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    METHOD OF PROCESSING SILICON AND GLASS SUBSTRATES USING A LASER PEELING TECHNIQUE
    5.
    发明申请
    METHOD OF PROCESSING SILICON AND GLASS SUBSTRATES USING A LASER PEELING TECHNIQUE 失效
    使用激光剥离技术处理硅和玻璃基板的方法

    公开(公告)号：US20130252421A1

    公开(公告)日：2013-09-26

    申请号：US13607381

    申请日：2012-09-07

    申请人： Atsuko Sakata ,  Kazuyuki Higashi ,  Akiko Nomachi ,  Takeshi Ishizaki

    发明人： Atsuko Sakata ,  Kazuyuki Higashi ,  Akiko Nomachi ,  Takeshi Ishizaki

    IPC分类号： H01L21/768

    CPC分类号： H01L21/76877 ,  H01L21/6835 ,  H01L21/76898 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68386

    摘要： According to one embodiment, a method of manufacturing a semiconductor device including forming a metal film on aback surface of a glass substrate which supports a semiconductor substrate on a front surface thereof; forming a metal oxide film by oxidizing the whole or at least a portion of the metal film from the front surface; forming protective film, such as silicon nitride, on the metal oxide film; holding the front surface of the protective film with an electrostatic chuck; and forming a via for electrical connection in the semiconductor substrate while the front surface of the protective film is in contact with by the electrostatic chuck; then using a laser to delaminate the glass substrate from the semiconductor substrate.

    摘要翻译： 根据一个实施例，一种制造半导体器件的方法，包括在其表面上支撑半导体衬底的玻璃衬底的表面上形成金属膜; 通过从前表面氧化整个或至少一部分金属膜来形成金属氧化物膜; 在金属氧化物膜上形成诸如氮化硅的保护膜; 用静电卡盘保持保护膜的前表面; 并且在保护膜的前表面通过静电卡盘接触的同时，在半导体衬底中形成用于电连接的通孔; 然后使用激光将玻璃衬底从半导体衬底分层。

    Semiconductor device
    6.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US08482126B2

    公开(公告)日：2013-07-09

    申请号：US13224929

    申请日：2011-09-02

    申请人： Makoto Wada ,  Yuichi Yamazaki ,  Akihiro Kajita ,  Atsuko Sakata

    发明人： Makoto Wada ,  Yuichi Yamazaki ,  Akihiro Kajita ,  Atsuko Sakata

    IPC分类号： H01L23/52 ,  H01L23/48 ,  H01L23/532

    CPC分类号： H01L23/53276 ,  H01L21/28556 ,  H01L21/76805 ,  H01L21/76852 ,  H01L21/76856 ,  H01L21/76876 ,  H01L21/76885 ,  H01L23/5226 ,  H01L2924/0002 ,  H01L2924/00

    摘要： According to an embodiment of the present invention, a device includes a substrate, a base body formed on or above the substrate, and a pair of wirings. The base body has a line shape in a plan view and extends along a length direction. The pair of wirings includes first and second catalyst layers formed on both side surfaces of the base body in the length direction of the base body with sandwiching the base body; and first and second graphene layers formed on both side surfaces of the base body in a manner of contacting the first and second catalyst layers, respectively, and extending along the length direction of the base body, the graphene layers includes a plurality of graphenes laminated perpendicularly with respect to both side surfaces of the base body, respectively.

    摘要翻译： 根据本发明的实施例，一种装置包括基板，形成在基板上或上方的基体，以及一对布线。 基体在平面图中具有线状并沿长度方向延伸。 一对配线包括在基体的长度方向上形成在基体的两侧面上的第一和第二催化剂层，夹着基体; 以及分别以与基体的长度方向接触的方式形成在基体的两侧面上的第一和第二石墨烯层，所述石墨烯层包括垂直层叠的多个石墨烯层 分别相对于基体的两个侧面。