SITAGLIPTIN INTERMEDIATE COMPOUNDS, PREPARATION METHODS AND USES THEREOF
    1.
    发明申请
    SITAGLIPTIN INTERMEDIATE COMPOUNDS, PREPARATION METHODS AND USES THEREOF 有权
    SITAGLIPTIN中间体化合物,其制备方法及其用途

    公开(公告)号:US20130012735A1

    公开(公告)日:2013-01-10

    申请号:US13636486

    申请日:2011-03-22

    申请人: Hongjun Gao Min Li

    发明人: Hongjun Gao Min Li

    摘要: Sitagliptin intermediate compounds of formula (f) and methods of preparation and use thereof are disclosed. Compounds of formula (f) are prepared by the following steps: compounds of formula (a) are subjected to electrophilic reaction with benzyl halides to form compounds of formula (b), which then react with compounds of formula (i) to form novel compounds of formula (e). Gignard agents formed from 2,4,5-trifluoro brmobenzene and magnesium metal react with compounds of formula (e) to afford compounds of formula (f), which are novel intermediates for the preparation of Sitagliptin intermediates of formula (g). Compounds of formula (f) are subjected to reduction by Pd/C, debenzylation, substitution of protecting group to form compounds of formula (g). Compounds of formula (a), (b), (i), (e), (f), and (g) have the following structures, in which R is protecting group of carboxyl and R2 is (substituted) hydrocarbyl.

    摘要翻译: 公开了式(f)的西格列汀中间体化合物及其制备和使用方法。 通过以下步骤制备式(f)化合物:使式(a)化合物与苄基卤进行亲电子反应,形成式(b)化合物,然后与式(ⅰ)化合物反应形成新化合物 的式(e)。 由2,4,5-三氟Brmobenzene和镁金属形成的Gignard试剂与式(e)化合物反应,得到式(f)化合物,它们是制备式(g)的西他列汀中间体的新型中间体。 式(f)的化合物通过Pd / C进行还原,脱苄基,保护基的取代形成式(g)的化合物。 式(a),(b),(i),(e),(f)和(g)的化合物具有以下结构,其中R是保护基团的羧基,R 2是(取代的)烃基。

    Sitagliptin intermediate compounds, preparation methods and uses thereof
    2.
    发明授权
    Sitagliptin intermediate compounds, preparation methods and uses thereof 有权
    西他列汀中间体化合物,其制备方法和用途

    公开(公告)号:US08710255B2

    公开(公告)日:2014-04-29

    申请号:US13636486

    申请日:2011-03-22

    申请人: Hongjun Gao Min Li

    发明人: Hongjun Gao Min Li

    摘要: Sitagliptin intermediate compounds of formula (f) and methods of preparation and use thereof are disclosed. Compounds of formula (f) are prepared by the following steps: compounds of formula (a) are subjected to electrophilic reaction with benzyl halides to form compounds of formula (b), which then react with compounds of formula (i) to form novel compounds of formula (e). Gignard agents formed from 2,4,5-trifluoro bromobenzene and magnesium metal react with compounds of formula (e) to afford compounds of formula (f), which are novel intermediates for the preparation of Sitagliptin intermediates of formula (g). Compounds of formula (f) are subjected to reduction by Pd/C, debenzylation, substitution of protecting group to form compounds of formula (g). Compounds of formula (a), (b), (i), (e), (f), and (g) have the following structures, in which R is protecting group of carboxyl and R2 is (substituted) hydrocarbyl.

    摘要翻译: 公开了式(f)的西格列汀中间体化合物及其制备和使用方法。 通过以下步骤制备式(f)化合物:使式(a)化合物与苄基卤进行亲电子反应,形成式(b)化合物,然后与式(ⅰ)化合物反应形成新化合物 的式(e)。 由2,4,5-三氟溴苯和镁金属形成的Gignard试剂与式(e)化合物反应,得到式(f)化合物,其为制备式(g)的西格列汀中间体的新型中间体。 式(f)的化合物通过Pd / C进行还原,脱苄基,保护基的取代形成式(g)的化合物。 式(a),(b),(i),(e),(f)和(g)的化合物具有以下结构,其中R是保护基团的羧基,R 2是(取代的)烃基。

    Method for isolating active regions in germanium-based MOS device
    9.
    发明授权
    Method for isolating active regions in germanium-based MOS device 有权
    在锗系MOS器件中分离有源区的方法

    公开(公告)号:US09147597B2

    公开(公告)日:2015-09-29

    申请号:US14344050

    申请日:2012-06-14

    摘要: Disclosed herein is a method for isolating active regions in a germanium-based MOS device. A surface of a germanium-based substrate is covered by a thin polysilicon layer or a poly-SiGe layer, and an isolation structure of germanium dioxide covered by a silicon dioxide layer or a SiGe oxide layer on top is formed by means of two steps of oxidation in a case of the active regions are protected. Such two steps of oxidation using the polysilicon layer or the poly-SiGe layer as a sacrificial layer is advantageous to improve the isolation quality of a fabricated germanium dioxide and to reduce a beak effect occurred during a local field oxygen oxidation so as to dramatically elevate the performance of the germanium device.

    摘要翻译: 本文公开了一种用于隔离锗基MOS器件中的有源区的方法。 基于锗的衬底的表面被薄的多晶硅层或多晶硅层覆盖,并且通过两个步骤形成由二氧化硅层或顶部的SiGe氧化物层覆盖的二氧化锗的隔离结构 在活性区域的情况下的氧化被保护。 使用多晶硅层或多晶硅层作为牺牲层的这两个氧化步骤有利于提高制造的二氧化锗的隔离质量,并且减少在局部场氧氧化期间发生的喙效应,从而显着提升 锗器件的性能。

    Heating pump
    10.
    发明授权
    Heating pump 有权
    加热泵

    公开(公告)号:US09145901B2

    公开(公告)日:2015-09-29

    申请号:US13446807

    申请日:2012-04-13

    摘要: A heating pump includes an electric motor, a pump housing fixed to the motor, an impeller driven by the motor, and a ring heater with an inner hole for heating fluid in the pump housing. The pump housing has a pump chamber and a pump inlet and a pump outlet which are in fluid communication with the pump chamber. The impeller is received in the pump housing and having an impeller inlet and a plurality of impeller outlets. The ring heater is disposed inside the pump chamber and between the pump inlet and the impeller. The impeller inlet is in fluid communication with the pump inlet via the inner hole.

    摘要翻译: 加热泵包括电动机,固定到电动机的泵壳体,由电动机驱动的叶轮,以及具有用于加热泵壳体中的流体的内孔的环形加热器。 泵壳体具有与泵室流体连通的泵室和泵入口和泵出口。 叶轮被容纳在泵壳体中并且具有叶轮入口和多个叶轮出口。 环形加热器设置在泵室内部和泵入口与叶轮之间。 叶轮入口通过内孔与泵入口流体连通。