摘要:
A solid state imager device such as a CCD imager device includes a timing generator which generates and supplies a clamping circuit with, a clamping pulse for clamping a first signal, corresponding to one pixel, from a through region of a CCD shift register, and a clamping pulse for clamping a second signal, corresponding to one pixel, from an optical black region of a sensor array. Specifically, the clamping pulse for clamping the first signal clamps a signal, corresponding to a first pixel, from the through region, and the clamping pulse for clamping the second signal clamps a signal, corresponding to a second or following pixel, from the optical black region. An output signal from the clamping circuit is supplied to an A/D converter which converts the supplied signal at such timing as not to sample the signal, corresponding to the first pixel, from the through region.
摘要:
A charge transfer device includes a circuit which can correct a fluctuated amount of light (charge amount)--output voltage characteristic with accuracy even when fluctuated by the change of temperature and the fluctuation of a power supply voltage. An output voltage characteristic in the standard state corresponding to a reference charge is stored and held in a ROM in advance. An ALU (arithmetic logical unit) corrects the light (charge amount)--output voltage characteristic by using the output voltage characteristic in the standard state corresponding to the reference charge stored in the ROM and the output voltages corresponding to the reference charge inputs from reference charge input portions in an imaging state, and corrects an output voltage (Va) corresponding to a signal charge in a practical imaging state.
摘要:
The photometric sensor of the present invention includes a plurality of photoelectric conversion elements which accumulate electric charge according to the intensity of the light which is incident upon them; a CCD shift register, comprising a plurality of CCD (Charge Coupled Device) elements which correspond respectively to the plurality of photoelectric conversion elements, and at least one relay CCD element which does not correspond to any one of the photoelectric conversion elements, and which reads in the accumulated electric charges from the plurality of photoelectric conversion elements to the plurality of CCD elements and transmits them via the relay CCD element; a charge to voltage conversion circuit which converts the accumulated electric charges transmitted from the CCD shift register into photometric signals and outputs them in order; and a timing signal generation circuit which, when the photometric signals from the charge to voltage conversion circuit originating from the plurality of photoelectric conversion elements are output, outputs in synchronism with this output a timing signal, and, when a signal from the charge to voltage conversion circuit originating from the relay CCD element is output, does not output the timing signal in synchronism with this output.
摘要:
A control circuit generates a control signal which is of a low level during a certain period of time after the power supply of a solid state imager has been turned on or a power save mode thereof has been canceled, and of a high level after elapse of the period of time. Based on the control signal, a timing generator generates transfer clock signals having a high frequency than when the solid state imager is in a normal transfer mode, and applies the transfer clock signals to a CCD shift register to remove or transfer excessive invalid charges at a high rate therefrom. After the power supply has been turned on or the power save mode has been canceled, therefore, the time required to bring the solid state imager into a condition capable of imaging a subject is shortened.
摘要:
When a signal output by a solid-state image sensing device is clamped to a predetermined reference potential, a high voltage generated in a transfer suspension period after the clamping as generally supplied to an A/D converter is generated. A sample/hold output Va is clamped to a clamp level Vref over a period of time between a halfway point of time of a signal of a picture element preceding ahead by one line and the end of an inhibit period of transfer clocks of a signal output by an empty transmission unit via a first clamp pulse and a sample/hold output for the second picture element, or a subsequent one of an OPB unit is clamped to the clamp level via a second clamp pulse to prevent a signal output from exceeding a reference voltage from being supplied to an A/D converter at a later stage.
摘要:
When a signal output by a solid-state image sensing device is clamped to a predetermined reference potential, a high voltage generated in a transfer suspension period after the clamping as generally supplied to an A/D converter is generated. A sample/hold output Va is clamped to a clamp level Vref over a period of time between a halfway point of time of a signal of a picture element preceding ahead by one line and the end of an inhibit period of transfer clocks of a signal output by an empty transmission unit via a first clamp pulse and a sample/hold output for the second picture element, or a subsequent one of an OPB unit is clamped to the clamp level via a second clamp pulse to prevent a signal output from exceeding a reference voltage from being supplied to an A/D converter at a later stage.
摘要:
When a signal output by a solid-state image sensing device is clamped to a predetermined reference potential, a high voltage generated in a transfer suspension period after the clamping as generally supplied to an A/D converter is generated. A sample/hold output Va is clamped to a clamp level Vref over a period of time between a halfway point of time of a signal of a picture element preceding ahead by one line and the end of an inhibit period of transfer clocks of a signal output by an empty transmission unit via a first clamp pulse and a sample/hold output for the second picture element, or a subsequent one of an OPB unit is clamped to the clamp level via a second clamp pulse to prevent a signal output from exceeding a reference voltage from being supplied to an A/D converter at a later stage.
摘要:
In a floating diffusion output type or a floating gate output type charge-to-voltage converter, the floating diffusion or the floating gate is coupled to one or more diffusion regions by means of one or more switch elements, and such elements are selectively turned on or off in such a manner that the the charge-to-voltage conversion factor is raised to obtain a great voltage amplitude when a small quantity of signal charge is input, or the conversion factor is lowered to obtain a small voltage amplitude when a large quantity of signal charge is input.
摘要:
An adaptive peak value detector, wherein the peak value for a peak hold section is detected, the peak hold section being selected by a peak hold control circuit. A solid-state imaging sensor generates pixel signals representative of an image and the peak value of portions of the pixel signals is detected. The exposure time of the sensor is adjusted as a function of the detected peak value and auto-focusing of the image for the camera is carried out on the basis of the image received during the adjusted exposure time.
摘要:
It is an object of the present invention to provide a solid-state image sensing device with a vertical shutter structure allowing the size of the solid-state image sensing device with ease. An electric-charge exhausting unit is provided on the same side of a sensor array comprising a plurality of sensor units arranged to form a straight line as an electric-charge transferring unit wherein the electric-charge exhausting unit comprising an electric-charge exhaust drain having a shape resembling an island and an electric-charge exhausting gate with a bent shape surrounding the electric-charge exhaust drain is provided in such a way that the electric-charge exhausting unit is in contact with a first region of a read gate, and only one electric-charge exhausting unit is provided for each pair of sensor units adjacent to each other.