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    LAMINATED BODY AND THE METHOD FOR PRODUCTION THEREOF
    1.
    发明申请
    LAMINATED BODY AND THE METHOD FOR PRODUCTION THEREOF 审中-公开
    层压体及其生产方法

    公开(公告)号：US20110094438A1

    公开(公告)日：2011-04-28

    申请号：US12812872

    申请日：2009-01-09

    申请人： Akinori Koukitu ,  Yoshinao Kumagai ,  Masanari Ishizuki ,  Toru Nagashima ,  Akira Hakomori ,  Kazuya Takada

    发明人： Akinori Koukitu ,  Yoshinao Kumagai ,  Masanari Ishizuki ,  Toru Nagashima ,  Akira Hakomori ,  Kazuya Takada

    IPC分类号： C30B25/10

    CPC分类号： C30B25/18 ,  C30B25/183 ,  C30B29/403

    摘要： The present invention provides a self-supporting substrate obtained by the steps of: forming an Al-based group-III nitride thin-layer having a thickness in the range of 3-200 nm on a base substrate made of a single crystal of an inorganic substance which substantially does not decompose at 800° C. in an inert gas atmosphere and which does produce volatiles by decomposition when contacting with a reducing gas in a temperature range of 800-1600° C., for example sapphire; forming voids along the interface between the base substrate and the Al-based group-III nitride thin-layer of the obtained laminated substrate by thermally treating the laminated substrate in a temperature range of 800-1600° C. in a reducing gas atmosphere containing ammonia gas; forming a group-III nitride single crystal thick-layer on the Al-based group-III nitride thin-layer; and separating these formed layers. The self-supporting substrate is a self-supporting substrate of the group-III nitride single crystal such as AlN, which is suitably used for forming a semiconductor device such as ultraviolet light emitting device and of which crystal plane shows a large radius of curvature.

    摘要翻译： 本发明提供一种自支撑基板，其通过以下步骤获得：在由无机物的单晶制成的基底基板上形成厚度在3〜200nm范围内的Al系III族氮化物薄层 在惰性气体气氛中在800℃下基本上不分解的物质，当与800-1600℃的温度范围内的还原气体例如蓝宝石接触时，其通过分解产生挥发物; 通过在800-1600℃的温度范围内在含有氨的还原气体气氛中热处理层压基板，沿着基底基板和Al基III族氮化物薄层之间的界面形成空隙 加油站; 在Al系III族氮化物薄层上形成III族氮化物单晶厚层; 并分离这些形成的层。 自支撑衬底是诸如AlN的III族氮化物单晶的自支撑衬底，其适合用于形成诸如紫外光发射器件的半导体器件，并且其中晶体具有大的曲率半径。

    Method of producing a group III nitride crystal
    3.
    发明授权
    Method of producing a group III nitride crystal 有权
    制造III族氮化物晶体的方法

    公开(公告)号：US08926752B2

    公开(公告)日：2015-01-06

    申请号：US12526685

    申请日：2008-02-27

    申请人： Akinori Koukitu ,  Yoshinao Kumagai ,  Toru Nagashima ,  Kazuya Takada ,  Hiroyuki Yanagi

    发明人： Akinori Koukitu ,  Yoshinao Kumagai ,  Toru Nagashima ,  Kazuya Takada ,  Hiroyuki Yanagi

    IPC分类号： C30B25/00 ,  C30B29/40 ,  C30B25/10 ,  C30B25/18

    CPC分类号： C30B29/403 ,  C30B25/10 ,  C30B25/18

    摘要： There is provided a method capable of obtaining an aluminum-based group III nitride crystal layer having a smooth surface and high crystallinity by employing only HVPE in which inexpensive raw materials can be used to reduce production costs and high-speed film formation is possible without employing MOVPE.To produce a group III nitride crystal by HVPE comprising the step of growing a group III nitride crystal layer by vapor-phase growth on a single crystal substrate by contacting the heated single crystal substrate with a raw material gas containing a group III halide and a compound having a nitrogen atom, the group III nitride crystal is grown by vapor-phase growth on the single crystal substrate heated at a temperature of 1,000° C. or more and less than 1,200° C. to form an intermediate layer and then, a group III nitride crystal is further grown by vapor-phase growth on the intermediate layer on the substrate heated at a temperature of 1,200° C. or higher.

    摘要翻译： 提供了一种能够通过仅使用HVPE来获得具有光滑表面和高结晶度的铝基III族氮化物晶体层的方法，其中可以使用便宜的原料来降低生产成本，并且可以在不使用高速成膜的情况下进行高速成膜 MOVPE。 为了通过HVPE制造III族氮化物晶体，包括通过使加热的单晶衬底与含有III族卤化物和化合物的原料气体接触，在单晶衬底上通过气相生长生长III族氮化物晶体层的步骤 具有氮原子的情况下，在1000℃以上且小于1200℃的温度加热的单晶衬底上通过气相生长生长III族氮化物晶体，形成中间层， 通过在1200℃以上的温度下加热的基板上的中间层上气相生长进一步生长III族氮化物晶体。

    METHOD OF PRODUCING A GROUP III NITRIDE CRYSTAL
    4.
    发明申请
    METHOD OF PRODUCING A GROUP III NITRIDE CRYSTAL 有权
    生产III类氮化物晶体的方法

    公开(公告)号：US20100093124A1

    公开(公告)日：2010-04-15

    申请号：US12526685

    申请日：2008-02-27

    申请人： Akinori Koukitu ,  Yoshinao Kumagai ,  Toru Nagashima ,  Kazuya Takada ,  Hiroyuki Yanagi

    发明人： Akinori Koukitu ,  Yoshinao Kumagai ,  Toru Nagashima ,  Kazuya Takada ,  Hiroyuki Yanagi

    IPC分类号： H01L33/00 ,  C30B25/02

    CPC分类号： C30B29/403 ,  C30B25/10 ,  C30B25/18

    摘要： There is provided a method capable of obtaining an aluminum-based group III nitride crystal layer having a smooth surface and high crystallinity by employing only HVPE in which inexpensive raw materials can be used to reduce production costs and high-speed film formation is possible without employing MOVPE.To produce a group III nitride crystal by HVPE comprising the step of growing a group III nitride crystal layer by vapor-phase growth on a single crystal substrate by contacting the heated single crystal substrate with a raw material gas containing a group III halide and a compound having a nitrogen atom, the group III nitride crystal is grown by vapor-phase growth on the single crystal substrate heated at a temperature of 1,000° C. or more and less than 1,200° C. to form an intermediate layer and then, a group III nitride crystal is further grown by vapor-phase growth on the intermediate layer on the substrate heated at a temperature of 1,200° C. or higher.

    摘要翻译： 提供了一种能够通过仅使用HVPE来获得具有光滑表面和高结晶度的铝基III族氮化物晶体层的方法，其中可以使用便宜的原料来降低生产成本，并且可以在不使用高速成膜的情况下进行高速成膜 MOVPE。 为了通过HVPE制造III族氮化物晶体，包括通过使加热的单晶衬底与含有III族卤化物和化合物的原料气体接触，在单晶衬底上通过气相生长生长III族氮化物晶体层的步骤 具有氮原子的情况下，在1000℃以上且小于1200℃的温度加热的单晶衬底上通过气相生长生长III族氮化物晶体，形成中间层， 通过在1200℃以上的温度下加热的基板上的中间层上气相生长进一步生长III族氮化物晶体。

    n-Type conductive aluminum nitride semiconductor crystal and manufacturing method thereof
    5.
    发明授权
    n-Type conductive aluminum nitride semiconductor crystal and manufacturing method thereof 有权
    n型导电氮化铝半导体晶体及其制造方法

    公开(公告)号：US08129208B2

    公开(公告)日：2012-03-06

    申请号：US12526196

    申请日：2008-02-02

    申请人： Akinori Koukitu ,  Yoshinao Kumagai ,  Toru Nagashima ,  Kazuya Takada ,  Hiroyuki Yanagi

    发明人： Akinori Koukitu ,  Yoshinao Kumagai ,  Toru Nagashima ,  Kazuya Takada ,  Hiroyuki Yanagi

    IPC分类号： H01L21/02

    CPC分类号： C30B25/02 ,  C30B29/403 ,  H01L21/02389 ,  H01L21/02403 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/0262 ,  H01L33/007

    摘要： This invention provides a self supporting substrate which consists of a n-type conductive aluminum nitride semiconductor crystal and is useful for manufacturing the vertical conductive type AlN semiconductor device. The n-type conductive aluminum nitride semiconductor crystal, by which the self supporting substrate is made up, contains Si atom at a concentration of 1×1018 to 5×1020 cm−3 is substantially free of halogen atoms and substantially does not absorb the light having the energy of not more than 5.9 eV. The self supporting substrate can be obtained by a method comprising the steps of forming an AlN crystal layer on a single crystal substrate such as a sapphire by the HVPE method, preheating the obtained substrate having the AlN crystal layer to a temperature of 1,200° C. or more, forming a second layer consisting of the n-type conductive aluminum nitride semiconductor crystal is formed on the AlN crystal layer in high rate by the HVPE method and separating the second layer from the obtained laminate.

    摘要翻译： 本发明提供一种由n型导电氮化铝半导体晶体组成的自支撑衬底，并且可用于制造垂直导电型AlN半导体器件。 构成自支撑衬底的n型导电氮化铝半导体晶体含有浓度为1×1018至5×1020cm-3的Si原子，基本上不含卤素原子并且基本上不吸收光 能量不超过5.9 eV。 自支撑基板可以通过以下方法获得：通过HVPE法在诸如蓝宝石的单晶衬底上形成AlN晶体层的步骤，将获得的具有AlN晶体层的衬底预热到1200℃的温度。 以上，通过HVPE法以高速率在AlN结晶层上形成由n型导电性氮化铝半导体晶体构成的第二层，并将第二层与得到的层叠体分离。

    N-TYPE CONDUCTIVE ALUMINUM NITRIDE SEMICONDUCTOR CRYSTAL AND MANUFACTURING METHOD THEREOF
    6.
    发明申请
    N-TYPE CONDUCTIVE ALUMINUM NITRIDE SEMICONDUCTOR CRYSTAL AND MANUFACTURING METHOD THEREOF 有权
    N型导电氮化镓半导体晶体及其制造方法

    公开(公告)号：US20100320462A1

    公开(公告)日：2010-12-23

    申请号：US12526196

    申请日：2008-02-02

    申请人： Akinori Koukitu ,  Yoshinao Kumagai ,  Toru Nagashima ,  Kazuya Takada ,  Hiroyuki Yanagi

    发明人： Akinori Koukitu ,  Yoshinao Kumagai ,  Toru Nagashima ,  Kazuya Takada ,  Hiroyuki Yanagi

    IPC分类号： H01L29/06 ,  H01L29/20 ,  H01L21/203

    CPC分类号： C30B25/02 ,  C30B29/403 ,  H01L21/02389 ,  H01L21/02403 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/0262 ,  H01L33/007

    摘要： This invention provides a selfsupporting substrate which consists of a n-type conductive aluminum nitride semiconductor crystal and is useful for manufacturing the vertical conductive type AlN semiconductor device.The n-type conductive aluminum nitride semiconductor crystal, by which the selfsupporting substrate is made up, contains Si atom at a concentration of 1×1018 to 5×1020 cm−3, is substantially free from halogen atoms, and substantially does not absorb the light having the energy of not more than 5.9 eV. The selfsupporting substrate can be obtained by a method comprising the steps of forming an AlN crystal layer on a single crystal substrate such as a sapphire by the HVPE method, preheating the obtained substrate having the AlN crystal layer to a temperature of 1,200° C. or more, forming a second layer consisting of the n-type conductive aluminum nitride semiconductor crystal is formed on the AlN crystal layer in high rate by the HVPE method and separating the second layer from the obtained laminate.

    摘要翻译： 本发明提供一种由n型导电氮化铝半导体晶体组成的自支撑衬底，并且可用于制造垂直导电型AlN半导体器件。 构成自支撑衬底的n型导电氮化铝半导体晶体含有浓度为1×1018至5×1020cm-3的Si原子，基本上不含卤素原子，并且基本上不吸收 能量不超过5.9 eV的光。 可以通过以下方法获得自支撑衬底：通过HVPE法在诸如蓝宝石的单晶衬底上形成AlN晶体层的步骤，将获得的具有AlN晶体层的衬底预热至1200℃的温度，或 通过HVPE法在AlN晶体层上高效率地形成由n型导电氮化铝半导体晶体构成的第二层，并将第二层与所得层压体分离。