公开(公告)号：US3672983A

公开(公告)日：1972-06-27

申请号：US3672983D

申请日：1970-01-09

Applicant: IBM

Inventor： WITT DAVID DE ,  DHAKA VIR A ,  OBERAI AVTAR S

IPC: H01L23/522 ,  H01L21/283 ,  H01L21/329 ,  H01L21/331 ,  H01L21/768 ,  H01L23/29 ,  H01L23/485 ,  H01L29/73 ,  H01L7/34

CPC classification number: H01L23/29 ,  H01L23/485 ,  H01L2924/0002 ,  Y10S148/043 ,  Y10S148/049 ,  Y10S148/051 ,  Y10S148/173 ,  H01L2924/00

Abstract: IN A SEMICONDUCTOR DEVICE, THE EMITTER AND BASE METAL CONTACT STRIPES ARE AT DIFFERENT LEVELS AND ARE SEPARATED BY SILICON DIOXIDE AND SILICON NITRIDE. BY USING SUCH A SILICON DIOXIDE SEPARATORY LAYER IN COMBINATION WITH AN INITIAL SILICON NITRIDE COATING OVER THE EMITTER AND BASE REGIONS IN THE SEMICONDUCTOR SUBSTRATE, THE SILICON NITRIDE COATING BEING ETCHED DURING PROCESSING, A HIGH SPEED TRANSISTOR HAVING A VERY SMALL EMITTER-BASE CONTACT SPACING, AND A SMALL EMITTER STRIPE WIDTH IS OBTAINED.

D R A W I N G

公开(公告)号：US3558352A

公开(公告)日：1971-01-26

申请号：US3558352D

申请日：1966-10-27

Applicant: IBM

Inventor： CASTRUCCI PAUL P ,  WITT DAVID DE ,  MUTTER WALTER E ,  DHAKA VIR A

IPC: H01L21/00 ,  H01L21/331 ,  H01L23/485 ,  H01L29/00 ,  H01L1/14 ,  H01L5/02

CPC classification number: H01L23/485 ,  H01L21/00 ,  H01L29/00 ,  H01L29/66303 ,  H01L2924/0002 ,  Y10S438/951 ,  H01L2924/00

Abstract: A SEMICONDUCTIVE DEVICE AND A METHOD FOR FORMING A SEMICONDUCTOR DEVICE WHEREIN THE OHMIC CONTACT IS IN THE ORDER OF MICRONS IN WIDTH. A FIRST METAL IS FORMED IN THE OPENING IN THE PROTECTIVE COATING WHICH ACTS AS THE OHMIC CONTACT TO THE SEMICONDUCTOR DEVICE. A SECOND METAL MAY BE APPLIED ONLY OVER THE FIRST METAL BY ELECTROLESS OR ELECTROPLATING TECHNIQUES TO INCREASE THE CONDUCTIVITY OF THE OHMIC CONTACT. FINALLY, AN EXTERNAL LAND METAL LAYER IS DEPOSITED OVER A RELATIVELY LARGE AREA OF THE PROTECTIVE COATING IN THE AREA OF THE OHMIC CONTACT WITH FINGER-LIKE EXTENSIONS OF THE LAND METAL LAYER CONTACTING THE OHMIC CONTACT BY SHORT OVERLAID AREAS. THE EXTERNAL LAND IS THE ONLY METAL LAYER IN THE PROCESS FORMED WHICH REQUIRES A PHOTOGRAPHIC MASK. THE PROCESS, THEREFORE, IN NOT LIMITED BY PRESENT DAY PHOTOENGRAVING TECHNIQUES.

公开(公告)号：US3458925A

公开(公告)日：1969-08-05

申请号：US3458925D

申请日：1966-01-20

Applicant: IBM

Inventor： NAPIER JOHN ,  SOPHER RAEMAN P ,  TOTTA PAUL A ,  WITT DAVID DE ,  KARAN CLARENCE

IPC: H01L21/00 ,  H01L21/60 ,  H01L23/485 ,  H01R12/55 ,  B01J17/00 ,  B23K31/02

CPC classification number: H01L21/67121 ,  H01L23/485 ,  H01L24/11 ,  H01L2224/0401 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05171 ,  H01L2224/05572 ,  H01L2224/05644 ,  H01L2224/1147 ,  H01L2224/13099 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/12033 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2924/00