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公开(公告)号：US20100083487A1
公开(公告)日：2010-04-08
申请号：US12519805
申请日：2009-06-18
IPC分类号： H01C17/06
CPC分类号： H01L45/04 , H01L27/101 , H01L27/2436 , H01L45/12 , H01L45/1233 , H01L45/146 , H01L45/1608 , H01L45/1675 , Y10T29/49099 , Y10T29/49124 , Y10T29/49155
摘要： In a resistance change memory (ReRAM) storing data by utilizing change in resistance of a resistance change element, a transistor T, interlayer insulating films, W plugs and the like are formed on a semiconductor substrate. Thereafter, a Pt film serving as a lower electrode of the resist change element is formed and a transition metal film (Ni film) is formed on the Pt film. After that, the surface of the transition metal film is oxidized to form a transition metal oxide film and a Pt film serving as an upper electrode is formed on the transition metal oxide film.
摘要翻译： 在通过利用电阻变化元件的电阻的变化来存储数据的电阻变化存储器（ReRAM）中，在半导体衬底上形成晶体管T，层间绝缘膜，W插头等。 此后，形成用作抗蚀剂改变元件的下电极的Pt膜，并在Pt膜上形成过渡金属膜（Ni膜）。 之后，过渡金属膜的表面被氧化以形成过渡金属氧化物膜，并且在过渡金属氧化物膜上形成用作上部电极的Pt膜。
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公开(公告)号：US08533938B2
公开(公告)日：2013-09-17
申请号：US12519805
申请日：2009-06-18
IPC分类号： H01C17/06
CPC分类号： H01L45/04 , H01L27/101 , H01L27/2436 , H01L45/12 , H01L45/1233 , H01L45/146 , H01L45/1608 , H01L45/1675 , Y10T29/49099 , Y10T29/49124 , Y10T29/49155
摘要： In a resistance change memory (ReRAM) storing data by utilizing change in resistance of a resistance change element, a transistor T, interlayer insulating films, W plugs and the like are formed on a semiconductor substrate. Thereafter, a Pt film serving as a lower electrode of the resist change element is formed and a transition metal film (Ni film) is formed on the Pt film. After that, the surface of the transition metal film is oxidized to form a transition metal oxide film and a Pt film serving as an upper electrode is formed on the transition metal oxide film.
摘要翻译： 在通过利用电阻变化元件的电阻的变化来存储数据的电阻变化存储器（ReRAM）中，在半导体衬底上形成晶体管T，层间绝缘膜，W插头等。 此后，形成用作抗蚀剂改变元件的下电极的Pt膜，并在Pt膜上形成过渡金属膜（Ni膜）。 之后，过渡金属膜的表面被氧化以形成过渡金属氧化物膜，并且在过渡金属氧化物膜上形成用作上部电极的Pt膜。
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公开(公告)号：US08106377B2
公开(公告)日：2012-01-31
申请号：US12519913
申请日：2009-06-18
申请人： Hideyuki Noshiro
发明人： Hideyuki Noshiro
IPC分类号： H01L29/94
CPC分类号： H01L27/101 , G11C13/0007 , G11C2213/32 , G11C2213/55 , G11C2213/56 , G11C2213/79 , H01L27/2436 , H01L45/04 , H01L45/12 , H01L45/1233 , H01L45/146 , H01L45/1625 , H01L45/1675
摘要： In a resistance change element (ReRAM) storing data by utilizing change in resistance of a resistance change element, the resistance change element is configured of a lower electrode made of a noble metal such as Pt, a transition metal film made of a transition metal such as Ni, a transition metal oxide film made of a transition metal oxide such as NiOx, and a lower electrode made of a noble metal such as Pt.
摘要翻译： 在通过利用电阻变化元件的电阻的变化来存储数据的电阻变化元件（ReRAM）中，电阻变化元件由Pt等贵金属构成的下电极，过渡金属等过渡金属膜 作为Ni，由过渡金属氧化物如NiOx制成的过渡金属氧化物膜和由贵金属如Pt制成的下电极。
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公开(公告)号：US06617626B2
公开(公告)日：2003-09-09
申请号：US09797430
申请日：2001-02-28
申请人： Soichiro Ozawa , Shan Sun , Hideyuki Noshiro , George Hickert , Katsuyoshi Matsuura , Fan Chu , Takeyasu Saito
发明人： Soichiro Ozawa , Shan Sun , Hideyuki Noshiro , George Hickert , Katsuyoshi Matsuura , Fan Chu , Takeyasu Saito
IPC分类号： H01L2976
CPC分类号： H01L27/11507 , H01L21/31691 , H01L27/11502 , H01L28/55
摘要： A ferroelectric random access memory has a ferroelectric capacitor formed of a stacking of a lower electrode, a PZT film and an upper electrode of SrRuO3, wherein the PZT film includes pinholes, with a pinhole density of about 17/&mgr;m2 or less.
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公开(公告)号：US06515843B2
公开(公告)日：2003-02-04
申请号：US09166141
申请日：1998-10-02
IPC分类号： H01G4008
CPC分类号： H01L21/7687 , C23C14/0641 , C23C16/04 , C23C16/18 , C23C16/40 , H01L21/2855 , H01L21/28556 , H01L21/28568 , H01L21/76879 , H01L27/1085 , H01L27/10855 , H01L28/55 , H01L28/60 , H01L28/75
摘要： The present invention relates to semiconductor techniques using high dielectric oxides, more specifically to a thin film forming method for forming a thin film which is suitable as the electrodes of the oxide high dielectrics, a capacitor device using the oxide high dielectrics and a method for fabricating the same, an a semiconductor device using the capacitor device and a method for fabricating the semiconductor device. The capacitor device includes at least one of a pair of electrodes which is formed of a material containing titanium nitride of (200) orientation. This permits the capacitor device to have good quality even in a case that the capacitor dielectric film is formed of a high dielectric thin film grown in an oxidizing atmosphere. The capacitor device includes the electrodes of titanium nitride film, whereby the electrodes can be patterned by RIE, which much improves processing precision of the electrode patterning, and throughputs.
摘要翻译： 本发明涉及使用高电介质氧化物的半导体技术，更具体地涉及一种用于形成适合作为氧化物高电介质的电极的薄膜的薄膜形成方法，使用该氧化物高电介质的电容器器件及其制造方法 使用电容器器件的半导体器件和制造半导体器件的方法相同。 电容器装置包括由包含（200）取向的氮化钛的材料形成的一对电极中的至少一个。 这使得电容器器件即使在电容器电介质膜由在氧化气氛中生长的高电介质薄膜形成的情况下也具有良好的质量。 电容器装置包括氮化钛膜的电极，由此可以通过RIE对电极进行图案化，这大大提高了电极图案化的处理精度和产量。
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公开(公告)号：US08227782B2
公开(公告)日：2012-07-24
申请号：US12487214
申请日：2009-06-18
申请人： Hideyuki Noshiro
发明人： Hideyuki Noshiro
CPC分类号： H01L27/101 , H01L27/2436 , H01L45/08 , H01L45/1253 , H01L45/146 , H01L45/1625 , H01L45/1633
摘要： In a resistance change memory (ReRAM) storing data by utilizing change in resistance of a resistance change element, a lower electrode (ground-side electrode) of the resistance change element is formed of a transition metal such as Ni, and an upper electrode (positive polarity-side electrode) is configured of a noble metal such as Pt. In addition, a transition metal oxide film between the lower electrode and the upper electrode is formed of an oxide film (NiOx film) of a transition metal that is of the same kind as the transition metal constituting the lower electrode, for example.
摘要翻译： 在通过利用电阻变化元件的电阻的变化来存储数据的电阻变化存储器（ReRAM）中，电阻变化元件的下电极（接地侧电极）由诸如Ni的过渡金属和上电极（ 正极侧电极）由Pt等贵金属构成。 此外，下电极和上电极之间的过渡金属氧化物膜例如由与构成下电极的过渡金属同样的过渡金属的氧化物膜（NiOx膜）形成。
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7.发明申请公开(公告)号：US20110280064A1
公开(公告)日：2011-11-17
申请号：US13194029
申请日：2011-07-29
申请人： Hideyuki Noshiro
发明人： Hideyuki Noshiro
IPC分类号： G11C11/00 , H01L21/8239 , H01L45/00
CPC分类号： G11C11/5685 , G11C11/161 , G11C11/5678 , G11C13/0004 , G11C13/0007 , G11C2213/15 , G11C2213/34 , G11C2213/79 , H01L27/228 , H01L27/2436 , H01L45/1233 , H01L45/144 , H01L45/146
摘要： A composite resistance variable element includes a first resistance variable element in which a resistance value varies corresponding to a direction of inner magnetization, and a second resistance variable element connected in series to the first resistance variable element. A resistance value of the second resistance variable element varies corresponding to a magnitude of at least one of a voltage applied to the second resistance variable element and a current flowing through the second resistance variable element, irrespective of whether the voltage and the current are positive or negative.
摘要翻译： 复合电阻可变元件包括其中电阻值对应于内部磁化方向变化的第一电阻可变元件和与第一电阻可变元件串联连接的第二电阻可变元件。 第二电阻可变元件的电阻值对应于施加到第二电阻可变元件的电压和流过第二电阻可变元件的电流中的至少一个的大小而变化，而不管电压和电流是正还是 负。
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公开(公告)号：US20090230391A1
公开(公告)日：2009-09-17
申请号：US12400272
申请日：2009-03-09
申请人： Hideyuki Noshiro
发明人： Hideyuki Noshiro
IPC分类号： H01L29/68 , H01L21/02 , H01L21/311
CPC分类号： H01L45/04 , H01L27/2436 , H01L45/1233 , H01L45/146 , H01L45/1608 , H01L45/1633 , H01L45/1675
摘要： A method for manufacturing a resistance storage element includes forming a lower electrode layer over a semiconductor substrate, forming a transition metal film over the lower electrode layer, forming an upper electrode layer over the transition metal film, and supplying oxygen contained in the lower electrode layer or the upper electrode layer to oxidize the transition metal film.
摘要翻译： 一种制造电阻存储元件的方法包括在半导体衬底上形成下电极层，在下电极层上形成过渡金属膜，在过渡金属膜上形成上电极层，并供给下电极层中所含的氧 或上电极层以氧化过渡金属膜。
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公开(公告)号：US07029984B2
公开(公告)日：2006-04-18
申请号：US11136564
申请日：2005-05-25
申请人： Yoshimasa Horii , Masaaki Nakabayashi , Masaki Kurasawa , Kou Nakamura , Kazuaki Takai , Hideyuki Noshiro , Shigeyoshi Umemiya
发明人： Yoshimasa Horii , Masaaki Nakabayashi , Masaki Kurasawa , Kou Nakamura , Kazuaki Takai , Hideyuki Noshiro , Shigeyoshi Umemiya
IPC分类号： H01L21/8242
CPC分类号： H01L27/11507 , H01L27/11502
摘要： A method is disclosed for fabricating a semiconductor device having a memory employing a ferroelectric capacitor in which the orientation of the ferroelectric film is controlled. The method for fabricating the semiconductor device includes a first film deposition process for forming a first ferroelectric layer, and a second film deposition process for forming a second ferroelectric layer on the first ferroelectric layer. The film deposition temperature of the first film deposition process is set to at least 600° C.
摘要翻译： 公开了一种用于制造具有其中控制强电介质膜的取向的铁电电容器的存储器的半导体器件的方法。 制造半导体器件的方法包括用于形成第一铁电体层的第一膜沉积工艺和用于在第一铁电层上形成第二铁电层的第二膜沉积工艺。 将第一膜沉积工艺的膜沉积温度设定为至少600℃
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公开(公告)号：US20050215006A1
公开(公告)日：2005-09-29
申请号：US11136564
申请日：2005-05-25
申请人： Yoshimasa Horii , Masaaki Nakabayashi , Masaki Kurasawa , Kou Nakamura , Kazuaki Takai , Hideyuki Noshiro , Shigeyoshi Umemiya
发明人： Yoshimasa Horii , Masaaki Nakabayashi , Masaki Kurasawa , Kou Nakamura , Kazuaki Takai , Hideyuki Noshiro , Shigeyoshi Umemiya
IPC分类号： H01L21/00 , H01L21/8242 , H01L21/8246 , H01L21/84 , H01L27/04 , H01L27/105 , H01L27/115 , H04B3/00
CPC分类号： H01L27/11507 , H01L27/11502
摘要： A method is disclosed for fabricating a semiconductor device having a memory employing a ferroelectric capacitor in which the orientation of the ferroelectric film is controlled. The method for fabricating the semiconductor device includes a first film deposition process for forming a first ferroelectric layer, and a second film deposition process for forming a second ferroelectric layer on the first ferroelectric layer. The film deposition temperature of the first film deposition process is set to at least 600° C.
摘要翻译： 公开了一种用于制造具有其中控制强电介质膜的取向的铁电电容器的存储器的半导体器件的方法。 制造半导体器件的方法包括用于形成第一铁电体层的第一膜沉积工艺和用于在第一铁电层上形成第二铁电层的第二膜沉积工艺。 将第一膜沉积工艺的膜沉积温度设定为至少600℃
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