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公开(公告)号：US5718762A
公开(公告)日：1998-02-17
申请号：US607566
申请日：1996-02-27
IPC分类号： C30B29/06 , C23C16/02 , C30B25/02 , C30B33/12 , H01L21/205 , H01L21/302 , H01L21/3065 , C30B25/20
摘要： A method for vapor-phase growth which allows an epiwafer of a smooth surface free from microroughness to be produced is provided. This method comprises a step of heating up a silicon single crystal substrate in an ambience of an inert gas started at a temperature of less than 800.degree. C. and a step of removing a native oxide film formed on the surface of the silicon single crystal substrate by etching with hydrogen gas in an ambience of hydrogen gas at a temperature of not less than 950.degree. C. and not more than 1190.degree. C. prior to the vapor-phase growth.
摘要翻译： 提供了一种气相生长方法，其允许产生没有微粗糙度的光滑表面的外延膜。 该方法包括在低于800℃的温度下开始的惰性气体的氛围中加热硅单晶衬底的步骤，以及去除在硅单晶衬底的表面上形成的自然氧化膜的步骤 在气相生长前，在不低于950℃，不高于1190℃的氢气气氛中用氢气蚀刻。
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公开(公告)号：US06254933B1
公开(公告)日：2001-07-03
申请号：US09395848
申请日：1999-09-14
IPC分类号： C23C1600
CPC分类号： C30B25/08 , C23C16/455 , C30B25/14
摘要： A method of performing chemical vapor deposition which produces semiconductor crystalline thin films having small transition widths. The method involves the use of a cold-wall type reaction chamber that is equipped with a gas inlet at one end and a gas outlet at the other end and a semiconductor substrate support which supports a semiconductor substrate so that a main surface thereof is horizontal. A reactant gas is caused to flow horizontally through the reaction chamber to effect the growing of a crystalline thin film on the main surface of the semiconductor substrate. The semiconductor substrate is arranged within the reactor chamber within a distance W which is measured from a leading edge of the semiconductor substrate at a most upstream position along a direction toward the gas outlet where W indicates an internal width of the reaction chamber. The semiconductor substrate is also in a location having a W/G ratio of 15 or greater, where G represents a distance between the main surface of the semiconductor substrate and a ceiling of the reaction chamber.
摘要翻译： 一种进行化学气相沉积的方法，其产生具有小转变宽度的半导体晶体薄膜。 该方法包括使用在一端配备气体入口和另一端的气体出口的冷壁式反应室，以及支撑半导体衬底以使其主表面为水平的半导体衬底支撑件。 使反应气体水平地流过反应室，以在半导体衬底的主表面上生长晶体薄膜。 将半导体衬底布置在反应器室内的距离W内，该距离W是沿着朝向气体出口的方向的最上游位置从半导体衬底的前缘测量的，其中W表示反应室的内部宽度。 半导体衬底也处于W / G比为15或更大的位置，其中G表示半导体衬底的主表面和反应室的顶部之间的距离。
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公开(公告)号：US6048793A
公开(公告)日：2000-04-11
申请号：US546868
申请日：1995-10-23
IPC分类号： C23C16/24 , C23C16/02 , C23C16/44 , C23C16/455 , C23C16/48 , C30B25/10 , H01L21/205 , C23C16/01
CPC分类号： C23C16/481 , C23C16/0209 , C23C16/0236 , C23C16/4401 , C30B25/10
摘要： In a method and an appratus for a thin film growth on a semiconductor crystal substrate, impurities and contaminants absorbed on the inside wall of the reaction vessel are very harmful because these impurities and contaminants will deteriorate the quality of the thin film. A method and an apparatus by which the quantity of these impurities and contaminants absorbed on the inside wall of the reaction vessel can be restrained and removed easily are disclosed in this invention, wherein a semiconductor crystal substrate is mounted in the reaction vessel, and the wall of the reation vessel is cooled forcibly by a coolant while the substrate is under heating procedure to grow a thin film on the substrate by supplying the raw material gas into the reaction vessel. And the temperature of the wall of the reaction vessel during the procedure except the thin film growth is kept higher temperature than the temprature of the wall of the reaction vessel during the thin film growth procedure.
摘要翻译： 在半导体晶体基板上的薄膜生长的方法和设备中，吸收在反应容器的内壁上的杂质和污染物是非常有害的，因为这些杂质和污染物将使薄膜的质量劣化。 在本发明中公开了容易地抑制和去除反应容器的内壁上吸收的这些杂质和污染物的量的方法和装置，其中半导体晶体基板安装在反应容器中，壁 的反应容器被冷却剂强制冷却，同时衬底处于加热过程中，以通过将原料气体供应到反应容器中而在衬底上生长薄膜。 并且在薄膜生长过程中除了薄膜生长之外，反应容器的壁温度保持比反应容器壁温度高的温度。
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公开(公告)号：US5938840A
公开(公告)日：1999-08-17
申请号：US036780
申请日：1998-03-09
IPC分类号： H01L21/205 , C23C16/44 , C23C16/455 , C30B25/14 , C30B23/03
CPC分类号： C23C16/45506 , C23C16/455 , C30B25/14 , Y10T117/10
摘要： In the formation of a thin film on the surface of a semiconductor crystal substrate by using a horizontal type vapor phase growth apparatus, the distribution of the thickness and resistivity of the thin film can be properly obtained by adjusting the concentration distribution of the raw material gas in the mixture gas in the width direction of the reaction vessel over the substrate surface. And in the reaction vessel, carrier gas is supplied from the position close to the transfer port of the substrate, and raw material gas is supplied from the position located in the downstream side of a vortex generation region caused by the flow of the carrier gas.
摘要翻译： 通过使用水平型气相生长装置在半导体晶体基板的表面上形成薄膜，可以通过调整原料气体的浓度分布来适当地获得薄膜的厚度和电阻率的分布 在反应容器的宽度方向上的混合气体的基板表面上。 在反应容器中，从靠近基板的输送口的位置供给载气，从由载气流动引起的涡流产生区域的下游侧的位置供给原料气体。
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公开(公告)号：US5755878A
公开(公告)日：1998-05-26
申请号：US546867
申请日：1995-10-23
IPC分类号： H01L21/205 , C23C16/44 , C23C16/455 , C30B25/14 , C30B23/03
CPC分类号： C23C16/45506 , C23C16/455 , C30B25/14 , Y10T117/10
摘要： In the formation of a thin film on the surface of a semiconductor crystal substrate by using a horizontal type vapor phase growth apparatus, the distribution of the thickness and resistivity of the thin film can be properly obtained by adjusting the concentration distribution of the raw material gas in the mixture gas in the width direction of the reaction vessel over the substrate surface. And in the reaction vessel, carrier gas is supplied from the position close to the transfer port of the substrate, and raw material gas is supplied from the position located in the downstream side of a vortex generation region caused by the flow of the carrier gas.
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公开(公告)号：US5749974A
公开(公告)日：1998-05-12
申请号：US502042
申请日：1995-07-13
IPC分类号： C23C16/44 , C23C16/455 , C30B25/08 , C30B25/14 , H01L21/205 , C23C16/00
CPC分类号： C30B25/08 , C23C16/455 , C30B25/14
摘要： A reactor for chemical vapor deposition which is capable of producing semiconductor crystalline thin films having small transition widths. The reactor includes a cold-wall type reaction chamber that is equipped with a gas inlet at one end and a gas outlet at the other end and a semiconductor substrate support which supports a semiconductor substrate so that a main surface thereof is horizontal. A reactant gas is caused to flow horizontally through the reaction chamber to effect the growing of a crystalline thin film on the main surface of the semiconductor substrate. The semiconductor substrate is arranged within the reactor chamber within a distance W which is measured from a leading edge of the semiconductor substrate at a most upstream position along a direction toward the gas outlet where W indicates an internal width of the reaction chamber. The semiconductor substrate is also in a location having a W/G ratio of 15 or greater, where G represents a distance between the main surface of the semiconductor substrate and a ceiling of the reaction chamber.
摘要翻译： 一种用于化学气相沉积的反应器，其能够产生具有小转变宽度的半导体晶体薄膜。 该反应器包括：冷壁式反应室，其在一端装有气体入口，另一端装有气体出口;以及半导体衬底支撑件，其支撑半导体衬底以使其主表面是水平的。 使反应气体水平地流过反应室，以在半导体衬底的主表面上生长晶体薄膜。 将半导体衬底布置在反应器室内的距离W内，该距离W是沿着朝向气体出口的方向的最上游位置从半导体衬底的前缘测量的，其中W表示反应室的内部宽度。 半导体衬底也处于W / G比为15或更大的位置，其中G表示半导体衬底的主表面和反应室的顶部之间的距离。
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公开(公告)号：US6008128A
公开(公告)日：1999-12-28
申请号：US105155
申请日：1998-06-26
申请人： Hitoshi Habuka , Toru Otsuka , Masatake Katayama
发明人： Hitoshi Habuka , Toru Otsuka , Masatake Katayama
IPC分类号： H01L21/302 , H01L21/205 , H01L21/304 , H01L21/306
CPC分类号： H01L21/02046
摘要： A method for microscopically smoothing a surface of a wafer made of silicon single crystal having a low resistivity. In the method, a native oxide film grown on a surface of a wafer having polished by an ordinary mirror polishing process is removed at a temperature of less than 100.degree. C. with use of a mixture gas of HF and H.sub.2, and then an organic substance deposited thereon is removed at a temperature of less than 800.degree. C. with use of a mixture gas of HCl and H.sub.2. Re-growth of an oxide film is suppressed in a consistent H.sub.2 atmosphere, during which the wafer is substantially not varied in its surface roughness. Then the wafer is thermally treated in an H.sub.2 gas atmosphere at a temperature of not less than 800.degree. C. and less than 1000.degree. C. A process of etching the silicon single crystal substrate and a process of depositing silicon atoms caused by decomposition of a silane compound generated are competitively carried out to thereby soften the microscopic rough surface of the wafer and to improve a smoothness over the smoothness of the mirror-polished surface. Since all process temperatures are set to be less than 1000.degree. C., vaporization of impurities in the wafer can be suppressed and its low resistivity can be secured.
摘要翻译： 一种用于显微平滑由具有低电阻率的硅单晶制成的晶片的表面的方法。 在该方法中，使用HF和H2的混合气体在小于100℃的温度下除去在通过普通镜面抛光工艺抛光的晶片的表面上生长的自然氧化膜，然后用有机 使用HCl和H2的混合气体在小于800℃的温度下除去沉积的物质。 在一致的H2气氛中抑制氧化膜的再生长，在此期间晶片的表面粗糙度基本上不变化。 然后将晶片在不低于800℃且小于1000℃的H 2气体气氛中进行热处理。蚀刻硅单晶衬底的工艺和由分解所形成的硅原子沉积的工艺 产生的硅烷化合物被竞争地进行，从而软化晶片的微观粗糙表面，并提高镜面抛光表面的平滑度上的平滑度。 由于将所有工艺温度设定为小于1000℃，因此能够抑制晶片中杂质的蒸发，能够确保低电阻率。
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公开(公告)号：US5696034A
公开(公告)日：1997-12-09
申请号：US520189
申请日：1995-08-28
申请人： Masatake Katayama , Isao Moroga , Isao Shirai , Youichi Kumaki , Akio Kasahara
发明人： Masatake Katayama , Isao Moroga , Isao Shirai , Youichi Kumaki , Akio Kasahara
IPC分类号： H01L29/78 , H01L21/18 , H01L21/20 , H01L21/205 , H01L21/304 , H01L21/331 , H01L21/336 , H01L29/739 , H01L21/465
CPC分类号： H01L29/66333 , H01L21/187 , Y10S148/135
摘要： A method for producing a semiconductor substrate in which no autodoping occurs and slip dislocations in the substrate are reduced. The method involves forming a silicon nitride film on the backside of an n.sup.- -silicon substrate, epitaxially growing an n.sup.+ -buffer layer and a p.sup.+ -layer on the front side of the n.sup.- -silicon substrate, and decreasing the thickness of the n.sup.- -silicon substrate from the backside.
摘要翻译： 不产生自动掺杂的半导体衬底的制造方法和衬底中的滑移位错减小。 该方法包括在n - 硅衬底的背面上形成氮化硅膜，在n-硅衬底的正面外延生长n +缓冲层和p +层，并减小n 硅衬底从背面。
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公开(公告)号：US5183783A
公开(公告)日：1993-02-02
申请号：US811958
申请日：1991-12-23
申请人： Yutaka Ohta , Konomu Ohki , Masatake Katayama
发明人： Yutaka Ohta , Konomu Ohki , Masatake Katayama
IPC分类号： H01L21/762
CPC分类号： H01L21/76297 , Y10S438/928 , Y10S438/977
摘要： Single crystal silicon islands in a dielectric-separation substrate are separated completely and finished in a uniform thickness by preparatorily denuding a single crystal silicon substrate of a warpage suffered to occur therein.This dielectric-separation substrate is produced by a method which comprises forming a thermal oxide film on a single crystal silicon substrate having grooves incised in advance therein, then forming an irreversibly thermally shrinkable film on the rear surface of said single crystal silicon substrate prior to depositing a polycrystalline silicon thereon, then depositing a polycrystalline silicon on said single crystal silicon substrate, and thereafter grinding said single crystal silicon substrate in conjunction with said irreversibly thermally shrinkable film.
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10.发明授权Heat treatment jig for semiconductor wafers and a method for treating a surface of the same 失效用于半导体晶片的热处理夹具及其表面处理方法
公开(公告)号：US5759426A
公开(公告)日：1998-06-02
申请号：US558540
申请日：1995-11-16
IPC分类号： H01L21/22 , H01L21/31 , H01L21/673 , H01L21/302
CPC分类号： C04B41/87 , C04B41/5066 , C04B41/52 , C04B41/89 , C30B35/00
摘要： A silicon nitride layer 12b is thermally grown on the topmost surface of the heat treatment jig 12 composed of silicon or silicon carbide in a nitrogen ambience. The silicon nitride layer 12b is thermally grown in a nitrogen ambience in the temperature range of 1,100.degree. C.-1,300.degree. C. It is desirable to remove slightly the surface of the jig by, for example, hydrogen etching before thermally growing the silicon nitride layer 12b. After the etching, a silicon oxide layer can be thermally grown on the jig surface in an oxygen ambience before thermally growing the silicon nitride layer 12b.
摘要翻译： 氮化硅层12b在氮气氛中由硅或碳化硅构成的热处理夹具12的最上表面热生长。 氮化硅层12b在1100℃-1300℃的温度范围内在氮气气氛中热生长。期望通过例如在将氮化硅热生长之前的氢蚀刻稍微去除夹具的表面 层12b。 在蚀刻之后，在氧化氮化物层12b热生长之前，可以在氧气氛中在夹具表面上热生长氧化硅层。
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