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公开(公告)号：US20060141775A1
公开(公告)日：2006-06-29
申请号：US11196883
申请日：2005-08-04
IPC分类号： H01L21/4763 , H01L21/302
CPC分类号： H01L21/76807 , H01L21/02063
摘要： A method of forming a semiconductor structure comprises providing a substrate comprising a layer of a material formed on a first surface of the substrate. At least one recess is formed in the layer of material. The formation of the at least one recess comprises performing a dry etching process. A contamination layer formed in the dry etching process is removed from a second surface of the substrate. Thus, contaminations of tools used in later stages of the manufacturing process resulting from flakes splitting off the contamination layer may be avoided.
摘要翻译： 形成半导体结构的方法包括提供包括形成在基板的第一表面上的材料层的基板。 在材料层中形成至少一个凹部。 至少一个凹部的形成包括进行干蚀刻工艺。 在干蚀刻工艺中形成的污染层从衬底的第二表面去除。 因此，可以避免在由污染层分离的薄片产生的制造过程的后期阶段使用的工具的污染。
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2.发明授权公开(公告)号：US07259091B2
公开(公告)日：2007-08-21
申请号：US11112509
申请日：2005-04-22
IPC分类号： H01L21/4763
CPC分类号： H01L21/02063 , H01L21/76802 , H01L21/76814
摘要： By performing a wet chemical process after etching a via, contaminations may be removed and a thin passivation layer may be formed that may then be readily removed in a subsequent sputter etch process for forming a barrier/adhesion layer. In a particular embodiment, the wet chemical process may be performed on the basis of fluoric acid and triazole or a compound thereof.
摘要翻译： 通过在蚀刻通孔之后进行湿化学处理，可以去除污染物，并且可以形成薄的钝化层，然后可以在随后的溅射蚀刻工艺中容易地去除以形成阻挡层/粘附层。 在一个具体实施方案中，湿化学方法可以基于氟酸和三唑或其化合物进行。
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3.发明申请公开(公告)号：US20060024951A1
公开(公告)日：2006-02-02
申请号：US11112509
申请日：2005-04-22
IPC分类号： H01L21/4763
CPC分类号： H01L21/02063 , H01L21/76802 , H01L21/76814
摘要： By performing a wet chemical process after etching a via, contaminations may be removed and a thin passivation layer may be formed that may then be readily removed in a subsequent sputter etch process for forming a barrier/adhesion layer. In a particular embodiment, the wet chemical process may be performed on the basis of fluoric acid and triazole or a compound thereof.
摘要翻译： 通过在蚀刻通孔之后进行湿化学处理，可以去除污染物，并且可以形成薄的钝化层，然后可以在随后的溅射蚀刻工艺中容易地去除以形成阻挡层/粘附层。 在一个具体实施方案中，湿化学方法可以基于氟酸和三唑或其化合物进行。
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4.发明授权Method of reducing contamination by removing an interlayer dielectric from the substrate edge 失效通过从衬底边缘去除层间电介质来减少污染的方法公开(公告)号：US07410885B2
公开(公告)日：2008-08-12
申请号：US11383903
申请日：2006-05-17
IPC分类号： H01L21/30
CPC分类号： H01L21/76802 , H01L21/02087 , H01L21/31111 , H01L21/32134 , H01L21/76808 , H01L21/76843
摘要： By performing at least one additional wet chemical etch process in the edge region and in particular on the bevel of a substrate during the formation of a metallization layer, the dielectric material, especially the low-k dielectric material, may be reliably removed from the bevel prior to the formation of any barrier and metal layers. Moreover, an additional wet chemical etch process may be performed after the deposition of the metal to remove any unwanted metal and barrier material from the edge region and the bevel. Accordingly, defect issues and contamination of substrates and process tools may be efficiently reduced.
摘要翻译： 通过在形成金属化层期间在边缘区域中，特别是在衬底的斜面上执行至少一个额外的湿化学蚀刻工艺，可以将电介质材料，特别是低k电介质材料从斜面可靠地移除 在形成任何阻挡层和金属层之前。 此外，可以在沉积金属以从边缘区域和斜面去除任何不需要的金属和阻挡材料之后进行另外的湿化学蚀刻工艺。 因此，可以有效地降低基板和加工工具的缺陷问题和污染。
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5.发明申请METHOD OF REDUCING CONTAMINATION BY REMOVING AN INTERLAYER DIELECTRIC FROM THE SUBSTRATE EDGE 失效通过从基板边缘移除介质层来减少污染的方法公开(公告)号：US20070026670A1
公开(公告)日：2007-02-01
申请号：US11383903
申请日：2006-05-17
IPC分类号： H01L21/4763
CPC分类号： H01L21/76802 , H01L21/02087 , H01L21/31111 , H01L21/32134 , H01L21/76808 , H01L21/76843
摘要： By performing at least one additional wet chemical etch process in the edge region and in particular on the bevel of a substrate during the formation of a metallization layer, the dielectric material, especially the low-k dielectric material, may be reliably removed from the bevel prior to the formation of any barrier and metal layers. Moreover, an additional wet chemical etch process may be performed after the deposition of the metal to remove any unwanted metal and barrier material from the edge region and the bevel. Accordingly, defect issues and contamination of substrates and process tools may be efficiently reduced.
摘要翻译： 通过在形成金属化层期间在边缘区域中，特别是在衬底的斜面上执行至少一个额外的湿化学蚀刻工艺，可以将电介质材料，特别是低k电介质材料从斜面可靠地移除 在形成任何阻挡层和金属层之前。 此外，可以在沉积金属以从边缘区域和斜面去除任何不需要的金属和阻挡材料之后进行另外的湿化学蚀刻工艺。 因此，可以有效地降低基板和加工工具的缺陷问题和污染。
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6.发明申请Technique for creating different mechanical strain in different channel regions by forming an etch stop layer stack having differently modified intrinsic stress 有权通过形成具有不同修正的固有应力的蚀刻停止层堆叠在不同沟道区域中产生不同的机械应变的技术公开(公告)号：US20060091471A1
公开(公告)日：2006-05-04
申请号：US11150635
申请日：2005-06-10
IPC分类号： H01L29/78 , H01L21/8238 , H01L21/469
CPC分类号： H01L29/4933 , H01L21/31116 , H01L21/7624 , H01L21/823807 , H01L21/823835 , H01L29/665 , H01L29/7843
摘要： A technique is provided that allows the formation of contact etch stop layers having different intrinsic stress for different transistors, while substantially avoiding any device degradation owing to the partial removal of the contact etch stop layer. Hereby, an additional thin etch stop layer is provided prior to the formation of the contact etch stop layers, thereby substantially maintaining the integrity of metal silicide regions, when a portion of an initially deposited contact etch stop layer is removed.
摘要翻译： 提供了允许形成对于不同晶体管具有不同固有应力的接触蚀刻停止层的技术，同时基本上避免了由于部分去除接触蚀刻停止层而导致的任何器件劣化。 因此，在形成接触蚀刻停止层之前，提供另外的薄蚀刻停止层，从而当初始沉积的接触蚀刻停止层的一部分被去除时，基本上保持金属硅化物区域的完整性。
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7.发明授权Technique for creating different mechanical strain in different channel regions by forming an etch stop layer stack having differently modified intrinsic stress 有权通过形成具有不同修正的固有应力的蚀刻停止层堆叠在不同沟道区域中产生不同的机械应变的技术公开(公告)号：US07396718B2
公开(公告)日：2008-07-08
申请号：US11150635
申请日：2005-06-10
IPC分类号： H01L21/8238
CPC分类号： H01L29/4933 , H01L21/31116 , H01L21/7624 , H01L21/823807 , H01L21/823835 , H01L29/665 , H01L29/7843
摘要： A technique is provided that allows the formation of contact etch stop layers having different intrinsic stress for different transistors, while substantially avoiding any device degradation owing to the partial removal of the contact etch stop layer. Hereby, an additional thin etch stop layer is provided prior to the formation of the contact etch stop layers, thereby substantially maintaining the integrity of metal silicide regions, when a portion of an initially deposited contact etch stop layer is removed.
摘要翻译： 提供了允许形成对于不同晶体管具有不同固有应力的接触蚀刻停止层的技术，同时基本上避免了由于部分去除接触蚀刻停止层而导致的任何器件劣化。 因此，在形成接触蚀刻停止层之前，提供另外的薄蚀刻停止层，从而当初始沉积的接触蚀刻停止层的一部分被去除时，基本上保持金属硅化物区域的完整性。
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8.发明授权Void sealing in a dielectric material of a contact level of a semiconductor device comprising closely spaced transistors 有权在包括紧密间隔的晶体管的半导体器件的接触电平的电介质材料中的空隙密封公开(公告)号：US08129276B2
公开(公告)日：2012-03-06
申请号：US12693545
申请日：2010-01-26
申请人： Ralf Richter , Kai Frohberg , Holger Schuehrer
发明人： Ralf Richter , Kai Frohberg , Holger Schuehrer
IPC分类号： H01L23/48 , H01L21/768
CPC分类号： H01L21/823475 , H01L21/7682 , H01L21/76829 , H01L21/76831 , H01L21/76897 , H01L21/823425
摘要： In sophisticated semiconductor devices, a contact structure may be formed on the basis of a void positioned between closely spaced transistor elements wherein disadvantageous metal migration along the void may be suppressed by sealing the voids after etching a contact opening and prior to filling in the contact metal. Consequently, significant yield losses may be avoided in well-established dual stress liner approaches while, at the same time, superior device performance may be achieved.
摘要翻译： 在复杂的半导体器件中，可以基于位于紧密间隔的晶体管元件之间的空隙形成接触结构，其中沿着空隙的不利的金属迁移可以通过在蚀刻接触开口之后并且在填充接触金属之前密封空隙来抑制 。 因此，在已建立的双重应力衬垫方法中可以避免显着的屈服损失，同时可以实现优异的装置性能。
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9.发明申请REDUCING METAL VOIDS IN A METALLIZATION LAYER STACK OF A SEMICONDUCTOR DEVICE BY PROVIDING A DIELECTRIC BARRIER LAYER 有权通过提供介电阻挡层在半导体器件的金属层堆叠中减少金属离子公开(公告)号：US20100109161A1
公开(公告)日：2010-05-06
申请号：US12565323
申请日：2009-09-23
申请人： Holger Schuehrer , Juergen Boemmels
发明人： Holger Schuehrer , Juergen Boemmels
IPC分类号： H01L23/48 , H01L21/768
CPC分类号： H01L21/76831 , H01L21/76814 , H01L21/76832 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： Metallization systems on the basis of copper and low-k dielectric materials may be efficiently formed by providing an additional dielectric material of enhanced surface conditions after the patterning of the low-k dielectric material. Consequently, defects such as isolated copper voids and the like may be reduced without significantly affecting overall performance of the metallization system.
摘要翻译： 基于铜和低k电介质材料的金属化系统可以通过在低k介电材料的图案化之后提供增强的表面条件的附加电介质材料来有效地形成。 因此，可以降低诸如隔离铜空隙等的缺陷，而不会显着影响金属化系统的整体性能。
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10.发明申请TECHNIQUE FOR NON-DESTRUCTIVE METAL DELAMINATION MONITORING IN SEMICONDUCTOR DEVICES 有权半导体器件非破坏性金属分层监测技术公开(公告)号：US20070178691A1
公开(公告)日：2007-08-02
申请号：US11536730
申请日：2006-09-29
申请人： Ralf Richter , Carsten Peters , Holger Schuehrer
发明人： Ralf Richter , Carsten Peters , Holger Schuehrer
IPC分类号： H01L21/4763
CPC分类号： H01L23/544 , H01L21/7684 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： By providing large area metal plates in combination with respective peripheral areas of increased adhesion characteristics, delamination events may be effectively monitored substantially without negatively affecting the overall performance of the semiconductor device during processing and operation. In some illustrative embodiments, dummy vias may be provided at the periphery of a large area metal plate, thereby allowing delamination in the central area while substantially avoiding a complete delamination of the metal plate. Consequently, valuable information with respect to mechanical characteristics of the metallization layer as well as process flow parameters may be efficiently monitored.
摘要翻译： 通过提供大面积金属板与相应的周边区域结合增加的粘合特性，可以有效地监测分层事件，而不会在加工和操作过程中不影响半导体器件的整体性能。 在一些示例性实施例中，可以在大面积金属板的周边设置虚拟通孔，从而允许中心区域分层，同时基本避免金属板的完全分层。 因此，可以有效地监测关于金属化层的机械特性以及工艺流程参数的有价值的信息。
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