利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

91 条记录 (耗时 0.033 秒)

    Process for producing deposition films
    8.
    发明授权
    Process for producing deposition films 失效
    沉积膜生产工艺

    公开(公告)号：US4683146A

    公开(公告)日：1987-07-28

    申请号：US722467

    申请日：1985-04-12

    申请人： Yutaka Hirai ,  Hiroshi Matsuda ,  Ken Eguchi ,  Masahiro Haruta ,  Yukuo Nishimura ,  Takashi Nakagiri

    发明人： Yutaka Hirai ,  Hiroshi Matsuda ,  Ken Eguchi ,  Masahiro Haruta ,  Yukuo Nishimura ,  Takashi Nakagiri

    IPC分类号： C23C16/24 ,  H01L21/205 ,  B05D3/06

    CPC分类号： H01L21/02532 ,  C23C16/24 ,  H01L21/0237 ,  H01L21/0245 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262

    摘要： A process for producing deposition films is provided which comprises forming a gaseous atmosphere of at least one compound silicon hydride selected from the group consisting of;(A) straight chain silicon hydrides represented by the general formulaSi.sub.n H.sub.2n+2 wherein n is an integer 4 or more;(B) cyclic silicon hydrides unsubstituted or substituted by a linear or branched silicon hydride residue which are represented by the general formulaSi.sub.m H.sub.2m wherein m is 3, 4, 5, or 6; and(C) branched chain silicon hydrides represented by the general formulaSi.sub.p H.sub.q wherein p is an integer of 4 or more and q is an interger of 10 or more;in a reaction chamber containing a substrate, and exerting light energy on the atmosphere to excite and decompose the silicon hydride, thereby a silicon-containing layer on the substrate.

    摘要翻译： 提供一种生产沉积膜的方法，其包括形成至少一种选自以下的化合物氢化硅的气态气氛： （A）由通式SinH2n + 2表示的直链氢化氢，其中n为整数4以上; （B）未被取代或被直链或支链氢化硅残基取代的环状硅氢化物，其由通式SimH 2 m表示，其中m为3,4,5或6; 和（C）由通式SipHq表示的支链氢化氢，其中p为4以上的整数，q为10以上的整数; 在含有衬底的反应室中，并且在大气中施加光能以激发和分解氢化硅，从而在衬底上形成含硅层。

    Method of forming deposition film
    10.
    发明授权
    Method of forming deposition film 失效
    形成沉积膜的方法

    公开(公告)号：US4683147A

    公开(公告)日：1987-07-28

    申请号：US722468

    申请日：1985-04-12

    申请人： Ken Eguchi ,  Hiroshi Matsuda ,  Masahiro Haruta ,  Yukuo Nishimura ,  Yutaka Hirai ,  Takashi Nakagiri

    发明人： Ken Eguchi ,  Hiroshi Matsuda ,  Masahiro Haruta ,  Yukuo Nishimura ,  Yutaka Hirai ,  Takashi Nakagiri

    IPC分类号： B05D3/06 ,  B05D7/24 ,  C23C16/22 ,  C23C16/48 ,  H01L21/205

    CPC分类号： B05D1/60 ,  C23C16/22 ,  C23C16/482 ,  C23C16/483 ,  C23C16/488 ,  H01L21/0237 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  B05D3/06

    摘要： A method of forming a silicon-containing film deposited on a substrate, which comprises the steps of forming a gaseous atmosphere of at least one silicon compound selected from the group consisting of compounds represented by general formulas (A), (B), (C), (D), (E) and (F) in a deposition chamber containing the substrate, and applying light energy to the compound to exite and decompose the compound. The compounds of the general formulas (A)-(F) are defined below: (A) Si.sub.n H.sub.m X.sub.l (wherein X is a halogen atom, n is an integer of not less than 3, and m and l are integers of not less than 1, respectively, m+l=2n; if l is an integer of not less than 2, a plurality of X's may represent different halogen atoms) representing a cyclic silicon compound; (B) Si.sub.a X.sub.2a+2 (wherein X is a halogen atom and a is an integer of 1 to 6) representing a chain halogenated silicon compound; (C) Si.sub.b X.sub.2b (wherein X is a halogen atom and b is an integer of 3 to 6) representing a cyclic halogenated silicon compound; (D) Si.sub. c X.sub.d Y.sub.e (wherein X and Y are different halogen atoms, c is an integer of 3 to 6, d and e are integers of not less than 1, and d+e=2c) representing a cyclic halogenated silicon compound; (E) Si.sub.f Y.sub.g Y.sub.h (X and Y are different halogen atoms, f is an integer of 1 to 6, g and h are integers of not less than 1, and g+h=2f+2) representing a chain halogenated silicon compound; and (F) Si.sub.i H.sub.j X.sub.k (wherein X is a halogen atom, i,j and k are integers of not less than 1, and j+k=2i+2) representing a silicon compound.

    摘要翻译： 一种形成沉积在基底上的含硅膜的方法，其包括以下步骤：形成至少一种选自以下通式（A），（B），（C ），（D），（E）和（F），并且向化合物施加光能以排出和分解化合物。 通式（A） - （F）的化合物定义如下：（A）SinHmX1（其中X是卤素原子，n是不小于3的整数，m和l是不小于1的整数 分别为m + 1 = 2n;如果l为不小于2的整数，多个X可以表示不同的卤原子），代表环状硅化合物; （B）代表链卤化硅化合物的SiaX2a + 2（其中X是卤素原子，a是1至6的整数）; （C）表示环状卤代硅化合物的SibX2b（其中，X为卤素原子，b为3〜6的整数） （D）Si cXdYe（其中X和Y是不同的卤素原子，c是3至6的整数，d和e是不小于1的整数，d + e = 2c）表示环状卤化硅化合物; （E）SifYgYh（X和Y是不同的卤素原子，f是1至6的整数，g和h是不小于1的整数，g + h = 2f + 2）代表链卤化硅化合物; 和（F）SiiHjXk（其中X是卤素原子，i，j和k是不小于1的整数，j + k = 2i + 2）表示硅化合物。