公开(公告)号：US5418598A

公开(公告)日：1995-05-23

申请号：US225821

申请日：1994-04-11

申请人： Hiroshi Fukuda ,  Tsuneo Terasawa

发明人： Hiroshi Fukuda ,  Tsuneo Terasawa

IPC分类号： G03F1/00 ,  G03F7/20 ,  H01L21/027 ,  H01L21/30 ,  G03B27/70

CPC分类号： G03F1/30 ,  G03F1/26 ,  G03F1/29 ,  G03F7/2002 ,  G03F7/70125 ,  G03F7/70191 ,  G03F7/70241 ,  G03F7/70308 ,  G03F7/70333 ,  G03F1/36

摘要： A novel method of pattern formation and a projection exposure apparatus are the pupil of a projection lens of the projection exposure apparatus for forming an LSI pattern or the like, and mount an optical filter having a complex amplitude transmittance distribution expressed substantially as T(r)=cos(2.pi..beta.r.sup.2 -.theta./2) as a function of a radial coordinate r normalized by the maximum radius of the pupil. Alternatively, the Fourier transform of a layout pattern drawn on the LSI is obtained, the obtained Fourier transform data are multiplied by cos(2.pi..beta.f.sup.2 -.theta./2)(where f is a spatial frequency, and .beta., .theta. appropriate real numbers), the inverse Fourier transform of the resulting product is taken to produce a pattern, and this pattern or an approximate solution thereof is used as a mask pattern thereby to produce an LSI by exposure. As a result, even when the NA is increased and the wavelength shortened to improve the resolution limit, a large depth of focus and a high image quality are obtained at the same time. It is thus possible to form a pattern of 0.2 to 0.3 .mu.m by the use of an optical exposure system.

摘要翻译： 图案形成的新颖方法和投影曝光装置是用于形成LSI图案等的投影曝光装置的投影透镜的光瞳，并且安装具有基本上表示为T（r）的复振幅透射率分布的滤光器， 作为由瞳孔的最大半径归一化的径向坐标r的函数的cos（2πβ-β2-θ/ 2）。 或者，获得在LSI上绘制的布局图案的傅里叶变换，将获得的傅里叶变换数据乘以cos（2πβf2-θ/ 2）（其中f是空间频率，β，θ适当的实数 ），得到产物的傅立叶逆变换产生图案，并将该图案或其近似溶液用作掩模图案，从而通过曝光产生LSI。 结果，即使当增加NA并且波长缩短以提高分辨率极限时，也可以同时获得大的聚焦深度和高图像质量。 因此，可以通过使用光学曝光系统形成0.2〜0.3μm的图案。

公开(公告)号：US5235400A

公开(公告)日：1993-08-10

申请号：US418525

申请日：1989-10-10

申请人： Tsuneo Terasawa ,  Norio Hasegawa ,  Toshihiko Tanaka ,  Hiroshi Fukuda ,  Toshiei Kurosaki

发明人： Tsuneo Terasawa ,  Norio Hasegawa ,  Toshihiko Tanaka ,  Hiroshi Fukuda ,  Toshiei Kurosaki

IPC分类号： G01N21/45 ,  G01N21/956 ,  G03F7/20

CPC分类号： G03F7/70866 ,  G01N21/956 ,  G01N21/45

摘要： A method of and an apparatus for detecting a defect on a phase-shifting mask for use in a projection aligner in which either or both of respective intensities of transmitted and reflected light beams from the mask illuminated with light are used for detecting a defect on the mask.

摘要翻译： 一种用于检测用于投影对准器的相移掩模上的缺陷的方法和装置，其中使用由光照射的掩模的透射和反射光束的各个强度中的任一个或两个来检测 面具。

公开(公告)号：US5222112A

公开(公告)日：1993-06-22

申请号：US812022

申请日：1991-12-23

申请人： Tsuneo Terasawa ,  Masaaki Itou ,  Shigeo Moriyama ,  Soichi Katagiri ,  Hiroshi Fukuda

发明人： Tsuneo Terasawa ,  Masaaki Itou ,  Shigeo Moriyama ,  Soichi Katagiri ,  Hiroshi Fukuda

IPC分类号： G03F7/20 ,  G21K1/06

CPC分类号： G03F7/7085 ,  G03F7/2039 ,  G03F7/702 ,  G03F7/70233 ,  G03F7/70283 ,  G03F7/70358 ,  G03F7/70558 ,  G03F7/70566 ,  G03F7/70583 ,  G21K1/06

摘要： In printing patterns on a mask onto a wafer with high accuracy via a reflective reduction projection optical system by using an X-ray or vacuum ultraviolet beam there is an elliptical mirror having a source position defined in an X-ray source and a position of reflection image of entrance pupil of an imaging optical system with respect to the mask as foci and introducing means for synchronously scanning the mask and wafer. Due to inserting a plane mirror for bending an X-ray by approximately 90.degree. at at least one point in the imaging optical system so that the plane of incidence may be perpendicular to the polarization plane the reflectivity does not lower even when the angle of incidence is 45.degree.. A reflecting mirror or an X-ray filter having a lower reflectivity in the peripheral part thereof as compared with the reflectivity of the central part thereof in the stop position of the imaging optical system, brings about an effect of lessened influence of mutual interference between adjacent pattern provides pattern printing with high shape accuracy.

摘要翻译： 通过使用X射线或真空紫外线，通过反射式还原投影光学系统将掩模上的印刷图案高精度地印刷在晶片上，具有在X射线源和反射位置中定义的源位置的椭圆镜 相对于掩模作为焦点的成像光学系统的入射光瞳的图像和用于同步扫描掩模和晶片的引入装置。 由于在成像光学系统的至少一个点处插入用于将X射线弯曲大约90°的平面镜，使得入射平面可以垂直于偏振面，即使当入射角也是如此，反射率也不降低 是45度。 与其在成像光学系统的停止位置的中心部分的反射率相比，其周边部分具有较低反射率的反射镜或X射线滤光器产生相邻干涉的相互干扰影响减小的效果 图案提供具有高形状精度的图案印刷。

公开(公告)号：US06329112B1

公开(公告)日：2001-12-11

申请号：US09438481

申请日：1999-11-12

申请人： Hiroshi Fukuda ,  Seiichiro Shirai ,  Tsuneo Terasawa ,  Katsuya Hayano ,  Norio Hasegawa

发明人： Hiroshi Fukuda ,  Seiichiro Shirai ,  Tsuneo Terasawa ,  Katsuya Hayano ,  Norio Hasegawa

IPC分类号： G03F900

CPC分类号： G01M11/0264 ,  G03F7/706

摘要： Optical systems of projection exposure apparatuses may have aberrations, and this fact may hamper the achievement of predetermined accuracy of dimensions and position of a circuit pattern which is necessary to attain desired device performance. Further, because of the difficulty in measuring the above-described aberrations, it was not possible to correct the optical system so as to realize a substantially aberration-free characteristic. The aberrations of a projection lens can be found accurately by steps of: measuring the light intensities of a projected image of a particular pattern on a mask at n different points in the projected image; and solving n simultaneous equations with m (m

摘要翻译： 投影曝光装置的光学系统可能具有像差，并且这个事实可能妨碍达到预期精度的尺寸和电路图案的位置，这是实现期望的装置性能所必需的。 此外，由于难以测量上述像差，因此不可能校正光学系统以实现基本上无像差的特性。投影透镜的像差可以通过以下步骤来准确地发现：测量 在投影图像中的n个不同点的掩模上的特定图案的投影图像的光强度; 并求解m个已知波前像差函数的m（m

公开(公告)号：US5895741A

公开(公告)日：1999-04-20

申请号：US906162

申请日：1997-08-05

申请人： Norio Hasegawa ,  Tsuneo Terasawa ,  Hiroshi Fukuda ,  Katsuya Hayano ,  Akira Imai ,  Akemi Moniwa ,  Shinji Okazaki

发明人： Norio Hasegawa ,  Tsuneo Terasawa ,  Hiroshi Fukuda ,  Katsuya Hayano ,  Akira Imai ,  Akemi Moniwa ,  Shinji Okazaki

IPC分类号： G03F1/00 ,  G03F1/26 ,  G03F1/32 ,  G03F1/36 ,  G03F7/20 ,  G03F9/00

CPC分类号： G03F1/32 ,  G03F1/26 ,  G03F1/36 ,  G03F7/70283 ,  G03F7/70433

摘要： A photomask used for printing a mask pattern by projection optics, in which a main pattern formed of a transparent area is provided in a semitransparent area formed of a semitransparent film and a phase shifter, and the phase angles of light beams passing through respective areas are different from each other substantially by 180.degree.. The photomask is intended to prevent a reduction in a production yield due to a resolution failure of the photomask, and to prevent generation of an unnecessary projected image. In this photomask, a transparent auxiliary pattern having the same phase angle of light as that of the transparent area is disposed around a main pattern formed of the transparent area, and a distance D between the center or a desired center line of the main pattern and that of the auxiliary pattern satisfies the relationship of D=b.lambda./NAm , where NAm is a mask-side numerical aperture of a projection lens, .lambda. is a wavelength of exposure light, and is a coefficient in the range of 1.35

摘要翻译： 用于通过投影光学器件印制掩模图案的光掩模，其中由透明区域形成的半透明区域设置在由半透明膜和移相器形成的半透明区域中，并且通过各个区域的光束的相位角为 彼此相差180度。 光掩模旨在防止由于光掩模的分辨率故障导致的产量降低，并且防止产生不必要的投影图像。 在该光掩模中，具有与透明区域相同的相位相位角的透明辅助图案设置在由透明区域形成的主图案周围，并且主图案的中心或期望中心线之间的距离D和 辅助图案的图案满足D =bλ/ NAm的关系，其中NAm是投影透镜的掩模侧数值孔径，λ是曝光光的波长，并且b是1.35的范围内的系数