利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

17 条记录 (耗时 0.018 秒)

    PHOTOVOLTAIC CELL, INCLUDING A CRYSTALLINE SILICON OXIDE PASSIVATION THIN FILM, AND METHOD FOR PRODUCING SAME
    1.
    发明申请
    PHOTOVOLTAIC CELL, INCLUDING A CRYSTALLINE SILICON OXIDE PASSIVATION THIN FILM, AND METHOD FOR PRODUCING SAME 审中-公开
    包括晶体氧化硅钝化薄膜的光电池及其制造方法

    公开(公告)号：US20120291861A1

    公开(公告)日：2012-11-22

    申请号：US13522901

    申请日：2011-01-26

    申请人： Pierre Mur ,  Hubert Moriceau ,  Pierre-Jean Ribeyron

    发明人： Pierre Mur ,  Hubert Moriceau ,  Pierre-Jean Ribeyron

    IPC分类号： H01L31/077 ,  H01L31/0352 ,  H01L31/18 ,  H01L31/075

    CPC分类号： H01L31/0745 ,  H01L31/0747 ,  H01L31/1868 ,  Y02E10/50 ,  Y02P70/521

    摘要： A heterojunction photovoltaic cell includes at least one crystalline silicon oxide film directly placed onto one of the front or rear faces of a crystalline silicon substrate, between said substrate and a layer of amorphous or microcrystalline silicon. The thin film is intended to enable the passivation of said face of the substrate. The thin film is more particularly obtained by radically oxidizing a surface portion of the substrate, before depositing the layer of amorphous silicon. Moreover, a thin layer of intrinsic or microdoped amorphous silicon can be placed between said think film and the layer of amorphous or microcrystalline silicon.

    摘要翻译： 异质结光伏电池包括直接放置在晶体硅衬底的前表面或后表面之一上的至少一个晶体氧化硅膜，位于所述衬底和非晶或微晶硅层之间。 薄膜旨在使得能够钝化基底的所述面。 在沉积非晶硅层之前，更特别地通过对衬底的表面部分进行自由基氧化来获得薄膜。 此外，可以在所述思维膜和非晶或微晶硅层之间放置本征或微掺杂非晶硅的薄层。

    Method of preparing a silicon dioxide layer by high temperature oxidation on a substrate having, at least on the surface, germanium or a silicon-germanium alloy
    3.
    发明申请
    Method of preparing a silicon dioxide layer by high temperature oxidation on a substrate having, at least on the surface, germanium or a silicon-germanium alloy 有权
    在具有至少表面上的锗或硅 - 锗合金的基板上通过高温氧化制备二氧化硅层的方法

    公开(公告)号：US20050215071A1

    公开(公告)日：2005-09-29

    申请号：US11090426

    申请日：2005-03-25

    申请人： Hubert Moriceau ,  Pierre Mur

    发明人： Hubert Moriceau ,  Pierre Mur

    IPC分类号： H01L21/20 ,  H01L21/316 ,  H01L21/762 ,  H01L21/31

    CPC分类号： H01L21/31658 ,  H01L21/02164 ,  H01L21/02236 ,  H01L21/02255 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02664

    摘要： Method of preparing a silicon dioxide layer by high-temperature oxidation on a substrate of formula Si1-xGex in which x is greater than 0 and less than or equal to 1, the said method comprising the following successive steps: a) at least one additional layer of thickness hy and of overall formula Si1-yGey, in which y is greater than 0 and less than x, is deposited on the said substrate of formula Si1-xGex; and b) the high-temperature oxidation of the said additional layer of overall formula Si1-yGey is carried out, whereby the said additional layer is completely or partly converted into a layer of silicon oxide SiO2. Method of preparing an optical or electronic component, comprising at least one step for preparing an SiO2 layer using the method described above.

    摘要翻译： 通过高分子氧化制备二氧化硅层的方法，其中x x大于0且小于或等于0的式Si 1-x N x X x 如图1所示，所述方法包括以下连续步骤：a）至少一个附加层厚度h Y y和整体式Si 1-y Ge y / SUB>，其中y大于0且小于x，沉积在所述式Si 1-x Ge x x的衬底上; 和b）进行总体式为Si 1-y Ge y的所述附加层的高温氧化，由此所述附加层完全或部分转化 进入一层氧化硅SiO 2。 制备光学或电子部件的方法，包括使用上述方法制备SiO 2层的至少一个步骤。

    METHOD FOR PRODUCING A PHOTOVOLTAIC CELL INCLUDING THE PREPARATION OF THE SURFACE OF A CRYSTALLINE SILICON SUBSTRATE
    4.
    发明申请
    METHOD FOR PRODUCING A PHOTOVOLTAIC CELL INCLUDING THE PREPARATION OF THE SURFACE OF A CRYSTALLINE SILICON SUBSTRATE 有权
    生产光伏电池的方法，包括制备晶体硅衬底的表面

    公开(公告)号：US20120288985A1

    公开(公告)日：2012-11-15

    申请号：US13522829

    申请日：2011-01-26

    申请人： Hubert Moriceau ,  Pierre Mur ,  Pierre-Jean Ribeyron

    发明人： Hubert Moriceau ,  Pierre Mur ,  Pierre-Jean Ribeyron

    IPC分类号： H01L31/0376 ,  H01L31/0368 ,  H01L31/0352

    CPC分类号： H01L21/30604 ,  H01L31/02363 ,  H01L31/075 ,  H01L31/18 ,  H01L31/202 ,  Y02E10/548 ,  Y02P70/521

    摘要： A method for producing of at least one photovoltaic cell includes successively the anisotropic etching of a surface of a crystalline silicon substrate and the isotropic etching treatment of said surface. The isotropic etching treatment includes at least two successive operations respectively consisting in forming a silicon oxide thin film with a controlled average thickness, ranging between 10 nm and 500 nm and in removing said thin film thus-formed. The operation consisting in forming a silicon oxide thin film on the face of the substrate is carried out by a thermally activated dry oxidation. Such a method makes it possible to improve the surface quality of the surface of the substrate once said surface is etched in an anisotropic way.

    摘要翻译： 至少一个光伏电池的制造方法包括：连续地对结晶硅衬底的表面进行各向异性蚀刻以及所述表面的各向同性蚀刻处理。 各向同性蚀刻处理包括至少两个连续的操作，分别包括形成具有可控平均厚度的氧化硅薄膜，范围在10nm和500nm之间，并且去除所形成的所述薄膜。 通过热活化干法氧化进行在基板表面上形成氧化硅薄膜的操作。 这种方法使得一旦所述表面以各向异性的方式被蚀刻，就可以提高基板的表面的表面质量。

    Method of preparing a silicon dioxide layer by high temperature oxidation on a substrate having, at least on the surface, germanium or a silicon-germanium alloy
    5.
    发明授权
    Method of preparing a silicon dioxide layer by high temperature oxidation on a substrate having, at least on the surface, germanium or a silicon-germanium alloy 有权
    在具有至少表面上的锗或硅 - 锗合金的基板上通过高温氧化制备二氧化硅层的方法

    公开(公告)号：US07435690B2

    公开(公告)日：2008-10-14

    申请号：US11090426

    申请日：2005-03-25

    申请人： Hubert Moriceau ,  Pierre Mur

    发明人： Hubert Moriceau ,  Pierre Mur

    IPC分类号： H01L21/31

    CPC分类号： H01L21/31658 ,  H01L21/02164 ,  H01L21/02236 ,  H01L21/02255 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02664

    摘要： Method of preparing a silicon dioxide layer by high-temperature oxidation on a substrate of formula Si1-xGex in which x is greater than 0 and less than or equal to 1, the said method comprising the following successive steps: a) at least one additional layer of thickness hy and of overall formula Si1-yGey, in which y is greater than 0 and less than x, is deposited on the said substrate of formula Si1-xGex; and b) the high-temperature oxidation of the said additional layer of overall formula Si1-yGey is carried out, whereby the said additional layer is completely or partly converted into a layer of silicon oxide SiO2. Method of preparing an optical or electronic component, comprising at least one step for preparing an SiO2 layer using the method described above.

    摘要翻译： 通过高分子氧化制备二氧化硅层的方法，其中x x大于0且小于或等于0的式Si 1-x N x X x 如图1所示，所述方法包括以下连续步骤：a）至少一个附加层厚度h Y y和整体式Si 1-y Ge y / SUB>，其中y大于0且小于x，沉积在所述式Si 1-x Ge x x的衬底上; 和b）进行总体式为Si 1-y Ge y的所述附加层的高温氧化，由此所述附加层完全或部分转化 进入一层氧化硅SiO 2。 制备光学或电子部件的方法，包括使用上述方法制备SiO 2层的至少一个步骤。

    Method for producing a photovoltaic cell including the preparation of the surface of a crystalline silicon substrate
    7.
    发明授权
    Method for producing a photovoltaic cell including the preparation of the surface of a crystalline silicon substrate 有权
    包括制备晶体硅衬底表面的光伏电池的方法

    公开(公告)号：US08877539B2

    公开(公告)日：2014-11-04

    申请号：US13522829

    申请日：2011-01-26

    申请人： Hubert Moriceau ,  Pierre Mur ,  Pierre-Jean Ribeyron

    发明人： Hubert Moriceau ,  Pierre Mur ,  Pierre-Jean Ribeyron

    IPC分类号： H01L31/18 ,  H01L31/20 ,  H01L21/306 ,  H01L31/0236 ,  H01L31/075

    CPC分类号： H01L21/30604 ,  H01L31/02363 ,  H01L31/075 ,  H01L31/18 ,  H01L31/202 ,  Y02E10/548 ,  Y02P70/521

    摘要： A method for producing of at least one photovoltaic cell includes successively the anisotropic etching of a surface of a crystalline silicon substrate and the isotropic etching treatment of said surface. The isotropic etching treatment includes at least two successive operations respectively consisting in forming a silicon oxide thin film with a controlled average thickness, ranging between 10 nm and 500 nm and in removing said thin film thus-formed. The operation consisting in forming a silicon oxide thin film on the face of the substrate is carried out by a thermally activated dry oxidation. Such a method makes it possible to improve the surface quality of the surface of the substrate once said surface is etched in an anisotropic way.

    摘要翻译： 至少一个光伏电池的制造方法包括：连续地对结晶硅衬底的表面进行各向异性蚀刻以及所述表面的各向同性蚀刻处理。 各向同性蚀刻处理包括至少两个连续的操作，分别包括形成具有可控平均厚度的氧化硅薄膜，范围在10nm和500nm之间，并且去除所形成的所述薄膜。 通过热活化干法氧化进行在基板表面上形成氧化硅薄膜的操作。 这种方法使得一旦所述表面以各向异性的方式被蚀刻，就可以提高基板的表面的表面质量。

    Method of manufacturing an optical reflector with semiconductor nanocrystals
    8.
    发明授权
    Method of manufacturing an optical reflector with semiconductor nanocrystals 有权
    制造具有半导体纳米晶体的光学反射体的方法

    公开(公告)号：US08815629B2

    公开(公告)日：2014-08-26

    申请号：US13572121

    申请日：2012-08-10

    申请人： Kavita Surana ,  Mathieu Baudrit ,  Pierre Mur ,  Philippe Thony

    发明人： Kavita Surana ,  Mathieu Baudrit ,  Pierre Mur ,  Philippe Thony

    IPC分类号： H01L21/00 ,  H01L33/00 ,  H01L33/46 ,  H01L33/10

    CPC分类号： H01L33/46 ,  B82Y20/00 ,  G02B1/02 ,  G02B1/116 ,  G02B1/118 ,  H01L33/10 ,  Y02E10/52

    摘要： A method of manufacturing an optical reflector including an alternating stack of at least one first layer of complex refraction index n1 and at least one second layer of complex refraction index n2, in which the first layer includes semiconductor nanocrystals, including the following steps: calculation of the total number of layers of the stack, of the thicknesses of each of the layers and of the values of complex refraction indices n1 and n2 on the basis of the characteristics of a desired spectral reflectivity window of the optical reflector, including the use of an optical transfer matrices calculation method; calculation of deposition and annealing parameters of the layers on the basis of the total number of layers and of the values of previously calculated complex refraction indices n1 and n2; deposition and annealing of the layers in accordance with the previously calculated parameters.

    摘要翻译： 一种制造包括复数折射率n1的至少一个第一层和复数折射率n2的至少一个第二复合折射率n2的交替堆叠的光学反射体的方法，其中第一层包括半导体纳米晶体，包括以下步骤： 基于光反射器的期望的光谱反射率窗口的特性，叠层的层数，层的厚度和复折射率n1和n2的值的总数，包括使用 光传输矩阵计算方法; 基于总层数和先前计算的复折射率n1和n2的值计算层的沉积和退火参数; 根据先前计算的参数进行层的沉积和退火。