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    Method for manufacturing a semiconductor device
    2.
    发明授权
    Method for manufacturing a semiconductor device 有权
    半导体器件的制造方法

    公开(公告)号：US08017518B2

    公开(公告)日：2011-09-13

    申请号：US12341495

    申请日：2008-12-22

    申请人： Yasunori Morinaga ,  Hideo Nakagawa

    发明人： Yasunori Morinaga ,  Hideo Nakagawa

    IPC分类号： H01L21/00

    CPC分类号： H01L21/76814 ,  H01L21/02063 ,  H01L21/3105 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76831

    摘要： A method for manufacturing a semiconductor device includes the steps of: (a) forming a low dielectric constant film over a semiconductor substrate; (b) forming a recess in the low dielectric constant film; (c) after the step (b), sequentially performing the steps of (c1) applying an organic solution to the low dielectric constant film and (c2) silylating the low dielectric constant film with a silylating solution; and (d) after the step (c), embedding a metal in the recess to form at least one of a via plug and a metal wiring in the low dielectric constant film. Performing the step (c1) before the step (c2) improves a penetration property of the silylating solution into the low dielectric constant film.

    摘要翻译： 一种制造半导体器件的方法包括以下步骤：（a）在半导体衬底上形成低介电常数膜; （b）在低介电常数膜中形成凹部; （c）在步骤（b）之后，顺序地执行步骤（c1）将有机溶液施加到低介电常数膜上，和（c2）用甲硅烷基化溶液甲硅烷基化低介电常数膜; 和（d）在步骤（c）之后，将金属嵌入凹槽中以在低介电常数膜中形成通孔塞和金属布线中的至少一个。 在步骤（c2）之前执行步骤（c1）改善了甲硅烷基化溶液渗透到低介电常数膜中的渗透性。

    Method for fabricating semiconductor device
    3.
    发明授权
    Method for fabricating semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US08486832B2

    公开(公告)日：2013-07-16

    申请号：US11898140

    申请日：2007-09-10

    申请人： Yasunori Morinaga ,  Hideo Nakagawa

    发明人： Yasunori Morinaga ,  Hideo Nakagawa

    IPC分类号： H01L21/44

    CPC分类号： H01L21/76843 ,  H01L21/76873 ,  H01L21/76877

    摘要： A trench is formed in an interlayer dielectric formed on a substrate, then a barrier seed film is formed to cover the interlayer dielectric and the inner walls of the trench, and copper is embedded in the trench by electrolytic plating using the barrier seed film as an electrode. The barrier seed film is a single-layer film made of an oxide or nitride of a refractory metal and contains a low-resistance metal other than copper.

    摘要翻译： 在形成在基板上的层间电介质中形成沟槽，然后形成阻挡种子膜以覆盖沟槽的层间电介质和内壁，并且通过电解电镀将铜嵌入沟槽中，使用阻挡种子膜作为 电极。 阻挡种子膜是由难熔金属的氧化物或氮化物制成的单层膜，并且含有铜以外的低电阻金属。

    Process for preparing a dispersion liquid of zeolite fine particles
    4.
    发明授权
    Process for preparing a dispersion liquid of zeolite fine particles 有权
    制备沸石微粒分散液的方法

    公开(公告)号：US07923522B2

    公开(公告)日：2011-04-12

    申请号：US12060291

    申请日：2008-04-01

    申请人： Yoshitaka Hamada ,  Masaru Sasago ,  Hideo Nakagawa ,  Yasunori Morinaga

    发明人： Yoshitaka Hamada ,  Masaru Sasago ,  Hideo Nakagawa ,  Yasunori Morinaga

    IPC分类号： C08G77/08

    CPC分类号： H01L21/31695 ,  C01B39/04 ,  C23C18/1212 ,  C23C18/122 ,  C23C18/127 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  Y10T428/249953

    摘要： The invention provides a preparation process of organic-group-modified zeolite fine particles excellent in stability of particle size and to be used for electronic materials or the like. The preparation process comprises a first step of obtaining a liquid containing zeolite seed crystals having a particle size of 80 nm or less which are formed in the presence of a structure directing agent, a second step of adding an organic-group-containing hydrolyzable silane compound to the liquid obtained by the first step, and a third step of maturing the liquid of the second step at temperature higher than that of the first step. A dispersion liquid of zeolite fine particles obtained by the process.

    摘要翻译： 本发明提供了粒径稳定性优异且用于电子材料等的有机基团改性沸石微粒的制备方法。 制备方法包括获得在结构导向剂存在下形成的含有粒径为80nm以下的沸石晶种的液体的第一步骤，添加含有机基的可水解硅烷化合物的第二步骤 与第一步骤获得的液体相比，以及第三步骤，在比第一步高的温度下熟化第二步骤的液体。 通过该方法获得的沸石细颗粒的分散液。

    Method for fabricating semiconductor device
    5.
    发明申请
    Method for fabricating semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US20080188076A1

    公开(公告)日：2008-08-07

    申请号：US11898140

    申请日：2007-09-10

    申请人： Yasunori Morinaga ,  Hideo Nakagawa

    发明人： Yasunori Morinaga ,  Hideo Nakagawa

    IPC分类号： H01L21/4763

    CPC分类号： H01L21/76843 ,  H01L21/76873 ,  H01L21/76877

    摘要： A trench is formed in an interlayer dielectric formed on a substrate, then a barrier seed film is formed to cover the interlayer dielectric and the inner walls of the trench, and copper is embedded in the trench by electrolytic plating using the barrier seed film as an electrode. The barrier seed film is a single-layer film made of an oxide or nitride of a refractory metal and contains a low-resistance metal other than copper.

    摘要翻译： 在形成在基板上的层间电介质中形成沟槽，然后形成阻挡种子膜以覆盖沟槽的层间电介质和内壁，并且通过电解电镀将铜嵌入沟槽中，使用阻挡种子膜作为 电极。 阻挡种子膜是由难熔金属的氧化物或氮化物制成的单层膜，并且含有铜以外的低电阻金属。

    METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE
    6.
    发明申请
    METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE 有权
    制造半导体器件的方法

    公开(公告)号：US20090170314A1

    公开(公告)日：2009-07-02

    申请号：US12341495

    申请日：2008-12-22

    申请人： Yasunori Morinaga ,  Hideo Nakagawa

    发明人： Yasunori Morinaga ,  Hideo Nakagawa

    IPC分类号： H01L21/768

    CPC分类号： H01L21/76814 ,  H01L21/02063 ,  H01L21/3105 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76831

    摘要： A method for manufacturing a semiconductor device includes the steps of: (a) forming a low dielectric constant film over a semiconductor substrate; (b) forming a recess in the low dielectric constant film; (c) after the step (b), sequentially performing the steps of (c1) applying an organic solution to the low dielectric constant film and (c2) silylating the low dielectric constant film with a silylating solution; and (d) after the step (c), embedding a metal in the recess to form at least one of a via plug and a metal wiring in the low dielectric constant film. Performing the step (c1) before the step (c2) improves a penetration property of the silylating solution into the low dielectric constant film.

    摘要翻译： 一种制造半导体器件的方法包括以下步骤：（a）在半导体衬底上形成低介电常数膜; （b）在低介电常数膜中形成凹部; （c）在步骤（b）之后，顺序地执行步骤（c1）将有机溶液施加到低介电常数膜上，和（c2）用甲硅烷基化溶液甲硅烷基化低介电常数膜; 和（d）在步骤（c）之后，将金属嵌入凹槽中以在低介电常数膜中形成通孔塞和金属布线中的至少一个。 在步骤（c2）之前执行步骤（c1）改善了甲硅烷基化溶液渗透到低介电常数膜中的渗透性。

    Electrode and fuel cell
    10.
    发明申请
    Electrode and fuel cell 审中-公开
    电极和燃料电池

    公开(公告)号：US20060127745A1

    公开(公告)日：2006-06-15

    申请号：US11346198

    申请日：2006-02-03

    申请人： Hidehiro Sasaki ,  Nobuyasu Suzuki ,  Yasunori Morinaga ,  Yuka Yamada ,  Tadashi Sotomura

    发明人： Hidehiro Sasaki ,  Nobuyasu Suzuki ,  Yasunori Morinaga ,  Yuka Yamada ,  Tadashi Sotomura

    IPC分类号： H01M4/86 ,  H01M4/96

    CPC分类号： H01B1/122 ,  H01M4/8605 ,  H01M4/8668 ,  H01M4/9016 ,  H01M4/96

    摘要： The present invention provides an electrode comprising on an electrode substrate a catalytic layer comprising catalytically active particles and a solid polymer comprising a component represented by Structural Formula (1) below: wherein R1, R2, R3, and R4 are the same or different, and independently represent a hydrogen atom or C1-8 univalent hydrocarbon group, and m and n are independently an integer from 2 to 4; a fuel cell comprising the catalytic layer; and a fuel cell for bioimplantation whose surface is coated with the solid polymer.

    摘要翻译： 本发明提供一种电极，其在电极基板上包含催化剂层，该催化剂层含有催化活性粒子和包含由下述结构式（1）表示的成分的固体聚合物：其中R 1，R 2， R 3，R 3和R 4相同或不同，并且独立地表示氢原子或C 1-8烷基单价 烃基，m和n分别为2〜4的整数。 包含催化层的燃料电池; 以及其表面用固体聚合物涂覆的用于生物植入的燃料电池。