公开(公告)号：US07482694B2

公开(公告)日：2009-01-27

申请号：US10509898

申请日：2003-03-31

申请人： Hiroto Ohtake ,  Munehiro Tada ,  Yoshimichi Harada ,  Ken′ichiro Hijioka ,  Shinobu Saitoh ,  Yoshihiro Hayashi

发明人： Hiroto Ohtake ,  Munehiro Tada ,  Yoshimichi Harada ,  Ken′ichiro Hijioka ,  Shinobu Saitoh ,  Yoshihiro Hayashi

IPC分类号： H01L23/522

CPC分类号： H01L21/76831 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/76801 ,  H01L21/76808 ,  H01L21/76811 ,  H01L21/76813

摘要： A technique is provided for protecting an interlayer insulating film formed of an organic low dielectric constant material from any damage applied in a semiconductor process, and for attaining the decrease leak current in the interlayer insulating film, resulting in the improvement of reliability of a semiconductor device. The semiconductor device according to the present invention has an organic insulating films having openings. The organic insulating films have modified portions facing the openings. The modified portions contains fluorine atoms and nitrogen atoms. The concentration of the fluorine atoms in the modified portions is lower than the concentration of the nitrogen atoms. The above-mentioned modified layers protect the semiconductor device from the damage applied in the semiconductor process, while suppressing the corrosion of the conductors embedded in the openings.

摘要翻译： 提供了一种用于保护由有机低介电常数材料形成的层间绝缘膜的技术，用于在半导体工艺中施加的任何损坏，并且为了获得在层间绝缘膜中的减小的漏电流，从而提高半导体器件的可靠性 。 根据本发明的半导体器件具有具有开口的有机绝缘膜。 有机绝缘膜具有面向开口的改性部分。 改性部分含有氟原子和氮原子。 改性部分中的氟原子的浓度低于氮原子的浓度。 上述改性层保护半导体器件免受在半导体工艺中的损坏，同时抑制嵌入在开口中的导体的腐蚀。

公开(公告)号：US20050253272A1

公开(公告)日：2005-11-17

申请号：US10509898

申请日：2003-03-31

申请人： Hiroto Ohtake ,  Munehiro Tada ,  Yoshimichi Harada ,  Ken'ichiro Hijioka ,  Shinobu Saitoh ,  Yoshihiro Hayashi

发明人： Hiroto Ohtake ,  Munehiro Tada ,  Yoshimichi Harada ,  Ken'ichiro Hijioka ,  Shinobu Saitoh ,  Yoshihiro Hayashi

IPC分类号： H01L21/311 ,  H01L21/768 ,  H01L21/4763

CPC分类号： H01L21/76831 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/76801 ,  H01L21/76808 ,  H01L21/76811 ,  H01L21/76813

摘要： A technique is provided for protecting an interlayer insulating film formed of an organic low dielectric constant material from any damage applied in a semiconductor process, and for attaining the decrease leak current in the interlayer insulating film, resulting in the improvement of reliability of a semiconductor device. The semiconductor device according to the present invention has an organic insulating films (5, 26, 28) having openings. The organic insulating films (5, 26, 28) have modified portions (5a, 26a, 28a) facing the openings. The modified portions (5a, 26a, 28a) contains fluorine atoms and nitrogen atoms. The concentration of the fluorine atoms in the modified portions (5a, 26a, 28a) is lower than the concentration of the nitrogen atoms. The above-mentioned modified layers (5a, 26a, 28a) protect the semiconductor device from the damage applied in the semiconductor process, while suppressing the corrosion of the conductors embedded in the openings.

摘要翻译： 提供了一种用于保护由有机低介电常数材料形成的层间绝缘膜的技术，用于在半导体工艺中施加的任何损坏，并且为了获得在层间绝缘膜中的减小的漏电流，从而提高半导体器件的可靠性 。 根据本发明的半导体器件具有具有开口的有机绝缘膜（5,26,28）。 有机绝缘膜（5,26,28）具有面向开口的变形部分（5a，26a，28a）。 改性部分（5a，26a，28a）含有氟原子和氮原子。 改性部分（5a，26a，28a）中氟原子的浓度低于氮原子的浓度。 上述改性层（5a，26a，28a）保护半导体器件免受在半导体工艺中的损坏，同时抑制嵌入在开口中的导体的腐蚀。

公开(公告)号：US06972453B2

公开(公告)日：2005-12-06

申请号：US10080848

申请日：2002-02-22

申请人： Hiroto Ohtake ,  Shinobu Saitoh ,  Munehiro Tada ,  Yoshihiro Hayashi

发明人： Hiroto Ohtake ,  Shinobu Saitoh ,  Munehiro Tada ,  Yoshihiro Hayashi

IPC分类号： H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  H01L21/311 ,  H01L21/312 ,  H01L21/768 ,  H01L23/522 ,  H01L29/76

CPC分类号： H01L21/022 ,  H01L21/02118 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/31138 ,  H01L21/312 ,  H01L21/3122 ,  H01L21/3127 ,  H01L21/76802 ,  H01L21/76832

摘要： In a method of manufacturing a semiconductor device, with respect to a stacked film including a silicon included organic film and a silicon non-included organic film, the silicon non-included organic film is etched by using the etching gas of mixed N2 gas and H2 gas.

摘要翻译： 在制造半导体器件的方法中，对于包含硅的有机膜和未包含硅的有机膜的叠层膜，通过使用混合的N 2气体的蚀刻气体和H 2 加油站。

公开(公告)号：US6100201A

公开(公告)日：2000-08-08

申请号：US33912

申请日：1998-03-03

申请人： Yukihiko Maejima ,  Jun Kawahara ,  Shinobu Saitoh ,  Yoshihiro Hayashi

发明人： Yukihiko Maejima ,  Jun Kawahara ,  Shinobu Saitoh ,  Yoshihiro Hayashi

IPC分类号： H01L21/8247 ,  H01L21/02 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/822 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/04 ,  H01L27/10 ,  H01L27/105 ,  H01L27/108 ,  H01L29/788 ,  H01L29/792 ,  H01L21/461

CPC分类号： H01L28/55 ,  H01L21/3105 ,  H01L21/31122

摘要： A method of forming a capacitor by forming a dielectric layer over a bottom electrode layer, forming a top electrode layer over the dielectric layer to form laminations of the bottom electrode layer, the dielectric layer and the top electrode layer, and selectively etching the laminations to form a capacitor, the dielectric layer being etched by a reactive ion etching so that the dielectric layer of the capacitor receives no substantive damage in the etching process.

摘要翻译： 一种通过在底部电极层上形成电介质层形成电容器的方法，在电介质层上形成顶部电极层以形成底部电极层，电介质层和顶部电极层的叠层，并选择性地蚀刻叠片至 形成电容器，通过反应离子蚀刻蚀刻电介质层，使得电容器的电介质层在蚀刻工艺中不会受到实质的损坏。