公开(公告)号：US20200292308A1

公开(公告)日：2020-09-17

申请号：US16086063

申请日：2016-04-13

Applicant: Hitachi High-Technologies Corporation

Inventor： Hiroya OHTA ,  Kenji TANIMOTO ,  Tomohiro TAMORI ,  Takuma YAMAMOTO

IPC: G01B15/00 ,  H01J37/147 ,  H01J37/20 ,  H01J37/244

Abstract: The purpose of the present invention is to provide a pattern measurement device that is capable of highly accurately measuring a groove bottom, hole bottom, or the like, regardless of the accuracy of the formation of a deep groove or deep hole. To that end, the present invention proposes a pattern measurement device provided with a computation device for measuring the dimensions of a pattern formed on a sample on the basis of a signal obtained by a charged particle beam device, wherein the computation device determines the deviation between a first part of the pattern and a second part of the pattern at a different height than the first part and pattern dimension values on the basis of a detection signal obtained on the basis of the scanning of the sample by a charged particle beam and corrects the pattern dimension values using the deviation determined from the detection signal and relationship information indicating the relationship between the pattern dimensions and the deviation.

公开(公告)号：US20200278615A1

公开(公告)日：2020-09-03

申请号：US16645885

申请日：2017-10-13

Applicant: Hitachi High-Technologies Corporation

Inventor： Takuma YAMAMOTO ,  Hiroya OHTA ,  Kenji TANIMOTO ,  Yusuke ABE ,  Tomohiro TAMORI ,  Masaaki NOJIRI

IPC: G03F7/20 ,  G01N23/225 ,  G01B15/04

Abstract: The present invention comprises a computation device for measuring the dimensions of patterns formed on a sample on the basis of a signal obtained from a charged particle beam device. The computation device comprises a positional deviation amount calculation unit for calculating the amount of positional deviation in a direction parallel to a wafer surface between two patterns having different heights on the basis of an image acquired at a given beam tilt angle; a pattern inclination amount calculation unit for calculating an amount of pattern inclination from the amount of positional deviation using a predetermined relational expression for the amount of positional deviation and the amount of pattern inclination; and a beam tilt control amount calculation unit for controlling the beam tilt angle so as to match the amount of pattern inclination. The pattern measurement device sets the beam tilt angle to a calculated beam tilt angle, reacquires an image and measures the patterns.

公开(公告)号：US20150371816A1

公开(公告)日：2015-12-24

申请号：US14763363

申请日：2014-01-17

Applicant: Hitachi High- Technologies Corporation

Inventor： Ayumi DOI ,  Tomohiro FUNAKOSHI ,  Takuma YAMAMOTO ,  Tomohiro TAMORI ,  Tsunehiro SAKAI

IPC: H01J37/26 ,  H01J37/28

CPC classification number: H01J37/263 ,  H01J37/241 ,  H01J37/28 ,  H01J2237/225 ,  H01J2237/281

Abstract: A sample observation device of the invention includes: a charged particle optical column for irradiating a sample with charged particle beams at a first acceleration voltage, the sample having a target part to be observed which is a concave part; an image acquisition part for acquiring an image including the target part to be observed on the basis of signals obtained by irradiation with the charged particle beams; a memory part for memorizing in advance, at each of a plurality of acceleration voltages, information indicating a relationship between a brightness ratio of a concave part to a periphery part of the concave part in a standard sample and a value indicating a structure of the concave part in the standard sample; and an operation part for obtaining a brightness ratio of the concave part to a periphery part of the concave part in the image. The operation part judges appropriateness/inappropriateness of the first acceleration voltage with the use of the information indicating the relationship and the brightness ratio in the image.

Abstract translation: 本发明的样品观察装置包括：带电粒子光学柱，用于以第一加速电压照射带有带电粒子束的样品，所述样品具有作为凹部的观察对象部分; 图像获取部分，用于基于通过照射带电粒子束获得的信号来获取包括要观察的目标部分的图像; 存储器部分，用于在多个加速电压中的每一个处预先存储指示在标准样品中凹部与凹部的周边部分的亮度比与凹部的结构的值之间的关系的信息 标准样品的一部分; 以及用于获得图像中的凹部与凹部的周边部的亮度比的操作部。 操作部通过使用表示图像的关系和亮度比的信息来判断第一加速电压的适当性/不适当性。

公开(公告)号：US20160379798A1

公开(公告)日：2016-12-29

申请号：US15039527

申请日：2014-11-19

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Chie SHISHIDO ,  Takuma YAMAMOTO ,  Shinya YAMADA ,  Maki TANAKA

IPC: H01J37/29 ,  H01J37/244 ,  G01B15/00

CPC classification number: H01J37/29 ,  G01B15/00 ,  G01B15/04 ,  G01B2210/56 ,  H01J37/244 ,  H01J37/28 ,  H01J2237/24475 ,  H01J2237/2448 ,  H01J2237/24495 ,  H01J2237/2806 ,  H01J2237/281 ,  H01J2237/2815 ,  H01L22/12

Abstract: In order to allow detecting backscattered electrons (BSEs) generated from the bottom of a hole for determining whether a hole with a super high aspect ratio is opened or for inspecting and measuring the ratio of the top diameter to the bottom diameter of a hole, which are typified in 3D-NAND processes of opening a hole, a primary electron beam accelerated at a high accelerating voltage is applied to a sample. Backscattered electrons (BSEs) at a low angle (e.g. a zenith angle of five degrees or more) are detected. Thus, the bottom of a hole is observed using “penetrating BSEs” having been emitted from the bottom of the hole and penetrated the side wall. Using the characteristics in which a penetrating distance is relatively prolonged through a deep hole and the amount of penetrating BSEs is decreased to cause a dark image, a calibration curve expressing the relationship between a hole depth and the brightness is given to measure the hole depth.

Abstract translation: 为了允许检测从孔的底部产生的背散射电子（BSE），用于确定是否打开具有超高纵横比的孔，或者用于检查和测量孔的顶部直径与底部直径的比， 以3D-NAND打开孔的方式为代表，以高加速电压加速的一次电子束被施加到样品。 检测到低角度（例如五度以上的天顶角）的背散射电子（BSE）。 因此，使用从孔的底部排出并穿透侧壁的“穿透BSE”来观察孔的底部。 利用穿透深度相对延长穿过深孔的特性，并减少穿透性BSE的量使黑暗的图像表现出孔深与亮度之间的关系的校准曲线来测量孔深度。

公开(公告)号：US20160071688A1

公开(公告)日：2016-03-10

申请号：US14786039

申请日：2014-04-17

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Yasunori GOTO ,  Takuma YAMAMOTO

IPC: H01J37/22 ,  H01J37/28

CPC classification number: H01J37/222 ,  H01J37/22 ,  H01J37/28 ,  H01J2237/221 ,  H01J2237/281 ,  H01J2237/2815 ,  H01L22/12

Abstract: Provided is a sample observation apparatus including a charged particle optical column that, irradiates a sample including an observation target portion that is a concave portion with a charged particle beam at an acceleration voltage, an image generation section that acquires an image including the observation target portion from a signal acquired with irradiation of the charged particle beam, a storage section that stores information representing a relationship between a brightness ratio of a concave portion and its neighboring portion of a reference sample that is irradiated with the charged particle beam at the acceleration voltage and a value that represents a structure of the concave portions of the reference sample in advance, a calculation section that acquires a brightness ratio of the concave portion and its neighboring portion of the image, and a determination section that determines whether or not a defect occurs in the observation target portion based on the information that represents the relationship and the brightness ratio of the image.

Abstract translation: 本发明提供一种样本观察装置，其包括带电粒子光学柱，其将包括具有加速电压的带有带电粒子束的凹部的观察对象部的样本照射到获取包含观察对象部的图像的图像生成部 存储部分，其存储表示在加速电压下照射带电粒子束的参考样本的凹部的亮度与其相邻部分的亮度比之间的关系的信息;以及存储部， 预先表示参考样本的凹部的结构的值，获取图像的凹部及其相邻部分的亮度比的计算部，以及判断是否发生缺陷的判定部 基于信息th的观察目标部分 at表示图像的关系和亮度比。

公开(公告)号：US20160056014A1

公开(公告)日：2016-02-25

申请号：US14888792

申请日：2014-03-10

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Takuma YAMAMOTO ,  Yasunori GOTO ,  Fumihiko FUKUNAGA

IPC: H01J37/22 ,  G01B15/00 ,  H01J37/28

CPC classification number: H01J37/222 ,  G01B15/00 ,  G03F7/70633 ,  H01J37/28 ,  H01J2237/221 ,  H01J2237/2806 ,  H01J2237/2817

Abstract: When a scanning electron microscope is used to measure a superposition error between upper-layer and lower-layer patterns, an SN of the lower-layer pattern may often be lower, so that when simple frame adding processing is used, the adding processing needs to be performed many times. Further, in an image obtained through such simple adding processing, contrast may not be optimal for both the upper-layer and lower-layer patterns. In a superposition measuring apparatus and superposition measuring method that measure a difference between a position of an upper-layer pattern and a position of a lower-layer pattern by using an image obtained by irradiation of a charged particle ray, portions of images having contrasts optimized for the respective upper-layer and lower-layer patterns are added to generate a first added image optimized for the upper-layer pattern and a second added image optimized for the lower-layer pattern, and the difference between the position of the upper-layer pattern identified by using the first added image and position of the lower-layer pattern identified by using the second added image is calculated.

Abstract translation: 当使用扫描电子显微镜来测量上层和下层图案之间的叠加误差时，下层图案的SN通常可能较低，因此当使用简单的帧添加处理时，添加处理需要 执行多次。 此外，在通过这种简单的添加处理获得的图像中，对比度对于上层图案和下层图案都不是最佳的。 在通过使用通过照射带电粒子射线获得的图像来测量上层图案的位置和下层图案的位置之间的差异的叠加测量装置和叠加测量方法中，将具有对比度的优化的图像的部分 为了生成针对上层图案而优化的第一添加图像和针对下层图案优化的第二附加图像，并且上层和下层图案的位置之间的差异 计算通过使用第一添加图像识别的图案和通过使用第二添加图像识别的下层图案的位置。