公开(公告)号：US08574448B2

公开(公告)日：2013-11-05

申请号：US12752813

申请日：2010-04-01

申请人： Hiroshi Kannan ,  Noboru Tamura ,  Kazuya Dobashi

发明人： Hiroshi Kannan ,  Noboru Tamura ,  Kazuya Dobashi

IPC分类号： B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F3/00

CPC分类号： H01J37/321 ,  B08B7/0035 ,  C23G5/00 ,  H01J37/32357 ,  H01L21/3065 ,  H01L21/31116

摘要： A plasma generation method in a toroidal plasma generator that includes a gas passage having a gas entrance and a gas outlet and forming a circuitous path and a coil wound around a part of the gas passage includes the steps of supplying a mixed gas of an Ar gas and an NF3 gas containing at least 5% of NF3 and igniting plasma by driving the coil with a high-frequency power, wherein the plasma ignition step is conducted under a total pressure of 6.65-66.5 Pa.

摘要翻译： 环形等离子体发生器中的等离子体产生方法包括具有气体入口和气体出口并形成迂回路径的气体通道和缠绕在气体通道的一部分上的线圈的步骤包括以下步骤：将Ar气体 以及包含至少5％的NF 3的NF 3气体，并通过以高频功率驱动线圈点燃等离子体，其中等离子体点火步骤在6.65-66.5Pa的总压力下进行。

公开(公告)号：US20060226119A1

公开(公告)日：2006-10-12

申请号：US10562400

申请日：2004-06-25

申请人： Hiroshi Kannan ,  Noboru Tamura ,  Kazuya Dobashi

发明人： Hiroshi Kannan ,  Noboru Tamura ,  Kazuya Dobashi

IPC分类号： B08B6/00 ,  C23F1/00

CPC分类号： H01J37/321 ,  B08B7/0035 ,  C23G5/00 ,  H01J37/32357 ,  H01L21/3065 ,  H01L21/31116

摘要： A plasma generation method in a toroidal plasma generator that includes a gas passage having a gas entrance and a gas outlet and forming a circuitous path and a coil wound around a part of the gas passage includes the steps of supplying a mixed gas of an Ar gas and an NF3 gas containing at least 5% of NF3 and igniting plasma by driving the coil with a high-frequency power, wherein the plasma ignition step is conducted under a total pressure of 6.65-66.5 Pa.

摘要翻译： 环形等离子体发生器中的等离子体产生方法包括具有气体入口和气体出口并形成迂回路径的气体通道和缠绕在气体通道的一部分上的线圈的步骤包括以下步骤：将Ar气体 和含有至少5％的NF 3 N的NF 3气体，并通过以高频功率驱动线圈来点燃等离子体，其中等离子体点火步骤在 总压力为6.65-66.5Pa。

公开(公告)号：US06991684B2

公开(公告)日：2006-01-31

申请号：US10381724

申请日：2001-09-28

申请人： Hiroshi Kannan ,  Noboru Tamura ,  Yasuhiko Kojima ,  Tadahiro Ishizaka

发明人： Hiroshi Kannan ,  Noboru Tamura ,  Yasuhiko Kojima ,  Tadahiro Ishizaka

IPC分类号： C23C16/00

CPC分类号： C23C16/45544 ,  C23C16/34 ,  C23C16/45527 ,  C23C16/4586 ,  C23C16/46 ,  C23C16/463 ,  C23C16/466 ,  H01L21/28562 ,  H01L21/67109 ,  Y10T29/41

摘要： A heater plate, which has a wafer W mounted thereon and which includes a heater in its interior, is placed on a cooling block including a coolant chamber in its interior. The cooling block includes a gas introduction pipe passing therethrough. The gas introduction pipe is connected to a space between the heater plate and the cooling block to make it possible to supply He gas as thermal conduction gas to the space. A gas suction pipe 34 is connected to the space to make it possible to suck He gas.

摘要翻译： 安装有晶片W并且在其内部包括加热器的加热器板被放置在包括其内部的冷却剂室的冷却块上。 冷却块包括通过其中的气体导入管。 气体导入管与加热板和冷却块之间的空间连接，能够将He气体作为导热气体供给到空间。 气体吸入管34连接到该空间，以便可以吸入He气体。

公开(公告)号：USD617018S1

公开(公告)日：2010-06-01

申请号：US29335033

申请日：2009-04-07

申请人： Damon Arthur Schell ,  Hiroshi Kannan

设计人： Damon Arthur Schell ,  Hiroshi Kannan

公开(公告)号：US20050011441A1

公开(公告)日：2005-01-20

申请号：US10498223

申请日：2003-04-15

申请人： Hiroshi Kannan

发明人： Hiroshi Kannan

IPC分类号： C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  H01L21/00 ,  H01L21/205 ,  H01L21/687 ,  C23C16/00

CPC分类号： H01L21/68757 ,  C23C16/45527 ,  C23C16/45544 ,  C23C16/45546 ,  C23C16/4586 ,  C23C16/46 ,  H01L21/67098 ,  H01L21/67103

摘要： A target for processing (W) is placed on a placing member (21) that is in a chamber (12). The placing member (21) comprises a resistive layer (25). A power source (28) forms a magnetic field around an induction coil (27) by passing a current through the induction coil (27) that is provided on the out side of the chamber (12). The resistive layer (25) is heated by induction heating that occurs by the formed magnetic field, and heats the target for processing (W) that is placed on the placing member (21).

摘要翻译： 处理对象（W）放置在室（12）中的放置部件（21）上。 放置构件（21）包括电阻层（25）。 电源（28）通过使电流通过设置在室（12）的外侧的感应线圈（27）而在感应线圈（27）周围形成磁场。 通过由形成的磁场发生的感应加热来加热电阻层（25），并加热放置在放置部件（21）上的加工对象（W）。

公开(公告)号：US08608664B2

公开(公告)日：2013-12-17

申请号：US13000221

申请日：2009-06-19

申请人： Takato Kunitake ,  Hiroshi Kannan

发明人： Takato Kunitake ,  Hiroshi Kannan

IPC分类号： A61B5/05

CPC分类号： A61B5/04001 ,  A61B5/4041 ,  A61B2562/0217 ,  A61B2562/125

摘要： An object of the present invention is to provide a microelectrode capable of recording action potentials of nerve cellsneurons as large-amplitude waveforms and being appropriate for multi-channeling. The electrode 1 of the present invention comprises a conductive linear core material 2, an insulating coating layer 3a with which the outer circumference of the linear core material is coated, and an extending part 3b formed by extending the end part of the coating layer on one tip side of the linear core material beyond the tip in the longitudinal direction of the linear core material, in which a cavity that opens in the extending direction is formed within the extending part.

摘要翻译： 本发明的目的是提供能够将神经细胞神经元的动作电位记录为大振幅波形并适合于多通道的微电极。 本发明的电极1包括导电线性芯材料2，涂覆有线芯材的外周的绝缘涂层3a和通过将涂层的端部延伸在一个上而形成的延伸部分3b 直线芯材的尖端在直线芯材的纵向方向上超过尖端，其中沿延伸方向开口的空腔形成在延伸部分内。

公开(公告)号：US07594517B2

公开(公告)日：2009-09-29

申请号：US10566495

申请日：2004-07-28

申请人： Hiroshi Kannan ,  Tomio Uno ,  Ryousuke Dohi ,  Kouji Nishino ,  Osamu Nakamura ,  Atsushi Matsumoto ,  Nobukazu Ikeda

发明人： Hiroshi Kannan ,  Tomio Uno ,  Ryousuke Dohi ,  Kouji Nishino ,  Osamu Nakamura ,  Atsushi Matsumoto ,  Nobukazu Ikeda

IPC分类号： G05D7/06

CPC分类号： G05D7/0652 ,  Y10T137/7761 ,  Y10T137/8741 ,  Y10T137/87507

摘要： The present invention prevents substantial reduction of flow rate control accuracy in a small flow quantity range, achieves accurate flow rate control over the entire range of flow rate control, and also allows control of a wide pressure range of a chamber with accurate flow rate control. Specifically, a gas supply facility having a plurality of pressure type flow controllers connected in parallel, and a third controller to control operation of the pressure type flow controllers to supply a desired gas exhausted by a vacuum pump to a chamber while controlling its flow rate, is provided wherein one pressure type flow controller is a controller used to control a gas flow rate range up to 10% of the maximum flow rate supplied to the chamber, while the remaining pressure type flow controllers are made to be ones controlling the rest of the gas flow rate range.

摘要翻译： 本发明防止了在小流量范围内的流量控制精度的显着降低，在整个流量控制范围内实现精确的流量控制，并且还允许以精确的流量控制来控制腔室的宽压力范围。 具体而言，具有并联连接的多个压力式流量控制器的气体供给装置和控制压力式流量控制器的动作的第三控制装置，在控制其流量的同时将由真空泵排出的期望气体供给到室， 其中一个压力式流量控制器是用于控制高达提供给腔室的最大流量的10％的气体流量范围的控制器，而剩余的压力型流量控制器被制成控制其余的 气体流量范围。

公开(公告)号：US20050145333A1

公开(公告)日：2005-07-07

申请号：US10501737

申请日：2003-01-17

申请人： Hiroshi Kannan ,  Takaaki Matsuoka

发明人： Hiroshi Kannan ,  Takaaki Matsuoka

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/52 ,  H01L21/285 ,  H01L21/3065 ,  H01L21/31 ,  H01L21/768 ,  C23F1/00 ,  H01L21/306

CPC分类号： C23C16/45525 ,  C23C16/4412 ,  C23C16/52 ,  H01L21/28562 ,  H01L21/76843

摘要： An exhaust line (15) connected to a chamber (13) comprises a TMP (22) and a dry pump (23). The chamber (13) and the TMP (22) are connected by a first exhaust pipe (25), and the TMP (22) and the dry pump (23) are connected by a second exhaust pipe (28). A measuring section (24) monitors a partial pressure of TiCl4 or NH3 in an exhaust gas flowing in the second exhaust pipe (28). Two types of process gases are alternately supplied into the chamber (13) for a predetermined time, and when the partial pressure of one of the supplied process gases in the exhaust gas is reduced to a predetermined value, a control means (12) starts supplying the other process gas.

摘要翻译： 连接到室（13）的排气管（15）包括TMP（22）和干泵（23）。 室（13）和TMP（22）通过第一排气管（25）连接，TMP（22）和干泵（23）通过第二排气管（28）连接。 测量部分（24）监测在第二排气管（28）中流动的排气中的TiCl 4或NH 3的分压。 将两种类型的工艺气体交替地供应到室（13）中预定的时间，并且当排气中的一个供应的处理气体的分压降低到预定值时，控制装置（12）开始供应 其他工艺气体。

公开(公告)号：US20080241385A1

公开(公告)日：2008-10-02

申请号：US10547784

申请日：2004-02-26

申请人： Yasuhiro Oshima ,  Yasuhiko Kojima ,  Takashi Shigeoka ,  Hiroshi Kannan ,  Tadahiro Ishizaka

发明人： Yasuhiro Oshima ,  Yasuhiko Kojima ,  Takashi Shigeoka ,  Hiroshi Kannan ,  Tadahiro Ishizaka

IPC分类号： C23C16/08 ,  C23C16/44

CPC分类号： C23C16/45523 ,  C23C16/34 ,  C23C16/45525 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76843

摘要： A method of rapidly forming a thin film of high quality through film formation by alternate feeding of raw gases. In particular, a method of forming a TiN thin film, comprising repeating operations including causing TiCl4 gas as a raw gas to be adsorbed on a substrate or TiCl4 molecules adsorbed on a substrate and feeding NH3 gas as a reactant gas in a treating chamber so as to effect reaction of TiCl4 and NH3 leading to formation of a TiN film, which method further comprises an operation of, prior to the adsorption of TiCl4 gas on the substrate, feeding reducing H2 gas in the treating chamber (30) so as to change TiCl4 to a state of enhanced likelihood of adsorption on the substrate (e.g., TiCl3).

摘要翻译： 通过交替进料原料气体，通过成膜快速形成高质量的薄膜的方法。 特别是，形成TiN薄膜的方法，包括重复操作，包括使TiCl 4气体作为原料气体吸附在吸附在基底上的TiCl 4分子上 底物并在处理室中加入作为反应气体的NH 3气体，以使TiCl 4和NH 3反应形成，形成 的TiN膜，该方法还包括在衬底上吸附TiCl 4气体之前，在处理室（30）中进料还原H 2气体 ），以便将TiCl 4改变为增加在衬底上的吸附可能性（例如TiCl 3 3）的状态。

公开(公告)号：US20070160757A1

公开(公告)日：2007-07-12

申请号：US11717183

申请日：2007-03-13

申请人： Tadahiro Ishizaka ,  Hiroshi Kannan ,  Yasuhiko Kojima ,  Takashi Shigeoka ,  Yasuhiro Oshima ,  Kohei Kawamura

发明人： Tadahiro Ishizaka ,  Hiroshi Kannan ,  Yasuhiko Kojima ,  Takashi Shigeoka ,  Yasuhiro Oshima ,  Kohei Kawamura

IPC分类号： C23C16/00

CPC分类号： C23C16/45544 ,  C23C16/34 ,  C23C16/4401 ,  C23C16/4412

摘要： In a processing apparatus which performs a film deposition by alternately supplying a plurality of source gases, the source gases are prevented from reacting within an exhaust pipe so as to prevent the exhaust pipe from clogging due to a reaction by-product. A gas supply to a processing container is switched between a TiCl4 supply system and a NH3 supply system. Additionally, a gas exhaust from the processing container is switched between a TiCl4 exhaust system and a NH3 exhaust system. The gas exhaust is switched to the TiCl4 exhaust system when the gas supply is switched to the TiCl4 supply system, and the gas exhaust is switched to the NH3 exhaust system when the gas supply is switched to the NH3 supply system. The switching is performed by a stop valve provided to each of the supply system and the exhaust system.

摘要翻译： 在通过交替供给多个源气体进行膜沉积的处理装置中，防止源气体在排气管内发生反应，以防止排气管因反应副产物而堵塞。 供给到处理容器的气体在TiCl 4供应系统和NH 3供应系统之间切换。 此外，来自处理容器的排气在TiCl 4排气系统和NH 3排气系统之间切换。 当气体供应切换到TiCl 4供应系统时，排气被切换到TiCl 4排气系统，并且排气被切换到NH 3 3气体供应系统切换到NH 3供应系统时。 通过设置在供给系统和排气系统中的每一个的截止阀进行切换。