摘要:
A driving device includes a first member, an annular second member arranged outside the first member, an annular first plate for connecting the first and second members to each other, and an annular second plate for connecting the first and second members to each other. The first and second members are moved relative to each other by supplying or exhausting a fluid into or from a space surrounded by the first and second members and the first and second plates. Also, at least one of (i) an inner diameter a1 of a portion of the second member at which the second member is connected to the first plate is different from an inner diameter a2 of a portion of the second member at which the second member is connected to the second plate and (ii) an outer diameter b1 of a portion of the first member at which the first member is connected to the first plate is different from an outer diameter b2 of a portion of the first member at which the first member is connected to the second plate.
摘要:
An optical component moving device having a driving portion and guiding portion, for moving an optical component, wherein the driving portion includes fluid enclosure system being expandable and contractible and the guiding portion includes a leaf spring.
摘要:
A stage system includes a stage mechanism having a movable stage and a stage supporting member for carrying the movable stage thereon, and a countermass mechanism having a movable countermass and a countermass supporting member for carrying the countermass thereon, wherein the stage supporting member and the countermass supporting member are supported separately or with vibration isolated.
摘要:
Vertical MISFETs are formed over drive MISFETs and transfer MISFETs. The vertical MISFETs comprise rectangular pillar laminated bodies each formed by laminating a lower semiconductor layer (drain), an intermediate semiconductor layer, and an upper semiconductor layer (source), and gate electrodes formed on corresponding side walls of the laminated bodies with gate insulating films interposed therebetween. In each vertical MISFET, the lower semiconductor layer constitutes a drain, the intermediate semiconductor layer constitutes a substrate (channel region), and the upper semiconductor layer constitutes a source. The lower semiconductor layer, the intermediate semiconductor layer and the upper semiconductor layer are each comprised of a silicon film. The lower semiconductor layer and the upper semiconductor layer are doped with a p type and constituted of a p type silicon film.
摘要:
This invention is to reduce the number of memory gate drivers, while lessening the number of times of disturb occurrence in a memory array configuration that implements writing in small byte units. A memory array comprises a plurality of sub-arrays, MG transfers, SL drivers, and CG drivers. Each sub-array includes a plurality of memory gate lines, control gate lines, source lines, and bit lines. Memory cells are arranged in positions of intersections of these lines. The control gate lines, CG drivers, source lines, and SL drivers are common to the sub-arrays, whereas the memory gate lines and MG buffer circuits are provided for each sub-array. Thereby, the units in which data is written are decreased and adverse effects of disturb are reduced without increasing the circuit size of the memory array.
摘要:
The semiconductor device includes a nonvolatile memory, having a memory array containing 1-bit twin cells, each composed of electrically rewritable first and second storage devices, the first and second storage devices holding binary data according to difference of their threshold voltages, and having different retention characteristics depending on difference of the binary data thereof; a read circuit for differentially amplifying complementary data output from the first and second storage devices of the twin cell selected for read, and judging information stored in the twin cell; and a control circuit. Two memory cells constituting a twin cell are arranged to hold different data. Therefore, even when the retention performance of one memory cell deteriorates, the difference between data held by the two memory cells can be maintained. Hence, differential amplification of such difference enables acquisition of proper stored information. Thus, retention performance of an electrically rewritable nonvolatile memory cell is improved.
摘要:
The degree of integration and the number of rewriting of a semiconductor device having a nonvolatile memory element are improved. A first MONOS nonvolatile-memory-element and a second MONOS nonvolatile-memory-element having a large gate width compared with the first MONOS nonvolatile-memory-element are mounted together on the same substrate, and the first MONOS nonvolatile-memory-element is used for storing program data which is scarcely rewritten, and the second MONOS nonvolatile-memory-element is used for storing processed data which is frequently rewritten.
摘要:
The apparatus includes a holder holding an optical element, a back plate supporting the optical element via the holder, a mechanism moving the optical element in a six-degree-of-freedom, a base plate supporting the back plate via the mechanism, and six displacement sensors disposed on the base plate and measuring displacement amounts of different points on the optical element. The displacement sensors includes three ones measuring them in a first direction, one measuring it in a second direction, and two ones measuring them in a third direction. The apparatus further includes a transformation processor transforming the six measured displacement amounts into displacement amounts of the optical element in the six-degree-of-freedom, a calibration processor calibrating the transformed displacement amounts, and a controller outputting command values to the displacing mechanism based on differences between the calibrated displacement amounts and target displacement amounts of the optical element.
摘要:
Methods for the prophylaxis and/or treatment of arteriosclerosis, hypertension, restenosis, heart diseases, renal diseases and cerebrovascular diseases by administering a pharmaceutical composition comprising the following active ingredients: (A) an angiotensin II receptor antagonist selected from the group consisting of a compound having a formula (I), a pharmacologically acceptable ester thereof and a pharmacologically acceptable salt thereof (for example, olmesartan medoxomil), the compound having the following formula: and (B) a calcium channel blocker selected from the group consisting of a 1,4-dihydropyridine compound and a pharmacologically acceptable salt thereof (for example, azelnidipine), wherein the composition does not include the combination of olmesartan medoxomil and amlodipine or amlodipine besylate.
摘要:
The present invention provides a drive mechanism having a high rigidity and capable of performing fine adjustment in 6-axis directions of an optical element such as a mirror or a lens, or a support member for supporting the optical element, in optical equipment such as an exposure device. The drive mechanism has such a feature that three monolithic planar 3-joint or 4-joint link mechanisms are each arranged between a movable portion and a stationary portion through the intermediation of a bearing having at least one degree of freedom of rotation.