摘要:
Making it possible to execute the detection of the particles floating inside a processing chamber with the use of an optical system including one observing window and one unit (An object of the present invention is, by using an optical system including one observing window and one unit, to make it possible to execute the detection of the particles floating inside a processing chamber.) Also, in order to be able to detect exceedingly feeble particle scattered-lights with a high-accuracy, when performing a desired thin-film forming or thin-film processing treatment toward a to-be-processed target inside the processing chamber, the following method is employed: First, the irradiation with a beam is executed into the processing chamber through the observing window. Here, the beam is P-polarized and is intensity-modulated with a frequency differing from an exciting source's frequency and its integer-multiples, and the observing window has an inclination that forms Brewster angle toward the P-polarized incident beam. Next, backward scattered-lights scattered by the particles inside the processing chamber are received and image-photographed at a detecting optical system through the above-described one and the same observing window. Moreover, the above-described frequency component and a wavelength component of the above-described intensity-modulated beam are detected out of the received signals. Finally, the detected components and the image-photographed image information are used so as to judge the number, the size, and the distribution of the particles.
摘要:
To measure positions of a plurality of thin film magnetic head elements formed in a line on a bar, the quantity of positions of samples in the bar is estimated from the magnetic head elements the amount of deviation in position of the next element, and the distance between the elements are obtained, and the amount of deviation and distance are estimated by a primary approximate linear or several-order approximate curve. The estimated amount and the distance between the elements are moved simultaneously, and an image formed by a lens optical system is photo-converted to an image signal, and dimensions are computed. The conversion step is carried out immediately after movement of the next element and is continuously repeated, and the computing step is processed in parallel with the conversation step.
摘要:
A method of measuring variation in dimensions and alignment error of thin film magnetic heads formed on a raw bar cut-off from a substrate is provided. Such method comprises illuminating a MR element and a resistance detector element which is formed for monitoring a lapping process, both of which are formed on the raw bar, with illuminating light whose wavelength is 300 nm or less; forming an image by imaging light reflected from the elements; and converting the image to an image signal through photoelectric conversion so as to detect variation in dimensions of the MR element and the resistance detector element formed on the raw bar, and alignment error between the MR element and the resistance detector element with a high degree of accuracy.
摘要:
There is provided a pattern inspection device for a substrate surface which can inspect a substrate including a pattern whose size is equal to or smaller than light resolution limit at high speed. The pattern inspection device for the substrate surface includes: a near-field optical head 101 having a fine repetitive pattern; a θ driving unit 311 of scanning an inspected substrate 900 relatively to the near-field optical head 101; a space holding mechanism of holding a space between the near-field optical head 101 and the inspected substrate 900 constant; alight source 110 of irradiating light to the near-field optical head 101; a detection system 201 of detecting an intensity of scattered light generated by interaction between the fine repetitive pattern on the near-field optical head 101 and a fine pattern on a surface of the inspected substrate 900; and a signal processing unit 321 of inspecting the fine pattern on the inspected substrate 900 based on an output of the detection system 201.
摘要:
There is provided a pattern inspection device for a substrate surface which can inspect a substrate including a pattern whose size is equal to or smaller than light resolution limit at high speed. The pattern inspection device for the substrate surface includes: a near-field optical head 101 having a fine repetitive pattern; a θ driving unit 311 of scanning an inspected substrate 900 relatively to the near-field optical head 101; a space holding mechanism of holding a space between the near-field optical head 101 and the inspected substrate 900 constant; alight source 110 of irradiating light to the near-field optical head 101; a detection system 201 of detecting an intensity of scattered light generated by interaction between the fine repetitive pattern on the near-field optical head 101 and a fine pattern on a surface of the inspected substrate 900; and a signal processing unit 321 of inspecting the fine pattern on the inspected substrate 900 based on an output of the detection system 201.
摘要:
The invention has a function of preparing a data base for a relation between a defect shape and an arrangement for the optical system capable of detecting the shape at high sensitivity and automatically adjusting the arrangement for the optical system. As the method of preparing the data base, a method of using optical simulation or an experimental method of using a sample having an optical shape is applied. A pinhole position and a beam size are adjusted automatically so as to attain the optimal arrangement for the optical system to an inputted defect shape based on the data base.
摘要:
In order to realize individually and easily optimization of exposure conditions such as exposure dose and focus by photolithography in a production process of semiconductor devices, the present invention is such that: light is radiated onto a pattern on a semiconductor wafer; by an optical system that detects information on a pattern shape using scattered light by its reflection, waveforms of an FEM sample wafer having a plurality of shape deformation patterns prepared in advance are detected and stored; one or more characteristic points on a spectral waveform generated in association with a pattern change is recorded; and a variation model of the characteristic points is obtained. As to a pattern to be measured, a spectral waveform is detected in the same manner as that described above, and deviations (exposure dose deviation and focus deviation) of the formation conditions are estimated from a displacement of the characteristic points on the waveform using the variation model. Thereby, the exposure dose and focus can be independently fed back and the process control can be achieved with high accuracy.
摘要:
A method for automatic focusing and three dimensional profile detection and an apparatus for automatic focusing and three dimensional profile detection have the purpose of detecting a three dimensional profile of the state of mounting of parts or soldering on a board without the affects of warp, even if the board of the detection object is warped, as if the surface of the board were on a flat plane. The board surface height is detected in a plurality of windows corresponding to stage scanning regions from a three dimensional profile signal of the part-mounted board detected by a height detection optical system. The board height or inclination in the next window is forecasted from the board surface height and the control history of stage height in the already-detected plurality of windows. Based on the forecasted board surface height or inclination, the speed or height in the Z direction of a Z-stage is controlled according to a feedforward method with scanning so as that the board surface and the focal plane of the height detection optical system are made coincident.
摘要:
In an optical inspection for patterned media for hard disks, a pattern inspection device is provided for inspecting patterns without being susceptible to variations in film thickness and film quality of an underlying film, the device includes optical characteristics detection means for detecting optical characteristics of multilayers by processing, upon the reflected light being dispersed and detected by the spectroscopic detection means, the reflected light from a non-patterned region on the substrate, and processing a detection signal corresponding to, and detecting optical characteristics of, the reflected light from the patterns including the multilayers; and pattern inspection means for inspecting the patterns formed on the multilayers, by viewing, upon the detection of the optical characteristics by the optical characteristics detection means, information on the optical characteristics of the reflected light from the multilayers, and processing information on the optical characteristics of the reflected light from the patterns including the multilayers.
摘要:
In spectral detection for detecting the shape of repeating pattern structures uniformly formed on a surface of a test object, it is advantageous to use light having a wide wavelength range in a short wavelength region. However, it is not easy to realize a relatively simple optical system capable of spectral detection of light having a wide wavelength range in a short wavelength region, namely in ultraviolet region. The present invention provides an inspection apparatus for detecting pattern defects. The inspection apparatus includes a spectral detection optical system capable of spectral detection of light in a wavelength range from deep ultraviolet to near infrared. The spectral detection optical system includes a spatially partial mirror serving as a half mirror and a reflecting objective provided with an aperture stop for limiting the angle and direction of light to be applied to and reflected by a test object.