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31 条记录 (耗时 0.029 秒)

    Method of protecting an interlayer dielectric layer and structure formed thereby
    6.
    发明授权
    Method of protecting an interlayer dielectric layer and structure formed thereby 有权
    保护层间电介质层的方法和由此形成的结构

    公开(公告)号：US09263252B2

    公开(公告)日：2016-02-16

    申请号：US13735949

    申请日：2013-01-07

    申请人： Chun-Wei Chang ,  Yi-An Lin ,  Neng-Kuo Chen ,  Sey-Ping Sun ,  Clement Hsingjen Wann ,  Yu-Lien Huang

    发明人： Chun-Wei Chang ,  Yi-An Lin ,  Neng-Kuo Chen ,  Sey-Ping Sun ,  Clement Hsingjen Wann ,  Yu-Lien Huang

    IPC分类号： H01L29/78 ,  H01L21/336 ,  H01L21/02 ,  H01L29/66

    CPC分类号： H01L21/022 ,  H01L29/66545

    摘要： This description relates to a method including forming an interlayer dielectric (ILD) layer and a dummy gate structure over a substrate and forming a cavity in a top portion of the ILD layer. The method further includes forming a protective layer to fill the cavity. The method further includes planarizing the protective layer. A top surface of the planarized protective layer is level with a top surface of the dummy gate structure. This description also relates to a semiconductor device including first and second gate structures and an ILD layer formed on a substrate. The semiconductor device further includes a protective layer formed on the ILD layer, the protective layer having a different etch selectivity than the ILD layer, where a top surface of the protective layer is level with the top surfaces of the first and second gate structures.

    摘要翻译： 该描述涉及包括在衬底上形成层间电介质（ILD）层和虚拟栅极结构并在ILD层的顶部形成腔的方法。 该方法还包括形成保护层以填充空腔。 该方法还包括平坦化保护层。 平坦化保护层的顶表面与虚拟栅结构的顶表面平齐。 该描述还涉及包括第一和第二栅极结构以及形成在衬底上的ILD层的半导体器件。 半导体器件还包括形成在ILD层上的保护层，保护层具有与ILD层不同的蚀刻选择性，其中保护层的顶表面与第一和第二栅极结构的顶表面平齐。

    Method to Form a CMOS Image Sensor
    7.
    发明申请
    Method to Form a CMOS Image Sensor 有权
    形成CMOS图像传感器的方法

    公开(公告)号：US20140061738A1

    公开(公告)日：2014-03-06

    申请号：US13602494

    申请日：2012-09-04

    申请人： Chung Chien Wang ,  Yeur-Luen Tu ,  Cheng-Ta Wu ,  Jiech-Fun Lu ,  Chun-Wei Chang ,  Wang-Pen Mo ,  Jhy-Jyi Sze ,  Chia-Shiung Tsai

    发明人： Chung Chien Wang ,  Yeur-Luen Tu ,  Cheng-Ta Wu ,  Jiech-Fun Lu ,  Chun-Wei Chang ,  Wang-Pen Mo ,  Jhy-Jyi Sze ,  Chia-Shiung Tsai

    IPC分类号： H01L31/0216

    CPC分类号： H01L21/266 ,  H01L27/14689

    摘要： The present disclosure relates to a method and composition to limit crystalline defects introduced in a semiconductor device during ion implantation. A high-temperature low dosage implant is performed utilizing a tri-layer photoresist which maintains the crystalline structure of the semiconductor device while limiting defect formation within the semiconductor device. The tri-layer photoresist comprises a layer of spin-on carbon deposited onto a substrate, a layer of silicon containing hard-mask formed above the layer of spin-on carbon, and a layer of photoresist formed above the layer of silicon containing hard-mask. A pattern formed in the layer of photoresist is sequentially transferred to the silicon containing hard-mask, then to the spin-on carbon, and defines an area of the substrate to be selectively implanted with ions.

    摘要翻译： 本发明涉及在离子注入期间限制在半导体器件中引入的结晶缺陷的方法和组合物。 使用保持半导体器件的晶体结构同时限制半导体器件内的缺陷形成的三层光致抗蚀剂进行高温低剂量注入。 三层光致抗蚀剂包括沉积在基底上的旋涂碳层，在旋涂碳层上方形成的含硅的硬掩模层，以及形成在含硅硬质层的硅层之上的光致抗蚀剂层， 面具。 形成在光致抗蚀剂层上的图案被顺序地转移到含硅的硬掩模，然后转移到旋涂碳上，并且限定要选择性地注入离子的衬底区域。

    ELECTRONIC DEVICE
    8.
    发明申请
    ELECTRONIC DEVICE 审中-公开
    电子设备

    公开(公告)号：US20130027877A1

    公开(公告)日：2013-01-31

    申请号：US13553831

    申请日：2012-07-20

    申请人： Ching-Fu Yang ,  Hui-Lian Chang ,  Ming-Wang Lin ,  Chun-Wei Chang

    发明人： Ching-Fu Yang ,  Hui-Lian Chang ,  Ming-Wang Lin ,  Chun-Wei Chang

    IPC分类号： H05K7/20

    CPC分类号： G06F1/203

    摘要： An electronic device including a main body, a rotating base, a motherboard and a driving module is provided. The rotating base has a first vent. The rotating base is pivoted to the main body and suitable for being rotated between an operating position and a retracting position. When the rotating base is located at the operating position, the first vent is exposed from the main body, and when the rotating base is located at the retracting position, the first vent is retracted in the main body. The driving module includes a controlling element and a first locking element. The controlling element is disposed on the main body and suitable for moving between an enable position and a disable position. The first locking element is connected to the controlling element, and the controlling element drives the first locking element to position the rotating base.

    摘要翻译： 提供一种包括主体，旋转底座，母板和驱动模块的电子设备。 旋转底座具有第一通气口。 旋转底座枢转到主体并且适于在操作位置和缩回位置之间旋转。 当旋转底座位于操作位置时，第一排气孔从主体露出，当旋转底座位于缩回位置时，第一排气口缩回主体。 驱动模块包括控制元件和第一锁定元件。 控制元件设置在主体上并且适于在使能位置和禁用位置之间移动。 第一锁定元件连接到控制元件，并且控制元件驱动第一锁定元件以定位旋转底座。

    Modular side-by-side vise structure
    10.
    发明授权
    Modular side-by-side vise structure 有权

    公开(公告)号：US10919128B2

    公开(公告)日：2021-02-16

    申请号：US16192771

    申请日：2018-11-15

    申请人： Chun-Wei Chang

    发明人： Chun-Wei Chang

    IPC分类号： B25B1/02 ,  B25B1/24

    摘要： A modular side-by-side vise structure including a base, a fixture block group located on the base, and a side clamping piece group; the side clamping piece has an upper part and a lower part, and a bolt is screwed in the upper part to prop the lower part, so that the stopper and movable fixture block cling to the base tightly; or the side grooves on both sides of the stopper and movable fixture block are provided with bolt holes, and the inner wall of side clamping piece is provided with a punch hole, the bolt is screwed in the bolt hole through the punch hole, so that the stopper and movable fixture block cling to the base tightly. Therefore, it is unnecessary to hold up the side clamping piece with a hand while tightening or loosening the bolt, favorable for the technician to implement quick assembly or disassembly.