公开(公告)号：US3341381A

公开(公告)日：1967-09-12

申请号：US58912366

申请日：1966-10-24

Applicant: TEXAS INSTRUMENTS INC

Inventor： BERGMAN HENRY P ,  STIEGLER JR ROY W

IPC: H01L29/73 ,  C23C8/00 ,  C23C16/40 ,  H01L21/225 ,  H01L21/316 ,  H01L21/331 ,  H01L29/00

CPC classification number: H01L21/31612 ,  C23C8/00 ,  C23C16/402 ,  H01L21/02126 ,  H01L21/02129 ,  H01L21/02263 ,  H01L21/02271 ,  H01L21/2255 ,  H01L29/00 ,  Y10S148/015 ,  Y10S148/037 ,  Y10S148/043 ,  Y10S148/062 ,  Y10S148/079 ,  Y10S148/118 ,  Y10S148/144 ,  Y10S148/151 ,  Y10S148/173

公开(公告)号：US3363760A

公开(公告)日：1968-01-16

申请号：US63866267

申请日：1967-05-15

Applicant: PHILIPS CORP

Inventor： THOMAS KLEIN

IPC: C30B31/06 ,  H01L21/00 ,  H01L21/22 ,  H01L29/00

CPC classification number: H01L21/22 ,  C30B31/06 ,  H01L21/00 ,  H01L29/00 ,  Y10S148/049 ,  Y10S148/062 ,  Y10S148/106 ,  Y10S148/173

公开(公告)号：US3959810A

公开(公告)日：1976-05-25

申请号：US57890

申请日：1970-06-18

Applicant: Takanori Takeda

Inventor： Takanori Takeda

IPC: H01L21/00 ,  H01L21/223 ,  H01L21/316 ,  H01L29/00 ,  H01L29/06 ,  H01L29/08 ,  H01L29/40 ,  H01L29/34

CPC classification number: H01L29/408 ,  H01L21/00 ,  H01L21/02164 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02271 ,  H01L21/223 ,  H01L21/31612 ,  H01L21/31662 ,  H01L29/00 ,  H01L29/0615 ,  H01L29/0821 ,  H01L29/0847 ,  Y10S148/043 ,  Y10S148/051 ,  Y10S148/106 ,  Y10S148/173

Abstract: A method for manufacturing a PNP type planar transistor, diffusing an acceptor impurity in a non-oxidizing atmosphere to form a P type emitter region in one portion of an N type base region with a first silicon oxide film as a selective mask, depositing a second silicon oxide film from vapor phase on the surface of said emitter region, diffusing selectively a donor impurity in another portion of said base region with said first and second silicon oxide films as selective masks thereby to form an N type highly doped region in said base region.

公开(公告)号：US3635772A

公开(公告)日：1972-01-18

申请号：US3635772D

申请日：1969-04-10

Applicant: COMP GENERALE ELECTRICITE

Inventor： PESTIE JEAN-PIERRE ,  BELMAS JEAN

IPC: H01L21/00 ,  H01L23/29 ,  H01L29/00 ,  H01L7/44

CPC classification number: H01L23/291 ,  H01L21/00 ,  H01L29/00 ,  H01L2924/0002 ,  Y10S148/106 ,  Y10S148/145 ,  Y10S148/151 ,  Y10S148/173 ,  H01L2924/00

Abstract: With a view to carrying out successive treatments on the semiconductor component, the insulating layer of the said component is removed during a preliminary litho-engraving operation on the parts to be opened up later. The procedure can be applied to great advantage to plane structure high-frequency components in which the active base is prolonged by a peripheral part having an increased concentration of impurities, on which electrical connection is easier.

Abstract translation: 为了在半导体部件上进行连续的处理，在对要打开的部件的后续的光刻工序中，除去所述部件的绝缘层。 该方法可以极大地有利于平面结构的高频分量，其中活性碱被具有增加的杂质浓度的周边部分延长，其中电连接更容易。

公开(公告)号：US3507716A

公开(公告)日：1970-04-21

申请号：US3507716D

申请日：1967-09-01

Applicant: HITACHI LTD

Inventor： NISHIDA SUMIO ,  MOGI TOSHIZI

IPC: H01L21/225 ,  H01L21/316 ,  H01L7/36 ,  H01L7/44 ,  H01L7/50

CPC classification number: H01L21/2255 ,  H01L21/316 ,  Y10S148/043 ,  Y10S148/173

公开(公告)号：US3497407A

公开(公告)日：1970-02-24

申请号：US3497407D

申请日：1966-12-28

Applicant: IBM

Inventor： ESCH RONALD P ,  PLISKIN WILLIAM A

IPC: C23F1/10 ,  C23F1/14 ,  H01L21/308 ,  H01L21/311 ,  H01L23/29 ,  H01L23/485 ,  H01L7/00

CPC classification number: H01L23/291 ,  H01L21/31111 ,  H01L23/485 ,  H01L2924/0002 ,  Y10S148/043 ,  Y10S148/051 ,  Y10S148/173 ,  H01L2924/00

公开(公告)号：US3759761A

公开(公告)日：1973-09-18

申请号：US3759761D

申请日：1969-10-23

Applicant: HITACHI LTD

Inventor： MORI T ,  HIGUCHI H ,  UEHARA K

IPC: H01L23/29 ,  H01L29/00 ,  C23B5/50 ,  C23C13/04 ,  H01L7/44

CPC classification number: H01L23/29 ,  H01L29/00 ,  H01L2924/0002 ,  Y10S148/03 ,  Y10S148/043 ,  Y10S148/173 ,  H01L2924/00

Abstract: AN IMPROVED METHOD FOR FABRICATING A TRANSISTOR BASED ON THE "WASHED EMITTER METHOD," WHEREIN AN ORIGINAL SILICON DIOXIDE FILM, USED AT A MASK FOR BASE DIFFUSION, IS REMOVED FROM THE SURFACE OF THE SILICON TRANSISTOR BODY AFTER A BASE REGION IS FORMED BY DIFFUSION AND A NEW INSULATION FILM WHICH OPERATIVELY ACTS TO STABILIZE THE SURFACE PROPERTY OF THE TRANSISTOR BODY IS SUBSTITUTED THEREFOR. EMITTER DIFFUSION IS THEN PROVIDED TO THE SURFACE OF THE BASE REGION BY UTILIZING THE NEW INSULATOR FILM AS A MASK FOR THE EMITTER DIFFUSION, AND THEREAFTER THE SURFACE OF THE BODY IS WASHED TO REMOVE THE OXIDE LAYER FORMED ON THE EMITTER REGION DURING THE EMITTER DIFFUSION. AN APERTURE FOR A BASE CONTACT IS THEN FORMED BY PHOTOETCHING A PART OF THE NEW INSULATOR FILM. A COMPLETED TRANSISTOR IS OBTAINED BY PROVIDING METAL CONTRACTS THROUGH THE RESPECTIVE APERTURES TO THE RESPECTIVE EMITTER AND BASE REGIONS.

公开(公告)号：US3672983A

公开(公告)日：1972-06-27

申请号：US3672983D

申请日：1970-01-09

Applicant: IBM

Inventor： WITT DAVID DE ,  DHAKA VIR A ,  OBERAI AVTAR S

IPC: H01L23/522 ,  H01L21/283 ,  H01L21/329 ,  H01L21/331 ,  H01L21/768 ,  H01L23/29 ,  H01L23/485 ,  H01L29/73 ,  H01L7/34

CPC classification number: H01L23/29 ,  H01L23/485 ,  H01L2924/0002 ,  Y10S148/043 ,  Y10S148/049 ,  Y10S148/051 ,  Y10S148/173 ,  H01L2924/00

Abstract: IN A SEMICONDUCTOR DEVICE, THE EMITTER AND BASE METAL CONTACT STRIPES ARE AT DIFFERENT LEVELS AND ARE SEPARATED BY SILICON DIOXIDE AND SILICON NITRIDE. BY USING SUCH A SILICON DIOXIDE SEPARATORY LAYER IN COMBINATION WITH AN INITIAL SILICON NITRIDE COATING OVER THE EMITTER AND BASE REGIONS IN THE SEMICONDUCTOR SUBSTRATE, THE SILICON NITRIDE COATING BEING ETCHED DURING PROCESSING, A HIGH SPEED TRANSISTOR HAVING A VERY SMALL EMITTER-BASE CONTACT SPACING, AND A SMALL EMITTER STRIPE WIDTH IS OBTAINED.

D R A W I N G

公开(公告)号：US3481781A

公开(公告)日：1969-12-02

申请号：US3481781D

申请日：1967-03-17

Applicant: RCA CORP

Inventor： KERN WERNER

IPC: C03C1/00 ,  C23C16/40 ,  C23D5/00 ,  H01L21/316 ,  C23C13/04 ,  C23B5/50

CPC classification number: H01L21/31625 ,  B05D2490/50 ,  C03C1/00 ,  C23C16/401 ,  C23D5/00 ,  H01L21/02129 ,  H01L21/02142 ,  H01L21/02145 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/31604 ,  Y10S148/043 ,  Y10S148/118 ,  Y10S148/173

公开(公告)号：US3365793A

公开(公告)日：1968-01-30

申请号：US34062164

申请日：1964-01-28

Applicant: HUGHES AIRCRAFT CO

Inventor： NECHTOW MARSHALL I

IPC: H01L21/225 ,  H01L21/316 ,  H01L29/00

CPC classification number: H01L21/316 ,  H01L21/2255 ,  H01L29/00 ,  Y10S148/043 ,  Y10S148/051 ,  Y10S148/151 ,  Y10S148/173