公开(公告)号：US20110177690A1

公开(公告)日：2011-07-21

申请号：US12737650

申请日：2009-07-23

申请人： Hisataka Minami ,  Ryouta Saisyo ,  Hiroshi Ono

发明人： Hisataka Minami ,  Ryouta Saisyo ,  Hiroshi Ono

IPC分类号： H01L21/306 ,  C09K13/06

CPC分类号： C09K3/1463 ,  B24B37/044 ,  C09G1/02 ,  H01L21/3212 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L29/0657 ,  H01L2224/03616 ,  H01L2224/0401 ,  H01L2224/05026 ,  H01L2224/05073 ,  H01L2224/05082 ,  H01L2224/051 ,  H01L2224/05155 ,  H01L2224/05571 ,  H01L2224/05664 ,  H01L2224/11462 ,  H01L2224/13022 ,  H01L2224/131 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01037 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01044 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01055 ,  H01L2924/01056 ,  H01L2924/01057 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/14 ,  H01L2924/3025 ,  H01L2224/11 ,  H01L2224/03 ,  H01L2224/05552

摘要： The CMP polishing liquid of the present invention contains 1,2,4-triazole, a phosphoric acid, an oxidant, and abrasive particles. The polishing method of the present invention is a substrate polishing method for polishing a substrate with a polishing cloth while supplying a CMP polishing liquid between the substrate and the polishing cloth, in which the substrate is a substrate having a palladium layer, and the CMP polishing liquid is a CMP polishing liquid containing 1,2,4-triazole, a phosphoric acid, an oxidant, and abrasive particles.

摘要翻译： 本发明的CMP抛光液含有1,2,4-三唑，磷酸，氧化剂和磨料颗粒。 本发明的研磨方法是在基板和具有钯层的基板的基板和研磨布之间供给CMP研磨液的同时，用抛光布对基板进行研磨的基板研磨方法， 液体是含有1,2,4-三唑，磷酸，氧化剂和磨料颗粒的CMP抛光液。

公开(公告)号：US20120100718A1

公开(公告)日：2012-04-26

申请号：US13377457

申请日：2010-02-05

申请人： Hisataka Minami ,  Ryouta Saisyo ,  Jin Amanokura ,  Yuuhei Okada ,  Hiroshi Ono

发明人： Hisataka Minami ,  Ryouta Saisyo ,  Jin Amanokura ,  Yuuhei Okada ,  Hiroshi Ono

IPC分类号： H01L21/304 ,  C09K13/06

CPC分类号： H01L21/3212 ,  C09G1/02

摘要： The CMP polishing liquid for polishing palladium of this invention comprises an organic solvent, 1,2,4-triazole, a phosphorus acid compound, an oxidizing agent and an abrasive. The substrate polishing method is a method for polishing a substrate with a polishing cloth while supplying a CMP polishing liquid between the substrate and the polishing cloth, wherein the substrate is a substrate with a palladium layer on the side facing the polishing cloth, and the CMP polishing liquid is a CMP polishing liquid comprising an organic solvent, 1,2,4-triazole, a phosphorus acid compound, an oxidizing agent and an abrasive.

摘要翻译： 用于抛光本发明钯的CMP抛光液包括有机溶剂，1,2,4-三唑，磷酸化合物，氧化剂和研磨剂。 基板研磨方法是在基板和研磨布之间供给CMP抛光液的同时用抛光布对基板进行研磨的方法，其中基板是在面向研磨布的一侧上具有钯层的基板，CMP 抛光液是包含有机溶剂，1,2,4-三唑，磷酸化合物，氧化剂和研磨剂的CMP抛光液。

公开(公告)号：US10796921B2

公开(公告)日：2020-10-06

申请号：US13377457

申请日：2010-02-05

申请人： Hisataka Minami ,  Ryouta Saisyo ,  Jin Amanokura ,  Yuuhei Okada ,  Hiroshi Ono

发明人： Hisataka Minami ,  Ryouta Saisyo ,  Jin Amanokura ,  Yuuhei Okada ,  Hiroshi Ono

IPC分类号： H01L21/321 ,  C09G1/02

摘要： The CMP polishing liquid for polishing palladium of this invention comprises an organic solvent, 1,2,4-triazole, a phosphorus acid compound, an oxidizing agent and an abrasive. The substrate polishing method is a method for polishing a substrate with a polishing cloth while supplying a CMP polishing liquid between the substrate and the polishing cloth, wherein the substrate is a substrate with a palladium layer on the side facing the polishing cloth, and the CMP polishing liquid is a CMP polishing liquid comprising an organic solvent, 1,2,4-triazole, a phosphorus acid compound, an oxidizing agent and an abrasive.

公开(公告)号：US08900473B2

公开(公告)日：2014-12-02

申请号：US12737650

申请日：2009-07-23

申请人： Hisataka Minami ,  Ryouta Saisyo ,  Hiroshi Ono

发明人： Hisataka Minami ,  Ryouta Saisyo ,  Hiroshi Ono

IPC分类号： C03C15/00 ,  C03C25/68 ,  H01L21/302 ,  H01L21/461 ,  C09K3/14 ,  B24B37/04 ,  C09G1/02 ,  H01L21/321 ,  H01L23/00 ,  H01L29/06

CPC分类号： C09K3/1463 ,  B24B37/044 ,  C09G1/02 ,  H01L21/3212 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L29/0657 ,  H01L2224/03616 ,  H01L2224/0401 ,  H01L2224/05026 ,  H01L2224/05073 ,  H01L2224/05082 ,  H01L2224/051 ,  H01L2224/05155 ,  H01L2224/05571 ,  H01L2224/05664 ,  H01L2224/11462 ,  H01L2224/13022 ,  H01L2224/131 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01037 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01044 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01055 ,  H01L2924/01056 ,  H01L2924/01057 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/14 ,  H01L2924/3025 ,  H01L2224/11 ,  H01L2224/03 ,  H01L2224/05552

摘要： The CMP polishing liquid of the present invention contains 1,2,4-triazole, a phosphoric acid, an oxidant, and abrasive particles. The polishing method of the present invention is a substrate polishing method for polishing a substrate with a polishing cloth while supplying a CMP polishing liquid between the substrate and the polishing cloth, in which the substrate is a substrate having a palladium layer, and the CMP polishing liquid is a CMP polishing liquid containing 1,2,4-triazole, a phosphoric acid, an oxidant, and abrasive particles.

摘要翻译： 本发明的CMP抛光液含有1,2,4-三唑，磷酸，氧化剂和磨料颗粒。 本发明的研磨方法是在基板和具有钯层的基板的基板和研磨布之间供给CMP研磨液的同时，用抛光布对基板进行研磨的基板研磨方法， 液体是含有1,2,4-三唑，磷酸，氧化剂和磨料颗粒的CMP抛光液。