摘要:
A magnetic information detecting apparatus is disclosed including a recording medium in which magnetic information is recorded and a magnetic field detection unit for detecting the magnetic information, the magnetic field detection unit having its magnetic field detecting section formed of a magnetoresistive element or a Hall element, the magnetic field detecting section surrounding peripheries of the recording medium. The recording medium has a substantially circular cross section. The magnetoresistive element has a structure of an artificial multilayer film formed by alternately stacking a conductor layer and a magnetic layer. The magnetic field detection unit has a soft magnetic body for conducting a magnetic field to the magnetic field detecting section.
摘要:
An artificial lattice film is constituted as a multilayered film in which magnetic layers containing Cu of 1.about.50 atomic percentage and at least one component selected from Fe, Ni and Co and conductive layers are stacked one after another. By forming such an artificial lattice film on a non-magnetic substrate, a magneto-resistance effect element having excellent characteristic for use as magnetic head or magnetic sensor is provided.
摘要:
A magnetoresistance effect element is provided with a magnetoresistance effect film (MR film) formed of alternative laminations of magnetic layers (for example, soft magnetic layers such as Fe--Ni--Co alloy layers) which are coupled anti-ferromagnetically with each other between adjacent magnetic layers and non-magnetic layers (for example, non-magnetic layers such as Cu layers) and provided with a bias soft magnetic layer (for example, SAL layer) for application of a bias magnetic filed to the magnetoresistance effect film, where the anisotropic magnetic field (Hk) in the plane of the bias medium layer is 5 Oe.ltoreq.Hk.ltoreq.15 Oe.
摘要翻译:磁阻效应元件设置有由磁性层(例如Fe-Ni-Co合金层的软磁性层)的替代叠层形成的磁阻效应膜(MR膜),它们在相邻之间相互反铁磁结合 磁性层和非磁性层(例如,诸如Cu层的非磁性层),并且设置有偏置软磁层(例如,SAL层),用于向磁阻效应膜施加偏置磁场,其中 偏置介质层平面内的各向异性磁场(Hk)为5Oe / Hk 15 Oe。
摘要:
A magneto-resistance effect film of an artificial lattice film structure having an alternate lamination of a conductor layer and a magnetic layer, or a magneto-resistance effect film of a spin bulb structure having a lamination of a magnetic layer, a conductor layer and a magnetic layer in that order. The conducting layer is mainly composed of an element selected from the group consisting of Cu, Ag and Cr and also contains 0.1 to 30 atomic percent of an addition element having an upper limit of solid solution at room temperature with respect to the element as the main component of not more than 1 percent. Alternatively, the magnetic layer is mainly composed of Fe, Co or Ni and also contains 0.1 to 30 atomic percent of an addition element having an upper limit of solid solution at room temperature with respect to the element as the main component of not more than 1%. Additionally, the thermal resistance can be improved by utilizing a base plate with a heat conductivity of not less than 2 W/mK.
摘要:
A magnetoresistance film has an artificial lattice film structure having alternating conductive and magnetic layers. The anisotropic magnetic field H.sub.k of the magnetic layers and the anti-ferromagnetic coupling magnetic field H.sub.s between the magnetic layers which face each other through the conductive layers satisfy the relationship H.sub.k
摘要:
In a magnetoresistive effect element using a ferromagnetic tunnel junction having a tunnel barrier layer sandwiched between at least a pair of ferromagnetic layers, a magnetization free layer comprising one of the ferromagnetic layers is composed of a single layer of a material having an amorphous or microcrystal structure or a material layer the main portion of which has an amorphous or microcrystal structure. The magnetoresistive effect element can produce excellent magnetic-resistance characteristics, and a magnetic memory element and a magnetic memory device using the magnetoresistive effect element as a memory element thereof can improve both of write and read characteristics at the same time.
摘要:
An image processing apparatus includes processing circuitry. The processing circuitry is configured to detect a positional shift amount of each of a plurality of images; select a composite target image from the plurality of images based on the detected positional shift amount; and obtain a composite image based on the positional shift amount and the selected composite target image.
摘要:
Provided is a battery pack including: an exterior case formed with one or more hole sections; a battery cell in which a positive electrode terminal section is formed on one end surface thereof and a negative electrode terminal section is formed on the other end surface thereof; a battery holder having a plurality of battery cell receiving sections receiving the battery cell; and a metal plate joined to the battery holder and formed with a terminal contact section.
摘要:
The inventors have found that vitamin K3 and vitamin K5 which may be used in pharmaceuticals and foods or ACNQ, DHNA, or the like which can stimulate the growth of bifidobacteria can inhibit degranulation of basophil-like cells, exhibit a potent degranulation-inhibiting effect, and are useful anti-allergic agents or foods. The present invention provides an anti-allergic agent containing, as an active ingredient, one or more species selected from among 2-amino-3-carboxy-1,4-naphthoquinone, 1,4-dihydroxy-2-naphthoic acid, 1,4-naphthoquinone, 4-amino-2-methyl-1-naphthol, 2-methyl-1,4-naphthoquinone, 2-amino-3-chloro-1,4-naphthoquinone, and a salt thereof.
摘要:
A memory includes: a plurality of memory devices, each including a tunnel magnetic resistance effect device containing a magnetization free layer in which a direction of magnetization can be reversed, a tunnel barrier layer including an insulating material, and a magnetization fixed layer provided with respect to the magnetization free layer via the tunnel barrier layer with a fixed direction of magnetization; a random access memory area in which information is recorded using the direction of magnetization of the magnetization free layer of the memory device; and a read only memory area in which information is recorded depending on whether there is breakdown of the tunnel barrier layer of the memory device or not.