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    COMPOSITION CONTAINING MICROFIBRILLATED PLANT FIBERS
    6.
    发明申请
    COMPOSITION CONTAINING MICROFIBRILLATED PLANT FIBERS 有权
    含微生物植物纤维的组合物

    公开(公告)号：US20120214911A1

    公开(公告)日：2012-08-23

    申请号：US13502581

    申请日：2010-10-21

    申请人： Hiroyuki Yano ,  Katsuhito Suzuki ,  Akihiro Sato

    发明人： Hiroyuki Yano ,  Katsuhito Suzuki ,  Akihiro Sato

    IPC分类号： C08L1/08

    CPC分类号： C08L23/02 ,  C08J5/045 ,  C08J2323/10 ,  C08K7/02 ,  C08L15/00 ,  C08L23/10 ,  C08L79/00 ,  C08L97/02 ,  C08L2666/02 ,  C08L51/003

    摘要： This invention provides a polyolefin-based molded article containing microfibrillated plant fibers having high strength and high elastic modulus. Specifically, the present invention provides a composition comprising (1) a polymeric compound having a primary amino group, (2) a polymeric compound modified with maleic anhydride, (3) microfibrillated plant fibers, and (4) a polyolefin; and a molded article obtained by subjecting the composition to heat treatment.

    摘要翻译： 本发明提供含有具有高强度和高弹性模量的微纤化植物纤维的聚烯烃基成型体。 具体而言，本发明提供一种组合物，其包含（1）具有伯氨基的聚合物，（2）用马来酸酐改性的聚合物，（3）微纤化植物纤维，和（4）聚烯烃; 以及通过对组合物进行热处理而获得的成型体。

    Manufacturing method of a semiconductor device
    7.
    发明授权
    Manufacturing method of a semiconductor device 有权
    半导体器件的制造方法

    公开(公告)号：US08174125B2

    公开(公告)日：2012-05-08

    申请号：US12412811

    申请日：2009-03-27

    申请人： Nobuyuki Kurashima ,  Gaku Minamihaba ,  Dai Fukushima ,  Yoshikuni Tateyama ,  Hiroyuki Yano

    发明人： Nobuyuki Kurashima ,  Gaku Minamihaba ,  Dai Fukushima ,  Yoshikuni Tateyama ,  Hiroyuki Yano

    IPC分类号： H01L23/48

    CPC分类号： H01L23/53295 ,  H01L21/76807 ,  H01L21/76832 ,  H01L21/7684 ,  H01L23/522 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A manufacturing method of a semiconductor device comprises: providing a first insulating film whose relative dielectric constant is at most a predetermined value above a substrate; providing a second insulating film whose relative dielectric constant is greater than the predetermined value on a surface of the first insulating film; forming a recess for a wire through the second insulating film and extending into the first insulating film, and also forming a recess for a dummy wire through the second insulating film and extending into the first insulating film spaced from a formed area of the recess for the wire; providing a conductive material inside the recess for the wire and the recess for the dummy wire; and providing a wire inside the recess for the wire and providing a dummy wire inside the recess for the dummy wire by polishing and removing the conductive material.

    摘要翻译： 半导体器件的制造方法包括：提供相对介电常数在基板上方至多预定值的第一绝缘膜; 提供在所述第一绝缘膜的表面上相对介电常数大于所述预定值的第二绝缘膜; 通过所述第二绝缘膜形成用于电线的凹槽并延伸到所述第一绝缘膜中，并且还通过所述第二绝缘膜形成用于虚拟线的凹槽并且延伸到与所述凹部的形成区域间隔开的所述第一绝缘膜中， 线; 在用于线的凹槽内部和用于虚拟线的凹槽内提供导电材料; 并且在所述凹槽内提供用于所述导线的线，并且通过抛光和去除所述导电材料在所述虚拟线的所述凹部内部提供虚拟线。

    POST-CMP TREATING LIQUID AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE USING THE SAME
    9.
    发明申请
    POST-CMP TREATING LIQUID AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE USING THE SAME 审中-公开
    使用其的半导体器件的后CMP处理液体和制造方法

    公开(公告)号：US20110195888A1

    公开(公告)日：2011-08-11

    申请号：US13091732

    申请日：2011-04-21

    申请人： Nobuyuki KURASHIMA ,  Gaku Minamihaba ,  Yoshikuni Tateyama ,  Hiroyuki Yano

    发明人： Nobuyuki KURASHIMA ,  Gaku Minamihaba ,  Yoshikuni Tateyama ,  Hiroyuki Yano

    IPC分类号： C11D3/60

    CPC分类号： H01L21/02074

    摘要： Post-CMP treating liquids are provided, one of which includes water, an amphoteric surfactant, an anionic surfactant, a complexing agent, resin particles having carboxylic group and sulfonyl group on their surfaces, a primary particle diameter thereof ranging from 10 to 60 nm, and tetramethyl ammonium hydroxide. Another includes water, polyphenol, an anionic surfactant, ethylene diamine tetraacetic acid, resin particles having carboxylic group and sulfonyl group on their surfaces, a primary particle diameter thereof ranging from 10 to 60 nm, and tetramethyl ammonium hydroxide. Both of the treating liquids have a pH ranging from 4 to 9, and exhibit a polishing rate both of an insulating film and a conductive film at a rate of 10 nm/min or less.

    摘要翻译： 提供后CMP处理液，其中之一包括水，两性表面活性剂，阴离子表面活性剂，络合剂，其表面具有羧基和磺酰基的树脂颗粒，其一次粒径为10至60nm， 和四甲基氢氧化铵。 另外还包括水，多酚，阴离子表面活性剂，乙二胺四乙酸，其表面具有羧基和磺酰基的树脂颗粒，其一次粒径为10至60nm，四甲基氢氧化铵。 两种处理液的pH范围为4至9，并且以10nm / min或更低的速率显示绝缘膜和导电膜的抛光速率。

    Method of manufacturing semiconductor device
    10.
    发明授权
    Method of manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US07985685B2

    公开(公告)日：2011-07-26

    申请号：US12262439

    申请日：2008-10-31

    申请人： Yukiteru Matsui ,  Masako Kinoshita ,  Seiro Miyoshi ,  Yoshikuni Tateyama ,  Takeshi Nishioka ,  Hiroyuki Yano

    发明人： Yukiteru Matsui ,  Masako Kinoshita ,  Seiro Miyoshi ,  Yoshikuni Tateyama ,  Takeshi Nishioka ,  Hiroyuki Yano

    IPC分类号： H01L21/311

    CPC分类号： H01L21/02118 ,  C09G1/02 ,  H01L21/022 ,  H01L21/02282 ,  H01L21/31058 ,  H01L21/31144 ,  H01L21/312 ,  H01L21/76808 ,  H01L21/76811 ,  H01L21/76835

    摘要： A method for manufacturing a semiconductor device is provided, the method includes forming a coated film by coating a solution containing a solvent and an organic component above an insulating film located above a semiconductor substrate and having a recess, baking the coated film at a first temperature which does not accomplish cross-linking of the organic component to obtain an organic film precursor, polishing the organic film precursor using a slurry containing resin particles to leave the organic film precursor in the recess, baking the left organic film precursor at a second temperature which is higher than the first temperature to remove the solvent to obtain a first organic film embedded in the recess, forming a second organic film on the insulating film, thereby obtaining an underlying film, forming an intermediate layer and a resist film successively above the underlying film, and subjecting the resist film to patterning exposure.

    摘要翻译： 提供了一种制造半导体器件的方法，该方法包括通过将含有溶剂和有机组分的溶液涂覆在位于半导体衬底上方并具有凹槽的绝缘膜上的溶液形成涂覆膜，在第一温度下烘烤该涂膜 其不能实现有机成分的交联以获得有机膜前体，使用含有树脂颗粒的浆料将有机膜前体抛光以在凹槽中离开有机膜前体，在第二温度下烘烤左有机膜前体 高于第一温度以除去溶剂以获得嵌入在凹部中的第一有机膜，在绝缘膜上形成第二有机膜，从而获得下面的膜，在基底膜上连续形成中间层和抗蚀剂膜 并对抗蚀剂膜进行图案曝光。