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公开(公告)号：US20130260289A1
公开(公告)日：2013-10-03
申请号：US13437565
申请日：2012-04-02
申请人： Yun-Yue Lin , Hsin-Chang Lee , Chia-Jen Chen , Ta-Cheng Lien , Anthony Yen
发明人： Yun-Yue Lin , Hsin-Chang Lee , Chia-Jen Chen , Ta-Cheng Lien , Anthony Yen
摘要： A method of fabricating a lithography mask with carbon-based-charging-dissipation (CBCD) layer is disclosed. The method includes providing a substrate, depositing an opaque layer on the substrate, coating a photoresist and depositing a charging dissipation layer on the photoresist. The photoresist is patterned by an electron-beam writing. The CBCD layer is removed during developing the photoresist.
摘要翻译： 公开了一种制造具有碳基带电耗散（CBCD）层的光刻掩模的方法。 该方法包括提供衬底，在衬底上沉积不透明层，涂覆光致抗蚀剂并在光致抗蚀剂上沉积充电耗散层。 光刻胶通过电子束写入进行图案化。 在显影光致抗蚀剂期间去除CBCD层。
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公开(公告)号：US08679707B2
公开(公告)日：2014-03-25
申请号：US13564334
申请日：2012-08-01
申请人： Hsin-Chang Lee , Yun-Yue Lin , Pei-Cheng Hsu , Chia-Jen Chen , Ta-Cheng Lien , Anthony Yen
发明人： Hsin-Chang Lee , Yun-Yue Lin , Pei-Cheng Hsu , Chia-Jen Chen , Ta-Cheng Lien , Anthony Yen
摘要： A method of fabricating an extreme ultraviolet (EUV) mask is disclosed. The method includes providing a substrate, forming a reflective multilayer (ML) over the substrate, forming a buffer layer over the reflective ML, forming an absorption layer over the buffer layer and forming a capping layer over the absorption layer. The capping layer and the absorption layer are etched to form the EUV mask.
摘要翻译： 公开了一种制造极紫外（EUV）掩模的方法。 该方法包括提供衬底，在衬底上形成反射多层（ML），在反射ML上形成缓冲层，在缓冲层上形成吸收层，并在吸收层上形成覆盖层。 蚀刻覆盖层和吸收层以形成EUV掩模。
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公开(公告)号：US08974988B2
公开(公告)日：2015-03-10
申请号：US13451767
申请日：2012-04-20
申请人： Yun-Yue Lin , Ta-Cheng Lien , Hsin-Chang Lee , Anthony Yen , Chia-Jen Chen
发明人： Yun-Yue Lin , Ta-Cheng Lien , Hsin-Chang Lee , Anthony Yen , Chia-Jen Chen
IPC分类号： G03F1/48
摘要： A photomask includes a low thermal expansion material (LTEM) substrate, a patterned opaque layer over the LTEM substrate, and a patterned capping layer over the opaque layer. The patterned capping layer includes a transition metal material for suppressing haze growth, such as metal oxide, metal nitride, or metal oxynitride. The material in the capping layer reacts with a hydrogenic compound from a lithography environment to for an atomic level hydrogen passivation layer. The passivation layer has superior ability to suppress photo-induced haze defect growth on the photomask surface, to improve production cycle time and reduce the production cost.
摘要翻译： 光掩模包括低热膨胀材料（LTEM）衬底，在LTEM衬底上的图案化不透明层，以及在不透明层上的图案化覆盖层。 图案化覆盖层包括用于抑制雾度生长的过渡金属材料，例如金属氧化物，金属氮化物或金属氮氧化物。 覆盖层中的材料与来自光刻环境的氢化合物与原子级氢钝化层反应。 钝化层在光掩模表面上具有优异的抑制光致霾缺陷生长的能力，提高生产周期时间，降低生产成本。
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公开(公告)号：US08916482B2
公开(公告)日：2014-12-23
申请号：US13437075
申请日：2012-04-02
申请人： Hsin-Chang Lee , Yun-Yue Lin , Hung-Chang Hsieh , Chia-Jen Chen , Yih-Chen Su , Ta-Cheng Lien , Anthony Yen
发明人： Hsin-Chang Lee , Yun-Yue Lin , Hung-Chang Hsieh , Chia-Jen Chen , Yih-Chen Su , Ta-Cheng Lien , Anthony Yen
IPC分类号： H01L21/31
CPC分类号： G03F1/76
摘要： A method of making a lithography mask with a stress-relief treatment is disclosed. The method includes providing a substrate and depositing an opaque layer on the substrate. The opaque layer is patterned to form a patterned mask. A stress-relief treatment is applied to the patterned mask by using an radiation exposure.
摘要翻译： 公开了一种制造具有应力消除处理的光刻掩模的方法。 该方法包括提供衬底并在衬底上沉积不透明层。 将不透明层图案化以形成图案化掩模。 通过使用辐射照射对图案化掩模施加应力消除处理。
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公开(公告)号：US20140038088A1
公开(公告)日：2014-02-06
申请号：US13564334
申请日：2012-08-01
申请人： Hsin-Chang Lee , Yun-Yue Lin , Pei-Cheng Hsu , Chia-Jen Chen , Ta-Cheng Lien , Anthony Yen
发明人： Hsin-Chang Lee , Yun-Yue Lin , Pei-Cheng Hsu , Chia-Jen Chen , Ta-Cheng Lien , Anthony Yen
IPC分类号： G03F1/24
摘要： A method of fabricating an extreme ultraviolet (EUV) mask is disclosed. The method includes providing a substrate, forming a reflective multilayer (ML) over the substrate, forming a buffer layer over the reflective ML, forming an absorption layer over the buffer layer and forming a capping layer over the absorption layer. The capping layer and the absorption layer are etched to form the EUV mask.
摘要翻译： 公开了一种制造极紫外（EUV）掩模的方法。 该方法包括提供衬底，在衬底上形成反射多层（ML），在反射ML上形成缓冲层，在缓冲层上形成吸收层，并在吸收层上形成覆盖层。 蚀刻覆盖层和吸收层以形成EUV掩模。
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公开(公告)号：US20130280644A1
公开(公告)日：2013-10-24
申请号：US13451767
申请日：2012-04-20
申请人： Yun-Yue Lin , Ta-Cheng Lien , Hsin-Chang Lee , Anthony Yen , Chia-Jen Chen
发明人： Yun-Yue Lin , Ta-Cheng Lien , Hsin-Chang Lee , Anthony Yen , Chia-Jen Chen
摘要： A photomask includes a low thermal expansion material (LTEM) substrate, a patterned opaque layer over the LTEM substrate, and a patterned capping layer over the opaque layer. The patterned capping layer includes a transition metal material for suppressing haze growth, such as metal oxide, metal nitride, or metal oxynitride. The material in the capping layer reacts with a hydrogenic compound from a lithography environment to for an atomic level hydrogen passivation layer. The passivation layer has superior ability to suppress photo-induced haze defect growth on the photomask surface, to improve production cycle time and reduce the production cost.
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公开(公告)号：US20130260573A1
公开(公告)日：2013-10-03
申请号：US13437075
申请日：2012-04-02
申请人： Hsin-Chang Lee , Yun-Yue Lin , Hung-Chang Hsieh , Chia-Jen Chen , Yih-Chen Su , Ta-Cheng Lien , Anthony Yen
发明人： Hsin-Chang Lee , Yun-Yue Lin , Hung-Chang Hsieh , Chia-Jen Chen , Yih-Chen Su , Ta-Cheng Lien , Anthony Yen
IPC分类号： H01L21/033
CPC分类号： G03F1/76
摘要： A method of making a lithography mask with a stress-relief treatment is disclosed. The method includes providing a substrate and depositing an opaque layer on the substrate. The opaque layer is patterned to form a patterned mask. A stress-relief treatment is applied to the patterned mask by using an radiation exposure.
摘要翻译： 公开了一种制造具有应力消除处理的光刻掩模的方法。 该方法包括提供衬底并在衬底上沉积不透明层。 将不透明层图案化以形成图案化掩模。 通过使用辐射照射对图案化掩模施加应力消除处理。
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8.发明申请Phase Shift Mask for Extreme Ultraviolet Lithography and Method of Fabricating Same 有权用于极紫外光刻的相移掩模及其制造方法公开(公告)号：US20140038086A1
公开(公告)日：2014-02-06
申请号：US13564198
申请日：2012-08-01
申请人： Chih-Tsung Shih , Pei-Cheng Hsu , Shinn-Sheng Yu , Tsiao-Chen Wu , Yen-Cheng Lu , Shu-Hao Chang , Chia-Jen Chen , Hsin-Chang Lee , Anthony Yen
发明人： Chih-Tsung Shih , Pei-Cheng Hsu , Shinn-Sheng Yu , Tsiao-Chen Wu , Yen-Cheng Lu , Shu-Hao Chang , Chia-Jen Chen , Hsin-Chang Lee , Anthony Yen
摘要： A mask and method of fabricating same are disclosed. In an example, a mask includes a substrate, a reflective multilayer coating disposed over the substrate, an Ag2O absorber layer disposed over the reflective multilayer coating, and a tantalum-containing absorber layer disposed over the Ag2O absorber layer. The tantalum-containing absorber layer is disposed over the Ag2O absorber layer outside a mask image region of the mask, such that the mask image region of the mask is free of the tantalum-containing absorber layer. In an example, the tantalum-containing absorber layer is disposed over the Ag2O absorber layer adjacent to the mask image region.
摘要翻译： 公开了一种掩模及其制造方法。 在一个示例中，掩模包括基板，设置在基板上的反射多层涂层，设置在反射多层涂层上的Ag 2 O吸收层，以及设置在Ag 2 O吸收层上的含钽吸收层。 含钽吸收层设置在掩模的掩模图像区域外侧的Ag 2 O吸收体层上，使得掩模的掩模图像区域不含含钽吸收层。 在一个实例中，含钽吸收层设置在与掩模图像区域相邻的Ag 2 O吸收层上。
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公开(公告)号：US20130337370A1
公开(公告)日：2013-12-19
申请号：US13495291
申请日：2012-06-13
申请人： Hsin-Chang Lee , Pei-Cheng Hsu , Chia-Jen Chen , Anthony Yen
发明人： Hsin-Chang Lee , Pei-Cheng Hsu , Chia-Jen Chen , Anthony Yen
摘要： A photomask having a machine-readable identifying mark and suitable for manufacturing integrated circuit devices and a method for forming the photomask and identifying mark are disclosed. An exemplary embodiment includes receiving a design layout corresponding to a pattern to be formed on a photomask blank. A specification of an identifying code is also received along with the photomask blank, which includes a substrate, a reflective layer, and an absorptive layer. A first patterning is performed using the design layout. A second patterning is performed using the specification of the identifying code.
摘要翻译： 公开了一种具有机读识别标记并适于制造集成电路器件的光掩模和用于形成光掩模和识别标记的方法。 示例性实施例包括接收与在光掩模坯件上形成的图案相对应的设计布局。 识别码的规格也与包括基底，反射层和吸收层的光掩模坯料一起被接收。 使用设计布局进行第一图案化。 使用识别码的说明来执行第二图案化。
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10.发明授权公开(公告)号：US08589828B2
公开(公告)日：2013-11-19
申请号：US13398923
申请日：2012-02-17
申请人： Hsin-Chang Lee , Chia-Jen Chen , Lee-Chih Yeh , Anthony Yen
发明人： Hsin-Chang Lee , Chia-Jen Chen , Lee-Chih Yeh , Anthony Yen
CPC分类号： G03F1/00 , G03F1/20 , G03F1/22 , G03F1/36 , G03F1/42 , G03F1/70 , G06F17/5081 , G06F19/00 , G21K5/00
摘要： A method for reducing layer overlay errors by synchronizing the density of mask material in the frame area across the masks in a set is disclosed. An exemplary method includes creating a mask design database corresponding to a mask and containing a die area with one or more dies and a frame area outside the die area. Fiducial features within the frame area are identified, and from the fiducial features, an idle frame area is identified. A reference mask design, which corresponds to a reference mask configured to be aligned with the mask, is used to determine a reference density for the idle frame area. The idle frame area of the mask design database is modified to correspond to the reference density. The modified mask design database is then available for further use including manufacturing the mask.
摘要翻译： 公开了一种通过使一组中的掩模之间的框区域中的掩模材料的密度同步来减少层重叠误差的方法。 一种示例性方法包括创建对应于掩模并且包含具有一个或多个管芯的管芯区域和管芯区域外部的框架区域的掩模设计数据库。 识别帧区域内的基准特征，并从基准特征中识别空闲帧区域。 使用对应于被配置为与掩模对准的参考掩模的参考掩模设计来确定空闲帧区域的参考密度。 修改掩模设计数据库的空闲帧区域以对应于参考密度。 然后，修改的掩模设计数据库可用于进一步使用，包括制造掩模。
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