公开(公告)号：US08643037B2

公开(公告)日：2014-02-04

申请号：US13441562

申请日：2012-04-06

申请人： Hyun Wook Shim ,  Suk Ho Yoon ,  Tan Sakong ,  Je Won Kim ,  Ki Sung Kim

发明人： Hyun Wook Shim ,  Suk Ho Yoon ,  Tan Sakong ,  Je Won Kim ,  Ki Sung Kim

IPC分类号： H01L33/32

CPC分类号： H01L33/04 ,  H01L33/32

摘要： There is provided a nitride semiconductor light emitting device including: n-type and p-type nitride semiconductor layers; an active layer disposed between the n-type and p-type nitride semiconductor layers; and an electron injection layer disposed between the n-type nitride semiconductor layer and the active layer. The electron injection layer has a multilayer structure, in which three or more layers having different energy band gaps are stacked, and the multilayer structure is repetitively stacked at least twice. At least one layer among the three or more layers has a reduced energy band gap in individual multilayer structures in a direction toward the active layer, and the layer having the lowest energy band gap has an increased thickness in individual multilayer structures in a direction toward the active layer.

摘要翻译： 提供了一种氮化物半导体发光器件，包括：n型和p型氮化物半导体层; 设置在n型和p型氮化物半导体层之间的有源层; 以及设置在n型氮化物半导体层和有源层之间的电子注入层。 电子注入层具有多层结构，其中堆叠具有不同能带隙的三层或更多层，多层结构重复堆叠至少两次。 三层或更多层中的至少一层在朝向有源层的方向上在单个多层结构中具有减小的能带隙，并且具有最低能带隙的层在朝着该层的方向的单个多层结构中具有增加的厚度 活动层

公开(公告)号：US20140103359A1

公开(公告)日：2014-04-17

申请号：US14125878

申请日：2011-07-28

申请人： Hyun Wook Shim ,  Sang Heon Han ,  Jae Woong Han ,  Dong Chul Shin ,  Je Won Kim ,  Dong Ju Lee

发明人： Hyun Wook Shim ,  Sang Heon Han ,  Jae Woong Han ,  Dong Chul Shin ,  Je Won Kim ,  Dong Ju Lee

IPC分类号： H01L33/32 ,  H01L33/00

CPC分类号： H01L33/32 ,  H01L33/0075 ,  H01L33/025 ,  H01L33/20 ,  H01L33/24

摘要： A semiconductor light emitting device having enhanced luminous efficiency and a manufacturing method thereof are provided. The semiconductor light emitting device includes: an n-type semiconductor layer having at least one pit formed in an upper surface thereof; an active layer formed on the n-type semiconductor layer, a region of the active layer corresponding to the pit having an upper surface bent along the pit; and a p-type semiconductor layer formed on the active layer, a region of the p-type semiconductor layer corresponding to the pit having an upper surface bent along the bent portion of the active layer.

摘要翻译： 提供了一种具有增强的发光效率的半导体发光器件及其制造方法。 半导体发光器件包括：在其上表面中形成有至少一个凹坑的n型半导体层; 形成在所述n型半导体层上的有源层，与所述凹坑对应的所述有源层的沿着所述凹坑弯曲的上表面的区域; 以及形成在有源层上的p型半导体层，p型半导体层对应于具有沿着有源层的弯曲部分弯曲的上表面的凹坑的区域。

公开(公告)号：US07462876B2

公开(公告)日：2008-12-09

申请号：US11584503

申请日：2006-10-23

申请人： Sang Heon Han ,  Bang Won Oh ,  Je Won Kim ,  Hyun Wook Shim ,  Joong Seo Kang ,  Dong Ju Lee

发明人： Sang Heon Han ,  Bang Won Oh ,  Je Won Kim ,  Hyun Wook Shim ,  Joong Seo Kang ,  Dong Ju Lee

IPC分类号： H01L33/00

CPC分类号： H01L33/04 ,  H01L33/32

摘要： Disclosed herein is a nitride semiconductor light emitting device, which is improved in luminance and reliability. The light emitting device, comprises an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer sequentially formed on a substrate, an n-side electrode formed on a portion of an upper surface of the n-type nitride semiconductor layer, and at least one intermediate layer formed between the substrate and the n-type nitride semiconductor layer. The intermediate layer has a multilayer structure of three or more layers having different band-gaps, and is positioned below the n-side electrode.

摘要翻译： 本文公开了一种氮化物半导体发光器件，其亮度和可靠性得到改善。 发光器件包括依次形成在衬底上的n型氮化物半导体层，有源层和p型氮化物半导体层，形成在n型氮化物的上表面的一部分上的n侧电极 半导体层以及形成在基板和n型氮化物半导体层之间的至少一个中间层。 中间层具有三层以上具有不同带隙的层的多层结构，位于n侧电极的下方。

公开(公告)号：US20070145406A1

公开(公告)日：2007-06-28

申请号：US11584503

申请日：2006-10-23

申请人： Sang Heon Han ,  Bang Won Oh ,  Je Won Kim ,  Hyun Wook Shim ,  Joong Seo Kang ,  Dong Ju Lee

发明人： Sang Heon Han ,  Bang Won Oh ,  Je Won Kim ,  Hyun Wook Shim ,  Joong Seo Kang ,  Dong Ju Lee

IPC分类号： H01L33/00

CPC分类号： H01L33/04 ,  H01L33/32

摘要： Disclosed herein is a nitride semiconductor light emitting device, which is improved in luminance and reliability. The light emitting device, comprises an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer sequentially formed on a substrate, an n-side electrode formed on a portion of an upper surface of the n-type nitride semiconductor layer, and at least one intermediate layer formed between the substrate and the n-type nitride semiconductor layer. The intermediate layer has a multilayer structure of three or more layers having different band-gaps, and is positioned below the n-side electrode.

摘要翻译： 本文公开了一种氮化物半导体发光器件，其亮度和可靠性得到改善。 发光器件包括依次形成在衬底上的n型氮化物半导体层，有源层和p型氮化物半导体层，形成在n型氮化物的上表面的一部分上的n侧电极 半导体层以及形成在基板和n型氮化物半导体层之间的至少一个中间层。 中间层具有三层以上具有不同带隙的层的多层结构，位于n侧电极的下方。

公开(公告)号：US20140191192A1

公开(公告)日：2014-07-10

申请号：US14235705

申请日：2011-07-29

申请人： Sang Heon Han ,  Hyun Wook Shim ,  Je Won Kim ,  Chu Young Cho ,  Seong Ju Park ,  Sung Tae Kim ,  Jin Tae Kim ,  Yong Chun Kim ,  Sang Jun Lee

发明人： Sang Heon Han ,  Hyun Wook Shim ,  Je Won Kim ,  Chu Young Cho ,  Seong Ju Park ,  Sung Tae Kim ,  Jin Tae Kim ,  Yong Chun Kim ,  Sang Jun Lee

IPC分类号： H01L33/00 ,  H01L33/06

CPC分类号： H01L33/0025 ,  H01L33/04 ,  H01L33/06 ,  H01L33/32

摘要： There is provided a semiconductor light emitting device having improved light emitting efficiency by increasing an inflow of holes into an active layer while preventing an overflow of electrons. The semiconductor light emitting device includes an n-type semiconductor layer; an active layer formed on the n-type semiconductor layer and including at least one quantum well layer and at least one quantum barrier layer alternately stacked therein; an electron blocking layer formed on the active layer and having at least one multilayer structure including three layers having different energy band gaps stacked therein, a layer adjacent to the active layer among the three layers having an inclined energy band structure; and a p-type semiconductor layer formed on the electron blocking layer.

摘要翻译： 提供了一种半导体发光器件，其通过增加空穴流入有源层同时防止电子溢出而具有改善的发光效率。 半导体发光器件包括n型半导体层; 形成在所述n型半导体层上并且包括至少一个量子阱层和交替层叠的至少一个量子势垒层的有源层; 形成在有源层上的电子阻挡层，具有层叠有不同能带隙的三层以上的至少一层多层结构，三层中与有源层相邻的层具有倾斜的能带结构; 以及形成在电子阻挡层上的p型半导体层。

公开(公告)号：US07301173B2

公开(公告)日：2007-11-27

申请号：US11313967

申请日：2005-12-22

申请人： Hyun Wook Shim ,  Suk Kil Yoon ,  Joong Seo Kang ,  Jong Hak Won

发明人： Hyun Wook Shim ,  Suk Kil Yoon ,  Joong Seo Kang ,  Jong Hak Won

IPC分类号： H01L27/15

CPC分类号： H01L33/14 ,  H01L33/32 ,  H01S5/22 ,  H01S5/305 ,  H01S5/3213 ,  H01S5/3216 ,  H01S5/32341 ,  H01S2301/173

摘要： The present invention provides a group III-nitride light emitting device improved in operating voltage and electrostatic discharge characteristics. The group III-nitride light emitting device comprises a lower n-type clad layer, a current spreading layer, an upper n-type clad layer, an active layer and an p-type clad layer formed in their order on a substrate. The current spreading layer includes a SiC layer.

摘要翻译： 本发明提供了改善工作电压和静电放电特性的III族氮化物发光器件。 III族氮化物发光器件包括在衬底上依次形成的下n型覆盖层，电流扩展层，上n型覆盖层，有源层和p型覆盖层。 电流扩展层包括SiC层。

公开(公告)号：US20060192207A1

公开(公告)日：2006-08-31

申请号：US11247152

申请日：2005-10-12

申请人： Hyun Wook Shim ,  Jong Hak Won ,  Jin Sub Park ,  Joong Seo Kang ,  Hyun Jin Lee

发明人： Hyun Wook Shim ,  Jong Hak Won ,  Jin Sub Park ,  Joong Seo Kang ,  Hyun Jin Lee

IPC分类号： H01L33/00

CPC分类号： H01L33/14 ,  H01L33/04 ,  H01L33/32

摘要： Provided is a nitride semiconductor light emitting device having enhanced output power and resistance to electrostatic discharge. The light emitting device comprises an n-side contact layer formed on a substrate, a current diffusion layer formed on the n-side contact layer, an active layer formed on the current diffusion layer, and a p-type clad layer formed on the active layer. The current diffusion layer is formed by alternately stacking at least one first InAlGaN layer having a higher electron concentration than that of the n-side contact layer and at least one second InAlGaN layer having a lower electron concentration than that of the n-side contact layer.

摘要翻译： 提供了具有增强的输出功率和耐静电放电的氮化物半导体发光器件。 发光器件包括形成在衬底上的n侧接触层，形成在n侧接触层上的电流扩散层，形成在电流扩散层上的有源层和形成在有源层上的p型覆盖层 层。 通过交替堆叠具有比n侧接触层的电子浓度高的至少一个第一InAlGaN层和比n侧接触层的电子浓度低的至少一个第二InAlGaN层形成电流扩散层 。

公开(公告)号：US20120009697A1

公开(公告)日：2012-01-12

申请号：US13173423

申请日：2011-06-30

申请人： Jong Sun Maeng ,  Young Sun Kim ,  Hyun Wook Shim ,  Sung Tae Kim

发明人： Jong Sun Maeng ,  Young Sun Kim ,  Hyun Wook Shim ,  Sung Tae Kim

IPC分类号： H01L33/48 ,  C23C16/458 ,  C23C16/44

CPC分类号： H01L33/0075 ,  C23C16/45502 ,  C23C16/45517 ,  C23C16/45563 ,  C23C16/45572 ,  C23C16/45574 ,  C23C16/45578 ,  C23C16/4558 ,  C23C16/45591 ,  C23C16/458 ,  C23C16/4584 ,  C23C16/4585 ,  H01L33/0066 ,  H01L2933/0016

摘要： A chemical vapor deposition apparatus includes: a reaction chamber including an inner tube having a predetermined volume of an inner space, and an outer tube tightly sealing the inner tube; a wafer holder disposed within the inner tube and on which a plurality of wafers are stacked at predetermined intervals; and a gas supply unit including at least one gas line supplying an external reaction gas to the reaction chamber, and a plurality of spray nozzles communicating with the gas line to spray the reaction gas to the wafers, whereby semiconductor epitaxial thin films are grown on the surfaces of the wafers, wherein the semiconductor epitaxial thin film grown on the surface of the wafer includes a light emitting structure in which a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer are sequentially formed.

摘要翻译： 化学气相沉积装置包括：反应室，包括具有预定体积的内部空间的内管和紧密地密封内管的外管; 设置在所述内管内并且以预定间隔堆叠多个晶片的晶片保持架; 以及气体供给单元，其包括向反应室供给外部反应气体的至少一个气体管线，以及与气体管线连通的多个喷嘴，以将反应气体喷射到晶片，由此在其上生长半导体外延薄膜 晶片的表面，其中在晶片表面上生长的半导体外延薄膜包括其中顺序形成第一导电型半导体层，有源层和第二导电型半导体层的发光结构 。

公开(公告)号：US20080099782A1

公开(公告)日：2008-05-01

申请号：US11905434

申请日：2007-10-01

申请人： Hyun Wook Shim ,  Joong Seo Kang ,  Dong Min Jeon

发明人： Hyun Wook Shim ,  Joong Seo Kang ,  Dong Min Jeon

IPC分类号： H01L33/00

CPC分类号： H01L33/42 ,  H01L33/14 ,  H01L33/32

摘要： Provided is a nitride semiconductor light emitting diode (LED) including a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer formed on a portion of the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the active layer; a p-type contact layer formed on the p-type nitride semiconductor layer and doped with more than 1×102/cm3 of p-type impurities; a transparent oxide electrode formed on the p-type contact layer; a p-electrode formed on the transparent oxide electrode; and an n-electrode formed on the n-type nitride semiconductor layer where the active layer is not formed.

摘要翻译： 提供了包括基板的氮化物半导体发光二极管（LED） 在该基板上形成的n型氮化物半导体层; 形成在所述n型氮化物半导体层的一部分上的有源层; 形成在有源层上的p型氮化物半导体层; p型接触层，其形成在p型氮化物半导体层上并掺杂有大于1×10 2 / cm 3的p型杂质; 形成在p型接触层上的透明氧化物电极; 形成在透明氧化物电极上的p电极; 以及在没有形成有源层的n型氮化物半导体层上形成的n电极。

公开(公告)号：US20090173965A1

公开(公告)日：2009-07-09

申请号：US12249049

申请日：2008-10-10

申请人： Hyun Wook Shim ,  Yong Chun Kim ,  Joong Seo Kang

发明人： Hyun Wook Shim ,  Yong Chun Kim ,  Joong Seo Kang

IPC分类号： H01L33/00

CPC分类号： H01L33/007 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02642 ,  H01L33/20

摘要： There are provided a method of manufacturing a nitride semiconductor light emitting device and a nitride semiconductor light emitting device manufactured using the same. A method of manufacturing a nitride semiconductor light emitting device according to an aspect of the invention includes: forming a mask layer on a substrate; removing a portion of the mask layer to form openings provided as regions where light emitting structures are formed; forming a light emitting structure by sequentially growing a first conductivity type nitride semiconductor layer, an active layer, and a second conductivity type nitride semiconductor layer on the substrate through each of the openings of the mask layer; and forming first and second electrodes to be electrically connected to the first and second conductivity type nitride semiconductor layers, respectively.

摘要翻译： 提供了一种制造氮化物半导体发光器件的方法和使用其制造的氮化物半导体发光器件。 根据本发明的一个方面的制造氮化物半导体发光器件的方法包括：在衬底上形成掩模层; 去除掩模层的一部分以形成设置为形成发光结构的区域的开口; 通过在掩模层的每个开口上顺序地生长第一导电型氮化物半导体层，有源层和第二导电型氮化物半导体层，从而形成发光结构; 以及分别形成与第一和第二导电型氮化物半导体层电连接的第一和第二电极。