摘要:
An acoustic wave device includes a piezoelectric substrate, an IDT electrode provided on the piezoelectric substrate, a dielectric layer provided so as to cover the IDT electrode, and a first stress relaxation layer provided on the dielectric layer. Furthermore, the acoustic wave device includes an extraction electrode connected to the IDT electrode and extracted onto the first stress relaxation layer, and a bump provided on the extraction electrode. An elastic modulus of the first stress relaxation layer is smaller than that of the dielectric layer.
摘要:
The present invention provides a surface acoustic wave filter and others that reduce ripples in a reception frequency band while ensuring sufficient attenuation in a transmission frequency band. A surface acoustic wave filter includes a surface acoustic wave resonator that allows a reception frequency band to pass while attenuating a transmission frequency band, and a surface acoustic wave filter connected in series with the surface acoustic wave resonator to allow the reception frequency band to pass while attenuating the transmission frequency band. An inductor is connected to one end of the surface acoustic wave resonator, a connection point between the surface acoustic wave filter and the surface acoustic wave resonator, and/or the other end of the surface acoustic wave resonator.
摘要:
An acoustic wave element includes a piezoelectric body, first and second interdigital transducer (IDT) electrodes provided on an upper surface of the piezoelectric body, and a first dielectric layer provided on the upper surface of the piezoelectric body to cover the first and second IDT electrodes. The first dielectric layer has a first part directly above the first IDT electrode and a second part directly above the second IDT electrode. The height of an upper surface of the second part of the first dielectric layer is larger than the height of an upper surface of the first part of the first dielectric layer. This acoustic wave element has a preferable temperature characteristic and electromechanical coupling factor.
摘要:
An acoustic wave device includes a piezoelectric substrate, an IDT electrode provided on the piezoelectric substrate, a dielectric layer provided so as to cover the IDT electrode, and a first stress relaxation layer provided on the dielectric layer. Furthermore, the acoustic wave device includes an extraction electrode connected to the IDT electrode and extracted onto the first stress relaxation layer, and a bump provided on the extraction electrode. An elastic modulus of the first stress relaxation layer is smaller than that of the dielectric layer.
摘要:
An acoustic wave element includes a piezoelectric body, first and second interdigital transducer (IDT) electrodes provided on an upper surface of the piezoelectric body, and a first dielectric layer provided on the upper surface of the piezoelectric body to cover the first and second IDT electrodes. The first dielectric layer has a first part directly above the first IDT electrode and a second part directly above the second IDT electrode. The height of an upper surface of the second part of the first dielectric layer is larger than the height of an upper surface of the first part of the first dielectric layer. This acoustic wave element has a preferable temperature characteristic and electromechanical coupling factor,
摘要:
A resonator ladder type surface acoustic wave filter, has an input electrical terminal, an output electrical terminal, and a grounding terminal being formed on a piezoelectric substrate, a series arm surface acoustic wave resonator and a parallel arm surface acoustic wave resonator, each constructed from an interdigital transducer for exciting a surface acoustic wave, being formed between said input electrical terminal and said output electrical terminal, and when the center frequency of said resonator ladder type surface acoustic wave filter is denoted by fc, and capacitance determined by the number of electrode finger pairs and electrode finger overlap width in said interdigital transducer of said parallel arm surface acoustic wave resonator is denoted by Cp (fc: center frequency [GHz], Cp: capacitance of the interdigital transducer of the parallel arm surface acoustic wave resonator), capacitance C of multiples of said parallel arm surface acoustic wave resonator, connected to the same node between said input electrical terminal and said output electrical terminal, always satisfies the relationfc.multidot.Cp
摘要:
The present invention relates to an electronic part used for mobile communications apparatuses and the like, and more particularly to an electronic part, such as an acoustic surface-wave device, a piezoelectric ceramic device or the like, which requires an oscillation space near the surface of the functional device chip thereof, and a method of production thereof. With this method, a space retainer for forming a sealed space at the functional portion of the chip can be hermetically sealed and have high moisture resistance, and the process of forming the space retainer can be carried out easily.The electronic part of the present invention comprises a functional device chip, a space retainer for forming a sealed space at the functional portion of the chip, a circuit substrate to which the chip is secured, electrode interconnection portions for establishing electric connection between the chip and the circuit substrate, and a sealing resin for covering and sealing at least the space retainer, wherein the space retainer comprises a support layer made of a synthetic resin film, provided with an opening enclosing the functional portion and joined onto the main surface, and a cover formed and joined onto the support layer so as to cover the functional portion and form a sealed space between the cover and the functional portion.
摘要:
A balanced-type surface acoustic wave filter is provided which can attain a balanced-type of high frequency circuit without connecting a balance-unbalanced conversion circuit. A substrate of tantalic acid lithium substrate with 36 degrees rotation, Y cut, and X propagation is used, and aluminium is used for electrode to form resonators. Then, two resonators in a serial arm and two resonators in a parallel arm are connected in the form of symmetry and lattice to form a balanced-type surface acoustic wave filter. In this configuration, antiresonance frequency in the serial arms and resonance frequency in the parallel arms are substantially equal to each other.
摘要:
In a surface acoustic wave (SAW) filter, on a 36.degree. Y-cut X-propagation lithium tantalate substrate, series branch SAW resonators, which are connected in series between an input terminal and an output terminal, and parallel branch SAW resonators, which are connected between respective pairs of the series branch resonators by wirings and which are grounded, are provided. Two series branch resonators and one parallel branch resonator are connected in a T shape, so as to form a fundamental unit. In the SAW filter, three fundamental units are serially connected. An interdigital transducer (IDT) included in each resonator is made of a metal film containing aluminum as the main component. The thickness of the metal film is in the range of 8% to 10% of the electrode pitch of the IDT of the parallel branch resonator.
摘要:
A Q-factor of a resonator at a high frequency is improved. An insertion loss of a filter using such a resonator and steepness of the filter are improved. A plurality of surface acoustic wave resonators including an interdigital transducer and reflecting electrodes provided on both sides thereof are connected in parallel on a piezoelectric substrate. Resonance frequencies of the surface acoustic wave resonators are rendered equal among all the resonators connected in parallel. In this way, Q-factor of resonance can be improved. A surface acoustic wave filter using such surface acoustic wave resonators is formed in order to improve the insertion loss and the steepness.