摘要:
A method for producing a light-emitting diode device includes the steps of: preparing a light-emitting laminate including an optical semiconductor layer, and an electrode unit formed on the optical semiconductor layer; forming an encapsulating resin layer on the optical semiconductor layer so as to cover the electrode unit, the encapsulating resin layer containing a light reflection component; partially removing the encapsulating resin layer so as to expose the top face of the electrode unit, thereby producing a light-emitting diode element; and disposing the light-emitting diode element and a base substrate provided with terminals so that the light-emitting diode element and the base substrate face each other, and that the electrode unit and the terminals are electrically connected, thereby flip chip mounting the light-emitting diode element on the base substrate.
摘要:
A light-emitting diode element includes an optical semiconductor layer, an electrode unit to be connected to the optical semiconductor layer, and an encapsulating resin layer that encapsulates the optical semiconductor layer and the electrode unit, the encapsulating resin layer containing a light reflection component.
摘要:
A method for producing a light emitting diode device includes the steps of preparing a phosphor layer formed in a sheet state; forming a light semiconductor layer on one surface in a thickness direction of the phosphor layer; forming an electrode portion on one surface of the light semiconductor layer; forming an encapsulating resin layer containing a light reflecting component so as to cover the light semiconductor layer and the electrode portion; producing the light emitting diode element by partially removing the encapsulating resin layer so as to expose one surface of the electrode portion; and allowing the electrode portion to be electrically connected to the terminal, so that the light emitting diode element is flip-chip mounted on the base board.
摘要:
The present invention relates to a resin composition for forming an insulating resin layer for optical semiconductor element housing package having a concave portion in which a metal lead frame and an optical semiconductor element mounted thereon are housed, in which the resin composition includes the following ingredients (A) to (D), and the ingredients (C) and (D) are contained in a blend ratio (C)/(D) of 0.3 to 3.0 as a weight ratio thereof: (A) an epoxy resin; (B) an acid anhydride curing agent; (C) a white pigment; and (D) an inorganic filler.
摘要:
The present invention relates to an epoxy resin composition for optical-semiconductor encapsulation which comprises the following ingredients (A) to (C): (A) an epoxy resin; (B) a curing agent; and (C) a naphthalocyanine colorant. The epoxy resin composition of the invention transmits visible rays and shields near infrared rays while retaining properties inherent in the epoxy resin.
摘要:
An epoxy resin composition for photosemiconductor element encapsulation, which is excellent in both light transmissibility and low stress property, as well as light resistance against short wavelength light (for example, 350 to 500 nm), is provided. The epoxy resin composition for photosemiconductor element encapsulation, which comprises the following components (A) to (C): (A) an epoxy resin, (B) an acid anhydride curing agent, and (C) a specific silicone resin.
摘要:
A phosphor ceramic includes at least one fluorescent layer that is capable of emitting fluorescent light; and at least one non-fluorescent layer that does not emit fluorescent light and is laminated onto the fluorescent layer.
摘要:
The present invention relates to a resin composition for optical semiconductor devices, the resin composition including the following ingredients (A) to (D): (A) an epoxy resin; (B) a curing agent; (C) a polyorganosiloxane; and (D) a white pigment.
摘要:
An epoxy resin composition for encapsulating an optical semiconductor element, which has small internal stress and also can obtain good light transmittance within a broad temperature range. An epoxy resin composition for encapsulating an optical semiconductor element comprising the following component (A):(A) an epoxy resin complex which comprises an epoxy resin as the matrix component and silicon dioxide particles (a) dispersed therein:(a) silicon dioxide particles having an average particle size of from 5 to 40 nm measured by the small angle neutron scattering (SANS).
摘要:
An epoxy resin composition for semiconductor encapsulation capable of giving semiconductor devices of high reliability that do not cause short circuits even in pitch reduction in the interconnection electrode distance or the conductor wire distance therein as well as a semiconductor device using the same. The epoxy resin composition for semiconductor encapsulation, which comprises the following components (A) to (C): (A) an epoxy resin, (B) a phenolic resin, and (C) an inorganic filler for preventing semiconductors from short-circuiting in a step of semiconductor encapsulation.