公开(公告)号：US5642162A

公开(公告)日：1997-06-24

申请号：US631928

申请日：1996-04-15

申请人： Yasuhito Maki ,  Maki Sato ,  Tadakuni Narabu ,  Tadao Takagi ,  Hiroyuki Iwasaki ,  Tetsuro Goto

发明人： Yasuhito Maki ,  Maki Sato ,  Tadakuni Narabu ,  Tadao Takagi ,  Hiroyuki Iwasaki ,  Tetsuro Goto

IPC分类号： H01L27/148 ,  H01L21/339 ,  H01L29/762 ,  H04N5/335 ,  H04N5/341 ,  H04N5/351 ,  H04N5/357 ,  H04N5/361 ,  H04N5/369 ,  H04N5/372 ,  H04N5/3728 ,  H04N5/378 ,  H04N3/14

CPC分类号： H04N5/361 ,  H04N5/3728

摘要： A charge transfer device includes a circuit which can correct a fluctuated amount of light (charge amount)--output voltage characteristic with accuracy even when fluctuated by the change of temperature and the fluctuation of a power supply voltage. An output voltage characteristic in the standard state corresponding to a reference charge is stored and held in a ROM in advance. An ALU (arithmetic logical unit) corrects the light (charge amount)--output voltage characteristic by using the output voltage characteristic in the standard state corresponding to the reference charge stored in the ROM and the output voltages corresponding to the reference charge inputs from reference charge input portions in an imaging state, and corrects an output voltage (Va) corresponding to a signal charge in a practical imaging state.

摘要翻译： 电荷转移装置包括可以通过温度变化和电源电压的波动波动而能够精确地校正波动量（充电量） - 输出电压特性的电路。 对应于参考电荷的标准状态的输出电压特性预先存储并保存在ROM中。 ALU（算术逻辑单元）通过使用与存储在ROM中的参考电荷相对应的标准状态下的输出电压特性和对应于参考电荷的参考电荷输入的输出电压来校正光（充电量） - 输出电压特性 输入部分，并且在实际成像状态下校正与信号电荷相对应的输出电压（Va）。

公开(公告)号：US06310369B1

公开(公告)日：2001-10-30

申请号：US08789519

申请日：1997-01-27

申请人： Tadakuni Narabu ,  Maki Sato ,  Yasuhito Maki

发明人： Tadakuni Narabu ,  Maki Sato ,  Yasuhito Maki

IPC分类号： H01L24148

CPC分类号： H01L29/76816 ,  G11C19/285

摘要： In a floating diffusion output type or a floating gate output type charge-to-voltage converter, the floating diffusion or the floating gate is coupled to one or more diffusion regions by means of one or more switch elements, and such elements are selectively turned on or off in such a manner that the the charge-to-voltage conversion factor is raised to obtain a great voltage amplitude when a small quantity of signal charge is input, or the conversion factor is lowered to obtain a small voltage amplitude when a large quantity of signal charge is input.

摘要翻译： 在浮动扩散输出型或浮置栅极输出型电荷 - 电压转换器中，浮动扩散或浮动栅极通过一个或多个开关元件耦合到一个或多个扩散区域，并且这些元件选择性地导通 或者使得当输入少量的信号电荷时提高电荷电压转换因子以获得大的电压幅度，或者当大量的转换因子降低以获得小的电压幅度时， 的信号电荷被输入。

公开(公告)号：US5227650A

公开(公告)日：1993-07-13

申请号：US824355

申请日：1992-01-23

申请人： Katsunori Noguchi ,  Maki Sato ,  Tadakuni Narabu ,  Yasuhito Maki

发明人： Katsunori Noguchi ,  Maki Sato ,  Tadakuni Narabu ,  Yasuhito Maki

IPC分类号： H01L29/762 ,  H01L21/339 ,  H01L29/768 ,  H04N5/335 ,  H04N5/341 ,  H04N5/372

CPC分类号： H01L29/76833 ,  H01L29/76816

摘要： The present invention is to provide a CCD delay line in which a deterioration of a charge transfer efficiency can be reduced by maintaining a charge amount treated in a charge transfer section provided at the rear stage of an intermediate output section. According to an aspect of the present invention, in a charge transfer device having charge transfer sections of a plurality of stages consisting of electrode pairs of a transfer gate electrode and a storage gate electrode and at least one intermediate output section provided at the rear stage of a charge transfer section of a predetermined stage from the signal input side, a cross-sectional area of at least one of the transfer gate electrode and the storage gate electrode in the charge transfer section provided at the rear stage of the intermediate output section is selected to be larger than that in the charge transfer section provided at the front stage of the intermediate output section. Further, the impurity concentration in the region of a semiconductor substrate corresponding to the transfer gate electrode in the charge transfer section provided at the rear stage of the intermediate output section is selected to be lower than that in the charge transfer section provided at the front stage of the intermediate output section, thereby the potential barrier being increased.

公开(公告)号：US5029189A

公开(公告)日：1991-07-02

申请号：US102432

申请日：1987-09-29

申请人： Maki Sato ,  Tadakuni Narabu ,  Yasuhito Maki

发明人： Maki Sato ,  Tadakuni Narabu ,  Yasuhito Maki

IPC分类号： G11C19/28 ,  G11C27/04 ,  H01L27/105 ,  H01L29/768

CPC分类号： H01L27/1057 ,  G11C19/285 ,  G11C27/04 ,  H01L29/76808

摘要： A charge coupled device employs peak hold circuits for detecting electric charges transferred through reference registers for facilitating automatic iput bias control. The peak hold circuits are respectively connected to a pair of reference registers which are so designed that one of the reference registers has a given maximum rating and the other reference register is adapted to transfer electric charge having a given fraction of the maximum charge rating of the aforementioned one of registers. The peak hold circuits provide peak values of the outputs of the reference registers to a comparator which feedback controls the input bias of the one of the register. This controlled bias is also applied to an input bias for a signal register which is designed for transferring input electric charge.

摘要翻译： 电荷耦合器件采用峰值保持电路来检测通过参考寄存器传输的电荷，以便于自动iput偏置控制。 峰值保持电路分别连接到一对参考寄存器，其被设计为使得一个参考寄存器具有给定的最大额定值，而另一个参考寄存器适于转移具有给定最大额定电压的给定分数的电荷 上述一个寄存器。 峰值保持电路将参考寄存器的输出的峰值提供给比较器，反馈控制寄存器之一的输入偏置。 该受控偏置也适用于设计用于传输输入电荷的信号寄存器的输入偏置。

公开(公告)号：US5612739A

公开(公告)日：1997-03-18

申请号：US610577

申请日：1996-03-07

申请人： Yasuhito Maki ,  Maki Sato ,  Tadakuni Narabu

发明人： Yasuhito Maki ,  Maki Sato ,  Tadakuni Narabu

IPC分类号： H01L29/762 ,  H01L21/339 ,  H01L27/148 ,  H04N5/335 ,  H04N5/341 ,  H04N5/357 ,  H04N5/361 ,  H04N5/363 ,  H04N5/369 ,  H04N5/372 ,  H04N5/3728 ,  H04N5/378

CPC分类号： H04N5/361 ,  H04N5/37213 ,  H04N5/3728

摘要： A charge transfer device including a charge input portion for inputting a reference charge, a charge transfer portion for receiving and transferring the reference charge, and a conversion portion converting the reference charge outputted from the charge transfer portion into a reference voltage. The reference charge input portion may be arranged to generate a reference charge. Alternatively, the reference charge may be externally generated. The charge transfer device may further include a signal charge input portion for inputting signal charges to the charge transfer portion. The signal charge input portion may be arranged to generate signal charges corresponding to incident light. Signal charges externally generated may be inputted to the signal charge input portion. The charge transfer device enables a charge-output voltage characteristic to be accurately detected at all times without any problem. It is also possible to accurately control the charge-output voltage characteristic.

摘要翻译： 一种电荷转移装置，包括用于输入参考电荷的电荷输入部分，用于接收和转移参考电荷的电荷转移部分，以及将从电荷转移部分输出的参考电荷转换为参考电压的转换部分。 参考电荷输入部分可以被布置成产生参考电荷。 或者，可以从外部产生参考电荷。 电荷转移装置还可以包括用于向电荷转移部分输入信号电荷的信号电荷输入部分。 信号电荷输入部分可以被布置成产生对应于入射光的信号电荷。 外部产生的信号电荷可以被输入到信号电荷输入部分。 电荷转移装置能够始终没有任何问题地一直准确地检测电荷输出电压特性。 也可以精确地控制充放电电压特性。

公开(公告)号：US5189499A

公开(公告)日：1993-02-23

申请号：US771867

申请日：1991-10-08

申请人： Akio Izumi ,  Yasuhito Maki ,  Tadakuni Narabu ,  Maki Sato ,  Takaji Otsu ,  Katsuyuki Saito

发明人： Akio Izumi ,  Yasuhito Maki ,  Tadakuni Narabu ,  Maki Sato ,  Takaji Otsu ,  Katsuyuki Saito

IPC分类号： H01F7/06 ,  H01L21/28 ,  H01L21/8234 ,  H01L27/105 ,  H01L29/51

CPC分类号： H01L21/28202 ,  H01L21/8234 ,  H01L27/1057 ,  H01L29/513 ,  H01L29/518

摘要： A charge-coupled device has a multi-layer structure insulating layer is formed beneath a transfer electrode, floating electrodes and an electrode adjacent the floating electrodes so that pin hole phenomenon in a charge transfer section of the charge coupled device can be successfully prevented. On the other hand, a sole-layer structure insulating layer is formed beneath a gate electrode of a peripheral component so that a threshold voltage of the gate electrode of the peripheral component can be successfully controlled at a desired value.

摘要翻译： 电荷耦合器件具有在传输电极，浮置电极和邻近浮置电极的电极之下形成的多层结构绝缘层，从而可以成功地防止电荷耦合器件的电荷转移部分中的针孔现象。 另一方面，在周边部件的栅电极的下方形成底层结构绝缘层，使得能够成功地将外围部件的栅电极的阈值电压控制在期望值。

公开(公告)号：US5818075A

公开(公告)日：1998-10-06

申请号：US697178

申请日：1996-08-20

申请人： Seiichi Kawamoto ,  Yasuhito Maki ,  Tadakuni Narabu ,  Masahide Hirama

发明人： Seiichi Kawamoto ,  Yasuhito Maki ,  Tadakuni Narabu ,  Masahide Hirama

IPC分类号： H01L29/423 ,  H01L29/768 ,  H01L27/148

CPC分类号： H01L29/42396 ,  H01L29/76816

摘要： A charge transfer device comprising charge transfer means for transferring charges, a floating diffusion layer for accumulating the charges transferred from said charge transfer means, a floating gate electrode formed on said floating diffusion layer via an insulating layer, charge detection means connected to the floating gate electrode for outputting a voltage corresponding to an amount of charges accumulated in the floating diffusion layer, first precharge means connected to the floating gate electrode, the first precharge means starting precharging of the floating gate electrode responsive to transition of a first pulse voltage from a first state to a second state, the first precharge means terminating precharging of the floating gate electrode responsive to transition of the first pulse voltage from the second state to the first state, second precharge means connected to the floating diffusion layer, the second precharge means starting precharging of the floating diffusion layer responsive to transition of a second pulse voltage from a third state to a fourth state, the second precharge means terminating precharging of the floating diffusion layer responsive to transition of the second pulse voltage from the fourth state to the third state, first pulse supply means for supplying the first pulse voltage to the first precharge means, and second pulse supply means for supplying the second pulse voltage to the second precharge means, transition of the second pulse voltage from the third state to the fourth state being produced following transition of the first pulse voltage from the first state to the second state. In a preferred embodiment, transition of the first pulse voltage from the second state to the first state is produced following transition of the second pulse voltage from the fourth state to the third state.

摘要翻译： 一种电荷转移装置，包括用于转移电荷的电荷转移装置，用于累积从所述电荷转移装置转移的电荷的浮动扩散层，经由绝缘层形成在所述浮动扩散层上的浮栅，电荷检测装置，连接到浮置栅极 电极，用于输出对应于在浮动扩散层中累积的电荷量的电压，第一预充电装置连接到浮动栅电极，第一预充电装置响应于来自第一个的第一脉冲电压的第一脉冲电压的转变而开始对浮栅的预充电 状态到第二状态，第一预充电装置响应于第一脉冲电压从第二状态转变到第一状态来终止浮栅的预充电，连接到浮动扩散层的第二预充电装置，第二预充电装置开始预充电 的浮动扩散层r 响应于第二脉冲电压从第四状态转换到第三状态，第二预充电装置响应于第二脉冲电压从第四状态转换到第三状态来终止浮动扩散层的预充电，第一脉冲供应装置 将第一脉冲电压提供给第一预充电装置;以及第二脉冲供给装置，用于将第二脉冲电压提供给第二预充电装置，第二脉冲电压从第三状态到第四状态的转变在第一脉冲转变之后产生 电压从第一状态到第二状态。 在优选实施例中，第二脉冲电压从第四状态转换到第三状态之后产生从第二状态到第一状态的第一脉冲电压的转变。

公开(公告)号：US5539536A

公开(公告)日：1996-07-23

申请号：US33364

申请日：1993-03-18

申请人： Yasuhito Maki ,  Motoaki Abe ,  Tadakuni Narabu ,  Hideo Nomura

发明人： Yasuhito Maki ,  Motoaki Abe ,  Tadakuni Narabu ,  Hideo Nomura

IPC分类号： H04N1/028 ,  H04N5/341 ,  H04N5/361 ,  H04N5/372 ,  H04N5/376 ,  H04N5/335

CPC分类号： H04N3/1581

摘要： A linear sensor for sampling vertically opposed pixels of a plurality of vertically arranged sensor rows substantially at a time. A plurality of horizontal transfer registers and a plurality of shift gates are provided to oppose the plurality of sensor rows. A vertical transfer register is provided at one end of the plurality of horizontal transfer registers. In the vertical transfer register, the signal charges which have been transferred by the plurality of horizontal transfer registers are transferred sequentially in vertical direction. A charge/voltage converter unit is provided at the output of the vertical transfer register. The signal charges accumulated in the vertically opposed pixels are sequentially transferred to the charge/voltage converter unit in a repetitive manner.

摘要翻译： 一种线性传感器，用于基本上每次对多个垂直布置的传感器行的垂直相对的像素进行采样。 提供多个水平传送寄存器和多个移位门以与多个传感器行相对。 在多个水平传送寄存器的一端设置垂直传送寄存器。 在垂直传送寄存器中，由多个水平传送寄存器传送的信号电荷在垂直方向依次传送。 在垂直传输寄存器的输出端提供一个充电/电压转换器单元。 累积在垂直相对的像素中的信号电荷被重复地依次传送到电荷/电压转换器单元。

公开(公告)号：US5086440A

公开(公告)日：1992-02-04

申请号：US509207

申请日：1990-04-16

申请人： Tadakuni Narabu ,  Tetsuya Kondo ,  Yasuhito Maki ,  Katsunori Noguchi

发明人： Tadakuni Narabu ,  Tetsuya Kondo ,  Yasuhito Maki ,  Katsunori Noguchi

IPC分类号： G11C19/28 ,  G11C27/04

CPC分类号： G11C27/04 ,  G11C19/285

摘要： An input structure of CCD comprises a primary register having an input gate and a source region and an automatic biasing system which generates a feedback signal to be fed back to input of the primary register. The output of the automatic biasing system is connected to one of the input gate and the source of the primary register for supplying the feedback signal thereto for adjusting input bias level of the primary register. The other one of the input gate and the source is connected to an information signal input terminal to receive therefrom an information signal to be transferred therethrough.

公开(公告)号：US5210777A

公开(公告)日：1993-05-11

申请号：US509205

申请日：1990-04-16

申请人： Tadakuni Narabu ,  Tetsuya Kondo ,  Yasuhito Maki ,  Katsunori Noguchi

发明人： Tadakuni Narabu ,  Tetsuya Kondo ,  Yasuhito Maki ,  Katsunori Noguchi

IPC分类号： G11C19/28 ,  G11C27/04

CPC分类号： G11C19/285 ,  G11C27/04

摘要： A charge coupled device is provided with a first signal input path for supplying an information signal for transfer through a delay line, which contain an inverting amplifier, and a second signal input path which has no inverting amplifier. The first and second signal input paths are arranged in parallel to each other. The charge coupled device also has a switching means associated with the first and second signal input paths so as to selectively establishing connection between one of the first and second signal input paths and the delay line so that non-inverted and inverted information signals can be selectively supplied to the delay line.