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公开(公告)号：US5348837A
公开(公告)日：1994-09-20
申请号：US12479
申请日：1993-02-02
CPC分类号： G03F7/70066 , G03F7/2002 , G03F7/701 , G03F7/70191 , G03F7/70241 , G03F7/70308 , G03F7/70333 , G03F7/70375 , G03F7/70891
摘要： A projection exposure apparatus has an effective source, a mask, a projection lens and an optical filter. The mask is illuminated with the light from the effective source having a substantially annular illumination distribution. The optical filter is disposed in the approximate position of the pupil plane of the projection lens. On the pupil plane, the transmittance of a first region is made lower than that of a second region, the first region being inside of the periphery of an annular region substantially conjugate with the effective source having the annular illumination distribution, the second region being outside of the periphery. Built in this manner, the apparatus forms fine patterns whose unit size is at least as small as the wavelength of the light used while maintaining high values of contrast and deep levels of focal length.
摘要翻译： 投影曝光装置具有有效的源，掩模，投影透镜和滤光器。 掩模被来自有源光的光线照射，具有大致环形的照明分布。 滤光器设置在投影透镜的光瞳面的近似位置。 在光瞳面上，使第一区域的透射率低于第二区域的透射率，第一区域在与具有环状照明分布的有效源基本共轭的环状区域的周围的内侧，第二区域在外部 的周边。 以这种方式构建，该装置形成精细图案，其单位尺寸至少与所使用的光的波长一样小，同时保持较高的对比度值和较高的焦距水平。
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公开(公告)号：US5316896A
公开(公告)日：1994-05-31
申请号：US765060
申请日：1991-09-24
申请人： Hiroshi Fukuda , Tsuneo Terasawa
发明人： Hiroshi Fukuda , Tsuneo Terasawa
IPC分类号： G03F1/00 , G03F7/20 , H01L21/027 , H01L21/30 , G03C5/00
CPC分类号： G03F1/30 , G03F1/26 , G03F1/29 , G03F7/2002 , G03F7/70125 , G03F7/70191 , G03F7/70241 , G03F7/70308 , G03F7/70333 , G03F1/36
摘要： A novel method of pattern formation and a projection exposure apparatus use the pupil of a projection lens of the projection exposure apparatus for forming an LSI pattern or the like, and mount at the pupil an optical filter having a complex amplitude transmittance distribution expressed substantially as T(r)=cos (2.pi..beta.r.sup.2 -.theta./2) as a function of a radial coordinate r normalized by the maximum radius of the pupil. Alternatively, the Fourier transform of a layout pattern drawn on the LSI is obtained, the obtained Fourier transform data are multiplied by cos (2.pi..beta.f.sup.2 -.theta./2) (where f is a spatial frequency, and .beta., .theta. appropriate real numbers), the inverse Fourier transform of the resulting product is taken to produce a pattern, and this pattern or an approximate solution thereof is used as a mask pattern thereby to produce an LSI by exposure. As a result, even when the NA is increased and the wavelength shortened to improve the resolution limit, a large depth of focus and a high image quality are obtained at the same time. It is thus possible to form a pattern of 0.2 to 0.3 .mu. m by the use of an optical exposure system.
摘要翻译： 图案形成的新颖方法和投影曝光装置使用用于形成LSI图案等的投影曝光装置的投影透镜的光瞳，并且在瞳孔处安装具有基本上表示为T的复振幅透射率分布的滤光器 （r）= cos（2πβ2-θ/ 2）作为由瞳孔的最大半径归一化的径向坐标r的函数。 或者，获得在LSI上绘制的布局图案的傅里叶变换，将获得的傅里叶变换数据乘以cos（2πβf2-θ/ 2）（其中f是空间频率，β，θ适当的实数 ），得到产物的傅立叶逆变换产生图案，并将该图案或其近似溶液用作掩模图案，从而通过曝光产生LSI。 结果，即使当增加NA并且波长缩短以提高分辨率极限时，也可以同时获得大的聚焦深度和高图像质量。 因此，可以通过使用光学曝光系统形成0.2〜0.3μm的图案。
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公开(公告)号：US5323208A
公开(公告)日：1994-06-21
申请号：US27776
申请日：1993-03-08
申请人： Hiroshi Fukuda , Tsutomu Tawa , Toshihide Dohi
发明人： Hiroshi Fukuda , Tsutomu Tawa , Toshihide Dohi
IPC分类号： G03F7/20 , H01L21/027 , H01L21/30 , G03B27/42
CPC分类号： G03F7/70308
摘要： In a reduction-type projection exposure apparatus provided by the present invention, a spatial filter having a predetermined complex amplitude-transmission distribution is fixed approximately at the pupil position of a projection lens thereof or at such a position that the spatial filter conjugates with the pupil. The complex amplitude transmittance of the spatial filter is controlled by a multiple-interference effect of the multi-layer coating forming the spatial filter or by the surface reflection occurring on the surface of the film which constitutes the spatial filter and has an index of refraction different from the air. The filter can thus be prevented from absorbing light, incurring neither thermal damage nor damage due to dissipated heat. As a result, the reduction-type projection exposure apparatus offers excellent resolution and an outstanding depth of focus.
摘要翻译： 在由本发明提供的还原型投影曝光装置中，具有预定的复振幅传播分布的空间滤光器大致固定在其投影透镜的光瞳位置处或者在空间滤光器与瞳孔共轭的位置处固定 。 空间滤波器的复振幅透射率由形成空间滤波器的多层涂层或由构成空间滤波器的膜的表面上发生的表面反射的多干涉效应控制，并且具有不同的折射率 从空中 因此，可以防止过滤器吸收光，不会导致热损伤，也不会由于散热而损坏。 结果，还原型投影曝光装置具有优异的分辨率和优异的聚焦深度。
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4.发明授权Photomask, manufacture of photomask, formation of pattern, manufacture of semiconductor device, and mask pattern design system 失效光掩模，光掩模的制造，图案的形成，半导体器件的制造和掩模图案设计系统
公开(公告)号：US5700601A
公开(公告)日：1997-12-23
申请号：US495836
申请日：1995-06-28
申请人： Norio Hasegawa , Tsuneo Terasawa , Hiroshi Fukuda , Katsuya Hayano , Akira Imai , Akemi Moniwa , Shinji Okazaki
发明人： Norio Hasegawa , Tsuneo Terasawa , Hiroshi Fukuda , Katsuya Hayano , Akira Imai , Akemi Moniwa , Shinji Okazaki
CPC分类号： G03F1/32 , G03F1/26 , G03F1/36 , G03F7/70283 , G03F7/70433
摘要： A photomask used for printing a mask pattern by projection optics, in which a main pattern formed of a transparent area is provided in a semitransparent area formed of a semitransparent film and a phase shifter, and the phase angles of light beams passing through respective areas are different from each other substantially by 180.degree.. The photomask is intended to prevent a reduction in a production yield due to a resolution failure of the photomask, and to prevent generation of an unnecessary projected image. In this photomask, a transparent auxiliary pattern having the same phase angle of light as that of the transparent area is disposed around a main pattern formed of the transparent area, and a distance D between the center or a desired center line of the main pattern and that of the auxiliary pattern satisfies the relationship of D=b.lambda./NAm , where NAm is a mask-side numerical aperture of a projection lens, .lambda. is a wavelength of exposure light, and is a coefficient in the range of 1.35
摘要翻译： 用于通过投影光学器件打印掩模图案的光掩模，其中由透明区域形成的半透明区域设置在由半透明膜和移相器形成的半透明区域中，并且通过各个区域的光束的相位角为 彼此相差180度。 光掩模旨在防止由于光掩模的分辨率故障导致的产量降低，并且防止产生不必要的投影图像。 在该光掩模中，具有与透明区域相同的相位相位角的透明辅助图案设置在由透明区域形成的主图案周围，并且主图案的中心或期望中心线之间的距离D和 辅助图案的图案满足D =bλ/ NAm的关系，其中NAm是投影透镜的掩模侧数值孔径，λ是曝光光的波长，并且b是1.35的范围内的系数
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公开(公告)号：US5418598A
公开(公告)日：1995-05-23
申请号：US225821
申请日：1994-04-11
申请人： Hiroshi Fukuda , Tsuneo Terasawa
发明人： Hiroshi Fukuda , Tsuneo Terasawa
IPC分类号： G03F1/00 , G03F7/20 , H01L21/027 , H01L21/30 , G03B27/70
CPC分类号： G03F1/30 , G03F1/26 , G03F1/29 , G03F7/2002 , G03F7/70125 , G03F7/70191 , G03F7/70241 , G03F7/70308 , G03F7/70333 , G03F1/36
摘要： A novel method of pattern formation and a projection exposure apparatus are the pupil of a projection lens of the projection exposure apparatus for forming an LSI pattern or the like, and mount an optical filter having a complex amplitude transmittance distribution expressed substantially as T(r)=cos(2.pi..beta.r.sup.2 -.theta./2) as a function of a radial coordinate r normalized by the maximum radius of the pupil. Alternatively, the Fourier transform of a layout pattern drawn on the LSI is obtained, the obtained Fourier transform data are multiplied by cos(2.pi..beta.f.sup.2 -.theta./2)(where f is a spatial frequency, and .beta., .theta. appropriate real numbers), the inverse Fourier transform of the resulting product is taken to produce a pattern, and this pattern or an approximate solution thereof is used as a mask pattern thereby to produce an LSI by exposure. As a result, even when the NA is increased and the wavelength shortened to improve the resolution limit, a large depth of focus and a high image quality are obtained at the same time. It is thus possible to form a pattern of 0.2 to 0.3 .mu.m by the use of an optical exposure system.
摘要翻译： 图案形成的新颖方法和投影曝光装置是用于形成LSI图案等的投影曝光装置的投影透镜的光瞳，并且安装具有基本上表示为T（r）的复振幅透射率分布的滤光器， 作为由瞳孔的最大半径归一化的径向坐标r的函数的cos（2πβ-β2-θ/ 2）。 或者，获得在LSI上绘制的布局图案的傅里叶变换，将获得的傅里叶变换数据乘以cos（2πβf2-θ/ 2）（其中f是空间频率，β，θ适当的实数 ），得到产物的傅立叶逆变换产生图案，并将该图案或其近似溶液用作掩模图案，从而通过曝光产生LSI。 结果，即使当增加NA并且波长缩短以提高分辨率极限时，也可以同时获得大的聚焦深度和高图像质量。 因此，可以通过使用光学曝光系统形成0.2〜0.3μm的图案。
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公开(公告)号：US5235400A
公开(公告)日：1993-08-10
申请号：US418525
申请日：1989-10-10
IPC分类号： G01N21/45 , G01N21/956 , G03F7/20
CPC分类号： G03F7/70866 , G01N21/956 , G01N21/45
摘要： A method of and an apparatus for detecting a defect on a phase-shifting mask for use in a projection aligner in which either or both of respective intensities of transmitted and reflected light beams from the mask illuminated with light are used for detecting a defect on the mask.
摘要翻译： 一种用于检测用于投影对准器的相移掩模上的缺陷的方法和装置，其中使用由光照射的掩模的透射和反射光束的各个强度中的任一个或两个来检测 面具。
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7.发明授权
公开(公告)号：US5222112A
公开(公告)日：1993-06-22
申请号：US812022
申请日：1991-12-23
CPC分类号： G03F7/7085 , G03F7/2039 , G03F7/702 , G03F7/70233 , G03F7/70283 , G03F7/70358 , G03F7/70558 , G03F7/70566 , G03F7/70583 , G21K1/06
摘要： In printing patterns on a mask onto a wafer with high accuracy via a reflective reduction projection optical system by using an X-ray or vacuum ultraviolet beam there is an elliptical mirror having a source position defined in an X-ray source and a position of reflection image of entrance pupil of an imaging optical system with respect to the mask as foci and introducing means for synchronously scanning the mask and wafer. Due to inserting a plane mirror for bending an X-ray by approximately 90.degree. at at least one point in the imaging optical system so that the plane of incidence may be perpendicular to the polarization plane the reflectivity does not lower even when the angle of incidence is 45.degree.. A reflecting mirror or an X-ray filter having a lower reflectivity in the peripheral part thereof as compared with the reflectivity of the central part thereof in the stop position of the imaging optical system, brings about an effect of lessened influence of mutual interference between adjacent pattern provides pattern printing with high shape accuracy.
摘要翻译： 通过使用X射线或真空紫外线，通过反射式还原投影光学系统将掩模上的印刷图案高精度地印刷在晶片上，具有在X射线源和反射位置中定义的源位置的椭圆镜 相对于掩模作为焦点的成像光学系统的入射光瞳的图像和用于同步扫描掩模和晶片的引入装置。 由于在成像光学系统的至少一个点处插入用于将X射线弯曲大约90°的平面镜，使得入射平面可以垂直于偏振面，即使当入射角也是如此，反射率也不降低 是45度。 与其在成像光学系统的停止位置的中心部分的反射率相比，其周边部分具有较低反射率的反射镜或X射线滤光器产生相邻干涉的相互干扰影响减小的效果 图案提供具有高形状精度的图案印刷。
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8.发明授权Method for measuring aberration of projection lens, method for forming patterns, mask, and method for correcting a projection lens 失效用于测量投影透镜的像差的方法，用于形成图案的方法，掩模和用于校正投影透镜的方法公开(公告)号：US06329112B1
公开(公告)日：2001-12-11
申请号：US09438481
申请日：1999-11-12
IPC分类号： G03F900
CPC分类号： G01M11/0264 , G03F7/706
摘要： Optical systems of projection exposure apparatuses may have aberrations, and this fact may hamper the achievement of predetermined accuracy of dimensions and position of a circuit pattern which is necessary to attain desired device performance. Further, because of the difficulty in measuring the above-described aberrations, it was not possible to correct the optical system so as to realize a substantially aberration-free characteristic. The aberrations of a projection lens can be found accurately by steps of: measuring the light intensities of a projected image of a particular pattern on a mask at n different points in the projected image; and solving n simultaneous equations with m (m
摘要翻译： 投影曝光装置的光学系统可能具有像差，并且这个事实可能妨碍达到预期精度的尺寸和电路图案的位置，这是实现期望的装置性能所必需的。 此外，由于难以测量上述像差，因此不可能校正光学系统以实现基本上无像差的特性。投影透镜的像差可以通过以下步骤来准确地发现：测量 在投影图像中的n个不同点的掩模上的特定图案的投影图像的光强度; 并求解m个已知波前像差函数的m（m
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9.发明授权Photomask, manufacture of photomask, formation of pattern, manufacture of semiconductor device, and mask pattern design system 失效光掩模，光掩模的制造，图案的形成，半导体器件的制造和掩模图案设计系统
公开(公告)号：US5895741A
公开(公告)日：1999-04-20
申请号：US906162
申请日：1997-08-05
申请人： Norio Hasegawa , Tsuneo Terasawa , Hiroshi Fukuda , Katsuya Hayano , Akira Imai , Akemi Moniwa , Shinji Okazaki
发明人： Norio Hasegawa , Tsuneo Terasawa , Hiroshi Fukuda , Katsuya Hayano , Akira Imai , Akemi Moniwa , Shinji Okazaki
CPC分类号： G03F1/32 , G03F1/26 , G03F1/36 , G03F7/70283 , G03F7/70433
摘要： A photomask used for printing a mask pattern by projection optics, in which a main pattern formed of a transparent area is provided in a semitransparent area formed of a semitransparent film and a phase shifter, and the phase angles of light beams passing through respective areas are different from each other substantially by 180.degree.. The photomask is intended to prevent a reduction in a production yield due to a resolution failure of the photomask, and to prevent generation of an unnecessary projected image. In this photomask, a transparent auxiliary pattern having the same phase angle of light as that of the transparent area is disposed around a main pattern formed of the transparent area, and a distance D between the center or a desired center line of the main pattern and that of the auxiliary pattern satisfies the relationship of D=b.lambda./NAm , where NAm is a mask-side numerical aperture of a projection lens, .lambda. is a wavelength of exposure light, and is a coefficient in the range of 1.35
摘要翻译： 用于通过投影光学器件印制掩模图案的光掩模，其中由透明区域形成的半透明区域设置在由半透明膜和移相器形成的半透明区域中，并且通过各个区域的光束的相位角为 彼此相差180度。 光掩模旨在防止由于光掩模的分辨率故障导致的产量降低，并且防止产生不必要的投影图像。 在该光掩模中，具有与透明区域相同的相位相位角的透明辅助图案设置在由透明区域形成的主图案周围，并且主图案的中心或期望中心线之间的距离D和 辅助图案的图案满足D =bλ/ NAm的关系，其中NAm是投影透镜的掩模侧数值孔径，λ是曝光光的波长，并且b是1.35的范围内的系数
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公开(公告)号：US5595857A
公开(公告)日：1997-01-21
申请号：US543254
申请日：1995-10-18
申请人： Hiroshi Fukuda , Tsuneo Terasawa
发明人： Hiroshi Fukuda , Tsuneo Terasawa
IPC分类号： G03F1/00 , G03F7/20 , H01L21/027 , H01L21/30 , G03C5/00
CPC分类号： G03F1/30 , G03F1/26 , G03F1/29 , G03F7/2002 , G03F7/70125 , G03F7/70191 , G03F7/70241 , G03F7/70308 , G03F7/70333 , G03F1/36
摘要： A novel method of pattern formation and a projection exposure apparatus are disclosed, in which the pupil of a projection lens of the projection exposure apparatus used for forming an LSI pattern or the like has mounted thereon an optical filter having a complex amplitude transmittance distribution expressed substantially as T(r)=cos (2.pi..beta.r.sup.2 -.theta./2) as a function of a radial coordinate r normalized by the maximum radius of the pupil. Alternatively, Fourier transform of a layout pattern drawn on the LSI is obtained, an obtained Fourier transform data is multiplied by cos (2.pi..beta.f.sup.2 -.theta./2) (where f is a spatial frequency, and .beta., .theta. appropriate real numbers), the inverse Fourier transform of the resulting product is taken to produce a pattern, and this pattern or an approximate solution thereof is used as a mask pattern thereby to produce an LSI by exposure. As a result, even when the NA is increased and the wavelength shortened to improve the resolution limit, a large depth of focus and a high image quality are obtained at the same time. It is thus possible to form a pattern of 0.2 to 0.3 .mu.m by the use of an optical exposure system.
摘要翻译： 公开了一种图案形成的新颖方法和投影曝光装置，其中用于形成LSI图案等的投影曝光装置的投影透镜的光瞳上安装了具有基本上表示的复振幅透射率分布的滤光器 作为由瞳孔的最大半径归一化的径向坐标r的函数的T（r）= cos（2πβ2-θ/ 2）。 或者，获得在LSI上绘制的布局图案的傅里叶变换，将获得的傅里叶变换数据乘以cos（2πβf2-θ/ 2）（其中f是空间频率，β，θ适当的实数） ，得到产物的傅立叶逆变换产生图案，并将该图案或其近似溶液用作掩模图案，从而通过曝光产生LSI。 结果，即使当增加NA并且波长缩短以提高分辨率极限时，也可以同时获得大的聚焦深度和高图像质量。 因此，可以通过使用光学曝光系统形成0.2〜0.3μm的图案。
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