公开(公告)号：US10276738B2

公开(公告)日：2019-04-30

申请号：US13522901

申请日：2011-01-26

申请人： Pierre Mur ,  Hubert Moriceau ,  Pierre-Jean Ribeyron

发明人： Pierre Mur ,  Hubert Moriceau ,  Pierre-Jean Ribeyron

IPC分类号： H01L31/18 ,  H01L31/0745 ,  H01L31/0747

摘要： A heterojunction photovoltaic cell includes at least one crystalline silicon oxide film directly placed onto one of the front or rear faces of a crystalline silicon substrate, between said substrate and a layer of amorphous or microcrystalline silicon. The thin film is intended to enable the passivation of said face of the substrate. The thin film is more particularly obtained by radically oxidizing a surface portion of the substrate, before depositing the layer of amorphous silicon. Moreover, a thin layer of intrinsic or microdoped amorphous silicon can be placed between said think film and the layer of amorphous or microcrystalline silicon.

公开(公告)号：US20050215071A1

公开(公告)日：2005-09-29

申请号：US11090426

申请日：2005-03-25

申请人： Hubert Moriceau ,  Pierre Mur

发明人： Hubert Moriceau ,  Pierre Mur

IPC分类号： H01L21/20 ,  H01L21/316 ,  H01L21/762 ,  H01L21/31

CPC分类号： H01L21/31658 ,  H01L21/02164 ,  H01L21/02236 ,  H01L21/02255 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02664

摘要： Method of preparing a silicon dioxide layer by high-temperature oxidation on a substrate of formula Si1-xGex in which x is greater than 0 and less than or equal to 1, the said method comprising the following successive steps: a) at least one additional layer of thickness hy and of overall formula Si1-yGey, in which y is greater than 0 and less than x, is deposited on the said substrate of formula Si1-xGex; and b) the high-temperature oxidation of the said additional layer of overall formula Si1-yGey is carried out, whereby the said additional layer is completely or partly converted into a layer of silicon oxide SiO2. Method of preparing an optical or electronic component, comprising at least one step for preparing an SiO2 layer using the method described above.

摘要翻译： 通过高分子氧化制备二氧化硅层的方法，其中x x大于0且小于或等于0的式Si 1-x N x X x 如图1所示，所述方法包括以下连续步骤：a）至少一个附加层厚度h Y y和整体式Si 1-y Ge y / SUB>，其中y大于0且小于x，沉积在所述式Si 1-x Ge x x的衬底上; 和b）进行总体式为Si 1-y Ge y的所述附加层的高温氧化，由此所述附加层完全或部分转化 进入一层氧化硅SiO 2。 制备光学或电子部件的方法，包括使用上述方法制备SiO 2层的至少一个步骤。

公开(公告)号：US20120291861A1

公开(公告)日：2012-11-22

申请号：US13522901

申请日：2011-01-26

申请人： Pierre Mur ,  Hubert Moriceau ,  Pierre-Jean Ribeyron

发明人： Pierre Mur ,  Hubert Moriceau ,  Pierre-Jean Ribeyron

IPC分类号： H01L31/077 ,  H01L31/0352 ,  H01L31/18 ,  H01L31/075

CPC分类号： H01L31/0745 ,  H01L31/0747 ,  H01L31/1868 ,  Y02E10/50 ,  Y02P70/521

摘要： A heterojunction photovoltaic cell includes at least one crystalline silicon oxide film directly placed onto one of the front or rear faces of a crystalline silicon substrate, between said substrate and a layer of amorphous or microcrystalline silicon. The thin film is intended to enable the passivation of said face of the substrate. The thin film is more particularly obtained by radically oxidizing a surface portion of the substrate, before depositing the layer of amorphous silicon. Moreover, a thin layer of intrinsic or microdoped amorphous silicon can be placed between said think film and the layer of amorphous or microcrystalline silicon.

摘要翻译： 异质结光伏电池包括直接放置在晶体硅衬底的前表面或后表面之一上的至少一个晶体氧化硅膜，位于所述衬底和非晶或微晶硅层之间。 薄膜旨在使得能够钝化基底的所述面。 在沉积非晶硅层之前，更特别地通过对衬底的表面部分进行自由基氧化来获得薄膜。 此外，可以在所述思维膜和非晶或微晶硅层之间放置本征或微掺杂非晶硅的薄层。

公开(公告)号：US08877539B2

公开(公告)日：2014-11-04

申请号：US13522829

申请日：2011-01-26

申请人： Hubert Moriceau ,  Pierre Mur ,  Pierre-Jean Ribeyron

发明人： Hubert Moriceau ,  Pierre Mur ,  Pierre-Jean Ribeyron

IPC分类号： H01L31/18 ,  H01L31/20 ,  H01L21/306 ,  H01L31/0236 ,  H01L31/075

CPC分类号： H01L21/30604 ,  H01L31/02363 ,  H01L31/075 ,  H01L31/18 ,  H01L31/202 ,  Y02E10/548 ,  Y02P70/521

摘要： A method for producing of at least one photovoltaic cell includes successively the anisotropic etching of a surface of a crystalline silicon substrate and the isotropic etching treatment of said surface. The isotropic etching treatment includes at least two successive operations respectively consisting in forming a silicon oxide thin film with a controlled average thickness, ranging between 10 nm and 500 nm and in removing said thin film thus-formed. The operation consisting in forming a silicon oxide thin film on the face of the substrate is carried out by a thermally activated dry oxidation. Such a method makes it possible to improve the surface quality of the surface of the substrate once said surface is etched in an anisotropic way.

摘要翻译： 至少一个光伏电池的制造方法包括：连续地对结晶硅衬底的表面进行各向异性蚀刻以及所述表面的各向同性蚀刻处理。 各向同性蚀刻处理包括至少两个连续的操作，分别包括形成具有可控平均厚度的氧化硅薄膜，范围在10nm和500nm之间，并且去除所形成的所述薄膜。 通过热活化干法氧化进行在基板表面上形成氧化硅薄膜的操作。 这种方法使得一旦所述表面以各向异性的方式被蚀刻，就可以提高基板的表面的表面质量。

公开(公告)号：US20120288985A1

公开(公告)日：2012-11-15

申请号：US13522829

申请日：2011-01-26

申请人： Hubert Moriceau ,  Pierre Mur ,  Pierre-Jean Ribeyron

发明人： Hubert Moriceau ,  Pierre Mur ,  Pierre-Jean Ribeyron

IPC分类号： H01L31/0376 ,  H01L31/0368 ,  H01L31/0352

CPC分类号： H01L21/30604 ,  H01L31/02363 ,  H01L31/075 ,  H01L31/18 ,  H01L31/202 ,  Y02E10/548 ,  Y02P70/521

摘要： A method for producing of at least one photovoltaic cell includes successively the anisotropic etching of a surface of a crystalline silicon substrate and the isotropic etching treatment of said surface. The isotropic etching treatment includes at least two successive operations respectively consisting in forming a silicon oxide thin film with a controlled average thickness, ranging between 10 nm and 500 nm and in removing said thin film thus-formed. The operation consisting in forming a silicon oxide thin film on the face of the substrate is carried out by a thermally activated dry oxidation. Such a method makes it possible to improve the surface quality of the surface of the substrate once said surface is etched in an anisotropic way.

摘要翻译： 至少一个光伏电池的制造方法包括：连续地对结晶硅衬底的表面进行各向异性蚀刻以及所述表面的各向同性蚀刻处理。 各向同性蚀刻处理包括至少两个连续的操作，分别包括形成具有可控平均厚度的氧化硅薄膜，范围在10nm和500nm之间，并且去除所形成的所述薄膜。 通过热活化干法氧化进行在基板表面上形成氧化硅薄膜的操作。 这种方法使得一旦所述表面以各向异性的方式被蚀刻，就可以提高基板的表面的表面质量。

公开(公告)号：US07435690B2

公开(公告)日：2008-10-14

申请号：US11090426

申请日：2005-03-25

申请人： Hubert Moriceau ,  Pierre Mur

发明人： Hubert Moriceau ,  Pierre Mur

IPC分类号： H01L21/31

CPC分类号： H01L21/31658 ,  H01L21/02164 ,  H01L21/02236 ,  H01L21/02255 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02664

摘要： Method of preparing a silicon dioxide layer by high-temperature oxidation on a substrate of formula Si1-xGex in which x is greater than 0 and less than or equal to 1, the said method comprising the following successive steps: a) at least one additional layer of thickness hy and of overall formula Si1-yGey, in which y is greater than 0 and less than x, is deposited on the said substrate of formula Si1-xGex; and b) the high-temperature oxidation of the said additional layer of overall formula Si1-yGey is carried out, whereby the said additional layer is completely or partly converted into a layer of silicon oxide SiO2. Method of preparing an optical or electronic component, comprising at least one step for preparing an SiO2 layer using the method described above.

摘要翻译： 通过高分子氧化制备二氧化硅层的方法，其中x x大于0且小于或等于0的式Si 1-x N x X x 如图1所示，所述方法包括以下连续步骤：a）至少一个附加层厚度h Y y和整体式Si 1-y Ge y / SUB>，其中y大于0且小于x，沉积在所述式Si 1-x Ge x x的衬底上; 和b）进行总体式为Si 1-y Ge y的所述附加层的高温氧化，由此所述附加层完全或部分转化 进入一层氧化硅SiO 2。 制备光学或电子部件的方法，包括使用上述方法制备SiO 2层的至少一个步骤。

公开(公告)号：US06724017B2

公开(公告)日：2004-04-20

申请号：US10381212

申请日：2003-03-28

申请人： Marie-Noëlle Semeria ,  Pierre Mur ,  Franck Fournel ,  Hubert Moriceau ,  Hubert Eymery ,  Noël Magnea ,  Thierry Baron ,  François Martin

发明人： Marie-Noëlle Semeria ,  Pierre Mur ,  Franck Fournel ,  Hubert Moriceau ,  Hubert Eymery ,  Noël Magnea ,  Thierry Baron ,  François Martin

IPC分类号： H01L31109

CPC分类号： C23C16/0272 ,  C23C14/024 ,  C30B25/02 ,  C30B29/605

摘要： The invention relates to a device comprising microstructures or nanostructures on a support, characterized in that the support comprises: a) a substrate (1) comprising at least one part composed of a crystalline material, this part having a surface (2) with a stress field or a topology associated with a stress field, the stress field being associated with dislocations, b) an intermediate layer (3) bonded to the surface (2), and having a thickness and/or composition and/or a surface state enabling transmission of said stress field through this layer as far as its free face that supports microstructures or nanostructures (4).

摘要翻译： 本发明涉及一种在载体上包含微结构或纳米结构的装置，其特征在于，所述载体包括：a）基材（1），其包含由结晶材料组成的至少一部分，该部分具有应力的表面（2） 场或与应力场相关联的拓扑，所述应力场与位错相关联，b）结合到所述表面（2）的中间层（3），并且具有能够传输的厚度和/或组成和/或表面状态 的所述应力场通过该层直到其支撑微结构或纳米结构的自由面（4）。

公开(公告)号：US08501026B2

公开(公告)日：2013-08-06

申请号：US13377319

申请日：2010-06-17

申请人： Christophe Constancias ,  Bernard Dalzotto ,  Frank Fournel ,  Philippe Michallon ,  Hubert Moriceau ,  Valerie Pouteau

发明人： Christophe Constancias ,  Bernard Dalzotto ,  Frank Fournel ,  Philippe Michallon ,  Hubert Moriceau ,  Valerie Pouteau

IPC分类号： B44C1/22 ,  H01L21/31 ,  G01N3/08

CPC分类号： B81C1/00158 ,  B81B2201/0264 ,  B81B2201/047 ,  B81C2201/017

摘要： A method for determining a minimum tension compensation stress which will have a membrane of a thickness of less than or equal to one micrometer, secured to a frame, having, in the absence of any external stress, a desired deflection. The membrane can be made as planar as possible in absence of any external stress, and its thickness can be less than or equal to one micrometer.

摘要翻译： 一种用于确定最小张力补偿应力的方法，其将具有小于或等于1微米厚度的膜，固定到框架，在没有任何外部应力的情况下具有期望的偏转。 膜可以在没有任何外部应力的情况下制成尽可能平坦的，并且其厚度可以小于或等于1微米。

公开(公告)号：US08207048B2

公开(公告)日：2012-06-26

申请号：US11612829

申请日：2006-12-19

申请人： Franck Fournel ,  Hubert Moriceau ,  Chrystel Deguet

发明人： Franck Fournel ,  Hubert Moriceau ,  Chrystel Deguet

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L21/2007 ,  B81C1/00031 ,  H01L21/76254

摘要： Method for producing nanostructures comprising: a step of providing a substrate (100) having a buried barrier layer (2) and above said barrier layer (2) a crystalline film (5) provided with a network of crystalline defects and/or stress fields (12) in a crystalline zone (13), one or several steps of attacking the substrate (100), of which a preferential attack either of the crystalline defects and/or the stress fields, or the crystalline zone (13) between the crystalline defects and/or the stress fields, said attack steps enabling the barrier layer (2) to be laid bared locally and protrusions (7) to be formed on a nanometric scale, separated from each other by hollows (7.1) having a base located in the barrier layer, the protrusions leading to nanostructures (7, 8).

摘要翻译： 一种生产纳米结构的方法，包括：提供具有掩埋阻挡层（2）和所述阻挡层（2）上方的衬底（100）的步骤，所述结晶膜（5）具有晶体缺陷和/或应力场网络 12）在结晶区域（13）中，攻击衬底（100）的一个或几个步骤，其中晶体缺陷和/或应力场的优先攻击或晶体缺陷之间的结晶区域（13） 和/或应力场，所述攻击步骤使得阻挡层（2）能够局部放置并且以纳米尺度形成突起（7），所述突起（7）通过具有位于 阻挡层，导致纳米结构的突起（7,8）。

公开(公告)号：US07947564B2

公开(公告)日：2011-05-24

申请号：US11857130

申请日：2007-09-18

申请人： Marek Kostrzewa ,  Hubert Moriceau ,  Marc Zussy

发明人： Marek Kostrzewa ,  Hubert Moriceau ,  Marc Zussy

IPC分类号： H01L21/76

CPC分类号： H01L21/76254 ,  B81C1/00357

摘要： A method of fabricating a mixed microtechnology structure includes providing a provisional substrate including a sacrificial layer on which is formed a mixed layer including at least first patterns of a first material and second patterns of a second material different from the first material, where the first and second patterns reside adjacent the sacrificial layer. The sacrificial layer is removed exposing a mixed surface of the mixed layer, the mixed surface including portions of the first patterns and portions of the second patterns. A continuous is formed covering layer of a third material on the mixed surface by direct bonding.

摘要翻译： 制造混合微技术结构的方法包括提供包括牺牲层的临时衬底，其上形成有至少包括第一材料的第一图案和不同于第一材料的第二材料的第二图案的混合层，其中第一和 第二图案位于牺牲层附近。 消除牺牲层暴露混合层的混合表面，混合表面包括第一图案的部分和第二图案的部分。 连续地通过直接粘合在混合表面上形成第三材料的覆盖层。