公开(公告)号：US08968972B2

公开(公告)日：2015-03-03

申请号：US13883850

申请日：2011-11-18

申请人： Hiroki Yoshikawa ,  Souichi Fukaya ,  Yukio Inazuki ,  Tsuneo Yamamoto ,  Hideo Nakagawa

发明人： Hiroki Yoshikawa ,  Souichi Fukaya ,  Yukio Inazuki ,  Tsuneo Yamamoto ,  Hideo Nakagawa

IPC分类号： G03F1/50 ,  C22C27/06 ,  G03F1/54 ,  G03F1/80 ,  C23C14/06 ,  G03F1/30

CPC分类号： G03F1/80 ,  B32B15/01 ,  C22C27/06 ,  C23C14/0641 ,  C23C14/0676 ,  G03F1/00 ,  G03F1/30 ,  G03F1/50 ,  G03F1/54

摘要： In the chromium-containing material film of the present invention, an element is added thereto and is capable of bringing a mixture of the element and the chromium into a liquid phase at a temperature of 400° C. or lower. The use of such a chromium-containing material film as an optical film (e.g., a light-shielding film, an etching mask film, or an etching stopper film) of a photo mask blank can achieve an improvement in chlorine-dry etching while retaining the same optical characteristics and the like as those of the conventional chromium-containing material film, thereby increasing the patterning precision.

摘要翻译： 在本发明的含铬材料膜中，添加元素，能够使元素和铬的混合物在400℃以下的温度下成为液相。 使用这种含铬材料膜作为光掩模坯料的光学膜（例如遮光膜，蚀刻掩模膜或蚀刻阻挡膜）可以实现氯干蚀刻的改进，同时保持 与常规含铬材料膜相同的光学特性等，从而提高图案形成精度。

公开(公告)号：US08709686B2

公开(公告)日：2014-04-29

申请号：US13883850

申请日：2011-11-18

申请人： Hiroki Yoshikawa ,  Souichi Fukaya ,  Yukio Inazuki ,  Tsuneo Yamamoto ,  Hideo Nakagawa

发明人： Hiroki Yoshikawa ,  Souichi Fukaya ,  Yukio Inazuki ,  Tsuneo Yamamoto ,  Hideo Nakagawa

IPC分类号： G03F1/50

摘要： In the chromium-containing material film of the present invention, an element is added thereto and is capable of bringing a mixture of the element and the chromium into a liquid phase at a temperature of 400° C. or lower. The use of such a chromium-containing material film as an optical film (e.g., a light-shielding film, an etching mask film, or an etching stopper film) of a photo mask blank can achieve an improvement in chlorine-dry etching while retaining the same optical characteristics and the like as those of the conventional chromium-containing material film, thereby increasing the patterning precision.

公开(公告)号：US20130230796A1

公开(公告)日：2013-09-05

申请号：US13883850

申请日：2011-11-18

申请人： Hiroki Yoshikawa ,  Souichi Fukaya ,  Yukio Inazuki ,  Tsuneo Yamamoto ,  Hideo Nakagawa

发明人： Hiroki Yoshikawa ,  Souichi Fukaya ,  Yukio Inazuki ,  Tsuneo Yamamoto ,  Hideo Nakagawa

IPC分类号： G03F1/50

CPC分类号： G03F1/80 ,  B32B15/01 ,  C22C27/06 ,  C23C14/0641 ,  C23C14/0676 ,  G03F1/00 ,  G03F1/30 ,  G03F1/50 ,  G03F1/54

摘要： In the chromium-containing material film of the present invention, an element is added thereto and is capable of bringing a mixture of the element and the chromium into a liquid phase at a temperature of 400° C. or lower. The use of such a chromium-containing material film as an optical film (e.g., a light-shielding film, an etching mask film, or an etching stopper film) of a photo mask blank can achieve an improvement in chlorine-dry etching while retaining the same optical characteristics and the like as those of the conventional chromium-containing material film, thereby increasing the patterning precision.

公开(公告)号：US08017518B2

公开(公告)日：2011-09-13

申请号：US12341495

申请日：2008-12-22

申请人： Yasunori Morinaga ,  Hideo Nakagawa

发明人： Yasunori Morinaga ,  Hideo Nakagawa

IPC分类号： H01L21/00

CPC分类号： H01L21/76814 ,  H01L21/02063 ,  H01L21/3105 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76831

摘要： A method for manufacturing a semiconductor device includes the steps of: (a) forming a low dielectric constant film over a semiconductor substrate; (b) forming a recess in the low dielectric constant film; (c) after the step (b), sequentially performing the steps of (c1) applying an organic solution to the low dielectric constant film and (c2) silylating the low dielectric constant film with a silylating solution; and (d) after the step (c), embedding a metal in the recess to form at least one of a via plug and a metal wiring in the low dielectric constant film. Performing the step (c1) before the step (c2) improves a penetration property of the silylating solution into the low dielectric constant film.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：（a）在半导体衬底上形成低介电常数膜; （b）在低介电常数膜中形成凹部; （c）在步骤（b）之后，顺序地执行步骤（c1）将有机溶液施加到低介电常数膜上，和（c2）用甲硅烷基化溶液甲硅烷基化低介电常数膜; 和（d）在步骤（c）之后，将金属嵌入凹槽中以在低介电常数膜中形成通孔塞和金属布线中的至少一个。 在步骤（c2）之前执行步骤（c1）改善了甲硅烷基化溶液渗透到低介电常数膜中的渗透性。

公开(公告)号：US07997900B2

公开(公告)日：2011-08-16

申请号：US11921679

申请日：2005-06-09

申请人： Hideo Nakagawa

发明人： Hideo Nakagawa

IPC分类号： A61C13/12

CPC分类号： A61C13/267 ,  A61C13/01

摘要： A partial denture having an artificial tooth, a denture base holding the artificial tooth, and a clasp fixed to the denture base, wherein the clasp includes a back-side arm and a front-side arm and does not include a rest, the back-side arm extending in a rearward bulging convex on a back side of a dentition-extended range of the denture base, the front-side arm extending in a forward bulging convex toward a front side of the dentition-extended range of the denture base, wherein the back-side arm and the front-side arm extend within a height range ranging from an extended plane of a top surface of a crown of the artificial tooth toward the denture base side.

摘要翻译： 具有人造牙齿的部分义齿，保持人造牙齿的义齿基座和固定到义齿基座的扣环，其中，所述扣钩包括后侧臂和前侧臂，并且不包括休息， 所述侧臂在所述假牙基部的牙列延伸范围的背侧上向后凸出延伸，所述前侧臂朝向所述义齿基座的齿列延伸范围的前侧朝向凸出的凸起延伸，其中 后侧臂和前侧臂在从人造牙齿的顶部的顶表面的延伸平面朝向假牙基部侧的高度范围内延伸。

公开(公告)号：US20100203733A1

公开(公告)日：2010-08-12

申请号：US12766243

申请日：2010-04-23

申请人： Kenshi Kanegae ,  Shinichi Imai ,  Hideo Nakagawa

发明人： Kenshi Kanegae ,  Shinichi Imai ,  Hideo Nakagawa

IPC分类号： H01L21/467

CPC分类号： H01L21/31053 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76804 ,  H01L21/76805 ,  H01L21/76807 ,  H01L21/76808 ,  H01L21/76822 ,  H01L21/76831 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76835

摘要： An organic/inorganic hybrid film represented by SiCxHyOz (x>0, y≧0, z>0) is plasma-etched with an etching gas containing fluorine, carbon and nitrogen. During the etching, a carbon component is eliminated from the surface portion of the organic/inorganic hybrid film due to the existence of the nitrogen in the etching gas, to thereby reform the surface portion. The reformed surface portion is nicely plasma-etched with the etching gas containing fluorine and carbon.

摘要翻译： 用含有氟，碳和氮的蚀刻气体等离子体蚀刻由SiCxHyOz（x> 0，y≥0，z> 0）表示的有机/无机杂化膜。 在蚀刻期间，由于蚀刻气体中存在氮，从有机/无机混合膜的表面部分除去碳成分，从而使表面部分重新形成。 重整表面部分用含氟和碳的蚀刻气体进行等离子体蚀刻。

公开(公告)号：US07659626B2

公开(公告)日：2010-02-09

申请号：US10578003

申请日：2005-05-20

申请人： Hideo Nakagawa ,  Atsushi Ikeda ,  Nobuo Aoi

发明人： Hideo Nakagawa ,  Atsushi Ikeda ,  Nobuo Aoi

IPC分类号： H01L23/52 ,  H01L21/4763 ,  H01L23/48

CPC分类号： H01L21/76831 ,  H01L21/76846 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes an insulation film 6 formed on a silicon substrate 1, a buried metal interconnect 8 formed in the insulation film 6, and a barrier metal film 7 formed between the insulation film 6 and the metal interconnect 8. The barrier metal film 7 is a metal compound film. The metal compound film is characterized by including at least one of elements forming the insulation film.

摘要翻译： 半导体器件包括形成在硅衬底1上的绝缘膜6，形成在绝缘膜6中的掩埋金属互连8和形成在绝缘膜6和金属互连8之间的阻挡金属膜7.阻挡金属膜7 是金属化合物膜。 金属化合物膜的特征在于包括形成绝缘膜的元素中的至少一种。

公开(公告)号：US20090011065A1

公开(公告)日：2009-01-08

申请号：US11659109

申请日：2006-05-23

申请人： Hideo Nakagawa ,  Masaru Sasago ,  Tomoyasu Murakami

发明人： Hideo Nakagawa ,  Masaru Sasago ,  Tomoyasu Murakami

IPC分类号： B23K10/00 ,  B44C1/22

CPC分类号： C03B11/082 ,  B81C1/00531 ,  B81C2201/0143 ,  C03B11/084 ,  C03B2215/07 ,  C03B2215/412 ,  C04B41/009 ,  C04B41/5346 ,  C04B41/91 ,  C23F4/00 ,  G02B6/136 ,  Y02P40/57 ,  C04B41/0054 ,  C04B35/56

摘要： A WC substrate 7 is etched by using plasma 50 generated from a gas including a chlorine atom.

摘要翻译： 通过使用由包括氯原子的气体产生的等离子体50来蚀刻WC衬底7。

公开(公告)号：US20080290521A1

公开(公告)日：2008-11-27

申请号：US12029569

申请日：2008-02-12

申请人： Yoshitaka Hamada ,  Fujio Yagihashi ,  Takeshi Asano ,  Hideo Nakagawa ,  Masaru Sasago

发明人： Yoshitaka Hamada ,  Fujio Yagihashi ,  Takeshi Asano ,  Hideo Nakagawa ,  Masaru Sasago

IPC分类号： H01L21/31 ,  B32B3/26 ,  C04B41/49 ,  B05D3/02 ,  H01L23/58

CPC分类号： H01L21/31695 ,  C08G77/08 ,  C08L83/04 ,  C09D183/04 ,  H01B3/46 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/3122 ,  Y10T428/31663

摘要： In the invention, a silica sol prepared by hydrolyzing and condensing a silane compound represented by the following formula: Si(OR1)4 or R2nSi(OR3)4-n wherein R1s, R2(s) and R3(s) may be the same or different when a plurality of them are contained in the molecule and each independently represents a linear or branched C1-4 alkyl group in the presence of a hydrophilic basic catalyst and a hydrophobic basic catalyst is used for a conventional porous-film forming composition.

摘要翻译： 在本发明中，通过水解和缩合由下式表示的硅烷化合物制备的硅溶胶：Si（OR1）4或R2nSi（OR3 )4-n，其中R1，R2（s）和R3（s）可以相同 或者在分子中含有多个它们并且在亲水性碱性催化剂存在下各自独立地表示直链或支链C 1-4烷基，并且将疏水性碱性催化剂用于常规多孔膜形成组合物时使用。

公开(公告)号：US20080050926A1

公开(公告)日：2008-02-28

申请号：US11798087

申请日：2007-05-10

申请人： Hideo Nakagawa

发明人： Hideo Nakagawa

IPC分类号： H01L21/302

CPC分类号： H01L21/31116

摘要： In dry etching an insulating film containing silicon and carbon and formed on a wafer, plasma is generated from a mixed gas of a first molecule gas containing carbon and fluorine and a second molecule gas containing nitrogen. At this time, an RF bias of 2 MHz or lower is applied to an electrode on which the wafer is placed.

摘要翻译： 在干法蚀刻含有硅和碳并在晶片上形成的绝缘膜时，由含有碳和氟的第一分子气体和含氮的第二分子气体的混合气体产生等离子体。 此时，对放置晶片的电极施加2MHz以下的RF偏压。