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公开(公告)号：US20110230054A1
公开(公告)日：2011-09-22
申请号：US12841217
申请日：2010-07-22
IPC分类号： H01L21/3205 , B08B3/08 , B08B3/12
CPC分类号： H01L21/02052 , H01L21/02057
摘要： In one embodiment, a semiconductor substrate cleaning method is disclosed. The method can clean a semiconductor substrate by using a chemical of 80° C. or above. The method can rinse the semiconductor substrate by using pure water of 40° C. or above after the cleaning of the semiconductor substrate. The method can then rinse the semiconductor substrate by using pure water of 30° C. or below. In addition, the method can dry the semiconductor substrate.
摘要翻译： 在一个实施例中，公开了半导体衬底清洗方法。 该方法可以使用80℃以上的化学物质来清洗半导体衬底。 该方法可以在清洁半导体衬底之后使用40℃以上的纯水冲洗半导体衬底。 然后，该方法可以通过使用30℃或更低的纯水冲洗半导体衬底。 此外，该方法可以干燥半导体衬底。
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公开(公告)号：US20130154087A1
公开(公告)日：2013-06-20
申请号：US13526216
申请日：2012-06-18
IPC分类号： H01L21/768 , H01L23/535
CPC分类号： C23C18/1608 , C23C18/1893 , C23C18/32 , H01L21/4846 , H01L21/76874 , H01L21/76879 , H01L21/76885 , H01L28/91
摘要： According to one embodiment, a method for forming an interconnection pattern includes forming an insulating pattern, forming a self-assembled film, and forming a conductive layer. The insulating pattern has a side surface on a major surface of a matrix. The self-assembled film has an affinity with a material of the insulating pattern on the side surface of the insulating pattern. The forming the conductive layer includes depositing a conductive material on a side surface of the self-assembled film.
摘要翻译： 根据一个实施例，用于形成互连图案的方法包括形成绝缘图案，形成自组装膜并形成导电层。 绝缘图案在矩阵的主表面上具有侧表面。 自组装膜与绝缘图案的侧面上的绝缘图案的材料具有亲和性。 形成导电层包括在自组装膜的侧表面上沉积导电材料。
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公开(公告)号：US20130037055A1
公开(公告)日：2013-02-14
申请号：US13422771
申请日：2012-03-16
CPC分类号： A46B13/02 , A46B13/001 , A46B2200/30 , H01L21/67046 , H01L21/67754
摘要： Transferring plural semiconductor substrates under a state being held with predetermined intervals; holding the plural semiconductor substrates with roll brushes provided in plural pieces by each front side and back side of the plural semiconductor substrates, longitudinal directions of the roll brushes being oriented in parallel relative to the front side and the back side; and cleaning the plural semiconductor substrates by rotating the plural roll brushes.
摘要翻译： 在保持预定间隔的状态下转移多个半导体衬底; 通过多个半导体衬底的每个前侧和后侧保持多个具有多个片材的辊刷的半导体衬底，辊刷的纵向方向相对于前侧和后侧平行取向; 以及通过旋转所述多个辊刷来清洁所述多个半导体衬底。
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公开(公告)号：US08772164B2
公开(公告)日：2014-07-08
申请号：US13526216
申请日：2012-06-18
IPC分类号： H01L21/44
CPC分类号： C23C18/1608 , C23C18/1893 , C23C18/32 , H01L21/4846 , H01L21/76874 , H01L21/76879 , H01L21/76885 , H01L28/91
摘要： According to one embodiment, a method for forming an interconnection pattern includes forming an insulating pattern, forming a self-assembled film, and forming a conductive layer. The insulating pattern has a side surface on a major surface of a matrix. The self-assembled film has an affinity with a material of the insulating pattern on the side surface of the insulating pattern. The forming the conductive layer includes depositing a conductive material on a side surface of the self-assembled film.
摘要翻译： 根据一个实施例，用于形成互连图案的方法包括形成绝缘图案，形成自组装膜并形成导电层。 绝缘图案在矩阵的主表面上具有侧表面。 自组装膜与绝缘图案的侧面上的绝缘图案的材料具有亲和性。 形成导电层包括在自组装膜的侧表面上沉积导电材料。
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公开(公告)号：US08741168B2
公开(公告)日：2014-06-03
申请号：US13424904
申请日：2012-03-20
IPC分类号： C03C15/00
CPC分类号： H01L21/31111 , H01L21/31144
摘要： According to one embodiment, an etching method includes: supplying an etching-resistant material; and etching the silicon nitride film. The supplying includes supplying the etching-resistant material to a processing surface including a surface of a silicon nitride film and a surface of a non-etching film, the non-etching film including a material different from the silicon nitride film. The etching includes etching the silicon nitride film using an etchant in a state of the etching-resistant material being formed relatively more densely on the surface of the non-etching film than on the surface of the silicon nitride film.
摘要翻译： 根据一个实施例，蚀刻方法包括：提供耐蚀刻材料; 并蚀刻氮化硅膜。 供给包括将耐蚀刻材料供给到包括氮化硅膜的表面和非蚀刻膜的表面的处理表面，非蚀刻膜包括不同于氮化硅膜的材料。 蚀刻包括在耐腐蚀材料的状态下使用蚀刻剂在非蚀刻膜的表面上比在氮化硅膜的表面上相对更密集地形成的蚀刻氮化硅膜。
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公开(公告)号：US08695145B2
公开(公告)日：2014-04-15
申请号：US13422771
申请日：2012-03-16
IPC分类号： B08B11/00 , H01L21/304
CPC分类号： A46B13/02 , A46B13/001 , A46B2200/30 , H01L21/67046 , H01L21/67754
摘要： Transferring plural semiconductor substrates under a state being held with predetermined intervals; holding the plural semiconductor substrates with roll brushes provided in plural pieces by each front side and back side of the plural semiconductor substrates, longitudinal directions of the roll brushes being oriented in parallel relative to the front side and the back side; and cleaning the plural semiconductor substrates by rotating the plural roll brushes.
摘要翻译： 在保持预定间隔的状态下转移多个半导体衬底; 通过多个半导体衬底的每个前侧和后侧保持多个具有多个片材的辊刷的半导体衬底，辊刷的纵向方向相对于前侧和后侧平行取向; 以及通过旋转所述多个辊刷来清洁所述多个半导体衬底。
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公开(公告)号：US20130065400A1
公开(公告)日：2013-03-14
申请号：US13424904
申请日：2012-03-20
IPC分类号： H01L21/306
CPC分类号： H01L21/31111 , H01L21/31144
摘要： According to one embodiment, an etching method includes: supplying an etching-resistant material; and etching the silicon nitride film. The supplying includes supplying the etching-resistant material to a processing surface including a surface of a silicon nitride film and a surface of a non-etching film, the non-etching film including a material different from the silicon nitride film. The etching includes etching the silicon nitride film using an etchant in a state of the etching-resistant material being formed relatively more densely on the surface of the non-etching film than on the surface of the silicon nitride film.
摘要翻译： 根据一个实施例，蚀刻方法包括：提供耐蚀刻材料; 并蚀刻氮化硅膜。 供给包括将耐蚀刻材料供给到包括氮化硅膜的表面和非蚀刻膜的表面的处理表面，非蚀刻膜包括不同于氮化硅膜的材料。 蚀刻包括在耐腐蚀材料的状态下使用蚀刻剂在非蚀刻膜的表面上比在氮化硅膜的表面上相对更密集地形成的蚀刻氮化硅膜。
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8.发明授权Supercritical drying method for semiconductor substrate and supercritical drying apparatus 有权半导体衬底超临界干燥方法及超临界干燥装置公开(公告)号：US08771429B2
公开(公告)日：2014-07-08
申请号：US13420870
申请日：2012-03-15
申请人： Linan Ji , Hidekazu Hayashi , Hiroshi Tomita , Hisashi Okuchi , Yohei Sato , Takayuki Toshima , Mitsuaki Iwashita , Kazuyuki Mitsuoka , Gen You , Hiroki Ohno , Takehiko Orii
发明人： Linan Ji , Hidekazu Hayashi , Hiroshi Tomita , Hisashi Okuchi , Yohei Sato , Takayuki Toshima , Mitsuaki Iwashita , Kazuyuki Mitsuoka , Gen You , Hiroki Ohno , Takehiko Orii
IPC分类号： B08B7/00
CPC分类号： H01L21/02 , F26B21/10 , F26B21/14 , F26B23/028 , F26B2200/04 , H01L21/02052 , H01L21/02057 , H01L21/02101 , H01L21/67034
摘要： According to one embodiment, a supercritical drying method for a semiconductor substrate, comprises introducing the semiconductor substrate into a chamber in a state, a surface of the semiconductor substrate being wet with alcohol, substituting the alcohol on the semiconductor substrate with a supercritical fluid of carbon dioxide by impregnating the semiconductor substrate to the supercritical fluid in the chamber, and discharging the supercritical fluid and the alcohol from the chamber and reducing a pressure inside the chamber. The method further comprises performing a baking treatment by supplying an oxygen gas or an ozone gas to the chamber after the reduction of the pressure inside the chamber.
摘要翻译： 根据一个实施方案，一种用于半导体衬底的超临界干燥方法包括将半导体衬底以一种状态将半导体衬底引入室中，该半导体衬底的表面被醇润湿，用半导体衬底上的醇代替超临界流体碳 通过将半导体衬底浸渍到腔室中的超临界流体中，并且将超临界流体和醇从腔室排出并且减小腔室内的压力，从而将二氧化碳稀释。 该方法还包括在减小室内的压力之后，通过向室内供应氧气或臭氧气体进行烘烤处理。
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公开(公告)号：US20110220152A1
公开(公告)日：2011-09-15
申请号：US12963952
申请日：2010-12-09
CPC分类号： F26B3/00 , H01L21/67028 , H01L21/67034
摘要： According to one embodiment, a substrate having a plurality of adjacent patterns on one surface thereof is cleaned by cleaning liquid. Subsequently, after the cleaning liquid is displaced with pure water, the pure water is displaced with displacement liquid. Under a condition that the displacement liquid among the patterns does not vaporize, the displacement liquid not contributing to prevention of collapse of the patterns is removed. After the displacement liquid is removed, the substrate is held in supercritical fluid and the displacement liquid among the patterns is displaced with the supercritical fluid. After the displacement liquid among the patterns is displaced with the supercritical fluid, the supercritical fluid adhering to the substrate is vaporized.
摘要翻译： 根据一个实施例，在其一个表面上具有多个相邻图案的基板通过清洗液体被清洁。 随后，在用纯水置换清洗液之后，用置换液体移动纯水。 在图案中的位移液不会蒸发的条件下，不利于防止图案塌陷的位移液被去除。 在取出置换液后，将基板保持在超临界流体中，并且图案中的置换液体与超临界流体一起移位。 在图案中的位移液体被超临界流体置换之后，附着在基板上的超临界流体被蒸发。
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公开(公告)号：US09437416B2
公开(公告)日：2016-09-06
申请号：US13231956
申请日：2011-09-13
CPC分类号： H01L21/02101 , H01L21/02068 , H01L21/67017 , H01L21/67034
摘要： According to one embodiment, a supercritical drying method for a semiconductor substrate includes introducing a semiconductor substrate formed with a metal film into a chamber, the surface of the substrate being wet with alcohol, supplying a supercritical fluid of carbon dioxide into the chamber, setting a temperature inside the chamber to a predetermined temperature, to replace the alcohol on the semiconductor substrate with the supercritical fluid, and discharging the supercritical fluid and the alcohol from the chamber while keeping the temperature inside the chamber at the predetermined temperature, to lower a pressure inside the chamber. The predetermined temperature is not lower than 75° C. but lower than a critical temperature of the alcohol.
摘要翻译： 根据一个实施例，半导体衬底的超临界干燥方法包括将形成有金属膜的半导体衬底引入腔室中，基底表面被醇润湿，将二氧化碳的超临界流体供应到腔室中， 在室内温度达到预定温度，用超临界流体替代半导体衬底上的醇，并且将超临界流体和醇从室中排出，同时将室内的温度保持在预定温度，以降低内部的压力 房间。 预定温度不低于75℃，但低于醇的临界温度。
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