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    Phase changeable memory cell array region and method of forming the same
    2.
    发明授权
    Phase changeable memory cell array region and method of forming the same 有权
    相变存储单元阵列区域及其形成方法

    公开(公告)号：US07638787B2

    公开(公告)日：2009-12-29

    申请号：US11581012

    申请日：2006-10-16

    申请人： Hyeong-Geun An ,  Hideki Horii ,  Sang-Yeol Kang

    发明人： Hyeong-Geun An ,  Hideki Horii ,  Sang-Yeol Kang

    IPC分类号： H01L29/02 ,  G11C11/00

    CPC分类号： H01L45/144 ,  H01L27/2436 ,  H01L27/2472 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/1293 ,  H01L45/165 ,  H01L45/1666

    摘要： A phase changeable memory cell array region includes a lower interlayer insulating layer disposed on a semiconductor substrate. The region also includes a plurality of conductive plugs disposed through the lower interlayer insulating layer. The region also includes a phase changeable material pattern operably disposed on the lower interlayer insulating layer, the phase changeable pattern covering at least two of the plurality of conductive plugs, wherein the phase changeable material pattern includes a plurality of first regions in contact with one or more of the plurality of conductive plugs and at least one second region interposed between the plurality of the first regions, wherein the at least one second region has a lower thermal conductivity than the plurality of first regions. The phase changeable memory cell array region also includes an upper interlayer insulating layer covering at least one of the phase changeable material pattern and the lower interlayer insulating layer. The region also includes conductive patterns disposed through the upper interlayer insulating layer and electrically connected to a plurality of predetermined regions of the plurality of first regions.

    摘要翻译： 相变存储单元阵列区域包括设置在半导体衬底上的下层间绝缘层。 该区域还包括穿过下层间绝缘层设置的多个导电插塞。 所述区域还包括可操作地设置在所述下层间绝缘层上的可相变材料图案，所述相变图案覆盖所述多个导电插塞中的至少两个，其中所述相变材料图案包括多个与第 多个导电插塞中的多个和插入在多个第一区域之间的至少一个第二区域，其中至少一个第二区域具有比多个第一区域更低的热导率。 相变存储单元阵列区域还包括覆盖相变材料图案和下层间绝缘层中的至少一个的上层间绝缘层。 该区域还包括通过上层间绝缘层设置并电连接到多个第一区域中的多个预定区域的导电图案。

    Phase-changeable memory device and method of manufacturing the same
    3.
    发明授权
    Phase-changeable memory device and method of manufacturing the same 有权
    相变存储器件及其制造方法

    公开(公告)号：US07563639B2

    公开(公告)日：2009-07-21

    申请号：US11733131

    申请日：2007-04-09

    申请人： Hee-Ju Shin ,  Jong-Chan Shin ,  Soon-Oh Park ,  Hyeong-Geun An ,  Han-Bong Ko

    发明人： Hee-Ju Shin ,  Jong-Chan Shin ,  Soon-Oh Park ,  Hyeong-Geun An ,  Han-Bong Ko

    IPC分类号： H01L21/06

    CPC分类号： H01L45/06 ,  H01L27/2463 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/143 ,  H01L45/144 ,  H01L45/1683

    摘要： In a semiconductor memory device and a method of manufacturing the same, an insulating layer is formed on a substrate having a logic region on which a first pad is provided and a cell region on which a second pad and a lower electrode are subsequently provided. The insulating layer is etched to be a first insulating layer pattern having a first opening exposing the first pad. A first plug is formed in the first opening. The first insulating layer pattern where the first plug is formed is etched to be a second insulating layer pattern having a second opening exposing the lower electrode. A second plug including a phase-changeable material is formed in the second opening. A conductive wire and an upper electrode are formed on the first plug and the second plug, respectively.

    摘要翻译： 在半导体存储器件及其制造方法中，在具有设置有第一焊盘的逻辑区域的衬底上形成绝缘层，并且随后设置有第二焊盘和下电极的单元区域。 绝缘层被蚀刻成具有第一开口的第一绝缘层图案，该第一开口露出第一焊盘。 第一插头形成在第一开口中。 将形成有第一插塞的第一绝缘层图案蚀刻成具有暴露下电极的第二开口的第二绝缘层图案。 包括相变材料的第二插头形成在第二开口中。 导线和上电极分别形成在第一插头和第二插头上。

    PRAMs having a plurality of active regions located vertically in sequence and methods of forming the same
    4.
    发明申请
    PRAMs having a plurality of active regions located vertically in sequence and methods of forming the same 有权
    具有多个有序区域的垂直位置的PRAM及其形成方法

    公开(公告)号：US20060076548A1

    公开(公告)日：2006-04-13

    申请号：US11246863

    申请日：2005-10-07

    申请人： Jae-Hyun Park ,  Hyeong-Geun An ,  Su-Jin Ahn ,  Yoon-Jong Song ,  Hyung-Joo Youn ,  Kyu-Chul Kim

    发明人： Jae-Hyun Park ,  Hyeong-Geun An ,  Su-Jin Ahn ,  Yoon-Jong Song ,  Hyung-Joo Youn ,  Kyu-Chul Kim

    IPC分类号： H01L29/02

    CPC分类号： H01L27/2436 ,  H01L45/06 ,  H01L45/144

    摘要： There are provided PRAMS having a plurality of active regions located vertically in sequence and methods of forming the same. The PRAM and the method provide an approach to rapidly changing phase in a phase change layer pattern with a given design rule. A semiconductor substrate defining at least one reference active region is prepared in a cell array region and a peripheral circuit region. Other semiconductor substrates on a vertical line passing a main surface of the reference active region are located in sequence. The other semiconductor substrates define other active regions, respectively. A lower cell gate pattern is formed on the semiconductor substrate of the reference active region, and upper cell gate patterns are disposed on the other semiconductor substrates of the other active regions, respectively.

    摘要翻译： 提供了具有顺序定位的多个活性区域和其形成方法的PRAMS。 PRAM和该方法提供了用给定设计规则快速改变相变层图案中的相位的方法。 在单元阵列区域和外围电路区域中制备限定至少一个参考有源区的半导体衬底。 在通过参考有源区域的主表面的垂直线上的其它半导体衬底依次定位。 其他半导体衬底分别限定其它有源区。 在参考有源区的半导体衬底上形成下电池栅极图案，并且上电池栅极图案分别设置在其它有源区的其它半导体衬底上。

    Ferroelectric memory device and method of fabricating the same
    5.
    发明授权
    Ferroelectric memory device and method of fabricating the same 有权
    铁电存储器件及其制造方法

    公开(公告)号：US06717197B2

    公开(公告)日：2004-04-06

    申请号：US10245004

    申请日：2002-09-16

    申请人： Hyeong-Geun An

    发明人： Hyeong-Geun An

    IPC分类号： H01L2976

    CPC分类号： H01L27/11502 ,  H01L27/11507 ,  H01L28/55

    摘要： A ferroelectric memory device and a method of fabricating the same are provided. The ferroelectric memory device includes at least two capacitor patterns and a plate line. Each of the capacitor patterns includes a lower electrode, a ferroelectric layer, and an upper electrode that are stacked on a semiconductor substrate. A top of the plate line is covered with an oxygen barrier layer, and a sidewall of the plate line is covered with an oxygen barrier spacer.

    摘要翻译： 提供了一种铁电存储器件及其制造方法。 铁电存储器件包括至少两个电容器图案和板线。 每个电容器图案包括堆叠在半导体衬底上的下电极，铁电层和上电极。 板线的顶部被氧阻挡层覆盖，并且板状线的侧壁被氧隔离隔离物覆盖。

    Nonvolatile memory device using variable resistive element
    6.
    发明授权
    Nonvolatile memory device using variable resistive element 有权
    使用可变电阻元件的非易失性存储器件

    公开(公告)号：US08502184B2

    公开(公告)日：2013-08-06

    申请号：US13103013

    申请日：2011-05-06

    申请人： Hyeong-Geun An ,  Sung-Lae Cho ,  Ik-Soo Kim ,  Dong-Hyun Im ,  Eun-Hee Cho

    发明人： Hyeong-Geun An ,  Sung-Lae Cho ,  Ik-Soo Kim ,  Dong-Hyun Im ,  Eun-Hee Cho

    IPC分类号： H01L29/02

    CPC分类号： H01L45/04 ,  H01L27/2427 ,  H01L27/249 ,  H01L45/1226

    摘要： A nonvolatile memory device and a method of fabricating the same are provided. The nonvolatile memory device includes a conductive pillar that extends from a substrate in a first direction, a variable resistor that surrounds the conductive pillar, a switching material layer that surrounds the variable resistor, a first conductive layer that extends in a second direction, and a first electrode that extends in a third direction and contacts the first conductive layer and the switching material layer. Not one of the first, second, and third directions is parallel to another one of the first, second, and third directions.

    摘要翻译： 提供了一种非易失性存储器件及其制造方法。 非易失性存储器件包括从第一方向从衬底延伸的导电柱，围绕导电柱的可变电阻器，围绕可变电阻器的开关材料层，沿第二方向延伸的第一导电层，以及 第一电极，其在第三方向上延伸并接触第一导电层和开关材料层。 第一，第二和第三方向中没有一个平行于第一，第二和第三方向的另一个。

    PHASE CHANGEABLE MEMORY CELL ARRAY REGION AND METHOD OF FORMING THE SAME
    8.
    发明申请
    PHASE CHANGEABLE MEMORY CELL ARRAY REGION AND METHOD OF FORMING THE SAME 有权
    相变记忆体区域及其形成方法

    公开(公告)号：US20100055831A1

    公开(公告)日：2010-03-04

    申请号：US12617782

    申请日：2009-11-13

    申请人： Hyeong-Geun An ,  Hideki Horii ,  Sang-Yeol Kang

    发明人： Hyeong-Geun An ,  Hideki Horii ,  Sang-Yeol Kang

    IPC分类号： H01L21/06

    CPC分类号： H01L45/144 ,  H01L27/2436 ,  H01L27/2472 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/1293 ,  H01L45/165 ,  H01L45/1666

    摘要： A phase changeable memory cell array region includes a lower interlayer insulating layer disposed on a semiconductor substrate. The region also includes a plurality of conductive plugs disposed through the lower interlayer insulating layer. The region also includes a phase changeable material pattern operably disposed on the lower interlayer insulating layer, the phase changeable pattern covering at least two of the plurality of conductive plugs, wherein the phase changeable material pattern includes a plurality of first regions in contact with one or more of the plurality of conductive plugs and at least one second region interposed between the plurality of the first regions, wherein the at least one second region has a lower thermal conductivity than the plurality of first regions. The phase changeable memory cell array region also includes an upper interlayer insulating layer covering at least one of the phase changeable material pattern and the lower interlayer insulating layer. The region also includes conductive patterns disposed through the upper interlayer insulating layer and electrically connected to a plurality of predetermined regions of the plurality of first regions.

    摘要翻译： 相变存储单元阵列区域包括设置在半导体衬底上的下层间绝缘层。 该区域还包括穿过下层间绝缘层设置的多个导电插塞。 所述区域还包括可操作地设置在所述下层间绝缘层上的可相变材料图案，所述相变图案覆盖所述多个导电插塞中的至少两个，其中所述相变材料图案包括多个与第 多个导电插塞中的多个和插入在多个第一区域之间的至少一个第二区域，其中至少一个第二区域具有比多个第一区域更低的热导率。 相变存储单元阵列区域还包括覆盖相变材料图案和下层间绝缘层中的至少一个的上层间绝缘层。 该区域还包括通过上层间绝缘层设置并电连接到多个第一区域中的多个预定区域的导电图案。