-
公开(公告)号：US5549780A
公开(公告)日：1996-08-27
申请号：US35921
申请日：1993-03-22
申请人： Hideomi Koinuma , Tadashi Shiraishi , Tohru Inoue , Kiyoto Inomata , Shigenori Hayashi , Akiharu Miyanaga , Shunpei Yamazaki
发明人： Hideomi Koinuma , Tadashi Shiraishi , Tohru Inoue , Kiyoto Inomata , Shigenori Hayashi , Akiharu Miyanaga , Shunpei Yamazaki
CPC分类号： H01J37/32009 , B29C47/0009 , B29C59/14 , H01J37/32532 , H05H1/46 , B29K2079/08
摘要： An apparatus for generating plasma of helium mainly-contained gas added with halogen element using high-frequency energy which is applied between concentrically-arranged electrodes to conduct an etching treatment on a substrate with the thus-generated plasma, is equipped with a grounded electrode on the surface of the substrate, the grounded electrode serving to prevent electrification or charging of the substrate. A cylindrical insulator is provided between the electrodes so as to be contacted with the outside electrode, and a voltage applied between the central electrode and the cylindrical insulator is heightened by reducing the thickness of the cylindrical insulator or increasing the dielectric constant of the cylindrical insulator, so that low-temperature plasma is generated under atmospheric pressure using argon mainly-contained gas in a reaction space. Further, in a plasma generating apparatus for generating plasma with a pair of parallel electrodes, an insulator having high dielectric constant is provided in close contact with one of the electrodes, and gas mainly containing rare gas such as helium, argon or the like is supplied into the discharge space between the pair of parallel electrodes while the flow amount of the gas is controlled by a flow-amount controller, thereby inducing the gas to plasma under atmospheric pressure, and generating a sheet-shaped plasma.
摘要翻译： 使用施加在同心布置的电极之间的高频能量的添加有卤素元素的氦气主要含有气体的等离子体等离子体的设备，用这样产生的等离子体对衬底进行蚀刻处理，配备有接地电极 衬底的表面，接地电极用于防止衬底的起电或充电。 在电极之间设置圆柱形绝缘体以与外部电极接触，并且通过减小圆柱形绝缘体的厚度或提高圆柱形绝缘体的介电常数来提高施加在中心电极和圆柱形绝缘体之间的电压， 使得在大气压下使用氩气主要含有的气体在反应空间中产生低温等离子体。 此外，在用一对平行电极产生等离子体的等离子体生成装置中，提供具有高介电常数的绝缘体，与其中一个电极紧密接触，并且主要包含诸如氦，氩等的稀有气体的气体被供应 进入一对平行电极之间的放电空间，同时通过流量控制器控制气体的流量，从而在大气压下使气体进入等离子体，并产生片状等离子体。
-
公开(公告)号：US5198724A
公开(公告)日：1993-03-30
申请号：US777708
申请日：1991-10-21
IPC分类号： C23F4/00 , B29C47/12 , B29C59/14 , H01J37/305 , H01J37/32 , H01L21/302 , H01L21/3065 , H05H1/26 , H05H1/46
CPC分类号： H01J37/32009 , B29C47/12 , B29C59/14 , H01J37/32532 , H05H1/46 , B29C47/0021 , B29K2079/08
摘要： A plasma generating device includes a central conductor, a peripheral cylindrical conductor surrounding the central conductor, an insulating cylinder interposed between the central conductor and the peripheral conductor in order to prevent direct arc discharge from occurring between the central conductor and the peripheral conductor. The central and peripheral conductors and the insulating cylinder are coaxially arranged in order to define a cylindrical discharging space therein. By applying a high frequency energy to the central conductor, glow discharge is caused between the central and peripheral conductors. A reactive gas is introduced from one end of the discharging space, excited by the glow discharge and goes out from the other end as an excited plasma to a working place where a work piece is processed by the plasma.
摘要翻译： 等离子体产生装置包括中心导体，围绕中心导体的外围圆柱形导体，插入在中心导体和外围导体之间的绝缘圆筒，以便防止在中心导体和外围导体之间发生直接电弧放电。 中心和周边导体和绝缘筒同轴地布置以便在其中限定圆柱形放电空间。 通过向中心导体施加高频能量，在中心导体和外围导体之间产生辉光放电。 从放电空间的一端引入反应性气体，由辉光放电激发，并作为激发的等离子体从另一端排出到等离子体处理工件的工作场所。
-
公开(公告)号：US5369336A
公开(公告)日：1994-11-29
申请号：US9992
申请日：1993-01-27
IPC分类号： C23F4/00 , B29C59/14 , H01J37/32 , H01L21/302 , H01L21/3065 , H05H1/46 , H01J7/24
CPC分类号： H01J37/32009 , B29C59/14 , H01J37/32082 , H01J37/32532 , H01J37/3266 , H01J37/32825 , H01L21/3065 , B29K2079/08 , H01J2237/334
摘要： A plasma generating device and a method for etching a minute region of a substrate under atmospheric pressure are disclosed. A gas containing helium as the main ingredient is glow discharged under atmospheric pressure, a halide is added to the discharge so as to activate the halogen element, and a solid material (substrate) such as silicon is chemically etched by using the radioals. At that time, a magnetic field acts on the discharge so as to draw out electrons and ions to the surface of the substrate, thereby increasing the radical density in the vicinity of the surface of the substrate and the etching rate.
摘要翻译： 公开了等离子体产生装置和在大气压下蚀刻基板的微小区域的方法。 含有氦气作为主要成分的气体在大气压下辉光放电，向放电物中加入卤化物以活化卤素元素，通过使用放射性物质化学蚀刻诸如硅的固体材料（衬底）。 此时，磁场作用于放电，以将电子和离子引出到衬底的表面，从而增加衬底表面附近的自由基密度和蚀刻速率。
-
公开(公告)号：US5221427A
公开(公告)日：1993-06-22
申请号：US813758
申请日：1991-12-30
IPC分类号： C23F4/00 , B29C59/14 , H01J37/32 , H01L21/302 , H01L21/3065 , H05H1/46
CPC分类号： H01J37/32009 , B29C59/14 , H01J37/32082 , H01J37/32532 , H01J37/3266 , H01J37/32825 , H01L21/3065 , B29K2079/08 , H01J2237/334
摘要： A plasma generating device and a method for etching a minute region of a substrate under atmospheric pressure are disclosed. A gas containing helium as the main ingredient is glow discharged under atmospheric pressure, a halide is added to the discharge so as to activate the halogen element, and a solid material (substrate) such as silicon is chemically etched by using the radicals. At that time, a magnetic field acts on the discharge so as to draw out electrons and ions to the surface of the substrate, thereby increasing the radical density in the vicinity of the surface of the substrate and the etching rate.
摘要翻译： 公开了等离子体产生装置和在大气压下蚀刻基板的微小区域的方法。 含有氦气作为主要成分的气体在大气压下辉光放电，向放电物中加入卤化物以活化卤素元素，并通过使用自由基化学蚀刻诸如硅的固体材料（衬底）。 此时，磁场作用于放电，以将电子和离子引出到衬底的表面，从而增加衬底表面附近的自由基密度和蚀刻速率。
-
5.发明授权Method for manufacturing in-plane lattice constant adjusting substrate and in-plane lattice constant adjusting substrate 失效制造面内晶格常数调整基板和面内晶格常数调整基板的方法公开(公告)号：US07150788B2
公开(公告)日：2006-12-19
申请号：US10486571
申请日：2002-08-21
IPC分类号： C30B29/16
CPC分类号： C30B25/18 , C30B23/025 , C30B29/32 , C30B33/02
摘要： A method of adjusting the in-plane lattice constant of a substrate and an in-plane lattice constant adjusted substrate are provided. A crystalline substrate (1) made of SrTiO3 is formed at a first preestablished temperature thereon with a first epitaxial thin film (2) made of a first material, e. g., BaTiO3, and then on the first epitaxial thin film (2) with a second epitaxial thin film (6) made of a second material, e. g., BaxSr1−xTiO3 (where 0
摘要翻译： 提供了调整衬底和面内晶格常数调整衬底的面内晶格常数的方法。 在第一预先制备的温度下，用由第一材料制成的第一外延薄膜（2）形成由SrTiO 3 3制成的晶体衬底（1） 然后在由第二材料制成的第二外延薄膜（6）上的第一外延薄膜（2）上，例如BaTiO 3 3， 例如，含有第一材料的物质和与其一起形成的另一物质的BaxSr 1-x N 2 O 3（其中0
-
公开(公告)号：US20060057240A1
公开(公告)日：2006-03-16
申请号：US10528265
申请日：2003-09-19
IPC分类号： A01J21/00
CPC分类号： C23C14/044
摘要： It comprises a mask (11) having a first, a second and a third action edge (11a, 11b, 11c), and a drive means for moving the mask (11) relative to a substrate (12) in a uniaxial direction (A) whereby moving the mask at a fixed rate of movement to cause the edges to successively act on an identical substrate region while successively applying different materials thereto forms thin films of three components successively with respective film thickness gradients oriented in three different directions mutually angularly spaced apart by an angle of 120° to allow these films to overlap, thereby forming a ternary phase diagrammatic thin film 13.
摘要翻译： 它包括具有第一，第二和第三作用边缘（11a，11b，11c）的掩模（11）和用于以单轴方式相对于基板（12）移动掩模（11）的驱动装置 方向（A），其中以固定的移动速度移动掩模以使得边缘连续地作用在相同的基底区域上，同时连续施加不同的材料，依次形成三个分量的薄膜，相应的膜厚梯度相互取向在三个不同的方向 以120°的角度间隔开，以使这些膜重叠，从而形成三元相图薄膜13。
-
公开(公告)号：US06617539B1
公开(公告)日：2003-09-09
申请号：US09786460
申请日：2001-03-05
申请人： Hideomi Koinuma , Masashi Kawasaki
发明人： Hideomi Koinuma , Masashi Kawasaki
IPC分类号： B23K2600
CPC分类号： C23C14/541
摘要： A laser heating apparatus (20) for heating a thin film forming substrate (1) in a thin film manufacturing process is disclosed. The substrate (1) set in position in a vacuum chamber (101) of a film forming apparatus (100) is irradiated with a laser light and is thereby heated to a desired temperature. The laser light is guided to a region of the substrate (1) by means of an optical fiber (23), and the laser beams emanating from the outlet end of the optical fiber (23) is incident directly or indirectly via a reflecting mirror (33) on the substrate (1). The optical fiber (23) is sheathed with a jacket tube (24) whose interior is vacuum drawn. Using a laser light enables the arrangement to be used even in an oxidizing atmosphere and even an insulating substrate to be heated.
摘要翻译： 公开了一种用于在薄膜制造工艺中加热薄膜形成基板（1）的激光加热装置（20）。 将成膜装置（100）的真空室（101）中的基板（1）照射激光，由此被加热到期望的温度。 激光通过光纤（23）被引导到基板（1）的区域，并且从光纤（23）的出口端发出的激光束直接或间接地通过反射镜（ 33）放置在基板（1）上。 光纤（23）用内套真空抽吸的护套管（24）套管。 使用激光使得即使在氧化气氛中甚至是要加热的绝缘基板也可以使用这种布置。
-
公开(公告)号：US06593164B2
公开(公告)日：2003-07-15
申请号：US10193210
申请日：2002-07-12
申请人： Hikaru Kobayashi , Hideomi Koinuma
发明人： Hikaru Kobayashi , Hideomi Koinuma
IPC分类号： H01L310288
CPC分类号： H01L31/186 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A cyano process of introducing cyano ions (CN−) into an amorphous silicon layer is performed after the amorphous silicon layer has been formed over a substrate or after the layer has been exposed to light. For example, the substrate is immersed in an aqueous solution containing potassium cyanide (KCN) in a vessel. The cyano process eliminates factors (e.g., weak bonds, defects, and centers of recombination) of decrease in photoconductivity of the as-deposited amorphous silicon thin film, which are identifiable in the as-deposited film. As a result, the photoconductivity of the amorphous silicon layer is already higher than usual from the beginning and will hardly decrease even upon exposure to light.
-
公开(公告)号：US5155094A
公开(公告)日：1992-10-13
申请号：US174760
申请日：1988-03-29
申请人： Yoichi Okabe , Atsuki Inoue , Hideomi Koinuma
发明人： Yoichi Okabe , Atsuki Inoue , Hideomi Koinuma
CPC分类号： H01L39/225 , Y10S505/70 , Y10S505/701 , Y10S505/702 , Y10S505/78
摘要： A superconductive device and method for the manufacture thereof is disclosed, having a tunneling Josephson element comprising a first oxide superconductor electrode, a blocking layer consisting of a metal substantially inert to oxygen formed on the surface of the oxide superconductor, an insulating thin film layer formed on the blocking layer, and a second superconductor electrode opposing said first electrode formed on the insulating thin film.
-
公开(公告)号：US08377211B2
公开(公告)日：2013-02-19
申请号：US12309533
申请日：2007-02-01
IPC分类号： C23C16/00
CPC分类号： C23C16/481
摘要： Disclosed is a device for vacuum processing that performs vapor-deposition on a substrate being heated in a vacuum chamber; the device, wherein the chamber has a light transmissible window formed in a section of the chamber; the light transmissible window and a holding part holding the substrate are connected by a linear space isolated from other parts in the chamber; a laser emitter is installed outside the light transmissible window; and the laser emitter emits a laser beam to the substrate through the linear space, thereby heating the substrate. This device enables laser heating, eliminating conventional drawbacks such as a decrease in laser output.
摘要翻译： 公开了一种真空处理装置，其在真空室内被加热的基板上进行气相沉积; 所述装置，其中所述室具有形成在所述室的一部分中的透光窗; 光透射窗和保持基板的保持部通过与室内的其他部分分离的直线空间连接; 激光发射器安装在透光窗外; 并且激光发射器通过线性空间向基板发射激光束，从而加热基板。 该装置能够激光加热，消除诸如激光输出减少的常规缺点。
-
-
-
-
-
-
-
-
-
搜索结果
45 条记录 (耗时 0.025 秒)
