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    Method to Form a CMOS Image Sensor
    1.
    发明申请
    Method to Form a CMOS Image Sensor 有权
    形成CMOS图像传感器的方法

    公开(公告)号：US20140061738A1

    公开(公告)日：2014-03-06

    申请号：US13602494

    申请日：2012-09-04

    申请人： Chung Chien Wang ,  Yeur-Luen Tu ,  Cheng-Ta Wu ,  Jiech-Fun Lu ,  Chun-Wei Chang ,  Wang-Pen Mo ,  Jhy-Jyi Sze ,  Chia-Shiung Tsai

    发明人： Chung Chien Wang ,  Yeur-Luen Tu ,  Cheng-Ta Wu ,  Jiech-Fun Lu ,  Chun-Wei Chang ,  Wang-Pen Mo ,  Jhy-Jyi Sze ,  Chia-Shiung Tsai

    IPC分类号： H01L31/0216

    CPC分类号： H01L21/266 ,  H01L27/14689

    摘要： The present disclosure relates to a method and composition to limit crystalline defects introduced in a semiconductor device during ion implantation. A high-temperature low dosage implant is performed utilizing a tri-layer photoresist which maintains the crystalline structure of the semiconductor device while limiting defect formation within the semiconductor device. The tri-layer photoresist comprises a layer of spin-on carbon deposited onto a substrate, a layer of silicon containing hard-mask formed above the layer of spin-on carbon, and a layer of photoresist formed above the layer of silicon containing hard-mask. A pattern formed in the layer of photoresist is sequentially transferred to the silicon containing hard-mask, then to the spin-on carbon, and defines an area of the substrate to be selectively implanted with ions.

    摘要翻译： 本发明涉及在离子注入期间限制在半导体器件中引入的结晶缺陷的方法和组合物。 使用保持半导体器件的晶体结构同时限制半导体器件内的缺陷形成的三层光致抗蚀剂进行高温低剂量注入。 三层光致抗蚀剂包括沉积在基底上的旋涂碳层，在旋涂碳层上方形成的含硅的硬掩模层，以及形成在含硅硬质层的硅层之上的光致抗蚀剂层， 面具。 形成在光致抗蚀剂层上的图案被顺序地转移到含硅的硬掩模，然后转移到旋涂碳上，并且限定要选择性地注入离子的衬底区域。

    Method to form a CMOS image sensor
    2.
    发明授权
    Method to form a CMOS image sensor 有权
    形成CMOS图像传感器的方法

    公开(公告)号：US08759225B2

    公开(公告)日：2014-06-24

    申请号：US13602494

    申请日：2012-09-04

    申请人： Chung Chien Wang ,  Yeur-Luen Tu ,  Cheng-Ta Wu ,  Jiech-Fun Lu ,  Chun-Wei Chang ,  Wang-Pen Mo ,  Jhy-Jyi Sze ,  Chia-Shiung Tsai

    发明人： Chung Chien Wang ,  Yeur-Luen Tu ,  Cheng-Ta Wu ,  Jiech-Fun Lu ,  Chun-Wei Chang ,  Wang-Pen Mo ,  Jhy-Jyi Sze ,  Chia-Shiung Tsai

    IPC分类号： H01L21/311

    CPC分类号： H01L21/266 ,  H01L27/14689

    摘要： The present disclosure relates to a method and composition to limit crystalline defects introduced in a semiconductor device during ion implantation. A high-temperature low dosage implant is performed utilizing a tri-layer photoresist which maintains the crystalline structure of the semiconductor device while limiting defect formation within the semiconductor device. The tri-layer photoresist comprises a layer of spin-on carbon deposited onto a substrate, a layer of silicon containing hard-mask formed above the layer of spin-on carbon, and a layer of photoresist formed above the layer of silicon containing hard-mask. A pattern formed in the layer of photoresist is sequentially transferred to the silicon containing hard-mask, then to the spin-on carbon, and defines an area of the substrate to be selectively implanted with ions.

    摘要翻译： 本发明涉及在离子注入期间限制在半导体器件中引入的结晶缺陷的方法和组合物。 使用保持半导体器件的晶体结构同时限制半导体器件内的缺陷形成的三层光致抗蚀剂进行高温低剂量注入。 三层光致抗蚀剂包括沉积在基底上的旋涂碳层，在旋涂碳层上方形成的含硅的硬掩模层，以及形成在含硅硬质层的硅层之上的光致抗蚀剂层， 面具。 形成在光致抗蚀剂层上的图案被顺序地转移到含硅的硬掩模，然后转移到旋涂碳上，并且限定要选择性地注入离子的衬底区域。

    Method and apparatus for reducing stripe patterns
    3.
    发明授权
    Method and apparatus for reducing stripe patterns 有权
    减少条纹图案的方法和装置

    公开(公告)号：US09099389B2

    公开(公告)日：2015-08-04

    申请号：US13371303

    申请日：2012-02-10

    申请人： Chung Chien Wang ,  Yeur-Luen Tu ,  Cheng-Ta Wu ,  Chia-Shiung Tsai

    发明人： Chung Chien Wang ,  Yeur-Luen Tu ,  Cheng-Ta Wu ,  Chia-Shiung Tsai

    IPC分类号： H01L21/268 ,  H01L27/146

    CPC分类号： H01L21/268 ,  G01B11/14 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14689

    摘要： A method for reducing stripe patterns comprising receiving scattered light signals from a backside surface of a laser annealed backside illuminated image sensor wafer, generating a backside surface image based upon the scattered light signals, determining a distance between an edge of a sensor array of the laser anneal backside illuminated image sensor wafer and an adjacent boundary of a laser beam and re-calibrating the laser beam if the distance is less than a predetermined value.

    摘要翻译： 一种用于减少条纹图案的方法，包括从激光退火背面照射图像传感器晶片的背面接收散射光信号，基于散射光信号产生背面图像，确定激光器的传感器阵列的边缘之间的距离 退火背面照射的图像传感器晶片和激光束的相邻边界，并且如果距离小于预定值则重新校准激光束。

    Method and Apparatus for Reducing Stripe Patterns
    4.
    发明申请
    Method and Apparatus for Reducing Stripe Patterns 有权
    减少条纹图案的方法和装置

    公开(公告)号：US20130210188A1

    公开(公告)日：2013-08-15

    申请号：US13371303

    申请日：2012-02-10

    申请人： Chung Chien Wang ,  Yeur-Luen Tu ,  Cheng-Ta Wu ,  Chia-Shiung Tsai

    发明人： Chung Chien Wang ,  Yeur-Luen Tu ,  Cheng-Ta Wu ,  Chia-Shiung Tsai

    IPC分类号： H01L21/268 ,  B23K26/02

    CPC分类号： H01L21/268 ,  G01B11/14 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14689

    摘要： A method for reducing stripe patterns comprising receiving scattered light signals from a backside surface of a laser annealed backside illuminated image sensor wafer, generating a backside surface image based upon the scattered light signals, determining a distance between an edge of a sensor array of the laser anneal backside illuminated image sensor wafer and an adjacent boundary of a laser beam and re-calibrating the laser beam if the distance is less than a predetermined value.

    摘要翻译： 一种用于减少条纹图案的方法，包括从激光退火背面照射图像传感器晶片的背面接收散射光信号，基于散射光信号产生背面图像，确定激光器的传感器阵列的边缘之间的距离 退火背面照射的图像传感器晶片和激光束的相邻边界，并且如果距离小于预定值则重新校准激光束。

    Method to avoid fixed pattern noise within backside illuminated (BSI) complementary metal-oxide-semiconductor (CMOS) sensor array
    8.
    发明授权
    Method to avoid fixed pattern noise within backside illuminated (BSI) complementary metal-oxide-semiconductor (CMOS) sensor array 有权
    在背面照明（BSI）互补金属氧化物半导体（CMOS）传感器阵列中避免固定模式噪声的方法

    公开(公告)号：US08735207B2

    公开(公告)日：2014-05-27

    申请号：US13079995

    申请日：2011-04-05

    申请人： Chung Chien Wang ,  Yeur-Luen Tu ,  Chia-Shiung Tsai

    发明人： Chung Chien Wang ,  Yeur-Luen Tu ,  Chia-Shiung Tsai

    IPC分类号： H01L31/18 ,  H01L21/306 ,  H01L27/146

    CPC分类号： H01L27/1464 ,  H01L27/14687 ,  H01L27/14698 ,  Y10T29/41

    摘要： The present disclosure provides one embodiment of a method. The method includes providing a semiconductor substrate having a front side and a backside, wherein the front side of the semiconductor substrate includes a plurality of backside illuminated imaging sensors; bonding a carrier substrate to the semiconductor substrate from the front side; thinning the semiconductor substrate from the backside; performing an ion implantation to the semiconductor substrate from the backside; performing a laser annealing process to the semiconductor substrate from the backside; and thereafter, performing a polishing process to the semiconductor substrate from the backside.

    摘要翻译： 本公开提供了一种方法的实施例。 该方法包括提供具有正面和背面的半导体衬底，其中半导体衬底的前侧包括多个背面照明成像传感器; 从前侧将载体衬底接合到半导体衬底; 从背面稀释半导体衬底; 从背面对半导体衬底进行离子注入; 从背面对半导体衬底进行激光退火处理; 然后从背面对半导体基板进行研磨处理。

    METHOD TO AVOID FIXED PATTERN NOISE WITHIN BACKSIDE ILLUMINATED (BSI) COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR (CMOS) SENSOR ARRAY
    9.
    发明申请
    METHOD TO AVOID FIXED PATTERN NOISE WITHIN BACKSIDE ILLUMINATED (BSI) COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR (CMOS) SENSOR ARRAY 有权
    在背光照明（BSI）补充金属氧化物半导体（CMOS）传感器阵列中避免固定图案噪声的方法

    公开(公告)号：US20120258564A1

    公开(公告)日：2012-10-11

    申请号：US13079995

    申请日：2011-04-05

    申请人： Chung Chien Wang ,  Yeur-Luen Tu ,  Chia-Shiung Tsai

    发明人： Chung Chien Wang ,  Yeur-Luen Tu ,  Chia-Shiung Tsai

    IPC分类号： H01L31/18 ,  H01L21/306 ,  H01L21/00 ,  H01L21/304

    CPC分类号： H01L27/1464 ,  H01L27/14687 ,  H01L27/14698 ,  Y10T29/41

    摘要： The present disclosure provides one embodiment of a method. The method includes providing a semiconductor substrate having a front side and a backside, wherein the front side of the semiconductor substrate includes a plurality of backside illuminated imaging sensors; bonding a carrier substrate to the semiconductor substrate from the front side; thinning the semiconductor substrate from the backside; performing an ion implantation to the semiconductor substrate from the backside; performing a laser annealing process to the semiconductor substrate from the backside; and thereafter, performing a polishing process to the semiconductor substrate from the backside.

    摘要翻译： 本公开提供了一种方法的实施例。 该方法包括提供具有正面和背面的半导体衬底，其中半导体衬底的前侧包括多个背面照明成像传感器; 从前侧将载体衬底接合到半导体衬底; 从背面稀释半导体衬底; 从背面对半导体衬底进行离子注入; 从背面对半导体衬底进行激光退火处理; 然后从背面对半导体基板进行研磨处理。