02 ,  A61K31/50 ,  A61K31/55

CPC分类号： C07D471/06

摘要： A tricyclic compound represented by the general formula (1) and salts thereof are disclosed. ##STR1## A method for producing the tricyclic compound and salts thereof, and an antimicrobial agent containing the tricyclic compound and salts thereof as an active ingredient are also disclosed.

摘要翻译： 公开了由通式（1）表示的三环化合物及其盐。 （1）还公开了一种制备三环化合物及其盐的方法，以及含有三环化合物及其盐作为活性成分的抗微生物剂。

公开(公告)号：US5026856A

公开(公告)日：1991-06-25

申请号：US356059

申请日：1989-05-23

申请人： Takashi Yatsunami ,  Akira Yazaki ,  Satoshi Inoue ,  Hitoshi Yamamoto ,  Masaharu Yokomoto ,  Jun Nomiyama ,  Shuichiro Noda

发明人： Takashi Yatsunami ,  Akira Yazaki ,  Satoshi Inoue ,  Hitoshi Yamamoto ,  Masaharu Yokomoto ,  Jun Nomiyama ,  Shuichiro Noda

IPC分类号： A23L3/3544 ,  A01N43/90 ,  A61K31/47 ,  A61K31/535 ,  A61P31/04 ,  C07D401/04 ,  C07D471/04 ,  C07D498/06

CPC分类号： C07D401/04 ,  C07D471/04 ,  Y02P20/55

摘要： Isoindoline derivatives represented by the formula (I) and their salts are disclosed. ##STR1## There are many varieties for the compound depending on the types of residues R.sup.1 -R.sup.9 and X. The compounds can be prepared from quinoline derivatives of the formula (II) and an isoindoline derivatives of the formula (III). The compounds of formula (I) and their salts have excellent antibacterial activities against both gram positive and gram negative microorganisms. They can be used as a medicine, an agrichemical, and a food preservative.

公开(公告)号：US5153203A

公开(公告)日：1992-10-06

申请号：US501720

申请日：1990-03-30

申请人： Takashi Yatsunami ,  Hitodshi Yamamoto ,  Yasuhiro Kuramoto ,  Norihiro Hayashi ,  Akira Yazaki ,  Satoshi Inoue ,  Shuichiro Noda ,  Hirotaka Amano

发明人： Takashi Yatsunami ,  Hitodshi Yamamoto ,  Yasuhiro Kuramoto ,  Norihiro Hayashi ,  Akira Yazaki ,  Satoshi Inoue ,  Shuichiro Noda ,  Hirotaka Amano

IPC分类号： C07D401/12 ,  C07D413/04 ,  C07D417/12 ,  C07D453/02 ,  C07D471/04 ,  C07D498/06

CPC分类号： C07D401/12 ,  C07D413/04 ,  C07D417/12 ,  C07D453/02 ,  C07D471/04 ,  Y02P20/55

摘要： Antibacterial quinolone derivatives represented by the following formula and salts thereof are disclosed. ##STR1## wherein R.sup.1 meawns a substituted or unsubstituted lower alkyl group, a substituted or unsubstituted cycloalkyl group, a substituted or unsubstituted lower alkenyl group or a substituted or unsubstituted phenyl group, R.sup.2 denotes a hydrogen atom or a carboxyl-protecting group, R.sup.3 represents a hydrogen or halogen atom or an amino, mono- or di-(lower alkyl)amino, hydroxyl or lower alkoxyl group, X is a hydrogen or halogen atom, Y means a nitrogen atom or a group C-R.sup.4 in which R.sup.4 is a hydrogen or halogen atom or a lower alkyl or lower alkoxyl group or is a group ##STR2## which forms a ring together with R.sup.1 (i.e., the asterisked carbon atoms are linked to the N(1) atom of the quinolone skeleton), and A denotes a specific N-containing group. Preparation processes of the quinolone derivatives and antibacterial agents containing the same are also disclosed.

公开(公告)号：US09580791B2

公开(公告)日：2017-02-28

申请号：US13697164

申请日：2011-04-26

申请人： Satoshi Inoue ,  Shinichi Kawato ,  Nobuhiro Hayashi ,  Tohru Sonoda

发明人： Satoshi Inoue ,  Shinichi Kawato ,  Nobuhiro Hayashi ,  Tohru Sonoda

IPC分类号： C23C16/04 ,  H05B33/10 ,  C23C14/04 ,  B05C21/00 ,  H01L51/00 ,  H01L51/50

CPC分类号： C23C14/042 ,  B05C21/005 ,  H01L51/0011 ,  H01L51/50

摘要： A vapor deposition mask (70) includes a first layer (71), a second layer (72) and a third layer (73) in this order. A plurality of first openings (71h), a plurality of second openings (72h) and a plurality of third openings (73h) are formed respectively in the first layer, the second layer and the third layer. The first openings, the second openings and the third openings communicate with each other, thereby constituting mask openings (75). The opening dimension of the second openings is larger than the opening dimension of the first openings and is larger than the opening dimension of the third openings. With this configuration, it is possible to prevent reduction of the opening dimension of the mask openings or clogging of the mask openings due to the vapor deposition particles adhering to the mask openings.

摘要翻译： 蒸镀掩模（70）依次包括第一层（71），第二层（72）和第三层（73）。 多个第一开口（71h），多个第二开口（72h）和多个第三开口（73h）分别形成在第一层，第二层和第三层中。 第一开口，第二开口和第三开口彼此连通，从而构成掩模开口（75）。 第二开口的开口尺寸大于第一开口的开口尺寸，并且大于第三开口的开口尺寸。 利用这种构造，可以防止由于气相沉积颗粒粘附到掩模开口而导致的掩模开口的开口尺寸的减小或掩模开口的堵塞。

公开(公告)号：US09391275B2

公开(公告)日：2016-07-12

申请号：US13703873

申请日：2011-08-17

申请人： Tohru Sonoda ,  Nobuhiro Hayashi ,  Shinichi Kawato ,  Satoshi Inoue

发明人： Tohru Sonoda ,  Nobuhiro Hayashi ,  Shinichi Kawato ,  Satoshi Inoue

IPC分类号： C23C16/00 ,  H01L51/00 ,  C23C14/04 ,  H01L27/32 ,  H01L51/56

CPC分类号： H01L51/0008 ,  C23C14/042 ,  H01L27/3211 ,  H01L27/3244 ,  H01L51/0011 ,  H01L51/56

摘要： A vapor deposition source (60), a plurality of control plates (80) and a vapor deposition mask (70) are disposed in this order. A substrate (10) is moved relative to the vapor deposition mask in a state in which the substrate and the vapor deposition mask are spaced apart at a fixed interval. Vapor deposition particles (91) discharged from a vapor deposition source opening (61) of the vapor deposition source pass through neighboring inter-control plate spaces (81) and mask openings (71) formed in the vapor deposition mask, and then adhere to the substrate to form a coating film (90). At least a part of the coating film is formed by the vapor deposition particles that have passed through two or more different inter-control plate spaces. It is thereby possible to form a coating film in which edge blur and variations in the thickness are suppressed.

摘要翻译： 蒸镀源（60），多个控制板（80）和蒸镀掩模（70）依次配置。 在基板和气相沉积掩模以固定间隔间隔开的状态下，基板（10）相对于气相沉积掩模移动。 从气相沉积源的气相沉积源开口（61）排出的气相沉积颗粒（91）通过相邻的控制板间隙（81）和形成在气相沉积掩模中的掩模开口（71），然后粘附到 基板以形成涂膜（90）。 涂膜的至少一部分由已经通过两个或更多个不同的控制间隙的气相沉积颗粒形成。 由此，可以形成抑制边缘模糊和厚度变化的涂膜。

公开(公告)号：US08845808B2

公开(公告)日：2014-09-30

申请号：US13997173

申请日：2011-12-19

申请人： Tohru Sonoda ,  Shinichi Kawato ,  Satoshi Inoue ,  Satoshi Hashimoto

发明人： Tohru Sonoda ,  Shinichi Kawato ,  Satoshi Inoue ,  Satoshi Hashimoto

IPC分类号： C23C14/26 ,  C23C16/448 ,  H05B33/10 ,  C23C14/24 ,  H01L21/02 ,  H01L51/00 ,  H01L51/56

CPC分类号： C23C16/45578 ,  C23C14/24 ,  C23C14/243 ,  H01L21/02263 ,  H01L51/001 ,  H01L51/56 ,  H05B33/10

摘要： A vapor deposition device (50) in accordance with the present invention is a vapor deposition device for forming a film on a film formation substrate (60), the vapor deposition device including a vapor deposition source (80) that has an injection hole (81) from which vapor deposition particles are injected, a vapor deposition particle crucible (82) for supplying the vapor deposition particles to the vapor deposition source (80), and a rotation motor (86) for changing a distribution of the injection amount of the vapor deposition particles by rotating the vapor deposition source (80).

摘要翻译： 根据本发明的蒸镀装置（50）是在成膜基板（60）上形成膜的蒸镀装置，其特征在于，所述蒸镀装置具有：蒸镀源（80），具有喷射孔 ），用于将气相沉积粒子供给到气相沉积源（80）的气相沉积粒子坩埚（82）和用于改变蒸汽喷射量分布的旋转马达（86） 通过旋转气相沉积源（80）来沉积颗粒。

公开(公告)号：US08673082B2

公开(公告)日：2014-03-18

申请号：US13980875

申请日：2012-01-13

申请人： Satoshi Inoue ,  Shinichi Kawato ,  Tohru Sonoda

发明人： Satoshi Inoue ,  Shinichi Kawato ,  Tohru Sonoda

IPC分类号： C23C16/00

CPC分类号： C23C16/448 ,  C23C14/243 ,  C23C16/042 ,  G03B37/06 ,  H01L51/0008

摘要： A crucible (50) of the present invention includes: an opening (55a) from which vapor deposition particles are injected toward a film formation substrate on which a film is to be formed; a focal point member (54a), provided so as to face the opening (55a), which reflects vapor deposition particles injected from the opening (55a); and a revolution paraboloid (55b) which reflects, toward the film formation substrate, vapor deposition particles which have been reflected by the focal point member (54a).

摘要翻译： 本发明的坩埚（50）包括：朝向要在其上形成膜的成膜基板上注入蒸镀颗粒的开口（55a） 设置成面对开口（55a）的焦点部件（54a），其反射从开口（55a）喷射的气相沉积粒子; 以及向所述成膜基板反射已被所述焦点部件（54a）反射的气相沉积粒子的旋转抛物面（55b）。

公开(公告)号：US20140014036A1

公开(公告)日：2014-01-16

申请号：US14007956

申请日：2012-03-23

申请人： Tohru Sonoda ,  Shinichi Kawato ,  Satoshi Inoue ,  Satoshi Hashimoto

发明人： Tohru Sonoda ,  Shinichi Kawato ,  Satoshi Inoue ,  Satoshi Hashimoto

IPC分类号： H01L21/02 ,  B65D85/00

摘要： A vapor deposition particle emitting device of the present invention includes: a nozzle section (110) having emission holes (111) from which gaseous vapor deposition particles are emitted out; a heating plate unit (100), provided in the nozzle section (110), which is made up of heating plates (101) each having a surface on which a vapor deposition material remains as a result of adherence of vapor deposition particles to the surface; and a heating device (160) for heating the vapor deposition material, which is thus remaining on the surface of each of the heating plates (101), so that a temperature of the vapor deposition material is not less than a temperature at which to become transformed into gaseous form.

摘要翻译： 本发明的气相沉积粒子发射装置包括：喷嘴部分（110），其具有从其中排出气态气相沉积颗粒的发射孔（111）; 设置在所述喷嘴部分（110）中的加热板单元（100），所述加热板单元由加热板（101）组成，所述加热板具有由于气相沉积颗粒粘附到所述表面而具有气相沉积材料的表面的表面 ; 以及用于加热蒸镀材料的加热装置（160），其被保持在每个加热板（101）的表面上，使得蒸镀材料的温度不低于成为 转化成气态。