公开(公告)号：US08440050B2

公开(公告)日：2013-05-14

申请号：US12372156

申请日：2009-02-17

申请人： Manabu Iwata ,  Hiroyuki Nakayama ,  Kenji Masuzawa ,  Masanobu Honda

发明人： Manabu Iwata ,  Hiroyuki Nakayama ,  Kenji Masuzawa ,  Masanobu Honda

IPC分类号： C23F1/00 ,  H01L21/306 ,  G06F19/00

CPC分类号： H01J37/32027 ,  H01J37/32091 ,  H01J37/32165

摘要： A plasma processing apparatus includes a vacuum evacuable processing chamber, a first electrode divided into an outer electrode and an inner electrode, a second electrode, a first and a second high frequency power application unit for applying to the second electrode a first and a second high frequency power having a relatively high frequency and a relatively low frequency, respectively, a first and a second DC voltage application circuit apply a DC voltage to the outer and the inner electrode, respectively, and a processing gas supply unit. A space between the first electrode and the second electrode serves as a plasma generation space, and frequency-impedance characteristics of the outer electrode are set such that the impedance increases at the frequency of the second high frequency power and decreases at the frequency of the first high frequency power as the DC voltage applied to the outer electrode increases.

摘要翻译： 等离子体处理装置包括真空排气处理室，分为外部电极和内部电极的第一电极，第二电极，第一和第二高频电力施加单元，用于向第二电极施加第一和第二高电平 第一和第二直流电压施加电路分别对外电极和内电极分别施加直流电压和处理气体供给单元。 第一电极和第二电极之间的空间用作等离子体产生空间，外部电极的频率阻抗特性被设定为使得阻抗在第二高频功率的频率下增加，并且在第一 随着施加到外部电极的DC电压的增加，高频功率增加。

公开(公告)号：US08303834B2

公开(公告)日：2012-11-06

申请号：US12411953

申请日：2009-03-26

申请人： Masanobu Honda ,  Kenji Masuzawa ,  Hiroyuki Nakayama ,  Manabu Iwata ,  Manabu Sato ,  Kazuki Narishige

发明人： Masanobu Honda ,  Kenji Masuzawa ,  Hiroyuki Nakayama ,  Manabu Iwata ,  Manabu Sato ,  Kazuki Narishige

IPC分类号： B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00

CPC分类号： H01J37/32027 ,  H01J37/32091

摘要： A plasma processing apparatus includes an inner upper electrode provided to face a lower electrode mounting thereon a substrate, an outer upper electrode provided in a ring shape at a radially outside of the inner upper electrode and electrically isolated from the inner upper electrode in a vacuum evacuable processing chamber and a processing gas supply unit for supplying a processing gas into a processing space between the inner and the outer upper electrode and the lower electrode. A radio frequency (RF) power supply unit is also provide to apply a RF power to the lower electrode or the inner and the outer upper electrode to generate a plasma of the processing gas by RF discharge. A first and a second DC power supply unit are provided to apply a first and a second variable DC voltage to the inner upper electrode, respectively.

摘要翻译： 一种等离子体处理装置，包括：内部上部电极，其设置在其上安装有基板的下部电极;外部上部电极，其在所述内部上部电极的径向外侧设置成环状，并且在真空抽真空中与所述内部上部电极电隔离 处理室和处理气体供应单元，用于将处理气体供应到内外电极和下电极之间的处理空间中。 射频（RF）电源单元还提供向下电极或内外电极施加RF功率以通过RF放电产生处理气体的等离子体。 提供第一和第二直流电源单元，以分别向内部上部电极施加第一和第二可变直流电压。

公开(公告)号：US20090242515A1

公开(公告)日：2009-10-01

申请号：US12411953

申请日：2009-03-26

申请人： Masanobu Honda ,  Kenji Masuzawa ,  Hiroyuki Nakayama ,  Manabu Iwata ,  Manabu Sato ,  Kazuki Narishige

发明人： Masanobu Honda ,  Kenji Masuzawa ,  Hiroyuki Nakayama ,  Manabu Iwata ,  Manabu Sato ,  Kazuki Narishige

IPC分类号： B44C1/22 ,  C23F1/02

CPC分类号： H01J37/32027 ,  H01J37/32091

摘要： A plasma processing apparatus includes an inner upper electrode provided to face a lower electrode mounting thereon a substrate, an outer upper electrode provided in a ring shape at a radially outside of the inner upper electrode and electrically isolated from the inner upper electrode in a vacuum evacuable processing chamber and a processing gas supply unit for supplying a processing gas into a processing space between the inner and the outer upper electrode and the lower electrode. A radio frequency (RF) power supply unit is also provide to apply a RF power to the lower electrode or the inner and the outer upper electrode to generate a plasma of the processing gas by RF discharge. A first and a second DC power supply unit are provided to apply a first and a second variable DC voltage to the inner upper electrode, respectively.

摘要翻译： 一种等离子体处理装置，包括：内部上部电极，其设置在其上安装有基板的下部电极;外部上部电极，其在所述内部上部电极的径向外侧设置成环状，并且在真空抽真空中与所述内部上部电极电隔离 处理室和处理气体供应单元，用于将处理气体供应到内外部上电极和下电极之间的处理空间中。 射频（RF）电源单元还提供向下电极或内外电极施加RF功率以通过RF放电产生处理气体的等离子体。 提供第一和第二直流电源单元，以分别向内部上部电极施加第一和第二可变直流电压。

公开(公告)号：US20090242133A1

公开(公告)日：2009-10-01

申请号：US12407109

申请日：2009-03-19

申请人： Hiroyuki Nakayama ,  Masanobu Honda ,  Kenji Masuzawa ,  Manabu Iwata

发明人： Hiroyuki Nakayama ,  Masanobu Honda ,  Kenji Masuzawa ,  Manabu Iwata

IPC分类号： C23F1/08

CPC分类号： H01J37/32165 ,  H01J37/32091 ,  H01J37/32541

摘要： An electrode structure capable of adequately increasing an electron density in a processing space at a part facing a circumferential edge portion of a substrate. In a processing chamber of a substrate processing apparatus that performs RIE processing on a wafer, an upper electrode of the electrode structure is disposed to face the wafer placed on a susceptor inside the processing chamber. The upper electrode includes an inner electrode facing a central portion of the wafer and an outer electrode facing the circumferential edge portion of the wafer. The inner and outer electrodes are connected with first and second DC power sources, respectively. The outer electrode has its first secondary electron emission surface extending parallel to the wafer and its second secondary electron emission surface obliquely extending relative to the first secondary electron emission surface.

摘要翻译： 一种电极结构，其能够在面向基板的周缘部的部分处适当地增加处理空间中的电子密度。 在对晶片进行RIE处理的基板处理装置的处理室中，设置电极结构体的上部电极，使其位于处理室内的基座上。 上电极包括面对晶片的中心部分的内电极和面对晶片周缘部分的外电极。 内电极和外电极分别与第一和第二直流电源连接。 外部电极具有平行于晶片延伸的第一二次电子发射表面及其相对于第一二次电子发射表面倾斜延伸的第二二次电子发射表面。

公开(公告)号：US20110048453A1

公开(公告)日：2011-03-03

申请号：US12873458

申请日：2010-09-01

申请人： Masanobu Honda ,  Hidetoshi Hanaoka ,  Taichi Hirano ,  Takanori Mimura ,  Manabu Iwata ,  Taketoshi Okajo

发明人： Masanobu Honda ,  Hidetoshi Hanaoka ,  Taichi Hirano ,  Takanori Mimura ,  Manabu Iwata ,  Taketoshi Okajo

IPC分类号： C25F5/00

CPC分类号： C23C16/4405 ,  H01J37/32862

摘要： Provided is a chamber cleaning method capable of efficiently removing a CF-based shoulder deposit containing Si and Al deposited on an outer periphery of an ESC. A mixed gas of an O2 gas and a F containing gas is supplied toward an outer periphery 24a of an ESC 24 at a pressure ranging from about 400 mTorr to about 800 mTorr; plasma generated from the mixed gas is irradiated onto the outer periphery 24a of the ESC 24; an O2 single gas as a mask gas is supplied to the top surface of ESC 24 except the outer periphery 24a; and the shoulder deposit 50 adhered to the outer periphery 24a is decomposed and removed while preventing the top surface of ESC 24 except the outer periphery 24a from being exposed to a F radical.

摘要翻译： 提供一种能够有效地除去沉积在ESC外周上的含有Si和Al的CF系肩层沉积物的室清洗方法。 在约400mTorr至约800mTorr的压力下，向ESC24的外周边24a供应O 2气体和F气体的混合气体; 从混合气体产生的等离子体照射到ESC24的外周24a上; 作为掩模气体的O 2单体气体除外周边24a供给到ESC24的上表面; 并且附着在外周24a上的肩部沉积物50被分解除去，同时防止除了外周边24a之外的ESC 24的顶面暴露于F基。

公开(公告)号：US08999068B2

公开(公告)日：2015-04-07

申请号：US12873458

申请日：2010-09-01

申请人： Masanobu Honda ,  Hidetoshi Hanaoka ,  Taichi Hirano ,  Takanori Mimura ,  Manabu Iwata ,  Taketoshi Okajo

发明人： Masanobu Honda ,  Hidetoshi Hanaoka ,  Taichi Hirano ,  Takanori Mimura ,  Manabu Iwata ,  Taketoshi Okajo

IPC分类号： C23C16/44 ,  H01J37/32

CPC分类号： C23C16/4405 ,  H01J37/32862

摘要： Provided is a chamber cleaning method capable of efficiently removing a CF-based shoulder deposit containing Si and Al deposited on an outer periphery of an ESC. A mixed gas of an O2 gas and a F containing gas is supplied toward an outer periphery 24a of an ESC 24 at a pressure ranging from about 400 mTorr to about 800 mTorr; plasma generated from the mixed gas is irradiated onto the outer periphery 24a of the ESC 24; an O2 single gas as a mask gas is supplied to the top surface of ESC 24 except the outer periphery 24a; and the shoulder deposit 50 adhered to the outer periphery 24a is decomposed and removed while preventing the top surface of ESC 24 except the outer periphery 24a from being exposed to a F radical.

摘要翻译： 提供一种能够有效地除去沉积在ESC外周上的含有Si和Al的CF系肩层沉积物的室清洗方法。 在约400mTorr至约800mTorr的压力下，向ESC24的外周边24a供应O 2气体和F气体的混合气体; 从混合气体产生的等离子体照射到ESC24的外周24a上; 作为掩模气体的O 2单体气体除外周边24a供给到ESC24的上表面; 并且附着在外周24a上的肩部沉积物50被分解除去，同时防止除了外周边24a之外的ESC 24的顶面暴露于F基。

公开(公告)号：US08513563B2

公开(公告)日：2013-08-20

申请号：US13403588

申请日：2012-02-23

申请人： Naoki Matsumoto ,  Chishio Koshimizu ,  Yoshinobu Hayakawa ,  Hidetoshi Hanaoka ,  Manabu Iwata ,  Satoshi Tanaka

发明人： Naoki Matsumoto ,  Chishio Koshimizu ,  Yoshinobu Hayakawa ,  Hidetoshi Hanaoka ,  Manabu Iwata ,  Satoshi Tanaka

IPC分类号： B23K10/00

CPC分类号： H01J37/32165 ,  H01J37/32082

摘要： In a plasma processing apparatus, a first electrode is attached to a grounded evacuable processing chamber via an insulating material or a space and a second electrode disposed in parallel with the first electrode spaced apart therefrom in the processing chamber, the second electrode supporting a target substrate to face the first electrode. A first radio frequency power supply unit applies a first radio frequency power of a first frequency to the second electrode, and a second radio frequency power supply unit applies a second radio frequency power of a second frequency lower than the first frequency to the second electrode. Further, a processing gas supply unit supplies a processing gas to a processing space formed by the first and the second electrode and a sidewall of the processing chamber. Moreover, an inductor electrically is connected between the first electrode and a ground potential.

摘要翻译： 在等离子体处理装置中，第一电极经由绝缘材料或空间连接到接地的可抽出处理室，并且在处理室中与与其间隔开的第一电极平行设置的第二电极，第二电极支撑目标衬底 面对第一个电极。 第一射频电源单元向第二电极施加第一频率的第一射频功率，第二射频电源单元将第二频率低于第一频率的第二射频功率施加到第二电极。 此外，处理气体供给单元将处理气体供给到由第一和第二电极以及处理室的侧壁形成的处理空间。 此外，电感器电连接在第一电极和地电位之间。

公开(公告)号：US08343306B2

公开(公告)日：2013-01-01

申请号：US12046094

申请日：2008-03-11

申请人： Satoshi Tanaka ,  Chishio Koshimizu ,  Manabu Iwata ,  Naoki Matsumoto ,  Toru Ito

发明人： Satoshi Tanaka ,  Chishio Koshimizu ,  Manabu Iwata ,  Naoki Matsumoto ,  Toru Ito

IPC分类号： H01L21/00 ,  C23C16/00

CPC分类号： H01J37/32706 ,  H01J37/32091

摘要： A plasma processing apparatus can prevent a sheath from becoming distorted, simplify a configuration of the apparatus, and prevent particles from attaching to a substrate. The plasma processing apparatus performs plasma processing on the substrate. A housing chamber houses the substrate. A mounting stage is disposed within the housing chamber and mounted with the substrate. An annular member is disposed in the mounting stage. A power supply unit supplies high-frequency power to the mounting stage. An observation unit optically observes the distribution of the plasma. A voltage applying unit applies a DC voltage to the annular member. A control unit sets the value of the DC voltage to be applied based on the observed plasma distribution.

摘要翻译： 等离子体处理装置可以防止护套变形，简化装置的构造，并防止颗粒附着于基板。 等离子体处理装置对基板进行等离子体处理。 容纳室容纳衬底。 安装台设置在壳体室内并与基板一起安装。 环形构件设置在安装台中。 电源单元为安装级提供高频电源。 观察单元光学地观察等离子体的分布。 电压施加单元向环形构件施加DC电压。 控制单元基于观察到的等离子体分布来设定要施加的DC电压的值。

公开(公告)号：US08137471B2

公开(公告)日：2012-03-20

申请号：US12696323

申请日：2010-01-29

申请人： Akira Koshiishi ,  Masaru Sugimoto ,  Kunihiko Hinata ,  Noriyuki Kobayashi ,  Chishio Koshimizu ,  Ryuji Ohtani ,  Kazuo Kibi ,  Masashi Saito ,  Naoki Matsumoto ,  Manabu Iwata ,  Daisuke Yano ,  Yohei Yamazawa

发明人： Akira Koshiishi ,  Masaru Sugimoto ,  Kunihiko Hinata ,  Noriyuki Kobayashi ,  Chishio Koshimizu ,  Ryuji Ohtani ,  Kazuo Kibi ,  Masashi Saito ,  Naoki Matsumoto ,  Manabu Iwata ,  Daisuke Yano ,  Yohei Yamazawa

IPC分类号： C23C16/00

CPC分类号： H01J37/32091 ,  H01J37/32082 ,  H01J37/32174 ,  H01J37/32348 ,  H01J37/3244 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32642 ,  H01J37/32706 ,  H01J37/32834 ,  H01J2237/3344 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/67069

摘要： An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency is connected to the upper electrode. A second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber while any one of application voltage, application current, and application power from the variable DC power supply to the upper electrode is controlled, to generate plasma of the process gas so as to perform plasma etching.

摘要翻译： 一种装置包括用于支撑在处理室内相对设置的晶片的上电极和下电极。 被配置为施加具有相对较高频率的第一RF功率的第一RF电源连接到上电极。 配置为施加具有相对较低频率的第二RF功率的第二RF电源连接到下电极。 可变直流电源连接到上电极。 将处理气体供给到处理室中，同时控制来自可变直流电源到上部电极的施加电压，施加电流和施加电力中的任何一个，以产生处理气体的等离子体，以进行等离子体蚀刻。

公开(公告)号：US08431035B2

公开(公告)日：2013-04-30

申请号：US12465436

申请日：2009-05-13

申请人： Manabu Iwata ,  Chishio Koshimizu ,  Yohei Yamazawa

发明人： Manabu Iwata ,  Chishio Koshimizu ,  Yohei Yamazawa

IPC分类号： H01L21/3065 ,  C23C16/00 ,  C23C16/50 ,  C23C16/503 ,  C23C16/52 ,  B44C1/22

CPC分类号： H01J37/32091 ,  H01J37/32183

摘要： A plasma processing apparatus for processing a substrate by using a plasma includes a processing chamber for accommodating and processing the substrate therein, a lower electrode for mounting the substrate thereon in the processing chamber, an upper electrode disposed to face the lower electrode in the processing chamber, a radio frequency power supply for supplying a radio frequency power to at least one of the lower and the upper electrode, to thereby generate the plasma between the lower and the upper electrode, and an electrical characteristic control unit for adjusting an impedance of a circuit at the side of an electrode to the plasma for a frequency of at least one radio frequency wave present in the processing chamber such that the circuit does not resonate.

摘要翻译： 用于通过使用等离子体处理衬底的等离子体处理装置包括用于在其中容纳和处理衬底的处理室，用于将衬底安装在处理室中的下电极，设置成面对处理室中的下电极的上电极 ，用于向下电极和上电极中的至少一个提供射频电力的射频电源，从而在下电极和上电极之间产生等离子体;以及电特性控制单元，用于调节电路的阻抗 在等离子体的电极的侧面处于存在于处理室中的至少一个射频的频率，使得电路不共振。