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    Aluminum nitride single crystal film, aluminum nitride single crystal multi-layer substrate and manufacturing processes thereof
    5.
    发明申请
    Aluminum nitride single crystal film, aluminum nitride single crystal multi-layer substrate and manufacturing processes thereof 失效
    氮化铝单晶膜，氮化铝单晶多层基板及其制造方法

    公开(公告)号：US20100215987A1

    公开(公告)日：2010-08-26

    申请号：US11989841

    申请日：2006-08-01

    申请人： Hiroyuki Fukuyama ,  Kazuya Takada ,  Akira Hakomori

    发明人： Hiroyuki Fukuyama ,  Kazuya Takada ,  Akira Hakomori

    IPC分类号： B32B9/04 ,  C30B25/10 ,  C01B21/072

    CPC分类号： C30B29/403 ,  C30B1/10 ,  C30B25/02

    摘要： In a method of manufacturing an aluminum nitride single crystal film on a substrate by heating a sapphire substrate in the presence of carbon, nitrogen and carbon monoxide, an aluminum compound which differs from the raw material sapphire substrate and the formed aluminum nitride single crystal and can control the concentration of aluminum in the heating atmosphere, such as aluminum nitride or alumina, is made existent in a reaction system to promote a reduction nitriding reaction.An aluminum nitride single crystal multi-layer substrate having an aluminum nitride single crystal film on the surface of a sapphire substrate, wherein the aluminum nitride single crystal has improved crystallinity and a low density of defects, is provided.

    摘要翻译： 在通过在碳，氮和一氧化碳的存在下加热蓝宝石衬底而在衬底上制造氮化铝单晶膜的方法，与原料蓝宝石衬底和形成的氮化铝单晶不同的铝化合物 在反应体系中存在控制加热气氛中的铝的浓度如氮化铝或氧化铝以促进还原氮化反应。 提供了在蓝宝石衬底的表面上具有氮化铝单晶膜的氮化铝单晶多层衬底，其中所述氮化铝单晶具有改善的结晶度和低密度缺陷。

    Aluminum nitride single crystal film, aluminum nitride single crystal multi-layer substrate and manufacturing processes thereof
    6.
    发明授权
    Aluminum nitride single crystal film, aluminum nitride single crystal multi-layer substrate and manufacturing processes thereof 失效
    氮化铝单晶膜，氮化铝单晶多层基板及其制造方法

    公开(公告)号：US08137825B2

    公开(公告)日：2012-03-20

    申请号：US11989841

    申请日：2006-08-01

    申请人： Hiroyuki Fukuyama ,  Kazuya Takada ,  Akira Hakomori

    发明人： Hiroyuki Fukuyama ,  Kazuya Takada ,  Akira Hakomori

    IPC分类号： B32B9/00

    CPC分类号： C30B29/403 ,  C30B1/10 ,  C30B25/02

    摘要： In a method of manufacturing an aluminum nitride single crystal film on a substrate by heating a sapphire substrate in the presence of carbon, nitrogen and carbon monoxide, an aluminum compound which differs from the raw material sapphire substrate and the formed aluminum nitride single crystal and can control the concentration of aluminum in the heating atmosphere, such as aluminum nitride or alumina, is made existent in a reaction system to promote a reduction nitriding reaction.An aluminum nitride single crystal multi-layer substrate having an aluminum nitride single crystal film on the surface of a sapphire substrate, wherein the aluminum nitride single crystal has improved crystallinity and a low density of defects, is provided.

    摘要翻译： 在通过在碳，氮和一氧化碳的存在下加热蓝宝石衬底而在衬底上制造氮化铝单晶膜的方法，与原料蓝宝石衬底和形成的氮化铝单晶不同的铝化合物 在反应体系中存在控制加热气氛中的铝的浓度如氮化铝或氧化铝以促进还原氮化反应。 提供了在蓝宝石衬底的表面上具有氮化铝单晶膜的氮化铝单晶多层衬底，其中所述氮化铝单晶具有改善的结晶度和低密度缺陷。

    LAMINATED BODY AND THE METHOD FOR PRODUCTION THEREOF
    7.
    发明申请
    LAMINATED BODY AND THE METHOD FOR PRODUCTION THEREOF 审中-公开
    层压体及其生产方法

    公开(公告)号：US20110094438A1

    公开(公告)日：2011-04-28

    申请号：US12812872

    申请日：2009-01-09

    申请人： Akinori Koukitu ,  Yoshinao Kumagai ,  Masanari Ishizuki ,  Toru Nagashima ,  Akira Hakomori ,  Kazuya Takada

    发明人： Akinori Koukitu ,  Yoshinao Kumagai ,  Masanari Ishizuki ,  Toru Nagashima ,  Akira Hakomori ,  Kazuya Takada

    IPC分类号： C30B25/10

    CPC分类号： C30B25/18 ,  C30B25/183 ,  C30B29/403

    摘要： The present invention provides a self-supporting substrate obtained by the steps of: forming an Al-based group-III nitride thin-layer having a thickness in the range of 3-200 nm on a base substrate made of a single crystal of an inorganic substance which substantially does not decompose at 800° C. in an inert gas atmosphere and which does produce volatiles by decomposition when contacting with a reducing gas in a temperature range of 800-1600° C., for example sapphire; forming voids along the interface between the base substrate and the Al-based group-III nitride thin-layer of the obtained laminated substrate by thermally treating the laminated substrate in a temperature range of 800-1600° C. in a reducing gas atmosphere containing ammonia gas; forming a group-III nitride single crystal thick-layer on the Al-based group-III nitride thin-layer; and separating these formed layers. The self-supporting substrate is a self-supporting substrate of the group-III nitride single crystal such as AlN, which is suitably used for forming a semiconductor device such as ultraviolet light emitting device and of which crystal plane shows a large radius of curvature.

    摘要翻译： 本发明提供一种自支撑基板，其通过以下步骤获得：在由无机物的单晶制成的基底基板上形成厚度在3〜200nm范围内的Al系III族氮化物薄层 在惰性气体气氛中在800℃下基本上不分解的物质，当与800-1600℃的温度范围内的还原气体例如蓝宝石接触时，其通过分解产生挥发物; 通过在800-1600℃的温度范围内在含有氨的还原气体气氛中热处理层压基板，沿着基底基板和Al基III族氮化物薄层之间的界面形成空隙 加油站; 在Al系III族氮化物薄层上形成III族氮化物单晶厚层; 并分离这些形成的层。 自支撑衬底是诸如AlN的III族氮化物单晶的自支撑衬底，其适合用于形成诸如紫外光发射器件的半导体器件，并且其中晶体具有大的曲率半径。

    PRODUCTION METHOD OF AN ALUMINUM NITRIDE SINGLE CRYSTAL
    9.
    发明申请
    PRODUCTION METHOD OF AN ALUMINUM NITRIDE SINGLE CRYSTAL 审中-公开
    硝酸铝单晶的生产方法

    公开(公告)号：US20120240845A1

    公开(公告)日：2012-09-27

    申请号：US13512627

    申请日：2010-11-29

    申请人： Hiroyuki Fukuyama ,  Masanobu Azuma ,  Kazuya Takada ,  Takeshi Hattori

    发明人： Hiroyuki Fukuyama ,  Masanobu Azuma ,  Kazuya Takada ,  Takeshi Hattori

    IPC分类号： C30B25/14 ,  C30B25/16

    CPC分类号： C30B29/403 ,  C30B23/00 ,  C30B23/007 ,  C30B25/00 ,  C30B29/62

    摘要： Disclosed is a novel method wherein an aluminum nitride single crystal having good crystallinity is efficiently and easily manufactured. The method for produsing an aluminum nitride single crystal wherein nitrogen gas is circulated in the presence of a raw material gas generation source, which generates an aluminum gas or an aluminum oxide gas, and a carbon body, and then the aluminum nitride single crystal is grown under a heating condition; characterized in that, at least a part of the carbon body does not directly contact with the raw material gas generation source, at least a part of the raw material gas generation source does not directly contact with the carbon body, the raw material gas generation source and the carbon body are positioned to make a space in which a clearance between the raw material gas generation source, which does not contact with the carbon body, and the carbon body, which does not contact with the raw material gas generation source, is 0.01 to 50 mm, and a heat temperature and a nitrogen gas flow rate are set so as to satisfy a condition for aluminum nitride deposition in a space between the raw material gas generation source, which does not contact with carbon body, and the carbon body, which does not contact with raw material gas generation source.

    摘要翻译： 公开了一种新颖的方法，其中具有良好结晶度的氮化铝单晶被有效且容易地制造。 在生成铝气体或氧化铝气体的原料气体发生源的存在下生成氮气的氮化铝单晶的制造方法和碳体，然后生长氮化铝单晶 在加热条件下 其特征在于，所述碳体的至少一部分不与所述原料气体发生源直接接触，所述原料气体发生源的至少一部分不与碳体直接接触，所述原料气体产生源 并且碳体被定位成使与未与碳体接触的原料气体发生源与不与原料气体发生源接触的碳体之间的间隙为0.01的空间 至50mm，并且设定加热温度和氮气流量以满足与碳体不接触的原料气体发生源与碳体之间的空间中的氮化铝沉积的条件， 其不与原料气体发生源接触。

    Layered body having a single crystal layer
    10.
    发明授权
    Layered body having a single crystal layer 有权
    具有单晶层的层状体

    公开(公告)号：US09297093B2

    公开(公告)日：2016-03-29

    申请号：US13498344

    申请日：2010-09-28

    申请人： Toru Kinoshita ,  Kazuya Takada

    发明人： Toru Kinoshita ,  Kazuya Takada

    IPC分类号： B32B15/04 ,  C30B29/40 ,  C30B25/18 ,  H01L21/02 ,  H01L33/00

    CPC分类号： C30B29/403 ,  C30B25/183 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007

    摘要： A layered body having a single crystal layer including a group III nitride having a composition AlxGayInzN (wherein, X, Y and Z are rational numbers respectively satisfying 0.9≦X≦1.0, 0.0≦Y≦0.1, 0.0≦Z≦0.1, and X+Y+Z=1.0) on a sapphire substrate. The layered body includes an initial single crystal layer that includes the group III nitride composition, an oxygen concentration of 1×1020 cm−3 or more and 5×1021 cm−3 or less and a thickness of 15 nm or more and 40 nm or less on the sapphire substrate and a second group III nitride single crystal layer including the group III nitride composition and having a reduced oxygen concentration than the initial single crystal layer.

    摘要翻译： 具有单晶层的层叠体，其具有Al x Ga y In z N（其中，X，Y和Z分别满足0.9＆nlE; X＆lt; ll; 1.0,0.0＆amp; nlE; Y＆amp; NlE; 0.1,0.0＆amp; NlE; Z＆nlE; 0.1 ，X + Y + Z = 1.0）。 层状体包括初始单晶层，其包含III族氮化物组合物，氧浓度为1×1020cm-3以上且5×1021cm-3以下，厚度为15nm以上且40nm以下，或 较少的蓝宝石衬底和第二III族氮化物单晶层，其包含III族氮化物组合物，并且具有比初始单晶层更低的氧浓度。