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公开(公告)号:US09174306B2
公开(公告)日:2015-11-03
申请号:US13413827
申请日:2012-03-07
申请人: Hiroshi Morikazu , Yoko Nishino
发明人: Hiroshi Morikazu , Yoko Nishino
CPC分类号: B23K26/064 , B23K26/0624 , B23K26/40 , B23K26/402 , B23K2101/40 , B23K2103/50
摘要: A laser processing method for a nonlinear crystal substrate having a plurality of crossing division lines which includes the step of applying a pulsed laser beam to a work surface of the nonlinear crystal substrate along the division lines to thereby form a plurality of laser processed grooves on the work surface along the division lines. The pulse width of the pulsed laser beam is set to 200 ps or less and the repetition frequency of the pulsed laser beam is set to 50 kHz or less.
摘要翻译: 一种具有多个交叉分割线的非线性晶体基板的激光加工方法,其特征在于,包括:沿着分割线向所述非线性晶体基板的工作面施加脉冲激光束,从而在所述非线性晶体基板上形成多个激光加工槽 工作面沿分界线。 脉冲激光束的脉冲宽度设定为200ps以下,将脉冲激光束的重复频率设定为50kHz以下。
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公开(公告)号:US09193008B2
公开(公告)日:2015-11-24
申请号:US13473824
申请日:2012-05-17
申请人: Hiroshi Morikazu , Keiji Nomaru , Yoko Nishino
发明人: Hiroshi Morikazu , Keiji Nomaru , Yoko Nishino
IPC分类号: B23K26/00 , B23K26/06 , B23K26/02 , H01L21/00 , B23K26/08 , B23K26/36 , B23K26/40 , B23K26/30 , H01L33/00
CPC分类号: B23K26/3584 , B23K26/0613 , B23K26/0622 , B23K26/064 , B23K26/0648 , B23K26/0853 , B23K26/36 , B23K26/364 , B23K26/40 , B23K26/402 , B23K26/60 , B23K2101/40 , B23K2103/50 , H01L33/0095
摘要: A laser processing method of applying a pulsed laser beam to a workpiece formed from a transparent member, thereby performing laser processing to the workpiece. The laser processing method includes a first laser processing step of applying a first pulsed laser beam to a subject area of the workpiece to roughen the subject area and a second laser processing step of applying a second pulsed laser beam to the roughened subject area immediately after performing the first laser processing step, thereby forming a recess in the subject area. The first and second laser processing steps are repeated to thereby form a continuous groove in the subject area.
摘要翻译: 一种将脉冲激光束施加到由透明构件形成的工件上的激光加工方法,从而对工件进行激光加工。 激光加工方法包括:第一激光加工步骤,将第一脉冲激光束施加到工件的被摄体区域以粗糙化被摄体区域;以及第二激光加工步骤,在执行后立即将粗糙化的被摄体区域施加第二脉冲激光束 第一激光加工步骤,从而在主体区域中形成凹部。 重复第一和第二激光加工步骤,从而在主体区域中形成连续的凹槽。
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公开(公告)号:US08759195B2
公开(公告)日:2014-06-24
申请号:US13331554
申请日:2011-12-20
申请人: Hiroshi Morikazu , Yoko Nishino
发明人: Hiroshi Morikazu , Yoko Nishino
IPC分类号: H01L21/30
CPC分类号: H01L33/0079 , B23K26/364 , B23K26/40 , B23K26/57 , B23K2103/172
摘要: An optical device layer (ODL) in an optical device wafer is transferred to a transfer substrate. The ODL is formed on the front side of an epitaxy substrate through a buffer layer. The ODL is partitioned by a plurality of crossing streets to define regions where a plurality of optical devices are formed. The transfer substrate is bonded to the front side of the ODL, and the epitaxy substrate is cut along crossing streets into a plurality of blocks. A laser beam is applied to the epitaxy substrate from the back side of the epitaxy substrate to the unit of the optical device wafer and the transfer substrate in the condition where the focal point of the laser beam is set in the buffer layer, thereby decomposing the buffer layer. The epitaxy substrate divided into the plurality of blocks is peeled off from the ODL.
摘要翻译: 光学器件晶片中的光学器件层(ODL)被转移到转移衬底。 ODL通过缓冲层形成在外延基板的正面上。 ODL被多个交叉街道划分,以限定形成多个光学装置的区域。 转印衬底粘合到ODL的前侧,并且将外延衬底沿着交叉街道切割成多个块。 在激光束的焦点设置在缓冲层中的状态下,将激光束从外延基板的背面施加到外延基板的单元到光学器件晶片和转印基板的单元,从而将激光束分解 缓冲层。 被划分成多个块的外延衬底从ODL剥离。
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公开(公告)号:US20130017640A1
公开(公告)日:2013-01-17
申请号:US13546219
申请日:2012-07-11
申请人: Hiroshi Morikazu , Yoko Nishino
发明人: Hiroshi Morikazu , Yoko Nishino
IPC分类号: H01L33/32
CPC分类号: B23K26/00 , B23K26/40 , H01L23/00 , H01L33/0095 , H01L2924/0002 , H01L2924/00
摘要: A method of processing an optical device wafer having an optical device layer including an n-type semiconductor layer and a p-type semiconductor layer stacked over a sapphire substrate, a buffer layer therebetween, allowing peeling of the sapphire substrate. The method includes joining a transfer substrate to the optical device layer, breaking the buffer layer by irradiation with a pulsed laser beam from the sapphire substrate side of the wafer with the transfer substrate joined to the optical device layer, and peeling the sapphire substrate from the optical device wafer with the buffer layer broken, transferring the optical device layer onto the transfer substrate. The pulsed laser beam has a wavelength longer than an absorption edge of the sapphire substrate and shorter than an absorption edge of the buffer layer, and a pulse width set so that a thermal diffusion length will be not more than 200 nm.
摘要翻译: 一种处理具有包括层叠在蓝宝石衬底上的n型半导体层和p型半导体层的光学器件层的光学器件晶片的方法,其间的缓冲层允许蓝宝石衬底的剥离。 该方法包括将转印衬底接合到光学器件层,通过用晶片的蓝宝石衬底侧的脉冲激光束照射缓冲层,转印衬底接合到光学器件层,并将蓝宝石衬底从 光学器件晶片,缓冲层破裂,将光学器件层转移到转印衬底上。 脉冲激光束具有比蓝宝石衬底的吸收边长长的波长,并且比缓冲层的吸收边短的脉冲宽度,并且设定为使热扩散长度不超过200nm的脉冲宽度。
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公开(公告)号:US20120298636A1
公开(公告)日:2012-11-29
申请号:US13477851
申请日:2012-05-22
申请人: Keiji Nomaru , Hiroshi Morikazu , Yoko Nishino
发明人: Keiji Nomaru , Hiroshi Morikazu , Yoko Nishino
IPC分类号: B23K26/00
CPC分类号: B23K26/032 , B23K26/0622 , B23K26/0643 , B23K26/0861 , B23K26/0876 , B23K26/382 , B23K26/40 , B23K2101/40 , B23K2103/50
摘要: A laser processing apparatus includes a chuck table for holding a workpiece and a laser beam applying unit for applying a laser beam to the workpiece. A laser beam oscillating unit oscillates a laser beam and a focusing unit focuses the laser beam onto the workpiece. A reflecting unit is provided on the optical axis of the focusing unit. A wavelength detecting unit detects the wavelength of the plasma light reflected by the reflecting unit, and a controller determines the material of the workpiece according to a detection signal from the wavelength detecting unit, to control the laser beam applying unit.
摘要翻译: 激光加工装置包括用于保持工件的卡盘台和用于将激光束施加到工件的激光束施加单元。 激光束振荡单元振荡激光束并且聚焦单元将激光束聚焦到工件上。 反射单元设置在聚焦单元的光轴上。 波长检测单元检测由反射单元反射的等离子体光的波长,并且控制器根据来自波长检测单元的检测信号来确定工件的材料,以控制激光束施加单元。
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公开(公告)号:US20120292297A1
公开(公告)日:2012-11-22
申请号:US13473824
申请日:2012-05-17
申请人: Hiroshi Morikazu , Keiji Nomaru , Yoko Nishino
发明人: Hiroshi Morikazu , Keiji Nomaru , Yoko Nishino
IPC分类号: B23K26/00
CPC分类号: B23K26/3584 , B23K26/0613 , B23K26/0622 , B23K26/064 , B23K26/0648 , B23K26/0853 , B23K26/36 , B23K26/364 , B23K26/40 , B23K26/402 , B23K26/60 , B23K2101/40 , B23K2103/50 , H01L33/0095
摘要: A laser processing method of applying a pulsed laser beam to a workpiece formed from a transparent member, thereby performing laser processing to the workpiece. The laser processing method includes a first laser processing step of applying a first pulsed laser beam to a subject area of the workpiece to roughen the subject area and a second laser processing step of applying a second pulsed laser beam to the subject area roughened by the application of the first pulsed laser beam immediately after performing the first laser processing step, thereby forming a recess in the subject area. The first laser processing step and the second laser processing step are repeated to thereby form a continuous groove in the subject area.
摘要翻译: 一种将脉冲激光束施加到由透明构件形成的工件上的激光加工方法,从而对工件进行激光加工。 激光加工方法包括:第一激光加工步骤,将第一脉冲激光束施加到工件的主体区域以粗糙化对象区域;以及第二激光加工步骤,将第二脉冲激光束施加到由应用程序粗糙化的对象区域 在第一激光加工步骤之后立即进行第一脉冲激光束,从而在主体区域中形成凹陷。 重复第一激光加工步骤和第二激光加工步骤,从而在主体区域中形成连续的凹槽。
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公开(公告)号:US20120234809A1
公开(公告)日:2012-09-20
申请号:US13413827
申请日:2012-03-07
申请人: Hiroshi Morikazu , Yoko Nishino
发明人: Hiroshi Morikazu , Yoko Nishino
IPC分类号: B23K26/00
CPC分类号: B23K26/064 , B23K26/0624 , B23K26/40 , B23K26/402 , B23K2101/40 , B23K2103/50
摘要: A laser processing method for a nonlinear crystal substrate having a plurality of crossing division lines which includes the step of applying a pulsed laser beam to a work surface of the nonlinear crystal substrate along the division lines to thereby form a plurality of laser processed grooves on the work surface along the division lines. The pulse width of the pulsed laser beam is set to 200 ps or less and the repetition frequency of the pulsed laser beam is set to 50 kHz or less.
摘要翻译: 一种具有多个交叉分割线的非线性晶体基板的激光加工方法,其特征在于,包括:沿着分割线向所述非线性晶体基板的工作面施加脉冲激光束,从而在所述非线性晶体基板上形成多个激光加工槽 工作面沿分界线。 脉冲激光束的脉冲宽度设定为200ps以下,将脉冲激光束的重复频率设定为50kHz以下。
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公开(公告)号:US20120184084A1
公开(公告)日:2012-07-19
申请号:US13331554
申请日:2011-12-20
申请人: Hiroshi Morikazu , Yoko Nishino
发明人: Hiroshi Morikazu , Yoko Nishino
IPC分类号: H01L21/762
CPC分类号: H01L33/0079 , B23K26/364 , B23K26/40 , B23K26/57 , B23K2103/172
摘要: An optical device layer (ODL) in an optical device wafer is transferred to a transfer substrate. The ODL is formed on the front side of an epitaxy substrate through a buffer layer. The ODL is partitioned by a plurality of crossing streets to define regions where a plurality of optical devices are formed. The transfer substrate is bonded to the front side of the ODL, and the epitaxy substrate is cut along crossing streets into a plurality of blocks. A laser beam is applied to the epitaxy substrate from the back side of the epitaxy substrate to the unit of the optical device wafer and the transfer substrate in the condition where the focal point of the laser beam is set in the buffer layer, thereby decomposing the buffer layer. The epitaxy substrate divided into the plurality of blocks is peeled off from the ODL.
摘要翻译: 光学器件晶片中的光学器件层(ODL)被转移到转移衬底。 ODL通过缓冲层形成在外延基板的正面上。 ODL被多个交叉街道划分,以限定形成多个光学装置的区域。 转印衬底粘合到ODL的前侧,并且将外延衬底沿着交叉街道切割成多个块。 在激光束的焦点设置在缓冲层中的状态下,将激光束从外延基板的背面施加到外延基板的单元到光学器件晶片和转印基板的单元,从而分解 缓冲层。 被划分成多个块的外延衬底从ODL剥离。
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公开(公告)号:US08513566B2
公开(公告)日:2013-08-20
申请号:US11979936
申请日:2007-11-09
申请人: Hiroshi Morikazu , Keiji Nomaru
发明人: Hiroshi Morikazu , Keiji Nomaru
CPC分类号: B23K26/0853 , B23K26/067 , B23K26/0673 , B23K26/082 , B23K2101/40
摘要: A laser beam processing machine comprising a laser beam application means for applying a laser beam to a workpiece held on a chuck table and a processing-feed means, wherein the laser beam application means comprises a first pulse laser beam application means and a second pulse laser beam application means; the first pulse laser beam application means comprises an acousto-optic deflection means for deflecting the optical axis of a pulse laser beam oscillated by a first pulse laser beam oscillation means in the processing-feed direction (X direction), and a first condenser lens for converging a pulse laser beam passing through the acousto-optic deflection means; the second pulse laser beam application means comprises a second condenser lens for converging a pulse laser beam oscillated by the second pulse laser beam oscillation means; and an NA value of the first condenser lens is set smaller than the NA value of the second condenser lens.
摘要翻译: 一种激光束处理机,包括:激光束施加装置,用于将激光束施加到夹持在卡盘台上的工件;以及加工进给装置,其中所述激光束施加装置包括第一脉冲激光束施加装置和第二脉冲激光器 射束施加装置; 第一脉冲激光束施加装置包括用于使由第一脉冲激光束振荡装置在处理进给方向(X方向)上振荡的脉冲激光束的光轴偏转的声光偏转装置,以及用于 会聚通过声光偏转装置的脉冲激光束; 第二脉冲激光束施加装置包括用于会聚由第二脉冲激光束振荡装置振荡的脉冲激光束的第二聚光透镜; 并且将第一聚光透镜的NA值设定为小于第二聚光透镜的NA值。
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公开(公告)号:US07919725B2
公开(公告)日:2011-04-05
申请号:US11898505
申请日:2007-09-12
申请人: Hiroshi Morikazu
发明人: Hiroshi Morikazu
IPC分类号: B23K26/38
CPC分类号: H01L21/76898 , B23K26/082 , B23K26/0853 , B23K26/16 , B23K26/389 , B23K26/40 , B23K2101/40 , B23K2103/50 , H01L21/02057 , H01L2924/0002 , H01L2924/00
摘要: A method of forming a via hole reaching a bonding pad in a wafer having a plurality of devices on the front surface of a substrate and bonding pads on each of the devices, by applying a laser beam from the rear surface side of the substrate, comprising the steps of forming an annular groove by applying a laser beam to an annular area surrounding a via hole forming area on the rear surface of the substrate; and forming a via hole reaching a bonding pad by applying a laser beam to the via hole forming area surrounded by the annular groove from the rear surface side of the substrate.
摘要翻译: 一种通过从衬底的后表面侧施加激光束,形成通孔到达衬底的接合焊盘的方法,所述接合焊盘具有衬底前表面上的多个器件和每个器件上的接合焊盘,该激光束包括 通过将激光束施加到围绕基板后表面上的通孔形成区域的环形区域来形成环形槽的步骤; 以及通过将激光束从所述基板的后表面侧的所述环形槽包围的通路孔形成区域形成到达焊盘的通孔。
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