公开(公告)号：US20110027980A1

公开(公告)日：2011-02-03

申请号：US12904181

申请日：2010-10-14

申请人： Shunpei YAMAZAKI ,  Yukie SUZUKI ,  Yasuyuki ARAI ,  Yoshitaka MORIYA ,  Kazuko IKEDA ,  Yoshifumi TANADA ,  Shuhei TAKAHASHI

发明人： Shunpei YAMAZAKI ,  Yukie SUZUKI ,  Yasuyuki ARAI ,  Yoshitaka MORIYA ,  Kazuko IKEDA ,  Yoshifumi TANADA ,  Shuhei TAKAHASHI

IPC分类号： H01L21/768

CPC分类号： H01L29/42368 ,  H01L21/28273 ,  H01L21/28282 ,  H01L21/84 ,  H01L27/12 ,  H01L27/1203 ,  H01L27/1214 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/13 ,  H01L29/42384 ,  H01L29/66757 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/78609 ,  H01L29/78618 ,  H01L29/7881

摘要： The semiconductor device has a semiconductor layer, a gate electrode which covers an end portion of the semiconductor layer, and an insulating layer for insulating the semiconductor layer and the gate electrode. The film thickness of the insulating layer which insulates a region where an end portion of the semiconductor layer and the gate electrode overlap each other is thicker than the film thickness of the insulating layer which covers the central portion of the semiconductor layer.

摘要翻译： 半导体器件具有半导体层，覆盖半导体层的端部的栅电极和用于使半导体层和栅电极绝缘的绝缘层。 使半导体层的端部与栅电极重叠的区域绝缘的绝缘层的膜厚比覆盖半导体层的中心部的绝缘层的膜厚厚。

公开(公告)号：US20110180811A1

公开(公告)日：2011-07-28

申请号：US13081519

申请日：2011-04-07

申请人： Yukie SUZUKI ,  Yasuyuki ARAI ,  Shunpei YAMAZAKI

发明人： Yukie SUZUKI ,  Yasuyuki ARAI ,  Shunpei YAMAZAKI

IPC分类号： H01L29/161 ,  H01L29/20 ,  H01L29/786

CPC分类号： H01Q9/0407 ,  G06K19/07745 ,  G06K19/07749 ,  G06K19/07786 ,  H01L23/66 ,  H01L24/17 ,  H01L24/32 ,  H01L24/73 ,  H01L27/088 ,  H01L2223/6677 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/16265 ,  H01L2224/32225 ,  H01L2224/32265 ,  H01L2224/73204 ,  H01L2924/00014 ,  H01L2924/01025 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/07811 ,  H01L2924/09701 ,  H01L2924/12041 ,  H01L2924/12044 ,  H01L2924/13091 ,  H01L2924/3011 ,  H01M10/0436 ,  H01M10/465 ,  H01M2220/30 ,  H01Q1/2208 ,  H01Q1/2283 ,  H01Q23/00 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： It is an object to provide a wireless chip which can increase a mechanical strength, and a wireless chip with a high durability. A wireless chip includes a transistor including a field-effect transistor, an antenna including a dielectric layer sandwiched between conductive layers, and a conductive layer connecting the chip and the antenna. Further, a wireless chip includes a transistor including a field-effect transistor, an antenna including a dielectric layer sandwiched between conductive layers, a sensor device, a conductive layer connecting the chip and the antenna, and a conductive layer connecting the chip and the sensor device. Moreover, a wireless chip includes a transistor including a field-effect transistor, an antenna including a dielectric layer sandwiched between conductive layers, a battery, a conductive layer connecting the chip and the antenna, and a conductive layer connecting the chip and the battery.

摘要翻译： 本发明的目的是提供一种能够提高机械强度的无线芯片，以及具有高耐久性的无线芯片。 无线芯片包括具有场效应晶体管的晶体管，包含夹在导电层之间的电介质层的天线以及连接芯片和天线的导电层。 此外，无线芯片包括具有场效应晶体管的晶体管，包含夹在导电层之间的电介质层的天线，传感器装置，连接芯片和天线的导电层以及连接芯片和传感器的导电层 设备。 此外，无线芯片包括具有场效应晶体管的晶体管，包含夹在导电层之间的电介质层的天线，电池，连接芯片和天线的导电层以及连接芯片和电池的导电层。

公开(公告)号：US20120193694A1

公开(公告)日：2012-08-02

申请号：US13445262

申请日：2012-04-12

申请人： Yukie SUZUKI ,  Yasuyuki ARAI ,  Shunpei YAMAZAKI

发明人： Yukie SUZUKI ,  Yasuyuki ARAI ,  Shunpei YAMAZAKI

IPC分类号： H01L29/786

CPC分类号： H01L27/1214 ,  H01L21/84 ,  H01L23/49855 ,  H01L27/1255 ,  H01L27/13 ,  H01L29/78621 ,  H01L29/78675 ,  H01L2223/6677 ,  H01L2924/0002 ,  H01Q1/22 ,  H01Q1/2283 ,  H01Q9/0407 ,  H01Q9/27 ,  H01L2924/00

摘要： The present invention provides a wireless chip having high mechanical strength. Moreover, the present invention also provides a wireless chip which can prevent an electric wave from being blocked. In a wireless chip of the present invention, a layer having a thin film transistor formed over an insulating substrate is fixed to an antenna by an anisotropic conductive adhesive, and the thin film transistor is connected to the antenna. The antenna has a dielectric layer, a first conductive layer, and a second conductive layer; the first conductive layer and the second conductive layer has the dielectric layer therebetween; the first conductive layer serves as a radiating electrode; and the second electrode serves as a ground contact body.

摘要翻译： 本发明提供一种机械强度高的无线芯片。 此外，本发明还提供一种能够防止电波被阻挡的无线芯片。 在本发明的无线芯片中，通过各向异性导电粘合剂将具有形成在绝缘基板上的薄膜晶体管的层固定到天线，并且薄膜晶体管连接到天线。 天线具有电介质层，第一导电层和第二导电层; 第一导电层和第二导电层之间具有介电层; 第一导电层用作辐射电极; 第二电极用作接地体。

公开(公告)号：US20100307559A1

公开(公告)日：2010-12-09

申请号：US12793329

申请日：2010-06-03

申请人： Shunpei YAMAZAKI ,  Yukie SUZUKI ,  Kazuo NISHI ,  Yasuyuki ARAI

发明人： Shunpei YAMAZAKI ,  Yukie SUZUKI ,  Kazuo NISHI ,  Yasuyuki ARAI

IPC分类号： H01L31/042 ,  H01L31/18

CPC分类号： H01L31/1896 ,  H01L31/043 ,  H01L31/046 ,  H01L31/0465 ,  H01L31/048 ,  H01L2924/0002 ,  H01L2924/09701 ,  H02S40/38 ,  Y02E10/50 ,  H01L2924/00

摘要： An object is to provide a photoelectric conversion device whose mechanical strength is increased without complicating a manufacturing process. The photoelectric conversion device includes a first cell having a photoelectric conversion function, a second cell having a photoelectric conversion function, and a structure body including a fibrous body which firmly attaches the first cell and the second cell. As a result, p-i-n junctions are bonded with the structure body in which the fibrous body is impregnated with an organic resin, which is a so-called prepreg. Thus, a photoelectric conversion device whose mechanical strength is increased can be realized while the manufacturing cost is reduced.

摘要翻译： 本发明的目的是提供一种其机械强度增加而不会使制造过程复杂化的光电转换装置。 光电转换装置包括具有光电转换功能的第一单元，具有光电转换功能的第二单元，以及包括牢固地附接第一单元和第二单元的纤维体的结构体。 结果，p-i-n结与其中纤维体被浸渍有机树脂的结构体结合，所述有机树脂是所谓的预浸料。 因此，可以实现机械强度提高的光电转换装置，同时降低制造成本。

公开(公告)号：US20110039402A1

公开(公告)日：2011-02-17

申请号：US12848594

申请日：2010-08-02

申请人： Shunpei YAMAZAKI ,  Yukie SUZUKI ,  Yasuyuki ARAI ,  Takayuki INOUE ,  Erumu KIKUCHI

发明人： Shunpei YAMAZAKI ,  Yukie SUZUKI ,  Yasuyuki ARAI ,  Takayuki INOUE ,  Erumu KIKUCHI

IPC分类号： H01L21/20

CPC分类号： H01L21/02595 ,  C23C16/24 ,  C23C16/4404 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/5096 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32541 ,  H01L21/02532 ,  H01L21/0262 ,  H01L29/04 ,  H01L29/66765 ,  H01L29/78696

摘要： A microcrystalline semiconductor film with high crystallinity is manufactured. In addition, a thin film transistor with excellent electric characteristics and high reliability, and a display device including the thin film transistor are manufactured with high productivity. A deposition gas containing silicon or germanium is introduced from an electrode including a plurality of projecting portions provided in a treatment chamber of a plasma CVD apparatus, glow discharge is caused by supplying high-frequency power, and thereby crystal particles are formed over a substrate, and a microcrystalline semiconductor film is formed over the crystal particles by a plasma CVD method.

摘要翻译： 制造具有高结晶度的微晶半导体膜。 此外，以高生产率制造具有优异的电特性和高可靠性的薄膜晶体管，以及包括薄膜晶体管的显示装置。 从设置在等离子体CVD装置的处理室中的多个突出部的电极引入含有硅或锗的沉积气体，通过供给高频电力而产生辉光放电，由此在基板上形成晶体粒子， 并且通过等离子体CVD法在晶体颗粒上形成微晶半导体膜。

公开(公告)号：US20100238391A1

公开(公告)日：2010-09-23

申请号：US12795040

申请日：2010-06-07

申请人： Shunpei YAMAZAKI ,  Yukie SUZUKI ,  Hideaki KUWABARA ,  Hajime KIMURA

发明人： Shunpei YAMAZAKI ,  Yukie SUZUKI ,  Hideaki KUWABARA ,  Hajime KIMURA

IPC分类号： G02F1/136

CPC分类号： G02F1/1368 ,  G02F1/133345 ,  G02F1/1339 ,  G02F1/134309 ,  G02F1/136286 ,  H01L27/1214 ,  H01L27/1222 ,  H01L27/1288 ,  H01L29/04 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/78678 ,  H01L29/78696

摘要： A method of manufacturing, with high mass productivity, liquid crystal display devices having highly reliable thin film transistors with excellent electric characteristics is provided. In a liquid crystal display device having an inverted staggered thin film transistor, the inverted staggered thin film transistor is formed as follows: a gate insulating film is formed over a gate electrode; a microcrystalline semiconductor film which functions as a channel formation region is formed over the gate insulating film; a buffer layer is formed over the microcrystalline semiconductor film; a pair of source and drain regions are formed over the buffer layer; and a pair of source and drain electrodes are formed in contact with the source and drain regions so as to expose a part of the source and drain regions.

摘要翻译： 提供了具有高质量生产率的具有优异的电特性的具有高可靠性薄膜晶体管的液晶显示装置的方法。 在具有反交错薄膜晶体管的液晶显示装置中，反交错薄膜晶体管形成如下：在栅电极上形成栅极绝缘膜; 在栅绝缘膜上形成用作沟道形成区的微晶半导体膜; 在微晶半导体膜上形成缓冲层; 在缓冲层上形成一对源区和漏区; 并且形成与源区和漏区接触的一对源电极和漏电极，以便露出源区和漏区的一部分。

公开(公告)号：US20120086012A1

公开(公告)日：2012-04-12

申请号：US13332786

申请日：2011-12-21

申请人： Shunpei YAMAZAKI ,  Yukie SUZUKI ,  Hideaki KUWABARA ,  Hajime KIMURA

发明人： Shunpei YAMAZAKI ,  Yukie SUZUKI ,  Hideaki KUWABARA ,  Hajime KIMURA

IPC分类号： H01L29/786

CPC分类号： G02F1/1368 ,  G02F1/133345 ,  G02F1/1339 ,  G02F1/134309 ,  G02F1/136286 ,  H01L27/1214 ,  H01L27/1222 ,  H01L27/1288 ,  H01L29/04 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/78678 ,  H01L29/78696

摘要： A method of manufacturing, with high mass productivity, liquid crystal display devices having highly reliable thin film transistors with excellent electric characteristics is provided. In a liquid crystal display device having an inverted staggered thin film transistor, the inverted staggered thin film transistor is formed as follows: a gate insulating film is formed over a gate electrode; a microcrystalline semiconductor film which functions as a channel formation region is formed over the gate insulating film; a buffer layer is formed over the microcrystalline semiconductor film; a pair of source and drain regions are formed over the buffer layer; and a pair of source and drain electrodes are formed in contact with the source and drain regions so as to expose a part of the source and drain regions.

摘要翻译： 提供了具有高质量生产率的具有优异的电特性的具有高可靠性薄膜晶体管的液晶显示装置的方法。 在具有反交错薄膜晶体管的液晶显示装置中，反交错薄膜晶体管形成如下：在栅电极上形成栅极绝缘膜; 在栅绝缘膜上形成用作沟道形成区的微晶半导体膜; 在微晶半导体膜上形成缓冲层; 在缓冲层上形成一对源区和漏区; 并且形成与源区和漏区接触的一对源电极和漏电极，以便露出源区和漏区的一部分。

公开(公告)号：US20100307557A1

公开(公告)日：2010-12-09

申请号：US12788862

申请日：2010-05-27

申请人： Shunpei YAMAZAKI ,  Yukie SUZUKI ,  Kazuo NISHI

发明人： Shunpei YAMAZAKI ,  Yukie SUZUKI ,  Kazuo NISHI

IPC分类号： H01L31/042 ,  H01L31/18

CPC分类号： H01L31/076 ,  B60T1/10 ,  H01L31/03685 ,  H01L31/03926 ,  H01L31/043 ,  H01L31/048 ,  H01L31/0488 ,  H01L31/0687 ,  H01L2924/0002 ,  H01L2924/09701 ,  Y02E10/544 ,  Y02E10/545 ,  Y02E10/548 ,  Y02E10/549 ,  Y02P70/521 ,  H01L2924/00

摘要： A multi junction photoelectric conversion device that can be manufactured by a simple method is provided. In addition, a photoelectric conversion device whose mechanical strength is increased without complicating a manufacturing process is provided. A photoelectric conversion device includes a first cell having a photoelectric conversion function, a second cell having a photoelectric conversion function, and a structure body including a fibrous body, which firmly attaches and electrically connects the first cell and the second cell to each other. Accordingly, a multi-junction photoelectric conversion device in which semiconductor junctions are connected in series and sufficient electrical connection between p-i-n junctions is ensured can be provided.

摘要翻译： 提供可以通过简单的方法制造的多结光电转换装置。 此外，提供了机械强度提高而不使制造过程复杂化的光电转换装置。 光电转换装置包括具有光电转换功能的第一单元，具有光电转换功能的第二单元和包括纤维体的结构体，其将第一单元和第二单元彼此牢固地连接并电连接。 因此，可以确保其中半导体接头串联连接并且在p-i-n结之间具有足够的电连接的多结光电转换装置。

公开(公告)号：US20090206342A1

公开(公告)日：2009-08-20

申请号：US12366067

申请日：2009-02-05

申请人： Kunio HOSOYA ,  Saishi FUJIKAWA ,  Yukie SUZUKI

发明人： Kunio HOSOYA ,  Saishi FUJIKAWA ,  Yukie SUZUKI

IPC分类号： H01L29/786

CPC分类号： H01L27/0296 ,  H01L27/124 ,  H01L27/1248

摘要： An object is to reduce an occupied area of a protection circuit. Another object is to increase the reliability of a display device including the protection circuit. The protection circuit includes a first wiring over a substrate, an insulating film over the first wiring, and a second wiring over the insulating film.

摘要翻译： 目的是减少保护电路的占用面积。 另一个目的是提高包括保护电路的显示装置的可靠性。 保护电路包括在基板上的第一布线，第一布线上的绝缘膜和绝缘膜上的第二布线。