公开(公告)号：US20040232442A1

公开(公告)日：2004-11-25

申请号：US10879010

申请日：2004-06-30

申请人： Hitachi, Ltd. ,  Hitachi Yonezawa Electronics Co., Ltd.

发明人： Yoshihiko Shimanuki

IPC分类号： H01L029/76

CPC分类号： H01L23/49503 ,  H01L21/4825 ,  H01L21/4842 ,  H01L21/565 ,  H01L23/3107 ,  H01L23/3114 ,  H01L23/49513 ,  H01L23/4952 ,  H01L23/49541 ,  H01L23/49548 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/743 ,  H01L24/78 ,  H01L24/83 ,  H01L24/85 ,  H01L2224/05554 ,  H01L2224/05624 ,  H01L2224/29 ,  H01L2224/29007 ,  H01L2224/29111 ,  H01L2224/29139 ,  H01L2224/2919 ,  H01L2224/29298 ,  H01L2224/32014 ,  H01L2224/32055 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48106 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48599 ,  H01L2224/48699 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/743 ,  H01L2224/78301 ,  H01L2224/83192 ,  H01L2224/8385 ,  H01L2224/85181 ,  H01L2224/85205 ,  H01L2224/92 ,  H01L2224/92247 ,  H01L2224/97 ,  H01L2924/00013 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/10162 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15747 ,  H01L2924/1576 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2224/85 ,  H01L2224/83 ,  H01L2924/00 ,  H01L2924/0103 ,  H01L2924/0105 ,  H01L2924/01047 ,  H01L2924/01082 ,  H01L2924/3512 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/2929 ,  H01L2924/00012

摘要： The plurality of electrical leads of the semiconductor device have a connection portion exposed to the outer periphery on the back surface of the seal section and a thickness reduced portion formed to be thinner than said connection portion. The connection portion is provided with an inner groove and an outer groove in a wire bonding surface as disposed within the seal section of the connection portion. Wires are provided for electrical connection between the leads and pads of the semiconductor chip. The thickness reduced portion of the leads is covered by or coated with a sealing resin material while causing the wires to be contacted with the connection portion at specified part lying midway between the outer groove and inner groove to permit the thickness reduced portion of leads and the outer groove plus the inner groove to prevent the occurrence of any accidental lead drop-down detachment.

摘要翻译： 半导体器件的多个电引线具有暴露于密封部分的背面上的外周的连接部分和形成为比所述连接部分薄的厚度减小部分。 连接部分设置在布置在连接部分的密封部分内的引线接合表面中的内槽和外槽。 电线用于半导体芯片的引线和焊盘之间的电连接。 引线的厚度减少部分被密封树脂​​材料覆盖或涂覆，同时使导线与位于外槽和内槽之间的特定部分处的连接部分接触，以允许引线的厚度减小部分和 外槽加内槽，防止发生任何意外的铅下拉脱落。

公开(公告)号：US20020168796A1

公开(公告)日：2002-11-14

申请号：US10091302

申请日：2002-03-06

申请人： Hitachi, Ltd.

发明人： Yoshihiko Shimanuki ,  Masayuki Suzuki

IPC分类号： H01L021/44

CPC分类号： H01L24/32 ,  H01L21/4832 ,  H01L21/561 ,  H01L23/3107 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/97 ,  H01L2221/68377 ,  H01L2224/05554 ,  H01L2224/29007 ,  H01L2224/29111 ,  H01L2224/29139 ,  H01L2224/32014 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48664 ,  H01L2224/49113 ,  H01L2224/49171 ,  H01L2224/49433 ,  H01L2224/73265 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/85464 ,  H01L2224/92247 ,  H01L2224/97 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01019 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01083 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2224/83 ,  H01L2224/85 ,  H01L2924/00012 ,  H01L2924/01026 ,  H01L2924/0105 ,  H01L2924/01082 ,  H01L2924/3512 ,  H01L2924/00

摘要： A non-leaded resin-sealed semiconductor device is manufactured by the steps of providing a conductive flat substrate (metal plate) of copper plate or the like, fixing semiconductor elements respectively to predetermined positions on the principal surface of the substrate by an insulating adhesive, electrically connecting electrodes on the surfaces of the semiconductor elements with predetermined partition parts of the substrate separate from the semiconductor elements by conductive wires, forming an insulating resin layer on the principal surface of the substrate to cover the semiconductor elements and wires, selectively removing the substrate from the rear of said substrate to form electrically independent partition parts whereof at least some are external electrode terminals, and selectively removing said resin layer to fragment the device into regions containing the semiconductor elements and the plural partition parts around the semiconductor elements. Thus, there is provided a compact non-leaded semiconductor device having a large number of electrode terminals.

摘要翻译： 非导电树脂密封半导体器件通过以下步骤制造：提供铜板等的导电平面基板（金属板），通过绝缘粘合剂将半导体元件分别固定在基板的主表面上的预定位置， 将半导体元件的表面上的电极与基板的预定分隔部分用导电线与半导体元件分开，在基板的主表面上形成绝缘树脂层以覆盖半导体元件和导线，选择性地去除基板 从所述基板的后部形成电气独立的分隔部，其中至少一些是外部电极端子，并且选择性地去除所述树脂层以将器件分解成包含半导体元件的区域和围绕半导体元件的多个分隔部分。 因此，提供了具有大量电极端子的紧凑的非铅半导体器件。