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50 条记录 (耗时 0.017 秒)

    Semiconductor device and method for manufacturing the same
    1.
    发明申请
    Semiconductor device and method for manufacturing the same 有权
    半导体装置及其制造方法

    公开(公告)号：US20080283951A1

    公开(公告)日：2008-11-20

    申请号：US12078894

    申请日：2008-04-08

    申请人： Yoshihiro Nabe ,  Masaki Hatano ,  Hiroshi Asami ,  Akihiro Morimoto

    发明人： Yoshihiro Nabe ,  Masaki Hatano ,  Hiroshi Asami ,  Akihiro Morimoto

    IPC分类号： H01L31/00 ,  H01L21/00

    CPC分类号： H01L27/14618 ,  H01L21/76898 ,  H01L23/3677 ,  H01L23/481 ,  H01L31/0203 ,  H01L2224/05001 ,  H01L2224/05009 ,  H01L2224/0557 ,  H01L2224/05647 ,  H01L2224/13025 ,  H01L2224/16 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/10158 ,  H01L2924/16235 ,  H01L2924/3025 ,  H01L2924/00014

    摘要： A semiconductor device includes a semiconductor substrate having a first electronic circuit and a second electronic circuit formed on an active surface, a pad electrode formed on the active surface by being connected to the first electronic circuit and/or the second electronic circuit, a first opening formed to some point along a depth of the semiconductor substrate toward the pad electrode from a surface opposite to the active surface of the semiconductor substrate, a second opening formed so as to reach the pad electrode from a bottom surface of the first opening, an insulating layer formed by covering sidewall surfaces of the first opening and the second opening, a conductive layer formed by covering at least an inner wall surface of the insulating layer and a bottom surface of the second opening, a third opening formed to some point along the depth of the semiconductor substrate from the surface opposite to the active surface of the semiconductor substrate, and a heat insulator imbedded in the third opening.

    摘要翻译： 半导体器件包括具有第一电子电路和形成在有源表面上的第二电子电路的半导体衬底，通过连接到第一电子电路和/或第二电子电路而形成在有源表面上的焊盘电极，第一开口 从与半导体基板的有源面相反的表面沿着半导体基板的深度朝向焊盘电极的某一点形成第二开口，从第一开口的底面到达焊盘电极，形成绝缘体 通过覆盖第一开口和第二开口的侧壁表面形成的层，通过覆盖绝缘层的至少内壁表面和第二开口的底表面形成的导电层，形成在沿着深度的某个点的第三开口 的半导体衬底从与半导体衬底的有源表面相反的表面，以及绝热体imb 在第三次开幕。

    Semiconductor device and method for manufacturing the same
    4.
    发明授权
    Semiconductor device and method for manufacturing the same 有权
    半导体装置及其制造方法

    公开(公告)号：US08455969B2

    公开(公告)日：2013-06-04

    申请号：US12078894

    申请日：2008-04-08

    申请人： Yoshihiro Nabe ,  Masaki Hatano ,  Hiroshi Asami ,  Akihiro Morimoto

    发明人： Yoshihiro Nabe ,  Masaki Hatano ,  Hiroshi Asami ,  Akihiro Morimoto

    IPC分类号： H01L31/00 ,  H01L21/00

    CPC分类号： H01L27/14618 ,  H01L21/76898 ,  H01L23/3677 ,  H01L23/481 ,  H01L31/0203 ,  H01L2224/05001 ,  H01L2224/05009 ,  H01L2224/0557 ,  H01L2224/05647 ,  H01L2224/13025 ,  H01L2224/16 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/10158 ,  H01L2924/16235 ,  H01L2924/3025 ,  H01L2924/00014

    摘要： A semiconductor device includes a semiconductor substrate having a first electronic circuit and a second electronic circuit formed on an active surface, a pad electrode formed on the active surface by being connected to the first electronic circuit and/or the second electronic circuit, a first opening formed to some point along a depth of the semiconductor substrate toward the pad electrode from a surface opposite to the active surface of the semiconductor substrate, a second opening formed so as to reach the pad electrode from a bottom surface of the first opening, an insulating layer formed by covering sidewall surfaces of the first opening and the second opening, a conductive layer formed by covering at least an inner wall surface of the insulating layer and a bottom surface of the second opening, a third opening formed to some point along the depth of the semiconductor substrate from the surface opposite to the active surface of the semiconductor substrate, and a heat insulator imbedded in the third opening.

    摘要翻译： 半导体器件包括具有第一电子电路和形成在有源表面上的第二电子电路的半导体衬底，通过连接到第一电子电路和/或第二电子电路而形成在有源表面上的焊盘电极，第一开口 从与半导体基板的有源面相反的表面沿着半导体基板的深度朝向焊盘电极的某一点形成第二开口，从第一开口的底面到达焊盘电极，形成绝缘体 通过覆盖第一开口和第二开口的侧壁表面形成的层，通过覆盖绝缘层的至少内壁表面和第二开口的底表面形成的导电层，形成在沿着深度的某个点的第三开口 的半导体衬底从与半导体衬底的有源表面相反的表面，以及绝热体imb 在第三次开幕。

    Spectacle lenses and methods for producing the same
    10.
    发明授权
    Spectacle lenses and methods for producing the same 有权

    公开(公告)号：US11598977B2

    公开(公告)日：2023-03-07

    申请号：US16648766

    申请日：2018-09-19

    申请人： Hiroshi Asami ,  Yasunori Izawa

    发明人： Hiroshi Asami ,  Yasunori Izawa

    IPC分类号： G02C7/02 ,  G02C7/06

    摘要： A lens, system for designing, computer program for designing and a method for designing, with a computer, a progressive addition lens including a distance vision region, a near vision region, and an intermediate vision region, wherein a power gradually changes between the distance vision region and the near vision region, and wherein the progressive addition lens is based on prescription data, the method including: determining a transmission astigmatic performance parameter corresponding to a sum of a prescribed astigmatism included in the prescription data and of a predetermined amount of extra astigmatism; determining lens surface data corresponding to the determined transmission performance parameter.