公开(公告)号：US07554427B2

公开(公告)日：2009-06-30

申请号：US11705520

申请日：2007-02-13

申请人： Hisanori Matsumoto ,  Atsushi Isobe ,  Kengo Asai

发明人： Hisanori Matsumoto ,  Atsushi Isobe ,  Kengo Asai

IPC分类号： H03H9/54 ,  H01L41/047

CPC分类号： H03H9/0095 ,  H03H3/04 ,  H03H9/583 ,  H03H9/584 ,  H03H9/585 ,  H03H9/588 ,  H03H9/589 ,  H03H9/605

摘要： A thin film bulk acoustic wave (BAW) resonator structure and filter which can be fabricated by inexpensive manufacturing techniques and in smaller size than conventional such products are to be provided. The BAW resonator structure and filter have a substrate, a first BAW resonator placed over the substrate, an acoustic reflection layer placed over the first BAW resonator and a second BAW resonator placed over the acoustic reflection layer, and the acoustic reflection layer is electroconductive. Herein, the acoustic reflection layer constitutes a first electrode, and this first electrode electrically connects and acoustically separates the first BAW resonator and the second BAW resonator.

摘要翻译： 要提供一种薄膜体声波（BAW）谐振器结构和滤波器，其可以通过廉价的制造技术制造并且尺寸比传统的这种产品更小。 BAW谐振器结构和滤波器具有衬底，布置在衬底上的第一BAW谐振器，放置在第一BAW谐振器上的声反射层和放置在声反射层上的第二BAW谐振器，并且声反射层是导电的。 这里，声反射层构成第一电极，并且该第一电极电连接并声学地分离第一BAW谐振器和第二BAW谐振器。

公开(公告)号：US20080169884A1

公开(公告)日：2008-07-17

申请号：US11705520

申请日：2007-02-13

申请人： Hisanori Matsumoto ,  Atsushi Isobe ,  Kengo Asai

发明人： Hisanori Matsumoto ,  Atsushi Isobe ,  Kengo Asai

IPC分类号： H03H9/54

CPC分类号： H03H9/0095 ,  H03H3/04 ,  H03H9/583 ,  H03H9/584 ,  H03H9/585 ,  H03H9/588 ,  H03H9/589 ,  H03H9/605

摘要： A thin film bulk acoustic wave (BAW) resonator structure and filter which can be fabricated by inexpensive manufacturing techniques and in smaller size than conventional such products are to be provided. The BAW resonator structure and filter have a substrate, a first BAW resonator placed over the substrate, an acoustic reflection layer placed over the first BAW resonator and a second BAW resonator placed over the acoustic reflection layer, and the acoustic reflection layer is electroconductive. Herein, the acoustic reflection layer constitutes a first electrode, and this first electrode electrically connects and acoustically separates the first BAW resonator and the second BAW resonator.

摘要翻译： 要提供一种薄膜体声波（BAW）谐振器结构和滤波器，其可以通过廉价的制造技术制造并且尺寸比传统的这种产品更小。 BAW谐振器结构和滤波器具有衬底，布置在衬底上的第一BAW谐振器，放置在第一BAW谐振器上的声反射层和放置在声反射层上的第二BAW谐振器，并且声反射层是导电的。 这里，声反射层构成第一电极，并且该第一电极电连接并声学地分离第一BAW谐振器和第二BAW谐振器。

公开(公告)号：US20070069606A1

公开(公告)日：2007-03-29

申请号：US11602330

申请日：2006-11-21

申请人： Hisanori Matsumoto ,  Kengo Asai ,  Atsushi Isobe ,  Mitsutaka Hikita

发明人： Hisanori Matsumoto ,  Kengo Asai ,  Atsushi Isobe ,  Mitsutaka Hikita

IPC分类号： H01L41/00

CPC分类号： H03H9/564 ,  H03H3/04 ,  H03H9/02157 ,  H03H9/174 ,  H03H9/568 ,  H03H2003/023 ,  H03H2003/0442 ,  H03H2003/0471

摘要： The present invention provides a film bulk acoustic wave resonator (FBAR) filter that can keep the Q factor high. The FBAR filter comprises a first FBAR with a first resonant frequency and a second FBAR with a second resonant frequency, formed on a same substrate. The FBAR filter has such a structure that a first underlayer is formed between the substrate and a first bottom electrode layer and a second underlayer is formed between the substrate and a second bottom electrode layer, the first underlayer thickness being different from the second underlayer thickness.

摘要翻译： 本发明提供一种可以使Q因子保持高的薄膜体声波谐振器（FBAR）滤波器。 FBAR滤波器包括形成在同一衬底上的具有第一谐振频率的第一FBAR和具有第二谐振频率的第二FBAR。 FBAR滤光器具有在基板和第一底部电极层之间形成第一底层的结构，在基板和第二底部电极层之间形成第二下层，第一下层厚度与第二下层厚度不同。

公开(公告)号：US08164399B2

公开(公告)日：2012-04-24

申请号：US13064564

申请日：2011-03-31

申请人： Atsushi Isobe ,  Kengo Asai ,  Hisanori Matsumoto

发明人： Atsushi Isobe ,  Kengo Asai ,  Hisanori Matsumoto

IPC分类号： H03H9/205

CPC分类号： H03H9/172 ,  H03H3/02 ,  H03H9/564 ,  H03H9/568 ,  H03H2003/021 ,  H03H2009/241

摘要： A thin film piezoelectric bulk acoustic wave resonator has a multilayer structure including a piezoelectric thin film, a first metal electrode film, and a second metal electrode film. At least a part of the piezoelectric thin film is interposed between the first and second metal electrodes. A resonance part and a connection part are formed on an insulating substrate as films by a thin film forming apparatus. The resonance part vibrates in radial extension mode with a center of the piezoelectric thin film used as a node, the piezoelectric thin film of two resonance parts is polarized in a direction perpendicular to a film surface, and a width of the connection part is one-fourth or less of a width of two resonance parts.

摘要翻译： 薄膜压电体声波谐振器具有包括压电薄膜，第一金属电极薄膜和第二金属电极薄膜的多层结构。 压电薄膜的至少一部分介于第一和第二金属电极之间。 共振部和连接部通过薄膜形成装置形成在绝缘基板上作为膜。 谐振部分以径向延伸模式振动，以压电薄膜的中心作为节点，两个谐振部分的压电薄膜在垂直于薄膜表面的方向上极化，连接部分的宽度为一倍， 两个共振部分的宽度的四分之一或更小。

公开(公告)号：US20090127978A1

公开(公告)日：2009-05-21

申请号：US12292448

申请日：2008-11-19

申请人： Kengo Asai ,  Hisanori Matsumoto ,  Atsushi Isobe

发明人： Kengo Asai ,  Hisanori Matsumoto ,  Atsushi Isobe

IPC分类号： H01L41/00 ,  H04R17/00

CPC分类号： H03H9/173 ,  H03H3/02 ,  H03H9/0514 ,  H03H9/132 ,  H03H9/172 ,  H03H2003/021 ,  Y10T29/42

摘要： The film bulk acoustic wave resonator includes a laminate structure composed of a piezoelectric layer, and first and second electrode layers interposing at least part of the piezoelectric layer, in which the first metal electrode is dispersively formed on an electrode plane facing the second metal electrode, and a gap is formed in a substrate correspondingly to the laminate-structured resonance part. Except for an area of a wire electrode electrically connected to the first electrode layer and an area of a wire electrode electrically connected to the second electrode layer, the piezoelectric layer, first electrode layer and second electrode layer do not come in contact with the insulating substrate but are supported on a hollow. Also, a prop is formed in the gap to support the laminate structure.

摘要翻译： 薄膜体声波谐振器包括由压电层构成的叠层结构，以及插入至少部分压电层的第一和第二电极层，其中第一金属电极分散地形成在面向第二金属电极的电极平面上， 并且与层叠结构的共振部相对应地在基板上形成间隙。 除了电连接到第一电极层的线电极的区域和与第二电极层电连接的线电极的区域之外，压电层，第一电极层和第二电极层不与绝缘衬底接触 但是在一个空心处被支撑。 此外，在间隙中形成支撑以支撑层压结构。

公开(公告)号：US07489063B2

公开(公告)日：2009-02-10

申请号：US11627858

申请日：2007-01-26

申请人： Atsushi Isobe ,  Kengo Asai ,  Hisanori Matsumoto ,  Nobuhiko Shibagaki

发明人： Atsushi Isobe ,  Kengo Asai ,  Hisanori Matsumoto ,  Nobuhiko Shibagaki

IPC分类号： H01L41/08

CPC分类号： H03H9/02228 ,  H03H3/04 ,  H03H9/173 ,  H03H9/175 ,  H03H9/564 ,  H03H9/568 ,  H03H9/605 ,  H03H2003/0428 ,  H03H2003/0457 ,  H03H2003/0471

摘要： An object of the present invention is to provide an inexpensive thin film piezoelectric bulk acoustic wave resonator that allows fine-tuning of a resonant frequency. Another object is to provide an inexpensive filter with dramatically improved frequency characteristics, using thin film piezoelectric bulk acoustic wave resonators that can be formed on one substrate. A thin film piezoelectric bulk acoustic wave resonator of the present invention has a laminated structure including a piezoelectric thin film, and a first metal electrode film and a second metal electrode film between which part of the piezoelectric thin film is sandwiched; the first metal electrode film has a plurality of holes formed on an electrode plane opposite to the second metal electrode film and having a depth equivalent to at least the thickness of the first metal electrode film; and if a combined thickness of top and bottom electrode layers and the piezoelectric thin film is ht, the covering ratio σ of the electrode plane of the first metal electrode film satisfies a condition 0

摘要翻译： 本发明的目的是提供一种廉价的薄膜压电体声波谐振器，其允许谐振频率的微调。 另一个目的是提供一种具有显着改善的频率特性的便宜的滤波器，使用可以在一个基板上形成的薄膜压电体声波谐振器。 本发明的薄膜压电体声波谐振器具有包括压电薄膜和第一金属电极薄膜和第二金属电极薄膜的叠层结构，压电薄膜的一部分夹在其间; 所述第一金属电极膜具有形成在与所述第二金属电极膜相反的电极面上并且具有至少等于所述第一金属电极膜的厚度的深度的多个孔; 并且如果顶部和底部电极层和压电薄膜的组合厚度为ht，则对于每1.28ht间距，第一金属电极膜的电极平面的覆盖比sigma满足条件0 <σ<1。

公开(公告)号：US20110148257A1

公开(公告)日：2011-06-23

申请号：US13036318

申请日：2011-02-28

申请人： Atsushi Isobe ,  Nobuhiko Shibagaki ,  Kengo Asai ,  Hisanori Matsumoto

发明人： Atsushi Isobe ,  Nobuhiko Shibagaki ,  Kengo Asai ,  Hisanori Matsumoto

IPC分类号： H01L41/047 ,  H01L41/04

CPC分类号： H03H9/21 ,  H03H2003/026

摘要： A compact resonator has a wide bandwidth and a small variation of the specific vibration frequency. The resonator is a thin film tuning-fork type inflection resonator in which a thin film made of a piezoelectric material is formed on a substrate on which a lower electrode is formed, and an upper electrode is formed on the piezoelectric thin film.

摘要翻译： 紧凑型谐振器具有宽带宽和特定振动频率的小变化。 谐振器是薄膜音叉式拐点共振器，其中在其上形成有下电极的基板上形成由压电材料制成的薄膜，并且在压电薄膜上形成上电极。

公开(公告)号：US20080111651A1

公开(公告)日：2008-05-15

申请号：US11979905

申请日：2007-11-09

申请人： Atsushi Isobe ,  Kengo Asai ,  Hisanori Matsumoto

发明人： Atsushi Isobe ,  Kengo Asai ,  Hisanori Matsumoto

IPC分类号： H03H9/54 ,  H03H9/17

CPC分类号： H03H9/172 ,  H03H3/02 ,  H03H9/564 ,  H03H9/568 ,  H03H2003/021 ,  H03H2009/241

摘要： A thin film piezoelectric bulk acoustic wave resonator has a multilayer structure including a piezoelectric thin film, a first metal electrode film, and a second metal electrode film. At least a part of the piezoelectric thin film is interposed between the first and second metal electrodes. A resonance part and a connection part are formed on an insulating substrate as films by a thin film forming apparatus. The resonance part vibrates in radial extension mode with a center of the piezoelectric thin film used as a node, the piezoelectric thin film of two resonance parts is polarized in a direction perpendicular to a film surface, and a width of the connection part is one-fourth or less of a width of two resonance parts.

摘要翻译： 薄膜压电体声波谐振器具有包括压电薄膜，第一金属电极薄膜和第二金属电极薄膜的多层结构。 压电薄膜的至少一部分介于第一和第二金属电极之间。 共振部和连接部通过薄膜形成装置形成在绝缘基板上作为膜。 谐振部分以径向延伸模式振动，以压电薄膜的中心作为节点，两个谐振部分的压电薄膜在垂直于薄膜表面的方向上极化，连接部分的宽度为一倍， 两个共振部分的宽度的四分之一或更小。

公开(公告)号：US20050168102A1

公开(公告)日：2005-08-04

申请号：US10909335

申请日：2004-08-03

申请人： Hisanori Matsumoto ,  Kengo Asai ,  Atsushi Isobe ,  Mitsutaka Hikita

发明人： Hisanori Matsumoto ,  Kengo Asai ,  Atsushi Isobe ,  Mitsutaka Hikita

IPC分类号： H03H9/54 ,  H01L41/08 ,  H03H3/02 ,  H03H3/04 ,  H03H9/02 ,  H03H9/17 ,  H03H9/56 ,  H03H9/70

CPC分类号： H03H9/564 ,  H03H3/04 ,  H03H9/02157 ,  H03H9/174 ,  H03H9/568 ,  H03H2003/023 ,  H03H2003/0442 ,  H03H2003/0471

摘要： The present invention provides a film bulk acoustic wave resonator (FBAR) filter that can keep the Q factor high. The FBAR filter comprises a first FBAR with a first resonant frequency and a second FBAR with a second resonant frequency, formed on a same substrate. The FBAR filter has such a structure that a first underlayer is formed between the substrate and a first bottom electrode layer and a second underlayer is formed between the substrate and a second bottom electrode layer, the first underlayer thickness being different from the second underlayer thickness.

摘要翻译： 本发明提供一种可以使Q因子保持高的薄膜体声波谐振器（FBAR）滤波器。 FBAR滤波器包括形成在同一衬底上的具有第一谐振频率的第一FBAR和具有第二谐振频率的第二FBAR。 FBAR滤光器具有在基板和第一底部电极层之间形成第一底层的结构，在基板和第二底部电极层之间形成第二下层，第一下层厚度与第二下层厚度不同。

公开(公告)号：US07940145B2

公开(公告)日：2011-05-10

申请号：US11979905

申请日：2007-11-09

申请人： Atsushi Isobe ,  Kengo Asai ,  Hisanori Matsumoto

发明人： Atsushi Isobe ,  Kengo Asai ,  Hisanori Matsumoto

IPC分类号： H03H9/205

CPC分类号： H03H9/172 ,  H03H3/02 ,  H03H9/564 ,  H03H9/568 ,  H03H2003/021 ,  H03H2009/241

摘要： A thin film piezoelectric bulk acoustic wave resonator has a multilayer structure including a piezoelectric thin film, a first metal electrode film, and a second metal electrode film. At least a part of the piezoelectric thin film is interposed between the first and second metal electrodes. A resonance part and a connection part are formed on an insulating substrate as films by a thin film forming apparatus. The resonance part vibrates in radial extension mode with a center of the piezoelectric thin film used as a node, the piezoelectric thin film of two resonance parts is polarized in a direction perpendicular to a film surface, and a width of the connection part is one-fourth or less of a width of two resonance parts.

摘要翻译： 薄膜压电体声波谐振器具有包括压电薄膜，第一金属电极薄膜和第二金属电极薄膜的多层结构。 压电薄膜的至少一部分介于第一和第二金属电极之间。 共振部和连接部通过薄膜形成装置形成在绝缘基板上作为膜。 谐振部分以径向延伸模式振动，以压电薄膜的中心作为节点，两个谐振部分的压电薄膜在垂直于薄膜表面的方向上极化，连接部分的宽度为一倍， 两个共振部分的宽度的四分之一或更小。