摘要:
A material processing system including a process tool and a process performance prediction system. The performance prediction system includes sensors coupled to the tool to measure tool data and a controller coupled to the sensors to receive tool data, where the controller is configured to predict the process performance for the tool using the tool data. A method for detecting a fault in a material processing system using a process performance prediction model is also provided. The method includes preparing the tool, initiating a process in the tool, and recording tool data to form to a tool data matrix. The method also includes performing a matrix multiplication of the tool data matrix and a correlation matrix to form predicted process performance data, where the correlation matrix includes the performance prediction model, comparing the predicted data with target data, and determining a fault condition of the processing system from the comparing step.
摘要:
A method and apparatus is presented for using a pressure control system to monitor a plasma processing system. By monitoring variations in the state of the pressure control system, a fault condition, an erroneous fault condition, or a service condition can be detected. For example, the service condition can include monitoring the accumulation of residue between successive preventative maintenance events.
摘要:
The present invention presents a plasma processing system for etching a layer on a substrate comprising a process chamber, a diagnostic system coupled to the process chamber and configured to measure at least one endpoint signal, and a controller coupled to the diagnostic system and configured to determine in-situ at least one of an etch rate and an etch rate uniformity of the etching from the endpoint signal. Furthermore, an in-situ method of determining an etch property for etching a layer on a substrate in a plasma processing system is presented comprising the steps: providing a thickness of the layer; etching the layer on the substrate; measuring at least one endpoint signal using a diagnostic system coupled to the plasma processing system, wherein the endpoint signal comprises an endpoint transition; and determining the etch rate from a ratio of the thickness to a difference between a time during the endpoint transition and a starting time of the etching.
摘要:
A method of automatically configuring an Advanced Process Control (APC) system for a semiconductor manufacturing environment in which an auto-configuration script is generated for executing an auto-configuration program. The auto-configuration script activates default values for input to the auto-configuration program. The auto-configuration script is executed to generate an enabled parameter file output from the auto-configuration program. The enabled parameter file identifies parameters for statistical process control (SPC) chart generation.
摘要:
A method and system for determining a substrate type during a seasoning process is presented. An optical signal is acquired from a process in a plasma processing system, and the optical signal is compared to a pre-determined threshold value. Depending upon the comparison, the substrate type is determined to be of a correct type, or an incorrect type.
摘要:
According to an embodiment of the present invention, a material processing systeme (1) including a process tool (10) and a process performance control system (100). The process performance control system (100) includes a process performance controller (55) coupled to the process tool (10), where the process performance controller (55) includes a process performance prediction model (110), a process recipe correction filter (120), a process controller (130), and process performance model correction algorithm (150). The process performance prediction model (110) is configured to receive tool data from a plurality of sensors coupled to process tool (10) and to predict process performance data. The process recipe correction filter (120) is coupled to the process performance prediction model (110) and configured to receive predicted process performance data and generate a process recipe correction for run-to-run process control. The process controller (130) is coupled to the process recipe correction filter (120) and is configured to update a process recipe according to the process recipe correction.
摘要:
The embodiments disclose a method to protect magnetic bits during carbon field planarization, including depositing a stop layer upon magnetic bits and magnetic film of a patterned stack, depositing a carbon fill layer on the stop layer and using the stop layer during planarization and etch-back of the carbon field to protect the patterned stack magnetic bits during the carbon field planarization.
摘要:
Methods and structures for the fabrication of perpendicular thin film heads are disclosed. Prior to the deposition of shield structures, capped seed layers having a dual layer structure are utilized, improving photo resist adhesion and plated shield adhesion, without the need to deposit, then remove, traditional inorganic anti-reflection coatings prior to shield plating.
摘要:
One preferred method for use in making a device structure with use of the resist channel shrinking solution includes the steps of forming a first pedestal portion within a channel of a patterned resist; applying a resist channel shrinking solution comprising a resist channel shrinking film and corrosion inhibitors within the channel of the patterned resist; baking the resist channel shrinking solution over the patterned resist to thereby reduce a width of the channel of the patterned resist; removing the resist channel shrinking solution; and forming a second pedestal portion within the reduced-width channel of the patterned resist. Advantageously, the oxide layer and the corrosion inhibitors of the resist channel shrinking solution reduce corrosion in the pedestal during the act of baking the resist channel shrinking solution.
摘要:
Methods and structures for the fabrication of perpendicular thin film heads are disclosed. Prior to the deposition of shield structures, seed layers having anti-reflective properties are utilized, eliminating the need to deposit, then remove, traditional inorganic anti-reflection coatings prior to shield plating.