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    Atomic layer deposition of tantalum-containing materials using the tantalum precursor TAIMATA
    6.
    发明授权
    Atomic layer deposition of tantalum-containing materials using the tantalum precursor TAIMATA 有权
    使用钽前体TAIMATA的含钽材料的原子层沉积

    公开(公告)号：US07241686B2

    公开(公告)日：2007-07-10

    申请号：US11061039

    申请日：2005-02-19

    申请人： Christophe Marcadal ,  Rongjun Wang ,  Hua Chung ,  Nirmalya Maity

    发明人： Christophe Marcadal ,  Rongjun Wang ,  Hua Chung ,  Nirmalya Maity

    IPC分类号： H01L21/44 ,  H01L21/07

    CPC分类号： H01L29/495 ,  C23C16/18 ,  C23C16/30 ,  C23C16/45553 ,  H01L21/28079 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76864 ,  H01L29/4958 ,  H01L29/517

    摘要： In one example of the invention, a method for depositing a tantalum-containing material on a substrate in a process chamber is provided which includes exposing the substrate to a tantalum precursor that contains TAIMATA and to at least one secondary precursor to deposit a tantalum-containing material during an atomic layer deposition (ALD) process. The ALD process is repeated until the tantalum-containing material is deposited having a predetermined thickness. Usually, the TAIMATA is preheated prior to pulsing the tantalum precursor into the process chamber. Subsequently, a metal layer, such as tungsten or copper, may be deposited on the tantalum-containing material. The tantalum-containing material may contain tantalum, tantalum nitride, tantalum silicon nitride, tantalum boron nitride, tantalum phosphorous nitride, or tantalum oxynitride. The tantalum-containing material may be deposited as a barrier or adhesion layer within a via or as a gate electrode material within a source/drain device.

    摘要翻译： 在本发明的一个实例中，提供了一种用于在处理室中的衬底上沉积含钽材料的方法，其包括将衬底暴露于含有TAIMATA的钽前体和至少一种次级前体以沉积含钽的 材料在原子层沉积（ALD）过程中。 重复ALD工艺，直到含有预定厚度的含钽材料沉积。 通常，在将钽前体脉冲进入处理室之前，将TAIMATA预热。 随后，诸如钨或铜的金属层可以沉积在含钽材料上。 含钽材料可以包含钽，氮化钽，氮化钽，氮化硼，氮化钽或氮氧化钽。 含钽材料可以作为阻挡层或粘合层沉积在源极/漏极器件内的通孔内或栅极电极材料中。

    Ruthenium layer formation for copper film deposition
    8.
    发明申请
    Ruthenium layer formation for copper film deposition 审中-公开
    用于铜膜沉积的钌层形成

    公开(公告)号：US20060153973A1

    公开(公告)日：2006-07-13

    申请号：US11336527

    申请日：2006-01-20

    申请人： Mei Chang ,  Seshadri Ganguli ,  Nirmalya Maity

    发明人： Mei Chang ,  Seshadri Ganguli ,  Nirmalya Maity

    IPC分类号： B05D5/12 ,  C23C28/00 ,  H05K3/00 ,  C23C28/02 ,  B05D3/10

    CPC分类号： H01L21/76874 ,  B82Y30/00 ,  C23C16/18 ,  C23C16/45553 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76871 ,  H01L21/76873

    摘要： In one embodiment, a method for forming a material on a substrate is provided which includes positioning a substrate containing a dielectric material having vias formed therein within a process chamber, forming a barrier layer within the vias and on the dielectric material during a barrier deposition process, forming a ruthenium layer on the barrier layer during a ruthenium deposition process, and filling the vias with a copper material during a copper deposition process. The copper material may be formed by depositing a copper bulk layer over a copper seed layer. The method further provides that the ruthenium layer may be formed by an atomic layer deposition process (ALD) or a physical vapor deposition (PVD) process and the copper material may be formed by an electroless chemical plating process, an electroplating process, a chemical vapor deposition process, an ALD process and/or a PVD process.

    摘要翻译： 在一个实施例中，提供了一种用于在衬底上形成材料的方法，其包括将包含其中形成有通孔的电介质材料的衬底定位在处理室内，在阻挡层沉积过程期间在通孔内和电介质材料上形成阻挡层 在钌沉积工艺期间在阻挡层上形成钌层，并且在铜沉积工艺期间用铜材料填充通孔。 铜材料可以通过在铜籽晶层上沉积铜体积层来形成。 该方法还提供了可以通过原子层沉积工艺（ALD）或物理气相沉积（PVD）工艺形成钌层，并且铜材料可以通过无电化学电镀工艺，电镀工艺，化学蒸气 沉积工艺，ALD工艺和/或PVD工艺。

    ATOMIC LAYER DEPOSITION OF TANTALUM-CONTAINING MATERIALS USING THE TANTALUM PRECURSOR TAIMATA
    9.
    发明申请
    ATOMIC LAYER DEPOSITION OF TANTALUM-CONTAINING MATERIALS USING THE TANTALUM PRECURSOR TAIMATA 有权
    使用TANTALUM PRECURSOR TAIMATA的含钽材料的原子层沉积

    公开(公告)号：US20080032041A1

    公开(公告)日：2008-02-07

    申请号：US11773302

    申请日：2007-07-03

    申请人： Christophe Marcadal ,  Rongjun Wang ,  Hua Chung ,  Nirmalya Maity

    发明人： Christophe Marcadal ,  Rongjun Wang ,  Hua Chung ,  Nirmalya Maity

    IPC分类号： B05D5/12

    CPC分类号： H01L29/495 ,  C23C16/18 ,  C23C16/30 ,  C23C16/45553 ,  H01L21/28079 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76864 ,  H01L29/4958 ,  H01L29/517

    摘要： In one embodiment, a method for forming a tantalum-containing material on a substrate is provided which includes heating a liquid tantalum precursor containing tertiaryamylimido-tris(dimethylamido) tantalum (TAIMATA) to a temperature of at least 30° C. to form a tantalum precursor gas and exposing the substrate to a continuous flow of a carrier gas during an atomic layer deposition process. The method further provides exposing the substrate to the tantalum precursor gas by pulsing the tantalum precursor gas into the carrier gas and adsorbing the tantalum precursor gas on the substrate to form a tantalum precursor layer thereon. Subsequently, the tantalum precursor layer is exposed to at least one secondary element-containing gas by pulsing the secondary element-containing gas into the carrier gas while forming a tantalum barrier layer on the substrate. The tantalum barrier layer may contain tantalum, tantalum nitride, tantalum silicon nitride, tantalum boron nitride, tantalum phosphorous nitride or tantalum oxynitride.

    摘要翻译： 在一个实施方案中，提供了一种用于在基底上形成含钽材料的方法，其包括将含有叔戊酰亚氨基 - 三（二甲基氨基）钽（TAIMATA）的液体钽前体加热至至少30℃的温度以形成钽 前体气体，并在原子层沉积过程中将衬底暴露于载气的连续流动。 该方法进一步通过将钽前体气体脉冲到载气中并将钽前驱体气体吸附在基底上以在其上形成钽前体层而使衬底暴露于钽前体气体。 随后，通过在衬底上形成钽阻挡层，将含二次元素的气体脉冲送入载气中，使钽前体层暴露于至少一个含二元素气体。 钽阻挡层可以包含钽，氮化钽，氮化钽，氮化硼，氮化钽或氮氧化钽。

    Atomic layer deposition of tantalum-containing materials using the tantalum precursor TAIMATA
    10.
    发明授权
    Atomic layer deposition of tantalum-containing materials using the tantalum precursor TAIMATA 失效
    使用钽前体TAIMATA的含钽材料的原子层沉积

    公开(公告)号：US07691742B2

    公开(公告)日：2010-04-06

    申请号：US12365310

    申请日：2009-02-04

    申请人： Christophe Marcadal ,  Rongjun Wang ,  Hua Chung ,  Nirmalya Maity

    发明人： Christophe Marcadal ,  Rongjun Wang ,  Hua Chung ,  Nirmalya Maity

    IPC分类号： H01L21/44 ,  H01L21/285

    CPC分类号： H01L29/495 ,  C23C16/18 ,  C23C16/30 ,  C23C16/45553 ,  H01L21/28079 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76864 ,  H01L29/4958 ,  H01L29/517

    摘要： In one embodiment, a method for forming a tantalum-containing material on a substrate is provided which includes heating a liquid tantalum precursor containing tertiaryamylimido-tris(dimethylamido) tantalum (TAIMATA) to a temperature of at least 30° C. to form a tantalum precursor gas and exposing the substrate to a continuous flow of a carrier gas during an atomic layer deposition process. The method further provides exposing the substrate to the tantalum precursor gas by pulsing the tantalum precursor gas into the carrier gas and adsorbing the tantalum precursor gas on the substrate to form a tantalum precursor layer thereon. Subsequently, the tantalum precursor layer is exposed to at least one secondary element-containing gas by pulsing the secondary element-containing gas into the carrier gas while forming a tantalum barrier layer on the substrate. The tantalum barrier layer may contain tantalum, tantalum nitride, tantalum silicon nitride, tantalum boron nitride, tantalum phosphorous nitride or tantalum oxynitride.

    摘要翻译： 在一个实施方案中，提供了一种用于在基底上形成含钽材料的方法，其包括将含有叔戊酰亚氨基 - 三（二甲基氨基）钽（TAIMATA）的液体钽前体加热至至少30℃的温度以形成钽 前体气体，并在原子层沉积过程中将衬底暴露于载气的连续流动。 该方法进一步通过将钽前体气体脉冲到载气中并将钽前驱体气体吸附在基底上以在其上形成钽前体层而使衬底暴露于钽前体气体。 随后，通过在衬底上形成钽阻挡层，将含二次元素的气体脉冲送入载气中，使钽前体层暴露于至少一个含二元素气体。 钽阻挡层可以包含钽，氮化钽，氮化钽，氮化硼，氮化钽或氮氧化钽。