摘要:
Nitrobenzenes are prepared by nitrating benzenes in a vapor phase with dilute or concentrated nitric acid wherein the following (A) or (B) is used as a catalyst:(A) acidic sheet clay minerals ion-exchanged with polyvalent metals, or(B) acidic composite oxides comprising oxides of metals belonging to Group IVA of the Mendeleefs' periodic table and tungsten oxide, molybdenum oxide, niobium oxide or zinc oxide.These catalysts have high catalyst activity and selectivity for vapor phase nitration reaction of benzenes with nitric acid and besides the activity is retained for a long time.
摘要:
Nitrobenzenes are prepared by nitrating benzenes in vapor phase using nitric acid as a nitrating agent and under continuous or intermittent feeding of sulfuric acid as a catalyst in the presence of a catalyst comprising sulfuric acid supported on a carrier or in the presence of only a carrier. This process can provide very high and prolonged nitration activity.
摘要:
A process for producing an amide which comprises subjecting an oxime to liquid phase rearrangement in the presence of phosphorus pentoxide and at least one compound selected from the group consisting of N,N-dialkyl amides, N-alkyl cyclic amides and dialkyl sulfoxides and optionally a fluorine-containing strong said or its derivative. Said process can rearrange an oxime to a corresponding amide in a good yield under mild reaction conditions in the presence of a less stoichiometric amount of a catalyst.
摘要:
Disclosed is a process for producing an organic carboxylic acid ester from an organic carboxylic acid corresponding to said organic carboxylic acid ester and an alcohol by esterification reaction in gas phase which comprises carrying out the reaction with continuously or intermittently feeding sulfuric acid as a catalyst component in the presence of a catalyst carrier. The sulfuric acid may be previously supported on the catalyst carrier.
摘要:
A semiconductor film manufacturing method includes: forming a metal layer above the substrate; forming a gate electrode in each of pixels by patterning a metal layer; forming a gate insulating firm on the gate electrode; forming an amorphous semiconductor film on the gate insulating film; and crystallizing the amorphous semiconductor film by irradiating the amorphous semiconductor film with a laser beam, and a laser irradiation width of the laser beam corresponds to n times a width of each pixel (n is an integer of 2 or above), a laser energy intensity is higher in one end portion of the laser irradiation width than in the other end portion, and in the crystallizing, the laser energy intensity of the laser beam is inverted in increments of n pixels, alternately between one of the end portions of the laser irradiation width of the laser beam and the other end portion.
摘要:
An electronic component package has a first sealing member main surface with mounted electronic element, and a second sealing member. An outer circumference portion of a second sealing member is molded into a tapered shape, providing a tapered area in at least part of the outer circumference. A flat area adjacent to the tapered area is provided in at least part of a flat portion inward of the outer circumference portion of the surface of the second sealing member. A first area corresponding to the tapered area and a second area corresponding to the flat area are provided adjacent to each other on a first main surface of the first sealing member with mounted electronic component element. A width W2 of the second area is 0.66 to 1.2 times a width W4 of the flat area. First and second bonding layers are formed and bonded with each other by heating.
摘要:
A solid-state imaging device includes a first substrate including a light-sensing portion configured to perform photoelectric conversion of incident light and a wiring portion provided on a light-incident side; an optically transparent second substrate provided on a wiring portion side of the first substrate at a certain distance; a through-hole provided in the first substrate; a through-via provided in the through-hole; a front-surface-side electrode connected to the through-via and provided on a front surface of the first substrate; a back-surface-side electrode connected to the through-via and provided on a back surface of the first substrate; and a stopper electrode provided on the front-surface-side electrode and filling a space between the front-surface-side electrode and the second substrate.
摘要:
A solid-state imaging device includes a first substrate including a light-sensing portion configured to perform photoelectric conversion of incident light and a wiring portion provided on a light-incident side; an optically transparent second substrate provided on a wiring portion side of the first substrate at a certain distance; a through-hole provided in the first substrate; a through-via provided in the through-hole; a front-surface-side electrode connected to the through-via and provided on a front surface of the first substrate; a back-surface-side electrode connected to the through-via and provided on a back surface of the first substrate; and a stopper electrode provided on the front-surface-side electrode and filling a space between the front-surface-side electrode and the second substrate.
摘要:
A process for forming a resist pattern according to the invention is a process for forming a resist pattern in which a photoresist is coated on a first substrate, the coated photoresist is exposed to light of a predetermined pattern, and afterwards developing is performed, wherein in at least one of the processes of coating, exposing, and developing, whenever lots to which the first substrate belongs change, the atmosphere residing in the lot is changed.
摘要:
A fuel supply system includes: a flange mounted at an upper opening in a fuel tank; a fuel pump that discharges fuel in the fuel tank; a high-pressure filter that filters fuel discharged from the fuel pump; and a filter case that accommodates the high-pressure filter and includes an upper case and a lower case, the upper case integrally formed with the flange. The fuel pump is fitted to an underside of the lower case to be positioned substantially coaxial with the high-pressure filter.