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公开(公告)号:US08679707B2
公开(公告)日:2014-03-25
申请号:US13564334
申请日:2012-08-01
申请人: Hsin-Chang Lee , Yun-Yue Lin , Pei-Cheng Hsu , Chia-Jen Chen , Ta-Cheng Lien , Anthony Yen
发明人: Hsin-Chang Lee , Yun-Yue Lin , Pei-Cheng Hsu , Chia-Jen Chen , Ta-Cheng Lien , Anthony Yen
摘要: A method of fabricating an extreme ultraviolet (EUV) mask is disclosed. The method includes providing a substrate, forming a reflective multilayer (ML) over the substrate, forming a buffer layer over the reflective ML, forming an absorption layer over the buffer layer and forming a capping layer over the absorption layer. The capping layer and the absorption layer are etched to form the EUV mask.
摘要翻译: 公开了一种制造极紫外(EUV)掩模的方法。 该方法包括提供衬底,在衬底上形成反射多层(ML),在反射ML上形成缓冲层,在缓冲层上形成吸收层,并在吸收层上形成覆盖层。 蚀刻覆盖层和吸收层以形成EUV掩模。
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公开(公告)号:US20140038088A1
公开(公告)日:2014-02-06
申请号:US13564334
申请日:2012-08-01
申请人: Hsin-Chang Lee , Yun-Yue Lin , Pei-Cheng Hsu , Chia-Jen Chen , Ta-Cheng Lien , Anthony Yen
发明人: Hsin-Chang Lee , Yun-Yue Lin , Pei-Cheng Hsu , Chia-Jen Chen , Ta-Cheng Lien , Anthony Yen
IPC分类号: G03F1/24
摘要: A method of fabricating an extreme ultraviolet (EUV) mask is disclosed. The method includes providing a substrate, forming a reflective multilayer (ML) over the substrate, forming a buffer layer over the reflective ML, forming an absorption layer over the buffer layer and forming a capping layer over the absorption layer. The capping layer and the absorption layer are etched to form the EUV mask.
摘要翻译: 公开了一种制造极紫外(EUV)掩模的方法。 该方法包括提供衬底,在衬底上形成反射多层(ML),在反射ML上形成缓冲层,在缓冲层上形成吸收层,并在吸收层上形成覆盖层。 蚀刻覆盖层和吸收层以形成EUV掩模。
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公开(公告)号:US08974988B2
公开(公告)日:2015-03-10
申请号:US13451767
申请日:2012-04-20
申请人: Yun-Yue Lin , Ta-Cheng Lien , Hsin-Chang Lee , Anthony Yen , Chia-Jen Chen
发明人: Yun-Yue Lin , Ta-Cheng Lien , Hsin-Chang Lee , Anthony Yen , Chia-Jen Chen
IPC分类号: G03F1/48
摘要: A photomask includes a low thermal expansion material (LTEM) substrate, a patterned opaque layer over the LTEM substrate, and a patterned capping layer over the opaque layer. The patterned capping layer includes a transition metal material for suppressing haze growth, such as metal oxide, metal nitride, or metal oxynitride. The material in the capping layer reacts with a hydrogenic compound from a lithography environment to for an atomic level hydrogen passivation layer. The passivation layer has superior ability to suppress photo-induced haze defect growth on the photomask surface, to improve production cycle time and reduce the production cost.
摘要翻译: 光掩模包括低热膨胀材料(LTEM)衬底,在LTEM衬底上的图案化不透明层,以及在不透明层上的图案化覆盖层。 图案化覆盖层包括用于抑制雾度生长的过渡金属材料,例如金属氧化物,金属氮化物或金属氮氧化物。 覆盖层中的材料与来自光刻环境的氢化合物与原子级氢钝化层反应。 钝化层在光掩模表面上具有优异的抑制光致霾缺陷生长的能力,提高生产周期时间,降低生产成本。
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公开(公告)号:US08916482B2
公开(公告)日:2014-12-23
申请号:US13437075
申请日:2012-04-02
申请人: Hsin-Chang Lee , Yun-Yue Lin , Hung-Chang Hsieh , Chia-Jen Chen , Yih-Chen Su , Ta-Cheng Lien , Anthony Yen
发明人: Hsin-Chang Lee , Yun-Yue Lin , Hung-Chang Hsieh , Chia-Jen Chen , Yih-Chen Su , Ta-Cheng Lien , Anthony Yen
IPC分类号: H01L21/31
CPC分类号: G03F1/76
摘要: A method of making a lithography mask with a stress-relief treatment is disclosed. The method includes providing a substrate and depositing an opaque layer on the substrate. The opaque layer is patterned to form a patterned mask. A stress-relief treatment is applied to the patterned mask by using an radiation exposure.
摘要翻译: 公开了一种制造具有应力消除处理的光刻掩模的方法。 该方法包括提供衬底并在衬底上沉积不透明层。 将不透明层图案化以形成图案化掩模。 通过使用辐射照射对图案化掩模施加应力消除处理。
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公开(公告)号:US20130260289A1
公开(公告)日:2013-10-03
申请号:US13437565
申请日:2012-04-02
申请人: Yun-Yue Lin , Hsin-Chang Lee , Chia-Jen Chen , Ta-Cheng Lien , Anthony Yen
发明人: Yun-Yue Lin , Hsin-Chang Lee , Chia-Jen Chen , Ta-Cheng Lien , Anthony Yen
摘要: A method of fabricating a lithography mask with carbon-based-charging-dissipation (CBCD) layer is disclosed. The method includes providing a substrate, depositing an opaque layer on the substrate, coating a photoresist and depositing a charging dissipation layer on the photoresist. The photoresist is patterned by an electron-beam writing. The CBCD layer is removed during developing the photoresist.
摘要翻译: 公开了一种制造具有碳基带电耗散(CBCD)层的光刻掩模的方法。 该方法包括提供衬底,在衬底上沉积不透明层,涂覆光致抗蚀剂并在光致抗蚀剂上沉积充电耗散层。 光刻胶通过电子束写入进行图案化。 在显影光致抗蚀剂期间去除CBCD层。
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公开(公告)号:US20130280644A1
公开(公告)日:2013-10-24
申请号:US13451767
申请日:2012-04-20
申请人: Yun-Yue Lin , Ta-Cheng Lien , Hsin-Chang Lee , Anthony Yen , Chia-Jen Chen
发明人: Yun-Yue Lin , Ta-Cheng Lien , Hsin-Chang Lee , Anthony Yen , Chia-Jen Chen
摘要: A photomask includes a low thermal expansion material (LTEM) substrate, a patterned opaque layer over the LTEM substrate, and a patterned capping layer over the opaque layer. The patterned capping layer includes a transition metal material for suppressing haze growth, such as metal oxide, metal nitride, or metal oxynitride. The material in the capping layer reacts with a hydrogenic compound from a lithography environment to for an atomic level hydrogen passivation layer. The passivation layer has superior ability to suppress photo-induced haze defect growth on the photomask surface, to improve production cycle time and reduce the production cost.
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公开(公告)号:US20130260573A1
公开(公告)日:2013-10-03
申请号:US13437075
申请日:2012-04-02
申请人: Hsin-Chang Lee , Yun-Yue Lin , Hung-Chang Hsieh , Chia-Jen Chen , Yih-Chen Su , Ta-Cheng Lien , Anthony Yen
发明人: Hsin-Chang Lee , Yun-Yue Lin , Hung-Chang Hsieh , Chia-Jen Chen , Yih-Chen Su , Ta-Cheng Lien , Anthony Yen
IPC分类号: H01L21/033
CPC分类号: G03F1/76
摘要: A method of making a lithography mask with a stress-relief treatment is disclosed. The method includes providing a substrate and depositing an opaque layer on the substrate. The opaque layer is patterned to form a patterned mask. A stress-relief treatment is applied to the patterned mask by using an radiation exposure.
摘要翻译: 公开了一种制造具有应力消除处理的光刻掩模的方法。 该方法包括提供衬底并在衬底上沉积不透明层。 将不透明层图案化以形成图案化掩模。 通过使用辐射照射对图案化掩模施加应力消除处理。
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