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公开(公告)号：US5718762A
公开(公告)日：1998-02-17
申请号：US607566
申请日：1996-02-27
IPC分类号： C30B29/06 , C23C16/02 , C30B25/02 , C30B33/12 , H01L21/205 , H01L21/302 , H01L21/3065 , C30B25/20
摘要： A method for vapor-phase growth which allows an epiwafer of a smooth surface free from microroughness to be produced is provided. This method comprises a step of heating up a silicon single crystal substrate in an ambience of an inert gas started at a temperature of less than 800.degree. C. and a step of removing a native oxide film formed on the surface of the silicon single crystal substrate by etching with hydrogen gas in an ambience of hydrogen gas at a temperature of not less than 950.degree. C. and not more than 1190.degree. C. prior to the vapor-phase growth.
摘要翻译： 提供了一种气相生长方法，其允许产生没有微粗糙度的光滑表面的外延膜。 该方法包括在低于800℃的温度下开始的惰性气体的氛围中加热硅单晶衬底的步骤，以及去除在硅单晶衬底的表面上形成的自然氧化膜的步骤 在气相生长前，在不低于950℃，不高于1190℃的氢气气氛中用氢气蚀刻。
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公开(公告)号：US6048793A
公开(公告)日：2000-04-11
申请号：US546868
申请日：1995-10-23
IPC分类号： C23C16/24 , C23C16/02 , C23C16/44 , C23C16/455 , C23C16/48 , C30B25/10 , H01L21/205 , C23C16/01
CPC分类号： C23C16/481 , C23C16/0209 , C23C16/0236 , C23C16/4401 , C30B25/10
摘要： In a method and an appratus for a thin film growth on a semiconductor crystal substrate, impurities and contaminants absorbed on the inside wall of the reaction vessel are very harmful because these impurities and contaminants will deteriorate the quality of the thin film. A method and an apparatus by which the quantity of these impurities and contaminants absorbed on the inside wall of the reaction vessel can be restrained and removed easily are disclosed in this invention, wherein a semiconductor crystal substrate is mounted in the reaction vessel, and the wall of the reation vessel is cooled forcibly by a coolant while the substrate is under heating procedure to grow a thin film on the substrate by supplying the raw material gas into the reaction vessel. And the temperature of the wall of the reaction vessel during the procedure except the thin film growth is kept higher temperature than the temprature of the wall of the reaction vessel during the thin film growth procedure.
摘要翻译： 在半导体晶体基板上的薄膜生长的方法和设备中，吸收在反应容器的内壁上的杂质和污染物是非常有害的，因为这些杂质和污染物将使薄膜的质量劣化。 在本发明中公开了容易地抑制和去除反应容器的内壁上吸收的这些杂质和污染物的量的方法和装置，其中半导体晶体基板安装在反应容器中，壁 的反应容器被冷却剂强制冷却，同时衬底处于加热过程中，以通过将原料气体供应到反应容器中而在衬底上生长薄膜。 并且在薄膜生长过程中除了薄膜生长之外，反应容器的壁温度保持比反应容器壁温度高的温度。
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公开(公告)号：US5938840A
公开(公告)日：1999-08-17
申请号：US036780
申请日：1998-03-09
IPC分类号： H01L21/205 , C23C16/44 , C23C16/455 , C30B25/14 , C30B23/03
CPC分类号： C23C16/45506 , C23C16/455 , C30B25/14 , Y10T117/10
摘要： In the formation of a thin film on the surface of a semiconductor crystal substrate by using a horizontal type vapor phase growth apparatus, the distribution of the thickness and resistivity of the thin film can be properly obtained by adjusting the concentration distribution of the raw material gas in the mixture gas in the width direction of the reaction vessel over the substrate surface. And in the reaction vessel, carrier gas is supplied from the position close to the transfer port of the substrate, and raw material gas is supplied from the position located in the downstream side of a vortex generation region caused by the flow of the carrier gas.
摘要翻译： 通过使用水平型气相生长装置在半导体晶体基板的表面上形成薄膜，可以通过调整原料气体的浓度分布来适当地获得薄膜的厚度和电阻率的分布 在反应容器的宽度方向上的混合气体的基板表面上。 在反应容器中，从靠近基板的输送口的位置供给载气，从由载气流动引起的涡流产生区域的下游侧的位置供给原料气体。
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公开(公告)号：US5755878A
公开(公告)日：1998-05-26
申请号：US546867
申请日：1995-10-23
IPC分类号： H01L21/205 , C23C16/44 , C23C16/455 , C30B25/14 , C30B23/03
CPC分类号： C23C16/45506 , C23C16/455 , C30B25/14 , Y10T117/10
摘要： In the formation of a thin film on the surface of a semiconductor crystal substrate by using a horizontal type vapor phase growth apparatus, the distribution of the thickness and resistivity of the thin film can be properly obtained by adjusting the concentration distribution of the raw material gas in the mixture gas in the width direction of the reaction vessel over the substrate surface. And in the reaction vessel, carrier gas is supplied from the position close to the transfer port of the substrate, and raw material gas is supplied from the position located in the downstream side of a vortex generation region caused by the flow of the carrier gas.
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公开(公告)号：US06254933B1
公开(公告)日：2001-07-03
申请号：US09395848
申请日：1999-09-14
IPC分类号： C23C1600
CPC分类号： C30B25/08 , C23C16/455 , C30B25/14
摘要： A method of performing chemical vapor deposition which produces semiconductor crystalline thin films having small transition widths. The method involves the use of a cold-wall type reaction chamber that is equipped with a gas inlet at one end and a gas outlet at the other end and a semiconductor substrate support which supports a semiconductor substrate so that a main surface thereof is horizontal. A reactant gas is caused to flow horizontally through the reaction chamber to effect the growing of a crystalline thin film on the main surface of the semiconductor substrate. The semiconductor substrate is arranged within the reactor chamber within a distance W which is measured from a leading edge of the semiconductor substrate at a most upstream position along a direction toward the gas outlet where W indicates an internal width of the reaction chamber. The semiconductor substrate is also in a location having a W/G ratio of 15 or greater, where G represents a distance between the main surface of the semiconductor substrate and a ceiling of the reaction chamber.
摘要翻译： 一种进行化学气相沉积的方法，其产生具有小转变宽度的半导体晶体薄膜。 该方法包括使用在一端配备气体入口和另一端的气体出口的冷壁式反应室，以及支撑半导体衬底以使其主表面为水平的半导体衬底支撑件。 使反应气体水平地流过反应室，以在半导体衬底的主表面上生长晶体薄膜。 将半导体衬底布置在反应器室内的距离W内，该距离W是沿着朝向气体出口的方向的最上游位置从半导体衬底的前缘测量的，其中W表示反应室的内部宽度。 半导体衬底也处于W / G比为15或更大的位置，其中G表示半导体衬底的主表面和反应室的顶部之间的距离。
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公开(公告)号：US5749974A
公开(公告)日：1998-05-12
申请号：US502042
申请日：1995-07-13
IPC分类号： C23C16/44 , C23C16/455 , C30B25/08 , C30B25/14 , H01L21/205 , C23C16/00
CPC分类号： C30B25/08 , C23C16/455 , C30B25/14
摘要： A reactor for chemical vapor deposition which is capable of producing semiconductor crystalline thin films having small transition widths. The reactor includes a cold-wall type reaction chamber that is equipped with a gas inlet at one end and a gas outlet at the other end and a semiconductor substrate support which supports a semiconductor substrate so that a main surface thereof is horizontal. A reactant gas is caused to flow horizontally through the reaction chamber to effect the growing of a crystalline thin film on the main surface of the semiconductor substrate. The semiconductor substrate is arranged within the reactor chamber within a distance W which is measured from a leading edge of the semiconductor substrate at a most upstream position along a direction toward the gas outlet where W indicates an internal width of the reaction chamber. The semiconductor substrate is also in a location having a W/G ratio of 15 or greater, where G represents a distance between the main surface of the semiconductor substrate and a ceiling of the reaction chamber.
摘要翻译： 一种用于化学气相沉积的反应器，其能够产生具有小转变宽度的半导体晶体薄膜。 该反应器包括：冷壁式反应室，其在一端装有气体入口，另一端装有气体出口;以及半导体衬底支撑件，其支撑半导体衬底以使其主表面是水平的。 使反应气体水平地流过反应室，以在半导体衬底的主表面上生长晶体薄膜。 将半导体衬底布置在反应器室内的距离W内，该距离W是沿着朝向气体出口的方向的最上游位置从半导体衬底的前缘测量的，其中W表示反应室的内部宽度。 半导体衬底也处于W / G比为15或更大的位置，其中G表示半导体衬底的主表面和反应室的顶部之间的距离。
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公开(公告)号：US5743956A
公开(公告)日：1998-04-28
申请号：US665290
申请日：1996-06-17
申请人： Hitoshi Habuka , Masanori Mayuzumi
发明人： Hitoshi Habuka , Masanori Mayuzumi
IPC分类号： C30B25/10 , C30B25/12 , H01L21/205
摘要： A method of producing a high-quality single crystal thin film in which a temperature of a semiconductor single crystal substrate is raised or lowered in a short time with no occurrence of slippage in the substrate. In a cold-wall type reaction vessel, a substrate is placed on a holder which has no heating capability in the reaction vessel and a thin film is grown on the substrate, while a reaction gas is fed to flow in one direction through the reaction vessel, and at the same time, a temperature profile on the substrate along the flow direction of the reaction gas is adjusted to be uniform by a spatially controlled heating energy distribution and/or with the help of an auxiliary heating region provided at an upstream part of the substrate.
摘要翻译： 制造半导体单晶衬底的温度在短时间内升高或降低的高品质单晶薄膜的方法，而不会在衬底中发生滑动。 在冷壁型反应容器中，将基板放置在在反应容器中不具有加热能力的保持器上，并且在基板上生长薄膜，同时将反应气体沿一个方向供给通过反应容器 ，并且同时沿着反应气体的流动方向将基板上的温度分布调整为通过空间受控的加热能量分布和/或借助于设置在上游部分的辅助加热区域 底物。
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公开(公告)号：US5993557A
公开(公告)日：1999-11-30
申请号：US153326
申请日：1998-09-15
CPC分类号： C23C16/45521 , C23C16/4401 , C23C16/455 , C30B25/12 , C30B25/14
摘要： An apparatus for growing a high-quality single-crystalline semiconductor film on a substrate based on vapor phase growth while rotating the substrate and preventing micro-particles generated by a rotary drive unit from adhering onto the major plane of the substrate. The substrate 2 set inside the reaction chamber 21 is rotated using the rotary drive unit 7, a reaction gas 10 is fed to the major plane side of the substrate 2, a purge gas 3a is fed to the back space of the substrate in the reaction to chamber 21 to replace a space 11a with a carrier gas atmosphere, where the rotary drive unit 7 is located in the purge gas discharge section 13, a purge gas discharge duct 12 connected to the purge gas discharge section, and further to the purge gas discharge duct 12 is connected a gas flow controller 8, and serially in the downstream side thereof is connected an evacuation pump 9.
摘要翻译： 一种用于在旋转衬底的同时基于气相生长在衬底上生长高质量单晶半导体膜并防止由旋转驱动单元产生的微粒子粘附到衬底的主平面上的装置。 使用旋转驱动单元7使设置在反应室21内的基板2旋转，将反应气体10供给到基板2的主面侧，在反应中将吹扫气体3a供给到基板的后部空间 到腔室21以替代具有载气气氛的空间11a，其中旋转驱动单元7位于净化气体排放部分13中，吹扫气体排放管道12连接到吹扫气体排出部分，并且还包括吹扫气体 排气管12连接有气体流量控制器8，并且其下游侧连续地连接有排气泵9。
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9.发明授权Method for growing single-crystalline semiconductor film and apparatus used therefor 失效用于生长单晶半导体膜的方法和用于其的装置
公开(公告)号：US5849078A
公开(公告)日：1998-12-15
申请号：US806163
申请日：1997-02-25
IPC分类号： C30B25/14 , C23C16/44 , C23C16/455 , C30B25/02 , C30B25/12 , H01L21/205 , C30B35/00
CPC分类号： C23C16/45521 , C30B25/02 , C30B25/12 , Y10S117/914
摘要： A method for growing a high-quality single-crystalline semiconductor film on a substrate based on vapor phase growth while rotating the substrate and preventing micro-particles generated by a rotary drive unit from adhering onto the major plane of the substrate. The substrate 2 set inside the reaction chamber 21 is rotated using the rotary drive unit 7, a reaction gas 10 is fed to the major plane side of the substrate 2, a purge gas 3a is fed to the back space of the substrate in the reaction chamber 21 to replace a space 11a with a carrier gas atmosphere, where the rotary drive unit 7 is located in the purge gas discharge section 13, a purge gas discharge duct 12 is connected to the purge gas discharge section, and further to the purge gas discharge duct 12 is connected a gas flow controller 8, and serially in the downstream side thereof is connected an evacuation pump 9.
摘要翻译： 一种在旋转衬底的同时基于气相生长在衬底上生长高质量单晶半导体膜的方法，并且防止由旋转驱动单元产生的微粒子粘附到衬底的主平面上。 使用旋转驱动单元7使设置在反应室21内的基板2旋转，将反应气体10供给到基板2的主面侧，在反应中将吹扫气体3a供给到基板的后部空间 腔室21更换具有载气气氛的空间11a，旋转驱动单元7位于净化气体排出部13中，净化气体排出管12与净化气体排出部连接，进一步与净化气体 排气管12连接有气体流量控制器8，并且其下游侧连续地连接有排气泵9。
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10.发明授权
公开(公告)号：US5916824A
公开(公告)日：1999-06-29
申请号：US655166
申请日：1996-05-30
IPC分类号： C23F1/12 , H01L21/302 , H01L21/306 , H01L21/66 , C23F1/02 , C23F1/08
CPC分类号： H01L21/02046 , H01L21/30604
摘要： A silicon wafer is held in an airtight chamber by a silicon wafer holder. The silicon wafer holder is cooled by a cooler. High purity nitric acid is stored in a storage container disposed in the airtight container. The storage container is heated by a heater, thereby producing nitric acid gas. The nitric acid gas is condensed on the surface of the silicon wafer so that a thin film is formed. Thus, the surface of the silicon wafer is rendered hydrophilic. Thereafter, high purity hydrofluoric acid is dropped on high purity nitric acid in the storage container by an acid dropper, thereby producing hydrofluoric acid gas. By introducing the hydrofluoric acid gas into the thin film formed on the surface of the silicon wafer, an etching is performed while maintaining the surface of the silicon wafer in a good condition.
摘要翻译： 硅晶片通过硅晶片保持器保持在气密室中。 硅晶片保持架由冷却器冷却。 高纯度硝酸储存在设置在密闭容器中的储存容器中。 储存容器被加热器加热，从而产生硝酸气体。 硝酸气体在硅晶片的表面上被冷凝，从而形成薄膜。 因此，使硅晶片的表面呈亲水性。 然后，通过酸滴定剂将高纯度氢氟酸滴加到储存容器中的高纯度硝酸上，由此生成氢氟酸气体。 通过将氢氟酸气体引入形成在硅晶片表面上的薄膜中，进行蚀刻，同时保持硅晶片的表面处于良好状态。
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