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    Compound and herbicidal composition for weed control
    1.
    发明授权
    Compound and herbicidal composition for weed control 失效
    用于杂草控制的复合和除草组合物

    公开(公告)号：US5939360A

    公开(公告)日：1999-08-17

    申请号：US212794

    申请日：1998-12-15

    申请人： Hiroyuki Adachi ,  Masao Yamaguchi ,  Masami Koguchi ,  Akihiro Takahashi ,  Takashi Kawana ,  Katsunori Tanaka ,  Osamu Miyahara

    发明人： Hiroyuki Adachi ,  Masao Yamaguchi ,  Masami Koguchi ,  Akihiro Takahashi ,  Takashi Kawana ,  Katsunori Tanaka ,  Osamu Miyahara

    IPC分类号： A01N43/80 ,  C07D413/10

    CPC分类号： C07D413/10 ,  A01N43/80

    摘要： The present invention is directed to a compound of formula �I!: ##STR1## or a salt thereof in which R.sub.1 is a a C.sub.1-6 alkyl group, R.sup.2 is a halogen atom, a C.sub.1-6 alkylthio group, a C.sub.1-6 alkylsulfinyl group or a C.sub.1-6 alkylsulfonyl group, R.sup.3 and R.sup.4 are each independently hydrogen, a C.sub.1-6 alkyl group or a C.sub.1-6 haloalkyl group, and R is hydrogen or a C.sub.1-6 alkyl group. The present invention is further directed to a compound of formula �1! or a salt thereof, as described above and in which R.sup.1 and R.sup.3 are methyl, R.sup.2 is chlorine or methylsulfonyl, R.sup.4 is hydrogen, and R is methyl or ethyl. In addition, the present invention is directed to a herbicidal composition, characterized in that it contains as active agent one or more compounds of formula �I! or salt thereof in which R.sup.1, R.sup.2, R.sup.3, R.sup.4 are as described above.

    摘要翻译： 本发明涉及式[I]化合物或其盐，其中R 1为C 1-6烷基，R 2为卤素原子，C 1-6烷硫基，C 1-6烷基亚磺酰基或 C 1-6烷基磺酰基，R 3和R 4各自独立地为氢，C 1-6烷基或C 1-6卤代烷基，R为氢或C 1-6烷基。 本发明还涉及如上所述的式[1]化合物或其盐，其中R 1和R 3是甲基，R 2是氯或甲磺酰基，R 4是氢，R是甲基或乙基。 此外，本发明涉及一种除草组合物，其特征在于其含有一种或多种式[I]化合物或其盐，其中R 1，R 2，R 3，R 4如上所述。

    Substrate treatment method, coating treatment apparatus, and substrate treatment system
    3.
    发明授权
    Substrate treatment method, coating treatment apparatus, and substrate treatment system 有权
    基板处理方法，涂布处理装置和基板处理系统

    公开(公告)号：US08703400B2

    公开(公告)日：2014-04-22

    申请号：US13041935

    申请日：2011-03-07

    申请人： Kenji Tsutsumi ,  Junichi Kitano ,  Osamu Miyahara ,  Hideharu Kyouda

    发明人： Kenji Tsutsumi ,  Junichi Kitano ,  Osamu Miyahara ,  Hideharu Kyouda

    IPC分类号： G03F7/26

    CPC分类号： H01L21/67225 ,  H01L21/67051 ,  H01L21/6715 ,  Y10S414/136 ,  Y10S414/141

    摘要： In the coating treatment apparatus, in a first treatment chamber, the front and rear surfaces of the substrate held by a transfer arm are inverted by a turning mechanism, and a coating solution is applied from a coating nozzle to the rear surface of the substrate. The substrate is transferred into a second treatment chamber, in which the coating solution on the rear surface is heated by a heating unit to cure, thereby forming a coating film on the rear surface of the substrate. The formation of the coating film by the coating treatment apparatus is performed before exposure processing, whereby the rear surface of the substrate can be flat for the exposure processing.

    摘要翻译： 在涂布处理装置中，在第一处理室中，由转印臂保持的基板的前表面和后表面通过转动机构反转，并且涂布溶液从涂布喷嘴施加到基板的后表面。 将基板转移到第二处理室中，其中通过加热单元将后表面上的涂布溶液加热固化，从而在基板的后表面上形成涂膜。 在曝光处理之前，通过涂布处理装置形成涂膜，由此基板的后表面可以平坦地进行曝光处理。

    Substrate processing method, substrate processing system, and computer-readable storage medium
    4.
    发明授权
    Substrate processing method, substrate processing system, and computer-readable storage medium 有权
    基板处理方法，基板处理系统和计算机可读存储介质

    公开(公告)号：US08083959B2

    公开(公告)日：2011-12-27

    申请号：US11958839

    申请日：2007-12-18

    申请人： Hideharu Kyouda ,  Junichi Kitano ,  Osamu Miyahara ,  Kenji Tsutsumi

    发明人： Hideharu Kyouda ,  Junichi Kitano ,  Osamu Miyahara ,  Kenji Tsutsumi

    IPC分类号： B44C1/22

    CPC分类号： H01L21/31144 ,  H01L21/67207

    摘要： In the present invention, a plurality of rounds of patterning are performed on a substrate. In a patterning system, the substrate on which a first round of patterning has been performed is transferred to a planarizing film forming unit, where a planarizing film is formed above the substrate. The substrate is then transferred to the patterning system and subjected to a second round of patterning. The time from the completion of the forming processing of the planarizing film to the start of the second round of patterning is managed to be constant among the substrates. According to the present invention, in the pattern forming processing of performing a plurality of rounds of patterning, a pattern with a desired dimension can be stably formed above the substrate.

    摘要翻译： 在本发明中，在基板上进行多次图案化。 在图案形成系统中，已经进行了第一轮图案化的基板被转印到平坦化膜形成单元，其中在基板上形成平坦化膜。 然后将衬底转移到图案化系统并进行第二轮图案化。 从平面化膜的成形处理完成到第二轮图案化开始的时间被控制为在基板之间是恒定的。 根据本发明，在进行多次图案化的图案形成处理中，可以稳定地在基板上方形成具有期望尺寸的图案。

    Method of heat treatment for Ni-base alloy tube
    6.
    发明授权
    Method of heat treatment for Ni-base alloy tube 有权
    镍基合金管热处理方法

    公开(公告)号：US07037390B2

    公开(公告)日：2006-05-02

    申请号：US10681117

    申请日：2003-10-09

    申请人： Osamu Miyahara ,  Toshihiro Imoto ,  Hiroyuki Anada ,  Kazuyuki Kitamura

    发明人： Osamu Miyahara ,  Toshihiro Imoto ,  Hiroyuki Anada ,  Kazuyuki Kitamura

    IPC分类号： C22C1/10

    CPC分类号： C22C19/058 ,  C21D1/74 ,  C21D9/08 ,  C22F1/02 ,  C22F1/10 ,  C23C8/10 ,  C23C8/16

    摘要： A method of heat treatment for an efficient forming of two-layered oxide film on the inside surface of a Ni-base alloy tube. The oxide film suppresses the Ni release in a high-temperature water environment.At least two gas supplying devices are provided on the outlet side of a continuous heat treatment furnace; or one gas supplying device is provided respectively on the outlet side and the inlet side thereof. The tube is put into the furnace while supplying an atmospheric gas into the tube from the front end of the tube moving direction with one of these gas supplying devices and a gas introducing pipe, which is arranged inside the furnace, and this tube is maintained at 650 to 1200° C. for 1 to 1200 minutes. The atmospheric gas consists of hydrogen or a mixture of hydrogen and argon, whose dew point is in a range of from −60° C. to +20° C. After the front end of the Ni-base alloy tube reaches the outlet side of the furnace, the supply of atmospheric gas into the tube is switched to the supply from other gas supplying device. The operations are repeated.

    摘要翻译： 一种用于在Ni基合金管的内表面上有效形成双层氧化膜的热处理方法。 该氧化物膜在高温水环境中抑制Ni释放。 在连续热处理炉的出口侧设置至少两个供气装置; 或者在其出口侧和入口侧分别设置一个气体供给装置。 将管放入炉中，同时从管移动方向的前端向气体供给装置和气体导入管中的一个供给大气气体，并将该管保持在炉内 650〜1200℃1〜1200分钟。 气氛气体由氢气或氢气和氩气的混合物组成，其露点在-60℃至+ 20℃的范围内。在Ni基合金管的前端到达出口侧 炉子中，将大气气体供应到管中被切换到来自其他气体供应装置的供应。 重复操作。

    Austenitic heat resistant alloy
    8.
    发明授权
    Austenitic heat resistant alloy 有权
    奥氏体耐热合金

    公开(公告)号：US08313591B2

    公开(公告)日：2012-11-20

    申请号：US12647028

    申请日：2009-12-24

    申请人： Hiroyuki Hirata ,  Atsuro Iseda ,  Hirokazu Okada ,  Hiroyuki Semba ,  Kaori Kawano ,  Osamu Miyahara

    发明人： Hiroyuki Hirata ,  Atsuro Iseda ,  Hirokazu Okada ,  Hiroyuki Semba ,  Kaori Kawano ,  Osamu Miyahara

    IPC分类号： C22C30/00 ,  C22C19/05

    CPC分类号： C22C38/44 ,  C21D6/001 ,  C21D6/002 ,  C21D6/004 ,  C22C38/001 ,  C22C38/002 ,  C22C38/008 ,  C22C38/02 ,  C22C38/04 ,  C22C38/06 ,  C22C38/50 ,  C22C38/52 ,  C22C38/54 ,  F22B37/04

    摘要： An austenitic heat resistant alloy, which contains, by mass percent, C≦0.15%, Si≦2%, Mn≦3%, Ni: 40 to 80%, Cr: 15 to 40%, W and Mo: 1 to 15% in total content, Ti≦3%, Al≦3%, N≦0.03%, O≦0.03%, with the balance being Fe and impurities, and among the impurities P≦0.04%, S≦0.03%, Sn≦0.1%, As≦0.01%, Zn≦0.01%, Pb≦0.01% and Sb≦0.01%, and satisfies the conditions [P1=S+{(P+Sn)/2}+{(As+Zn+Pb+Sb)/5}≦0.050], [0.2≦P2=Ti+2Al≦7.5−10×P1], [P2≦9.0−100×O] and [N≦0.002×P2+0.019] can prevent both the liquation crack in the HAZ and the brittle crack in the HAZ and also can prevent defects due to welding fabricability, which occur during welding fabrication, and moreover has excellent creep strength at high temperatures. Therefore, the alloy can be used suitably as a material for constructing high temperature machines and equipment, such as power generating boilers, plants for the chemical industry and so on. The ally may contain a specific amount or amounts of one or more elements selected from Co, B, Ta, Hf, Nb, Zr, Ca, Mg, Y, La, Ce and Nd.

    摘要翻译： 一种奥氏体耐热合金，以质量％计含有0.15％，Si＆NlE; 2％，Mn＆NlE; 3％，Ni：40〜80％，Cr：15〜40％，W和Mo：1〜15％ 在总含量中，Ti＆NlE; 3％，Al＆NlE; 3％，N＆amp; NlE; 0.03％，O＆NlE; 0.03％，余量为Fe和杂质，杂质P＆lt; L; 0.04％，S＆NlE; 0.03％，Sn＆ ，As / nlE; 0.01％，Zn和nlE; 0.01％，Pb和nlE; 0.01％和Sb＆nlE; 0.01％，满足条件[P1 = S + {（P + Sn）/ 2} + {（As + Zn + Pb + Sb）/ 5}＆nlE; 0.050]，[0.2＆nlE; P2 = Ti + 2Al＆nlE; 7.5-10×P1]，[P2＆nlE; 9.0-100×O]和[N＆lt; lE; 0.002×P2 + 0.019]可以防止液化裂纹 HAZ和HAZ中的脆性裂纹，并且还可以防止在焊接制造期间发生的焊接可制造性的缺陷，并且还在高温下具有优异的蠕变强度。 因此，该合金可以适当地用作构成发电锅炉，化工工业用等的高温机器和设备的材料。 盟友可以含有一定量或数量的选自Co，B，Ta，Hf，Nb，Zr，Ca，Mg，Y，La，Ce和Nd中的一种或多种元素。

    RINSING METHOD AND DEVELOPING METHOD
    9.
    发明申请
    RINSING METHOD AND DEVELOPING METHOD 有权
    冲洗方法与开发方法

    公开(公告)号：US20110229120A1

    公开(公告)日：2011-09-22

    申请号：US13117483

    申请日：2011-05-27

    申请人： Yasuhiro TAKAKI ,  Osamu Miyahara ,  Keiichi Tanaka ,  Shinya Wakamizu ,  Takashi Terada

    发明人： Yasuhiro TAKAKI ,  Osamu Miyahara ,  Keiichi Tanaka ,  Shinya Wakamizu ,  Takashi Terada

    IPC分类号： G03D5/00

    CPC分类号： H01L21/67051 ,  G03F7/3021

    摘要： A rinsing method for performing a rinsing process on a substrate, after a developing process is performed on a light-exposed pattern disposed thereon, includes a step (STEP 5) of throwing off a developing solution from the substrate after development; a step (STEP 6) of supplying a water-based cleaning liquid onto the substrate; a step (STEP 7) of supplying a surfactant-containing rinsing liquid onto the substrate to replace liquid remaining on the substrate with the surfactant-containing rinsing liquid; and a step (STEP 8) of rotating the substrate to expand and throw off the surfactant-containing rinsing liquid on the substrate. STEP 8 is arranged to supply the surfactant-containing rinsing liquid for a supply time of 5 seconds or less. STEP 9 is arranged to include a first period with a lower rotation number and a second period with a higher rotation number, and to set the rotation number of the substrate in the first period to be more than 300 rpm and less than 1,000 rpm.

    摘要翻译： 在对其上设置的曝光图案进行显影处理之后，在基板上进行漂洗处理的漂洗方法包括在显影后从显影基板抛出显影液的工序（步骤5） 向基板供给水性清洗液的工序（工序6） 将含表面活性剂的冲洗液供给到基板上以用含表面活性剂的冲洗液取代残留在基板上的液体的步骤（STEP7） 以及使基板旋转以使基板上含表面活性剂的冲洗液体膨胀和脱落的工序（步骤8）。 步骤8被布置成供给含有表面活性剂的冲洗液，供给时间为5秒以下。 步骤9被布置成包括具有较低转数的第一周期和具有较高转数的第二周期，并且将第一周期中的基板的转数设定为大于300rpm且小于1,000rpm。

    DEVELOPING METHOD AND DEVELOPING APPARATUS
    10.
    发明申请
    DEVELOPING METHOD AND DEVELOPING APPARATUS 有权
    发展方法和发展手段

    公开(公告)号：US20090079948A1

    公开(公告)日：2009-03-26

    申请号：US12273165

    申请日：2008-11-18

    申请人： Junichi KITANO ,  Osamu Miyahara ,  Shinya Wakamizu

    发明人： Junichi KITANO ,  Osamu Miyahara ,  Shinya Wakamizu

    IPC分类号： G03B27/52

    CPC分类号： G03F7/40

    摘要： A developing method is used for subjecting a light-exposed resist film disposed on a wafer W to a developing process by a developing solution and a rinsing process by a rinsing liquid. In a state where the resist film on the wafer W is wet with the developing solution or rinsing liquid before a drying process is performed on the wafer W, a chemical liquid (curing chemical liquid), which contains a resist curing aid contributory to curing of a resist film remaining on the wafer W, is supplied onto a surface of the wafer W. Then, ultraviolet rays are radiated onto a surface of the wafer to cure a resist film remaining on the wafer W by a synergistic effect of the resist curing aid and the ultraviolet rays thus radiated, so as to prevent pattern fall.

    摘要翻译： 使用显影方法对设置在晶片W上的曝光抗蚀剂膜进行显影液的显影处理和通过漂洗液的漂洗处理。 在对晶片W进行干燥处理之前，晶片W上的抗蚀剂膜与显影液或漂洗液体湿润的状态下，含有抗蚀剂固化助剂的化学液（固化化学液） 保留在晶片W上的抗蚀剂膜被提供到晶片W的表面上。然后，通过抗蚀剂固化助剂的协同效应将紫外线辐射到晶片的表面上以固化残留在晶片W上的抗蚀剂膜 并且因此辐射紫外线，以防止图案下降。