公开(公告)号：US20050081912A1

公开(公告)日：2005-04-21

申请号：US10959177

申请日：2004-10-07

申请人： Hiroshi Okura ,  Tohru Den ,  Kaoru Konakahara

发明人： Hiroshi Okura ,  Tohru Den ,  Kaoru Konakahara

IPC分类号： C30B29/62 ,  C01G9/02 ,  C25B1/00 ,  C25D9/04 ,  C30B7/12 ,  H01G9/20 ,  H01L31/04 ,  H01L51/00 ,  H01M14/00 ,  H01L31/00

CPC分类号： H01L51/4233 ,  C01G9/02 ,  C25B1/00 ,  C25D9/04 ,  H01G9/2027 ,  H01G9/2054 ,  H01L51/0086 ,  Y02E10/542 ,  Y02E10/549 ,  Y02P70/521

摘要： A process for producing a zinc oxide acicular structure by growing an acicular zinc oxide on a substrate, the process comprising the steps of holding the substrate in an electrolytic solution in which at least zinc ions are present, and forming zinc oxide on the substrate by electrodeposition. The electrolytic solution contains at least one cosolute. Also, disclosed is a photoelectric conversion device comprising a charge transport layer having the zinc oxide acicular structure.

摘要翻译： 一种通过在基材上生长针状氧化锌来生产氧化锌针状结构体的方法，该方法包括以下步骤：将基材保持在至少存在锌离子的电解液中，并通过电沉积在基材上形成氧化锌 。 电解液含有至少一种共溶剂。 另外，公开了包含具有氧化锌针状结构的电荷输送层的光电转换装置。

公开(公告)号：US06860982B2

公开(公告)日：2005-03-01

申请号：US10101462

申请日：2002-03-20

申请人： Hiroshi Okura ,  Tohru Den ,  Kaoru Konakahara

发明人： Hiroshi Okura ,  Tohru Den ,  Kaoru Konakahara

IPC分类号： C30B29/62 ,  C01G9/02 ,  C25B1/00 ,  C25D9/04 ,  C30B7/12 ,  H01G9/20 ,  H01L31/04 ,  H01L51/00 ,  H01M14/00

CPC分类号： H01L51/4233 ,  C01G9/02 ,  C25B1/00 ,  C25D9/04 ,  H01G9/2027 ,  H01G9/2054 ,  H01L51/0086 ,  Y02E10/542 ,  Y02E10/549 ,  Y02P70/521

摘要： A process for producing a zinc oxide acicular structure by growing an acicular zinc oxide on a substrate, the process comprising the steps of holding the substrate in an electrolytic solution in which at least zinc ions are present, and forming zinc oxide on the substrate by electrodeposition. The electrolytic solution contains at least one cosolute. Also disclosed is a photoelectric conversion device comprising a charge transport layer having the zinc oxide acicular structure.

摘要翻译： 一种通过在基材上生长针状氧化锌来生产氧化锌针状结构体的方法，该方法包括以下步骤：将基材保持在至少存在锌离子的电解液中，并通过电沉积在基材上形成氧化锌 。 电解液含有至少一种共溶剂。 还公开了包括具有氧化锌针状结构的电荷输送层的光电转换装置。

公开(公告)号：US06596078B2

公开(公告)日：2003-07-22

申请号：US09956021

申请日：2001-09-20

申请人： Kaoru Konakahara ,  Hiroshi Okura ,  Tohru Den

发明人： Kaoru Konakahara ,  Hiroshi Okura ,  Tohru Den

IPC分类号： C30B902

CPC分类号： H01G9/2027 ,  C30B23/007 ,  C30B29/16 ,  H01L31/1828 ,  Y02E10/542 ,  Y02E10/543 ,  Y02P70/521

摘要： A method of producing oxide whiskers is provided which comprises heating a source material comprised of a metal or an inorganic compound at a first temperature to be vaporized and depositing a crystal constitutive material vaporized from the source material on a substrate heated at a second temperature lower than the first temperature.

公开(公告)号：US20050062033A1

公开(公告)日：2005-03-24

申请号：US10912082

申请日：2004-08-06

申请人： Shigeru Ichihara ,  Kaoru Konakahara ,  Tohru Den ,  Kazuhiko Fukutani

发明人： Shigeru Ichihara ,  Kaoru Konakahara ,  Tohru Den ,  Kazuhiko Fukutani

IPC分类号： H01L29/06

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  H01L29/0673 ,  H01L29/0676 ,  Y10S977/72 ,  Y10S977/764 ,  Y10S977/778 ,  Y10S977/78 ,  Y10S977/782 ,  Y10S977/957

摘要： The invention provides a nanostructure including nanowires having very small diameters and integrated at a high density, and capable of being applied to still further high-functional devices. The invention provides a structure including a substrate or substrate having an underlayer, and a structure formed on the substrate or substrate having an underlayer, wherein the structure includes a columnar first part (part) and a second part (part) formed to surround the first part, and the second part comprises two or more types of materials capable of forming eutectic crystals, one type of the materials is a semiconductor material, and the height of the first part from the substrate is greater than the height of the second part from the substrate.

摘要翻译： 本发明提供纳米结构，其纳米线具有非常小的直径并且以高密度集成，并且能够应用于更多的高功能器件。 本发明提供一种结构，其包括具有底层的衬底或衬底，以及形成在具有底层的衬底或衬底上的结构，其中该结构包括柱状第一部分（部分）和第二部分（部分），该第二部分 第二部分包括能够形成共晶晶体的两种或更多种类型的材料，一种类型的材料是半导体材料，并且第一部分与基板的高度大于第二部分的高度 基质。

公开(公告)号：US07545010B2

公开(公告)日：2009-06-09

申请号：US10912082

申请日：2004-08-06

申请人： Shigeru Ichihara ,  Kaoru Konakahara ,  Tohru Den ,  Kazuhiko Fukutani

发明人： Shigeru Ichihara ,  Kaoru Konakahara ,  Tohru Den ,  Kazuhiko Fukutani

IPC分类号： H01L29/43

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  H01L29/0673 ,  H01L29/0676 ,  Y10S977/72 ,  Y10S977/764 ,  Y10S977/778 ,  Y10S977/78 ,  Y10S977/782 ,  Y10S977/957

摘要： The invention provides a nanostructure including nanowires having very small diameters and integrated at a high density, and capable of being applied to still further high-functional devices.The invention provides a structure including a substrate or substrate having an underlayer, and a structure formed on the substrate or substrate having an underlayer, wherein the structure includes a columnar first part (part) and a second part (part) formed to surround the first part, and the second part comprises two or more types of materials capable of forming eutectic crystals, one type of the materials is a semiconductor material, and the height of the first part from the substrate is greater than the height of the second part from the substrate.

摘要翻译： 本发明提供纳米结构，其纳米线具有非常小的直径并且以高密度集成，并且能够应用于更多的高功能器件。 本发明提供一种结构，其包括具有底层的衬底或衬底，以及形成在具有底层的衬底或衬底上的结构，其中该结构包括柱状第一部分（部分）和第二部分（部分），该第二部分 第二部分包括能够形成共晶晶体的两种或更多种类型的材料，一种类型的材料是半导体材料，并且第一部分与基板的高度大于第二部分的高度 基质。

公开(公告)号：US07183127B2

公开(公告)日：2007-02-27

申请号：US10735062

申请日：2003-12-11

申请人： Akira Kuriyama ,  Hirokatsu Miyata ,  Albrecht Otto ,  Miki Ogawa ,  Hiroshi Okura ,  Kazuhiko Fukutani ,  Tohru Den

发明人： Akira Kuriyama ,  Hirokatsu Miyata ,  Albrecht Otto ,  Miki Ogawa ,  Hiroshi Okura ,  Kazuhiko Fukutani ,  Tohru Den

IPC分类号： H01L21/00

CPC分类号： H01L33/08 ,  B82Y20/00 ,  G02B6/1225 ,  H01L27/146 ,  H01L27/148 ,  H01L27/153 ,  H01L31/035281 ,  H01L31/103 ,  H01L31/105 ,  H01L33/18 ,  Y02E10/50

摘要： A semiconductor device array comprising highly densely arranged nano-size semiconductor devices is prepared by a simple method. The array comprises a porous body having cylinder-shaped pores formed by removing cylinder-shaped regions from a structure that includes a matrix member formed so as to contain silicon or germanium and the cylinder-shaped regions containing aluminum and dispersed in the matrix member, semiconductor regions formed in the pores, each having at least a p-n or p-i-n junction, and a pair or electrodes, arranged respectively on the top and at the bottom of the semiconductor regions. The semiconductor regions and the pair of electrodes form a plurality of semiconductor devices on a substrate.

摘要翻译： 通过简单的方法制备包括高密度排列的纳米尺寸半导体器件的半导体器件阵列。 该阵列包括多孔体，该多孔体具有通过从包括形成为包含硅或锗的矩阵构件和包含铝并分散在基体构件中的圆柱形区域的结构中去除圆柱形区域而形成的圆柱形孔，半导体 形成在孔中的各自具有至少pn或pin结的孔，以及分别布置在半导体区域的顶部和底部的一对或多个电极。 半导体区域和一对电极在基板上形成多个半导体器件。

公开(公告)号：US07892979B2

公开(公告)日：2011-02-22

申请号：US12119739

申请日：2008-05-13

申请人： Miki Ogawa ,  Hirokatsu Miyata ,  Albrecht Otto ,  Akira Kuriyama ,  Hiroshi Okura ,  Tohru Den ,  Kazuhiko Fukutani

发明人： Miki Ogawa ,  Hirokatsu Miyata ,  Albrecht Otto ,  Akira Kuriyama ,  Hiroshi Okura ,  Tohru Den ,  Kazuhiko Fukutani

IPC分类号： H01L21/461 ,  H01L21/302

CPC分类号： C23C14/5873 ,  B82Y10/00 ,  B82Y30/00 ,  C23C14/165 ,  H01L21/0331 ,  H01L21/0337 ,  H01L21/3086 ,  H01L21/32051 ,  H01L29/0657

摘要： A method of manufacturing a dot pattern includes the steps of preparing a structured material composed of a plurality of columnar members containing a first component and a region containing a second component different from the first component surrounding the columnar members, with the structured material being formed by depositing the first component and the second component on a substrate, and removing the columnar members from the structured material to form a porous material having a columnar hole. In addition, a material is introduced into the columnar hole portions of the porous material to form a dot pattern, and the porous material is removed.

摘要翻译： 制造点阵图形的方法包括以下步骤：制备由包含第一组分的多个柱状构件构成的结构材料和包含不同于围绕柱状构件的第一组分的第二组分的区域，其结构材料由 将第一组分和第二组分沉积在基底上，并从结构化材料中除去柱状构件以形成具有柱状孔的多孔材料。 此外，将材料引入到多孔材料的柱状孔部分中以形成点图案，并且去除多孔材料。

公开(公告)号：US08435899B2

公开(公告)日：2013-05-07

申请号：US12555195

申请日：2009-09-08

申请人： Hirokatsu Miyata ,  Albrecht Otto ,  Akira Kuriyama ,  Miki Ogawa ,  Hiroshi Okura ,  Kazuhiko Fukutani ,  Tohru Den

发明人： Hirokatsu Miyata ,  Albrecht Otto ,  Akira Kuriyama ,  Miki Ogawa ,  Hiroshi Okura ,  Kazuhiko Fukutani ,  Tohru Den

IPC分类号： H01L21/311

CPC分类号： C30B7/00 ,  C30B7/005 ,  C30B29/605

摘要： A microcolumnar structured material having a desired material. The columnar structured material includes columnar members obtained by introducing a filler into columnar holes formed in a porous material. The porous material has the columnar holes formed by removing columnar substances from a structured material in which the columnar substances containing a first component are dispersed in a matrix member containing a second component capable of forming a eutectic with the first component. The matrix member may be removed. In the columnar structured material, the filler is a conductive material, and an electrode can be structured by electrically connecting the conductive materials in at least a part of a plurality of holes to a conductor.

摘要翻译： 具有所需材料的微柱结构材料。 柱状结构材料包括通过将填料引入形成在多孔材料中的柱状孔中获得的柱状构件。 多孔材料具有通过从其中含有第一成分的柱状物质分散在含有能够与第一成分形成共晶的第二成分的基质成分的结构化材料中除去柱状物质而形成的柱状孔。 可以去除矩阵构件。 在柱状结构材料中，填料是导电材料，并且电极可以通过将多个孔的至少一部分中的导电材料电连接到导体来构造。

公开(公告)号：US20080223824A1

公开(公告)日：2008-09-18

申请号：US12119739

申请日：2008-05-13

申请人： Miki Ogawa ,  Hirokatsu Miyata ,  Albrecht Otto ,  Akira Kuriyama ,  Hiroshi Okura ,  Tohru Den ,  Kazuhiko Fukutani

发明人： Miki Ogawa ,  Hirokatsu Miyata ,  Albrecht Otto ,  Akira Kuriyama ,  Hiroshi Okura ,  Tohru Den ,  Kazuhiko Fukutani

IPC分类号： B44C1/22 ,  B05D5/00 ,  C25D5/00 ,  C23C14/00

CPC分类号： C23C14/5873 ,  B82Y10/00 ,  B82Y30/00 ,  C23C14/165 ,  H01L21/0331 ,  H01L21/0337 ,  H01L21/3086 ,  H01L21/32051 ,  H01L29/0657

摘要： A method of manufacturing a dot pattern includes the steps of preparing a structured material composed of a plurality of columnar members containing a first component and a region containing a second component different from the first component surrounding the columnar members, with the structured material being formed by depositing the first component and the second component on a substrate, and removing the columnar members from the structured material to form a porous material having a columnar hole. In addition, a material is introduced into the columnar hole portions of the porous material to form a dot pattern, and the porous material is removed.

摘要翻译： 制造点阵图形的方法包括以下步骤：制备由包含第一组分的多个柱状构件构成的结构材料和包含不同于围绕柱状构件的第一组分的第二组分的区域，其中结构材料由 将第一组分和第二组分沉积在基底上，并从结构化材料中除去柱状构件以形成具有柱状孔的多孔材料。 此外，将材料引入到多孔材料的柱状孔部分中以形成点图案，并且去除多孔材料。

公开(公告)号：US07387967B2

公开(公告)日：2008-06-17

申请号：US10535452

申请日：2003-12-12

申请人： Miki Ogawa ,  Hirokatsu Miyata ,  Albrecht Otto ,  Akira Kuriyama ,  Hiroshi Okura ,  Tohru Den ,  Kazuhiko Fukutani

发明人： Miki Ogawa ,  Hirokatsu Miyata ,  Albrecht Otto ,  Akira Kuriyama ,  Hiroshi Okura ,  Tohru Den ,  Kazuhiko Fukutani

IPC分类号： H01L21/461 ,  H01L21/302

CPC分类号： C23C14/5873 ,  B82Y10/00 ,  B82Y30/00 ,  C23C14/165 ,  H01L21/0331 ,  H01L21/0337 ,  H01L21/3086 ,  H01L21/32051 ,  H01L29/0657

摘要： A method of manufacturing a dot pattern includes the steps of preparing a structured material composed of a plurality of columnar members containing a first component and a region containing a second component different from the first component surrounding the columnar members, with the structured material being formed by depositing the first component and the second component on a substrate, and removing the columnar members from the structured material to form a porous material having a columnar hole. Additional steps include introducing a mask material into the columnar hole of the porous material to form a dot pattern, and removing the porous material.

摘要翻译： 制造点阵图形的方法包括以下步骤：制备由包含第一组分的多个柱状构件构成的结构材料和包含不同于围绕柱状构件的第一组分的第二组分的区域，其结构材料由 将第一组分和第二组分沉积在基底上，并从结构化材料中除去柱状构件以形成具有柱状孔的多孔材料。 附加步骤包括将掩模材料引入到多孔材料的柱状孔中以形成点图案，并且去除多孔材料。