Method for producing light-emitting diode device
    1.
    发明授权
    Method for producing light-emitting diode device 有权
    发光二极管装置的制造方法

    公开(公告)号:US08642362B2

    公开(公告)日:2014-02-04

    申请号:US13403467

    申请日:2012-02-23

    IPC分类号: H01L33/52

    摘要: A method for producing a light-emitting diode device includes the steps of: preparing a light-emitting laminate including an optical semiconductor layer, and an electrode unit formed on the optical semiconductor layer; forming an encapsulating resin layer on the optical semiconductor layer so as to cover the electrode unit, the encapsulating resin layer containing a light reflection component; partially removing the encapsulating resin layer so as to expose the top face of the electrode unit, thereby producing a light-emitting diode element; and disposing the light-emitting diode element and a base substrate provided with terminals so that the light-emitting diode element and the base substrate face each other, and that the electrode unit and the terminals are electrically connected, thereby flip chip mounting the light-emitting diode element on the base substrate.

    摘要翻译: 一种发光二极管器件的制造方法,其特征在于,包括以下工序:制造包含光半导体层的发光层叠体和形成在所述光半导体层上的电极单元; 在所述光学半导体层上形成封装树脂层,以覆盖所述电极单元,所述封装树脂层包含光反射部件; 部分地去除封装树脂层以露出电极单元的顶面,从而产生发光二极管元件; 并且配置发光二极管元件和设置有端子的基底,使得发光二极管元件和基底基板彼此面对,并且电极单元和端子电连接,由此倒装芯片安装发光二极管元件, 发光二极管元件。

    Producing method of light emitting diode device and light emitting diode element
    3.
    发明授权
    Producing method of light emitting diode device and light emitting diode element 有权
    发光二极管器件和发光二极管元件的生产方法

    公开(公告)号:US08680557B2

    公开(公告)日:2014-03-25

    申请号:US13431240

    申请日:2012-03-27

    IPC分类号: H01L33/00 H01L21/00

    摘要: A method for producing a light emitting diode device includes the steps of preparing a phosphor layer formed in a sheet state; forming a light semiconductor layer on one surface in a thickness direction of the phosphor layer; forming an electrode portion on one surface of the light semiconductor layer; forming an encapsulating resin layer containing a light reflecting component so as to cover the light semiconductor layer and the electrode portion; producing the light emitting diode element by partially removing the encapsulating resin layer so as to expose one surface of the electrode portion; and allowing the electrode portion to be electrically connected to the terminal, so that the light emitting diode element is flip-chip mounted on the base board.

    摘要翻译: 一种发光二极管器件的制造方法,其特征在于,具有:制作以片状形成的荧光体层的工序; 在所述荧光体层的厚度方向的一个表面上形成光半导体层; 在所述光半导体层的一个表面上形成电极部分; 形成包含光反射部件的封装树脂层,以覆盖所述光半导体层和所述电极部分; 通过部分地去除封装树脂层来制造发光二极管元件,以暴露电极部分的一个表面; 并且允许电极部分电连接到端子,使得发光二极管元件倒装芯片安装在基板上。

    Epoxy resin composition for encapsulating optical semiconductor element and optical semiconductor device using the same
    9.
    发明授权
    Epoxy resin composition for encapsulating optical semiconductor element and optical semiconductor device using the same 有权
    用于封装光学半导体元件的环氧树脂组合物和使用其的光学半导体器件

    公开(公告)号:US07307286B2

    公开(公告)日:2007-12-11

    申请号:US10964733

    申请日:2004-10-15

    IPC分类号: H01L31/203

    摘要: An epoxy resin composition for encapsulating an optical semiconductor element, which has small internal stress and also can obtain good light transmittance within a broad temperature range. An epoxy resin composition for encapsulating an optical semiconductor element comprising the following component (A):(A) an epoxy resin complex which comprises an epoxy resin as the matrix component and silicon dioxide particles (a) dispersed therein:(a) silicon dioxide particles having an average particle size of from 5 to 40 nm measured by the small angle neutron scattering (SANS).

    摘要翻译: 一种用于封装光半导体元件的环氧树脂组合物,其具有小的内应力,并且还可以在宽的温度范围内获得良好的透光率。 一种用于封装包含以下组分(A)的光学半导体元件的环氧树脂组合物:(A)包含环氧树脂作为基质组分和分散在其中的二氧化硅颗粒(a)的环氧树脂配合物:(a)二氧化硅颗粒 通过小角度中子散射(SANS)测量的平均粒径为5至40nm。