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    Nitride semiconductor light emitting device
    1.
    发明授权
    Nitride semiconductor light emitting device 有权
    氮化物半导体发光器件

    公开(公告)号：US08643037B2

    公开(公告)日：2014-02-04

    申请号：US13441562

    申请日：2012-04-06

    申请人： Hyun Wook Shim ,  Suk Ho Yoon ,  Tan Sakong ,  Je Won Kim ,  Ki Sung Kim

    发明人： Hyun Wook Shim ,  Suk Ho Yoon ,  Tan Sakong ,  Je Won Kim ,  Ki Sung Kim

    IPC分类号： H01L33/32

    CPC分类号： H01L33/04 ,  H01L33/32

    摘要： There is provided a nitride semiconductor light emitting device including: n-type and p-type nitride semiconductor layers; an active layer disposed between the n-type and p-type nitride semiconductor layers; and an electron injection layer disposed between the n-type nitride semiconductor layer and the active layer. The electron injection layer has a multilayer structure, in which three or more layers having different energy band gaps are stacked, and the multilayer structure is repetitively stacked at least twice. At least one layer among the three or more layers has a reduced energy band gap in individual multilayer structures in a direction toward the active layer, and the layer having the lowest energy band gap has an increased thickness in individual multilayer structures in a direction toward the active layer.

    摘要翻译： 提供了一种氮化物半导体发光器件，包括：n型和p型氮化物半导体层; 设置在n型和p型氮化物半导体层之间的有源层; 以及设置在n型氮化物半导体层和有源层之间的电子注入层。 电子注入层具有多层结构，其中堆叠具有不同能带隙的三层或更多层，多层结构重复堆叠至少两次。 三层或更多层中的至少一层在朝向有源层的方向上在单个多层结构中具有减小的能带隙，并且具有最低能带隙的层在朝着该层的方向的单个多层结构中具有增加的厚度 活动层

    Method of fabricating nitride-based semiconductor laser diode
    5.
    发明授权
    Method of fabricating nitride-based semiconductor laser diode 失效
    制造氮化物基半导体激光二极管的方法

    公开(公告)号：US07736925B2

    公开(公告)日：2010-06-15

    申请号：US11448800

    申请日：2006-06-08

    申请人： Tan Sakong ,  Youn-joon Sung ,  Ho-sun Paek

    发明人： Tan Sakong ,  Youn-joon Sung ,  Ho-sun Paek

    IPC分类号： H01L21/00

    CPC分类号： H01S5/22 ,  B82Y20/00 ,  H01S5/0213 ,  H01S5/16 ,  H01S5/2201 ,  H01S5/34333 ,  H01S2304/12

    摘要： A method of manufacturing a nitride-based semiconductor laser diode that can minimize optical absorption on a cavity mirror plane and improve the surface roughness of the cavity mirror plane is provided. The method includes the steps of: forming on a (0001) GaN (gallium nitride) substrate having at least two masks spaced apart by a distance equal to a laser cavity length in stripes that extend along the direction; growing an n-GaN layer on the GaN substrate between the masks so that two (1-100) edges of the n-GaN layer are thicker than the remaining regions thereof; sequentially stacking an n-clad layer, an active layer, and a p-clad layer on the n-GaN layer to form an edge-emitting laser cavity structure in which laser light generated in the active layer passes through a region of the n-clad layer aligned laterally with the active layer and is output; and etching a (1-100) plane of the laser cavity structure to form a cavity mirror plane.

    摘要翻译： 提供一种制造氮化物基半导体激光二极管的方法，其可以使腔镜面上的光吸收最小化并且改善腔镜面的表面粗糙度。 该方法包括以下步骤：在（0001）GaN（氮化镓）衬底上形成具有至少两个掩模，该掩模间隔开等于沿着<11-20>方向延伸的条纹的激光器腔长度的距离; 在掩模之间的GaN衬底上生长n-GaN层，使得n-GaN层的两个（1-100）边缘比其余区域厚; 顺序地在n-GaN层上层叠n包覆层，有源层和p覆盖层，以形成边缘发射激光器腔结构，其中在有源层中产生的激光穿过n-GaN层的区域， 包层与活性层横向排列并被输出; 并蚀刻激光腔结构的（1-100）面以形成腔镜面。

    Nitride-based semiconductor light emitting device and methods of manufacturing the same
    7.
    发明授权
    Nitride-based semiconductor light emitting device and methods of manufacturing the same 有权
    氮化物系半导体发光元件及其制造方法

    公开(公告)号：US08304791B2

    公开(公告)日：2012-11-06

    申请号：US11812435

    申请日：2007-06-19

    申请人： Tan Sakong ,  Joong-kon Son ,  Ho-sun Paek ,  Sung-nam Lee

    发明人： Tan Sakong ,  Joong-kon Son ,  Ho-sun Paek ,  Sung-nam Lee

    IPC分类号： H01L33/32

    CPC分类号： H01L33/06 ,  H01L33/32

    摘要： A nitride-based semiconductor light emitting device having a structure capable of improving optical output performance, and methods of manufacturing the same are provided. The active layer may include a first barrier layer formed of InxGa(1-x)N (0.01≦x≦0.05) on a n-type semiconductor layer, a first diffusion barrier layer formed of InyGa(1-y)N (0≦y

    摘要翻译： 提供具有能够提高光输出性能的结构的氮化物系半导体发光元件及其制造方法。 有源层可以包括在n型半导体层上由In x Ga（1-x）N（0.01和n 1; x＆nl; E; 0.05）形成的第一阻挡层，由InyGa（1-y）N（0＆ ; y <0.01），掺杂有包含N（氮）元素和Si（硅）元素中的至少一种的抗缺陷剂，由InzGa（1-z）形成的量子阱层， 在第一扩散阻挡层上的N（0.25和nlE; z＆nlE; 0.35），在量子阱层上由InyGa（1-y）N（0＆lt; 1E; y <0.01）形成的第二扩散阻挡层，并掺杂有抗缺陷 包括N元素和Si元素中的至少一种的第二阻挡层，以及由第二扩散阻挡层上的In x Ga（1-x）N（0.01＆amp; N e; x＆amp; 氮化物系半导体发光元件可以包括依次层叠在基板上的n型半导体层，有源层和p型半导体层。

    NITRIDE SEMICONDUCTOR DEVICE
    8.
    发明申请
    NITRIDE SEMICONDUCTOR DEVICE 有权
    氮化物半导体器件

    公开(公告)号：US20100155699A1

    公开(公告)日：2010-06-24

    申请号：US12580152

    申请日：2009-10-15

    申请人： Tan Sakong ,  Youn Joon Sung ,  Jeong Wook Lee

    发明人： Tan Sakong ,  Youn Joon Sung ,  Jeong Wook Lee

    IPC分类号： H01L29/15

    CPC分类号： H01L33/32 ,  H01L33/02 ,  H01L33/12

    摘要： A nitride semiconductor device includes n-type and p-type nitride semiconductor layers, an active layer, the active layer having a lamination of quantum barrier layers and quantum well layers, a thermal stress control layer disposed between the n-type nitride semiconductor layer and the active layer, and formed of a material having a smaller thermal expansion coefficient than the n-type and p-type nitride semiconductor layers, and a lattice stress control layer disposed between the thermal stress control layer and the active layer, and including a first layer and a second layer.

    摘要翻译： 氮化物半导体器件包括n型和p型氮化物半导体层，有源层，具有量子势垒层和量子阱层叠层的有源层，设置在n型氮化物半导体层和n型氮化物半导体层之间的热应力控制层 所述活性层由具有比n型和p型氮化物半导体层更小的热膨胀系数的材料形成，以及布置在所述热应力控制层和所述有源层之间的晶格应力控制层，并且包括第一 层和第二层。

    Substrate for growing Pendeo epitaxy and method of forming the same
    9.
    发明申请
    Substrate for growing Pendeo epitaxy and method of forming the same 有权
    用于生长Pendeo外延的底物及其形成方法

    公开(公告)号：US20070190755A1

    公开(公告)日：2007-08-16

    申请号：US11650981

    申请日：2007-01-09

    申请人： Ho-sun Paek ,  Tae-hoon Jang ,  Youn-Joon Sung ,  Tan Sakong ,  Min-ho Yang

    发明人： Ho-sun Paek ,  Tae-hoon Jang ,  Youn-Joon Sung ,  Tan Sakong ,  Min-ho Yang

    IPC分类号： H01L21/20

    CPC分类号： C30B7/005 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/0265

    摘要： A Pendeo-epitaxy growth substrate and a method of manufacturing the same are provided. The Pendeo-epitaxy growth substrate includes a substrate, a plurality of pattern areas formed on the substrate in a first direction for Pendeo-epitaxy growth, and at least one solution blocking layer contacting the plurality of pattern areas and formed on the substrate in a second direction, thereby preventing contamination of a semiconductor device due to air gaps and reducing the percentage defects of the semiconductor device during a Pendeo-epitaxy growth process.

    摘要翻译： 提供了一种外延生长衬底及其制造方法。 骨架外延生长衬底包括衬底，在第一方向上形成在衬底上的用于Pendeo-外延生长的多个图案区域，以及至少一个溶液阻挡层，其与多个图案区域接触并在第二个衬底上形成 从而防止由于空气间隙而导致的半导体器件的污染，并且在Pendeo-外延生长工艺期间减少半导体器件的缺陷百分比。

    Semiconductor optoelectronic device and method of fabricating the same
    10.
    发明授权
    Semiconductor optoelectronic device and method of fabricating the same 有权
    半导体光电器件及其制造方法

    公开(公告)号：US07724795B2

    公开(公告)日：2010-05-25

    申请号：US11878495

    申请日：2007-07-25

    申请人： Joong-kon Son ,  Han-youl Ryu ,  Tan Sakong ,  Ho-sun Paek ,  Sung-nam Lee

    发明人： Joong-kon Son ,  Han-youl Ryu ,  Tan Sakong ,  Ho-sun Paek ,  Sung-nam Lee

    IPC分类号： H01S5/00

    CPC分类号： H01L33/02 ,  B82Y20/00 ,  H01L33/06 ,  H01L33/32 ,  H01S5/0014 ,  H01S5/2004 ,  H01S5/2009 ,  H01S5/321 ,  H01S5/3213 ,  H01S5/3403 ,  H01S5/3406 ,  H01S5/34333

    摘要： Provided is a semiconductor opto-electronic device that may comprise an active layer including a quantum well and a barrier layer on a substrate, upper and lower waveguide layers on and underneath the active layer, respectively, and upper and lower clad layers on and underneath the upper and lower waveguide layers, respectively. The semiconductor opto-electronic device may further comprise an upper optical confinement layer (OCL) between the active layer and the upper waveguide layer and having an energy gap smaller than the energy gap of the upper waveguide layer and equal to or larger than the energy gap of the barrier layer, and a lower OCL between the active layer and the lower waveguide layer and having an energy gap smaller than the energy gap of the lower waveguide layer and equal to or smaller than the energy gap of the barrier layer. Also provided is a method of fabricating the semiconductor opto-electronic device.

    摘要翻译： 提供了一种半导体光电器件，其可以包括分别包括量子阱和在衬底上的势垒层，有源层上和下面的上波导层和下层波导层的有源层，以及位于有源层之上和之下的上和下包层 上下波导层。 半导体光电器件还可以包括在有源层和上波导层之间的上部光限制层（OCL），并且具有小于上波导层的能隙的能隙，并且等于或大于能隙 以及有源层和下波导层之间的下部OCL，并且具有小于下部波导层的能隙的能隙，并且等于或小于势垒层的能隙。 还提供了一种制造半导体光电器件的方法。